CN1309876C - 用于阳极氧化的设备及方法 - Google Patents

用于阳极氧化的设备及方法 Download PDF

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Publication number
CN1309876C
CN1309876C CNB95104060XA CN95104060A CN1309876C CN 1309876 C CN1309876 C CN 1309876C CN B95104060X A CNB95104060X A CN B95104060XA CN 95104060 A CN95104060 A CN 95104060A CN 1309876 C CN1309876 C CN 1309876C
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CN
China
Prior art keywords
substrate
negative electrode
lead
anode
anodic oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB95104060XA
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English (en)
Chinese (zh)
Other versions
CN1124304A (zh
Inventor
小沼利光
菅原彰
上原由起子
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN1124304A publication Critical patent/CN1124304A/zh
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Publication of CN1309876C publication Critical patent/CN1309876C/zh
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
CNB95104060XA 1994-03-17 1995-03-17 用于阳极氧化的设备及方法 Expired - Fee Related CN1309876C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP74023/94 1994-03-17
JP07402394A JP3217586B2 (ja) 1994-03-17 1994-03-17 陽極酸化装置及び陽極酸化方法

Publications (2)

Publication Number Publication Date
CN1124304A CN1124304A (zh) 1996-06-12
CN1309876C true CN1309876C (zh) 2007-04-11

Family

ID=13535118

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB95104060XA Expired - Fee Related CN1309876C (zh) 1994-03-17 1995-03-17 用于阳极氧化的设备及方法

Country Status (4)

Country Link
JP (1) JP3217586B2 (ko)
KR (1) KR950034597A (ko)
CN (1) CN1309876C (ko)
TW (1) TW354854B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101942687A (zh) * 2010-09-26 2011-01-12 西华大学 活塞顶面硬质阳极氧化方法

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* Cited by examiner, † Cited by third party
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JP2006058559A (ja) * 2004-08-19 2006-03-02 Bridgestone Corp 画像表示用パネル及びその製造方法
KR100851204B1 (ko) * 2006-11-09 2008-08-07 금오공과대학교 산학협력단 양극 산화 장치
CN101280447B (zh) * 2007-04-07 2011-03-09 山东滨州渤海活塞股份有限公司 铝活塞环槽自动硬质阳极氧化装置
TWI449812B (zh) * 2011-08-10 2014-08-21 Chenming Mold Ind Corp 漸層陽極表面處理方法
CN103590084B (zh) * 2012-08-16 2018-08-17 盛美半导体设备（上海）有限公司 一种快速制备纳米结构阵列的装置及方法
JP5754520B2 (ja) * 2013-01-22 2015-07-29 秋田県 電界洗浄方法、電界免疫組織染色方法、電界洗浄装置及び、電界免疫組織染色装置
KR101498241B1 (ko) * 2013-09-17 2015-03-05 신태호 인공치아 보철의 표면 처리장치
CN104934481B (zh) * 2014-03-21 2017-10-13 北京大学深圳研究生院 一种薄膜晶体管及其制备方法
CN105543927B (zh) * 2015-12-23 2018-05-04 广东长盈精密技术有限公司 阳极氧化系统
CN105671623B (zh) * 2016-04-02 2017-12-05 西南石油大学 一种吸盘式微弧氧化夹具
CN105646876B (zh) 2016-04-08 2018-06-19 南京工业大学 一种有机催化制备聚酯酰胺的方法
TWI631238B (zh) * 2017-06-23 2018-08-01 五環貿易有限公司 Processing method for progressive dyeing of workpiece surface
JP2020105590A (ja) 2018-12-27 2020-07-09 キオクシア株式会社 基板処理装置および基板処理方法
CN114717627B (zh) * 2021-01-04 2024-04-19 善统工业股份有限公司 用于金属物件阳极处理的治具
CN115125599B (zh) * 2021-08-03 2023-09-12 天津科技大学 一种制备多孔阳极氧化铝膜的装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272338A (en) * 1975-12-15 1977-06-16 Uemura Kogyo Kk Method of increasing efficiency of anodizing process
US4118303A (en) * 1976-08-30 1978-10-03 Burroughs Corporation Apparatus for chemically treating a single side of a workpiece

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5272338A (en) * 1975-12-15 1977-06-16 Uemura Kogyo Kk Method of increasing efficiency of anodizing process
US4118303A (en) * 1976-08-30 1978-10-03 Burroughs Corporation Apparatus for chemically treating a single side of a workpiece

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101942687A (zh) * 2010-09-26 2011-01-12 西华大学 活塞顶面硬质阳极氧化方法

Also Published As

Publication number Publication date
TW354854B (en) 1999-03-21
CN1124304A (zh) 1996-06-12
JP3217586B2 (ja) 2001-10-09
JPH07263437A (ja) 1995-10-13
KR950034597A (ko) 1995-12-28

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Granted publication date: 20070411

Termination date: 20130317