CN1341276A - 清洗半导体晶片的方法和装置 - Google Patents

清洗半导体晶片的方法和装置 Download PDF

Info

Publication number
CN1341276A
CN1341276A CN00804321A CN00804321A CN1341276A CN 1341276 A CN1341276 A CN 1341276A CN 00804321 A CN00804321 A CN 00804321A CN 00804321 A CN00804321 A CN 00804321A CN 1341276 A CN1341276 A CN 1341276A
Authority
CN
China
Prior art keywords
semiconductor wafer
chemical
cleaning fluid
closed chamber
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00804321A
Other languages
English (en)
Chinese (zh)
Inventor
M·G·维林
L·张
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Philips Semiconductors Inc
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN1341276A publication Critical patent/CN1341276A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • B08B1/32—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
CN00804321A 1999-10-28 2000-09-13 清洗半导体晶片的方法和装置 Pending CN1341276A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43035399A 1999-10-28 1999-10-28
US09/430,353 1999-10-28

Publications (1)

Publication Number Publication Date
CN1341276A true CN1341276A (zh) 2002-03-20

Family

ID=23707186

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00804321A Pending CN1341276A (zh) 1999-10-28 2000-09-13 清洗半导体晶片的方法和装置

Country Status (5)

Country Link
EP (1) EP1145287A1 (ko)
JP (1) JP2003513443A (ko)
KR (1) KR20010089722A (ko)
CN (1) CN1341276A (ko)
WO (1) WO2001031691A1 (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100373554C (zh) * 2005-01-28 2008-03-05 联华电子股份有限公司 半导体芯片的清洁方法
CN101045233B (zh) * 2006-03-31 2010-09-08 细美事有限公司 处理基材的设备和方法
CN1898776B (zh) * 2003-12-23 2011-04-20 兰姆研究有限公司 用于清洁基板的设备和方法
CN101730929B (zh) * 2007-05-08 2012-07-18 朗姆研究公司 清洁cmp后的晶片的热学方法
CN103878148A (zh) * 2012-12-20 2014-06-25 上海华虹宏力半导体制造有限公司 一种对晶圆表面硅晶渣进行清洗的方法
CN105405930A (zh) * 2015-12-21 2016-03-16 南昌大学 一种太阳电池用多晶硅片的微液滴刻蚀制绒方法
CN110398500A (zh) * 2019-08-06 2019-11-01 武汉鼎泽新材料技术有限公司 评价晶片清洗效率的方法及实验装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382549B1 (ko) * 2000-12-21 2003-05-09 주식회사 하이닉스반도체 반도체 소자의 제조방법
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
CN101935883B (zh) * 2010-09-10 2012-05-02 北京工业大学 超高真空离子源晶片清洗系统
CN102779724A (zh) * 2011-05-11 2012-11-14 均豪精密工业股份有限公司 单面蚀刻方法及单面蚀刻装置
CN102489468B (zh) * 2011-12-23 2015-06-24 保定天威英利新能源有限公司 一种石墨材质基板表层氮化硅的清洗方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989000895A1 (en) * 1987-07-29 1989-02-09 Purusar Corporation Surface treatment to remove impurities in microrecesses
US5129955A (en) * 1989-01-11 1992-07-14 Dainippon Screen Mfg. Co., Ltd. Wafer cleaning method
JPH07115078A (ja) * 1993-10-19 1995-05-02 Shimada Phys & Chem Ind Co Ltd 基板の処理方法およびその装置
US5723019A (en) * 1994-07-15 1998-03-03 Ontrak Systems, Incorporated Drip chemical delivery method and apparatus
JP3119289B2 (ja) * 1994-10-21 2000-12-18 信越半導体株式会社 半導体ウェーハの洗浄方法
JP3366239B2 (ja) * 1997-11-07 2003-01-14 松下電器産業株式会社 プローブカードの洗浄装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1898776B (zh) * 2003-12-23 2011-04-20 兰姆研究有限公司 用于清洁基板的设备和方法
CN100373554C (zh) * 2005-01-28 2008-03-05 联华电子股份有限公司 半导体芯片的清洁方法
CN101045233B (zh) * 2006-03-31 2010-09-08 细美事有限公司 处理基材的设备和方法
CN101730929B (zh) * 2007-05-08 2012-07-18 朗姆研究公司 清洁cmp后的晶片的热学方法
CN103878148A (zh) * 2012-12-20 2014-06-25 上海华虹宏力半导体制造有限公司 一种对晶圆表面硅晶渣进行清洗的方法
CN105405930A (zh) * 2015-12-21 2016-03-16 南昌大学 一种太阳电池用多晶硅片的微液滴刻蚀制绒方法
CN105405930B (zh) * 2015-12-21 2017-04-05 南昌大学 一种太阳电池用多晶硅片的微液滴刻蚀制绒方法
CN110398500A (zh) * 2019-08-06 2019-11-01 武汉鼎泽新材料技术有限公司 评价晶片清洗效率的方法及实验装置

Also Published As

Publication number Publication date
JP2003513443A (ja) 2003-04-08
WO2001031691A1 (en) 2001-05-03
KR20010089722A (ko) 2001-10-08
EP1145287A1 (en) 2001-10-17

Similar Documents

Publication Publication Date Title
US6152148A (en) Method for cleaning semiconductor wafers containing dielectric films
JP4891475B2 (ja) エッチング処理した基板表面の洗浄方法
US6797074B2 (en) Wafer edge cleaning method and apparatus
CN1341276A (zh) 清洗半导体晶片的方法和装置
CN101137461A (zh) 用于硅电极部件蚀刻速度和蚀刻均匀性恢复的方法
EP0959490A2 (en) A semiconductor device washing apparatus and a method of washing a semiconductordevice
CN1310860A (zh) 半导体晶片清洗装置和方法
CN101271835A (zh) 制造半导体器件的方法及半导体制造设备
US6632743B1 (en) Post-planarization, pre-oxide removal ozone treatment
US6153526A (en) Method to remove residue in wolfram CMP
CN100521109C (zh) 一种低介电常数电介质的金属单镶嵌结构制作方法
US6635565B2 (en) Method of cleaning a dual damascene structure
JP4317759B2 (ja) Ｃｏｒａｌフィルムにおいてエッチングおよび剥離工程後の残留物を除去するための方法
TW201842984A (zh) 清潔半導體裝置之方法
WO2000052746A9 (en) A system and method for residue entrapment utilizing a polish and sacrificial fill for semiconductor fabrication
Wang et al. A modified multi-chemicals spray cleaning process for post-CMP cleaning application
US20020170574A1 (en) Differential Cleaning for semiconductor wafers with copper circuitry
US20020162572A1 (en) Method for removing residual particles from a polished surface
KR100591163B1 (ko) 화학기계적 연마 공정에서 유기물 제거를 위한 세정 방법
KR100200742B1 (ko) 세정방법
KR100825528B1 (ko) 실리콘웨이퍼의 연마 방법 및 연마 장치
JP2933481B2 (ja) ポリッシング後のウェーハ表面洗浄方法
KR100526483B1 (ko) 반도체 기판의 세정방법
Rotondaro et al. Sensitive light scattering as a semiquantitative method for studying photoresist stripping
KR19980032136A (ko) 반도체 기판 표면을 연마하여 평탄한 표면 형상을 형성하기 위한 반도체 기판 연마 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication