CN1367535A - 全耗尽型集电极硅绝缘体双极晶体管 - Google Patents
全耗尽型集电极硅绝缘体双极晶体管 Download PDFInfo
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- CN1367535A CN1367535A CN01137022A CN01137022A CN1367535A CN 1367535 A CN1367535 A CN 1367535A CN 01137022 A CN01137022 A CN 01137022A CN 01137022 A CN01137022 A CN 01137022A CN 1367535 A CN1367535 A CN 1367535A
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- Prior art keywords
- bipolar transistor
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- insulating barrier
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- 239000012212 insulator Substances 0.000 title abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 36
- 229910052710 silicon Inorganic materials 0.000 title description 36
- 239000010703 silicon Substances 0.000 title description 36
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 22
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 12
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 12
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 38
- 229920005591 polysilicon Polymers 0.000 description 35
- 238000000151 deposition Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 13
- 230000009977 dual effect Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24233900P | 2000-10-20 | 2000-10-20 | |
US60/242,339 | 2000-10-20 | ||
US09/757,965 | 2001-01-10 | ||
US09/757,965 US6849871B2 (en) | 2000-10-20 | 2001-01-10 | Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1367535A true CN1367535A (zh) | 2002-09-04 |
CN1205672C CN1205672C (zh) | 2005-06-08 |
Family
ID=26935015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB01137022XA Expired - Lifetime CN1205672C (zh) | 2000-10-20 | 2001-10-19 | 全耗尽型集电极硅绝缘体双极晶体管 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6849871B2 (zh) |
KR (1) | KR100413751B1 (zh) |
CN (1) | CN1205672C (zh) |
SG (1) | SG100757A1 (zh) |
TW (1) | TW538509B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011072527A1 (zh) * | 2009-12-17 | 2011-06-23 | 中国科学院上海微系统与信息技术研究所 | 一种soi纵向双极晶体管及其制作方法 |
CN102412274A (zh) * | 2011-01-13 | 2012-04-11 | 上海华虹Nec电子有限公司 | 锗硅hbt工艺中垂直寄生型pnp器件及制造方法 |
CN102916041A (zh) * | 2012-11-15 | 2013-02-06 | 中国科学院上海微系统与信息技术研究所 | 基于soi的锗硅异质结双极晶体管及其制作方法 |
CN106876271A (zh) * | 2017-02-10 | 2017-06-20 | 江苏能华微电子科技发展有限公司 | 氮化镓功率三极管的制作方法 |
CN113454769A (zh) * | 2018-12-24 | 2021-09-28 | Soitec公司 | 用于数字应用和射频应用的半导体结构和制造这种结构的工艺 |
WO2022121674A1 (en) * | 2020-12-11 | 2022-06-16 | International Business Machines Corporation | Bipolar junction transistor with vertically integrated resistor |
Families Citing this family (112)
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TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
EP1355316B1 (en) * | 2002-04-18 | 2007-02-21 | Innovative Silicon SA | Data storage device and refreshing method for use with such device |
EP1357603A3 (en) * | 2002-04-18 | 2004-01-14 | Innovative Silicon SA | Semiconductor device |
US8513087B2 (en) * | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
US8089129B2 (en) * | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US7939420B2 (en) * | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
US7834421B2 (en) * | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
US7667268B2 (en) * | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US20080197408A1 (en) * | 2002-08-14 | 2008-08-21 | Advanced Analogic Technologies, Inc. | Isolated quasi-vertical DMOS transistor |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US7902630B2 (en) * | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US7956391B2 (en) * | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US20040222485A1 (en) * | 2002-12-17 | 2004-11-11 | Haynie Sheldon D. | Bladed silicon-on-insulator semiconductor devices and method of making |
FR2854494A1 (fr) * | 2003-05-02 | 2004-11-05 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire |
US20040228168A1 (en) * | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US6912150B2 (en) * | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
US7085153B2 (en) * | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
US7335934B2 (en) * | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
US7184298B2 (en) * | 2003-09-24 | 2007-02-27 | Innovative Silicon S.A. | Low power programming technique for a floating body memory transistor, memory cell, and memory array |
KR100586737B1 (ko) | 2003-12-26 | 2006-06-08 | 한국전자통신연구원 | SOI 기판 위에 구현된 NMOS 소자, PMOS 소자및 SiGe BiCMOS 소자 및 그 제조 방법 |
US7372091B2 (en) * | 2004-01-27 | 2008-05-13 | Micron Technology, Inc. | Selective epitaxy vertical integrated circuit components |
US7476939B2 (en) * | 2004-11-04 | 2009-01-13 | Innovative Silicon Isi Sa | Memory cell having an electrically floating body transistor and programming technique therefor |
US7251164B2 (en) * | 2004-11-10 | 2007-07-31 | Innovative Silicon S.A. | Circuitry for and method of improving statistical distribution of integrated circuits |
US7301838B2 (en) * | 2004-12-13 | 2007-11-27 | Innovative Silicon S.A. | Sense amplifier circuitry and architecture to write data into and/or read from memory cells |
US7301803B2 (en) * | 2004-12-22 | 2007-11-27 | Innovative Silicon S.A. | Bipolar reading technique for a memory cell having an electrically floating body transistor |
US7504685B2 (en) | 2005-06-28 | 2009-03-17 | Micron Technology, Inc. | Oxide epitaxial isolation |
US20070023833A1 (en) * | 2005-07-28 | 2007-02-01 | Serguei Okhonin | Method for reading a memory cell having an electrically floating body transistor, and memory cell and array implementing same |
US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
US7355916B2 (en) * | 2005-09-19 | 2008-04-08 | Innovative Silicon S.A. | Method and circuitry to generate a reference current for reading a memory cell, and device implementing same |
KR100752182B1 (ko) * | 2005-10-12 | 2007-08-24 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US20070085140A1 (en) * | 2005-10-19 | 2007-04-19 | Cedric Bassin | One transistor memory cell having strained electrically floating body region, and method of operating same |
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2001
- 2001-01-10 US US09/757,965 patent/US6849871B2/en not_active Expired - Lifetime
- 2001-09-25 SG SG200105829A patent/SG100757A1/en unknown
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- 2001-10-18 KR KR10-2001-0064169A patent/KR100413751B1/ko not_active IP Right Cessation
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WO2011072527A1 (zh) * | 2009-12-17 | 2011-06-23 | 中国科学院上海微系统与信息技术研究所 | 一种soi纵向双极晶体管及其制作方法 |
CN102104063B (zh) * | 2009-12-17 | 2012-10-31 | 中国科学院上海微系统与信息技术研究所 | 一种soi纵向双极晶体管及其制作方法 |
CN102412274A (zh) * | 2011-01-13 | 2012-04-11 | 上海华虹Nec电子有限公司 | 锗硅hbt工艺中垂直寄生型pnp器件及制造方法 |
CN102916041A (zh) * | 2012-11-15 | 2013-02-06 | 中国科学院上海微系统与信息技术研究所 | 基于soi的锗硅异质结双极晶体管及其制作方法 |
CN102916041B (zh) * | 2012-11-15 | 2015-03-25 | 中国科学院上海微系统与信息技术研究所 | 基于soi的锗硅异质结双极晶体管及其制作方法 |
CN106876271A (zh) * | 2017-02-10 | 2017-06-20 | 江苏能华微电子科技发展有限公司 | 氮化镓功率三极管的制作方法 |
CN113454769A (zh) * | 2018-12-24 | 2021-09-28 | Soitec公司 | 用于数字应用和射频应用的半导体结构和制造这种结构的工艺 |
CN113454769B (zh) * | 2018-12-24 | 2024-05-31 | Soitec公司 | 用于数字应用和射频应用的半导体结构和制造这种结构的工艺 |
WO2022121674A1 (en) * | 2020-12-11 | 2022-06-16 | International Business Machines Corporation | Bipolar junction transistor with vertically integrated resistor |
GB2616576A (en) * | 2020-12-11 | 2023-09-13 | Ibm | Bipolar junction transistor with vertically integrated resistor |
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CN1205672C (zh) | 2005-06-08 |
TW538509B (en) | 2003-06-21 |
US20020089038A1 (en) | 2002-07-11 |
US20050087805A1 (en) | 2005-04-28 |
KR100413751B1 (ko) | 2004-01-03 |
KR20020031045A (ko) | 2002-04-26 |
US6949764B2 (en) | 2005-09-27 |
SG100757A1 (en) | 2003-12-26 |
US6849871B2 (en) | 2005-02-01 |
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