CN1311716C - 产生远紫外辐照和软x射线辐照的方法和装置 - Google Patents

产生远紫外辐照和软x射线辐照的方法和装置 Download PDF

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Publication number
CN1311716C
CN1311716C CNB02807825XA CN02807825A CN1311716C CN 1311716 C CN1311716 C CN 1311716C CN B02807825X A CNB02807825X A CN B02807825XA CN 02807825 A CN02807825 A CN 02807825A CN 1311716 C CN1311716 C CN 1311716C
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CN
China
Prior art keywords
electrode
trigger
plasma
voltage
ignition
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Expired - Fee Related
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CNB02807825XA
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English (en)
Chinese (zh)
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CN1531840A (zh
Inventor
J·克莱恩
W·内夫
S·赛维特
K·伯格曼
J·潘克特
M·罗肯
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Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Koninklijke Philips NV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Koninklijke Philips Electronics NV
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Publication of CN1531840A publication Critical patent/CN1531840A/zh
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Publication of CN1311716C publication Critical patent/CN1311716C/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
CNB02807825XA 2001-04-06 2002-03-23 产生远紫外辐照和软x射线辐照的方法和装置 Expired - Fee Related CN1311716C (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
DE10117377.6 2001-04-06
DE10117377 2001-04-06
DE10139677.5 2001-08-11
DE10139677A DE10139677A1 (de) 2001-04-06 2001-08-11 Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
EP01125762.3 2001-10-29
EP01125762A EP1248499B1 (de) 2001-04-06 2001-10-29 Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung
PCT/DE2002/001085 WO2002082872A1 (de) 2001-04-06 2002-03-23 Verfahren und vorrichtung zum erzeugen von extrem ultravioletter strahlung und weicher röntgenstrahlung

Publications (2)

Publication Number Publication Date
CN1531840A CN1531840A (zh) 2004-09-22
CN1311716C true CN1311716C (zh) 2007-04-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02807825XA Expired - Fee Related CN1311716C (zh) 2001-04-06 2002-03-23 产生远紫外辐照和软x射线辐照的方法和装置

Country Status (8)

Country Link
US (1) US7126143B2 (enExample)
EP (2) EP1248499B1 (enExample)
JP (1) JP4330344B2 (enExample)
CN (1) CN1311716C (enExample)
AT (1) ATE469533T1 (enExample)
DE (3) DE10139677A1 (enExample)
TW (1) TWI284916B (enExample)
WO (1) WO2002082872A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE10238096B3 (de) * 2002-08-21 2004-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe
US6770895B2 (en) 2002-11-21 2004-08-03 Asml Holding N.V. Method and apparatus for isolating light source gas from main chamber gas in a lithography tool
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10260458B3 (de) * 2002-12-19 2004-07-22 Xtreme Technologies Gmbh Strahlungsquelle mit hoher durchschnittlicher EUV-Strahlungsleistung
JP2004226244A (ja) * 2003-01-23 2004-08-12 Ushio Inc 極端紫外光源および半導体露光装置
DE10310623B8 (de) 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
US6919573B2 (en) 2003-03-20 2005-07-19 Asml Holding N.V Method and apparatus for recycling gases used in a lithography tool
DE10336273A1 (de) * 2003-08-07 2005-03-10 Fraunhofer Ges Forschung Vorrichtung zur Erzeugung von EUV- und weicher Röntgenstrahlung
DE10359464A1 (de) 2003-12-17 2005-07-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung
US7688948B2 (en) 2004-11-29 2010-03-30 Koninklijke Philips Electronics N.V. Method and apparatus for generating radiation in the wavelength range from about 1 nm to about 30 nm, and use in a lithography device or in metrology
DE102004058500A1 (de) * 2004-12-04 2006-06-08 Philips Intellectual Property & Standards Gmbh Verfahren und Vorrichtung zum Betreiben einer elektrischen Entladevorrichtung
DE102005025624B4 (de) 2005-06-01 2010-03-18 Xtreme Technologies Gmbh Anordnung zur Erzeugung von intensiver kurzwelliger Strahlung auf Basis eines Gasentladungsplasmas
KR20080019708A (ko) * 2005-06-14 2008-03-04 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 단락에 대한 방사원 보호 방법
DE102006022823B4 (de) * 2006-05-12 2010-03-25 Xtreme Technologies Gmbh Anordnung zur Erzeugung von EUV-Strahlung auf Basis eines Gasentladungsplasmas
US7687788B2 (en) * 2007-07-16 2010-03-30 Asml Netherlands B.V. Debris prevention system, radiation system, and lithographic apparatus
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US20090134129A1 (en) * 2007-11-27 2009-05-28 General Electric Company Ablative plasma gun apparatus and system
DE102007060807B4 (de) * 2007-12-18 2009-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungsquelle, insbesondere für EUV-Strahlung
NL1036595A1 (nl) * 2008-02-28 2009-08-31 Asml Netherlands Bv Device constructed and arranged to generate radiation, lithographic apparatus, and device manufacturing method.
CN102119583B (zh) * 2008-07-28 2013-09-11 皇家飞利浦电子股份有限公司 用于产生euv辐射或软x射线的方法和设备
US20110109226A1 (en) * 2009-11-06 2011-05-12 Agilent Technologies, Inc. Microplasma device with cavity for vacuum ultraviolet irradiation of gases and methods of making and using the same
CN102625557A (zh) * 2012-03-30 2012-08-01 大连理工大学 大气压裸电极冷等离子体射流发生装置
KR101542333B1 (ko) * 2014-12-26 2015-08-05 한국과학기술연구원 다중 가스셀 모듈을 이용한 극자외선 빔 생성장치
US11373845B2 (en) * 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
CN114442437B (zh) * 2020-10-30 2024-05-17 上海宏澎能源科技有限公司 光源装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201921A (en) * 1978-07-24 1980-05-06 International Business Machines Corporation Electron beam-capillary plasma flash x-ray device
US4596030A (en) * 1983-09-10 1986-06-17 Carl Zeiss Stiftung Apparatus for generating a source of plasma with high radiation intensity in the X-ray region
US5050178A (en) * 1988-04-26 1991-09-17 Siemens Aktiengesellschaft Multichannel pseudo-spark switch and excitation circuit for gas lasers having the switch
WO2001001736A1 (de) * 1999-06-29 2001-01-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur erzeugung von extrem-ultraviolett- und weicher röntgenstrahlung aus einer gasentladung

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2551614B1 (fr) 1983-09-02 1986-03-21 Centre Nat Rech Scient Source intense de rayons x mous, a compression cylindrique de plasma, ce plasma etant obtenu a partir d'une feuille explosee
DE19753696A1 (de) 1997-12-03 1999-06-17 Fraunhofer Ges Forschung Vorrichtung und Verfahren zur Erzeugung von Extrem-Ultraviolettstrahlung und weicher Röntgenstrahlung aus einer Gasentladung
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
US6667484B2 (en) * 2000-07-03 2003-12-23 Asml Netherlands B.V. Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby
RU2206186C2 (ru) 2000-07-04 2003-06-10 Государственный научный центр Российской Федерации Троицкий институт инновационных и термоядерных исследований Способ получения коротковолнового излучения из газоразрядной плазмы и устройство для его реализации
TW503669B (en) * 2000-07-04 2002-09-21 Lambda Physik Ag Method of producing short-wave radiation from a gas-discharge plasma and device for implementing it

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201921A (en) * 1978-07-24 1980-05-06 International Business Machines Corporation Electron beam-capillary plasma flash x-ray device
US4596030A (en) * 1983-09-10 1986-06-17 Carl Zeiss Stiftung Apparatus for generating a source of plasma with high radiation intensity in the X-ray region
US5050178A (en) * 1988-04-26 1991-09-17 Siemens Aktiengesellschaft Multichannel pseudo-spark switch and excitation circuit for gas lasers having the switch
WO2001001736A1 (de) * 1999-06-29 2001-01-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung zur erzeugung von extrem-ultraviolett- und weicher röntgenstrahlung aus einer gasentladung

Also Published As

Publication number Publication date
JP4330344B2 (ja) 2009-09-16
DE10139677A1 (de) 2002-10-17
WO2002082872A1 (de) 2002-10-17
US7126143B2 (en) 2006-10-24
DE10291549D2 (de) 2004-04-15
DE50115489D1 (de) 2010-07-08
JP2004530269A (ja) 2004-09-30
US20040183037A1 (en) 2004-09-23
CN1531840A (zh) 2004-09-22
EP1374650A1 (de) 2004-01-02
EP1248499A1 (de) 2002-10-09
ATE469533T1 (de) 2010-06-15
EP1248499B1 (de) 2010-05-26
TWI284916B (en) 2007-08-01

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