CN1365514A - 制造晶体管的方法 - Google Patents
制造晶体管的方法 Download PDFInfo
- Publication number
- CN1365514A CN1365514A CN01800610A CN01800610A CN1365514A CN 1365514 A CN1365514 A CN 1365514A CN 01800610 A CN01800610 A CN 01800610A CN 01800610 A CN01800610 A CN 01800610A CN 1365514 A CN1365514 A CN 1365514A
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- CN
- China
- Prior art keywords
- semiconductor layer
- cem
- paper tinsel
- tft
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 46
- 238000002425 crystallisation Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 14
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 230000008025 crystallization Effects 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000002178 crystalline material Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 8
- 239000011888 foil Substances 0.000 abstract 4
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0006958.3A GB0006958D0 (en) | 2000-03-23 | 2000-03-23 | Method of manufacturing a transistor |
GB0006958.3 | 2000-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1365514A true CN1365514A (zh) | 2002-08-21 |
CN100533664C CN100533664C (zh) | 2009-08-26 |
Family
ID=9888204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018006108A Expired - Fee Related CN100533664C (zh) | 2000-03-23 | 2001-03-13 | 薄膜晶体管及其制造方法、有源矩阵器件及其制造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6566179B2 (zh) |
EP (1) | EP1214736A1 (zh) |
JP (1) | JP2003528460A (zh) |
KR (1) | KR100756971B1 (zh) |
CN (1) | CN100533664C (zh) |
GB (1) | GB0006958D0 (zh) |
WO (1) | WO2001071783A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6770518B2 (en) * | 2001-01-29 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
SG114529A1 (en) * | 2001-02-23 | 2005-09-28 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
EP1326273B1 (en) * | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6933527B2 (en) * | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
JP4011344B2 (ja) * | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
US6847050B2 (en) | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
JP4626796B2 (ja) * | 2002-10-09 | 2011-02-09 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電子機器 |
KR100611224B1 (ko) * | 2003-11-22 | 2006-08-09 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법 |
KR100600874B1 (ko) | 2004-06-09 | 2006-07-14 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조 방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5147826A (en) * | 1990-08-06 | 1992-09-15 | The Pennsylvania Research Corporation | Low temperature crystallization and pattering of amorphous silicon films |
TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
JP3562588B2 (ja) * | 1993-02-15 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US5275851A (en) * | 1993-03-03 | 1994-01-04 | The Penn State Research Foundation | Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates |
JP2791635B2 (ja) * | 1993-12-24 | 1998-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JPH0786304A (ja) * | 1993-06-25 | 1995-03-31 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
TW295703B (zh) * | 1993-06-25 | 1997-01-11 | Handotai Energy Kenkyusho Kk | |
TW264575B (zh) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
JP3562590B2 (ja) | 1993-12-01 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
GB9401770D0 (en) * | 1994-01-31 | 1994-03-23 | Philips Electronics Uk Ltd | Manufacture of electronic devices comprising thin-film circuits |
US5942768A (en) * | 1994-10-07 | 1999-08-24 | Semionductor Energy Laboratory Co., Ltd. | Semiconductor device having improved crystal orientation |
JPH08148425A (ja) * | 1994-11-22 | 1996-06-07 | Sharp Corp | 半導体装置およびその製造方法 |
JP3364081B2 (ja) * | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6251754B1 (en) * | 1997-05-09 | 2001-06-26 | Denso Corporation | Semiconductor substrate manufacturing method |
JP3116085B2 (ja) * | 1997-09-16 | 2000-12-11 | 東京農工大学長 | 半導体素子形成法 |
-
2000
- 2000-03-23 GB GBGB0006958.3A patent/GB0006958D0/en not_active Ceased
-
2001
- 2001-03-13 WO PCT/EP2001/002823 patent/WO2001071783A1/en active Application Filing
- 2001-03-13 CN CNB018006108A patent/CN100533664C/zh not_active Expired - Fee Related
- 2001-03-13 KR KR1020017014861A patent/KR100756971B1/ko not_active IP Right Cessation
- 2001-03-13 JP JP2001569865A patent/JP2003528460A/ja active Pending
- 2001-03-13 EP EP01933692A patent/EP1214736A1/en not_active Withdrawn
- 2001-03-21 US US09/814,390 patent/US6566179B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN100533664C (zh) | 2009-08-26 |
JP2003528460A (ja) | 2003-09-24 |
WO2001071783A1 (en) | 2001-09-27 |
KR100756971B1 (ko) | 2007-09-07 |
GB0006958D0 (en) | 2000-05-10 |
KR20020009618A (ko) | 2002-02-01 |
EP1214736A1 (en) | 2002-06-19 |
US6566179B2 (en) | 2003-05-20 |
US20010024866A1 (en) | 2001-09-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: TONGBAO HONG KONG CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20070406 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070406 Address after: Floor two, PHILPS tower, 5 East Science Avenue, Sha Tin, Hongkong Science Park, Hongkong Applicant after: Tpo Hong Kong Holding Ltd. Address before: Holland Ian Deho Finn Applicant before: Koninklike Philips Electronics N. V. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090826 Termination date: 20160313 |