CN1309876C - Apparatus and method for anodic sxidation - Google Patents
Apparatus and method for anodic sxidation Download PDFInfo
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- CN1309876C CN1309876C CNB95104060XA CN95104060A CN1309876C CN 1309876 C CN1309876 C CN 1309876C CN B95104060X A CNB95104060X A CN B95104060XA CN 95104060 A CN95104060 A CN 95104060A CN 1309876 C CN1309876 C CN 1309876C
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
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Abstract
A method for anodic oxidation equipment and use for such equipment, which can improve the quality and the thickness uniformity of an anodic oxidation film not only in sigle film but also among multi-film. The title equipment is provided with the following; a cathode electrode, anode wirings thin film metal electrically connected with the anode wirings and anodic oxidation solution flowing out in the part between the cathode electrode and the thin film metal. The anodic oxidation solution connects electrically the cathode electrode with the anode wirings. The thin film metal can be set on the rotary surface.
Description
The present invention relates to the substrate which is provided with wiring is carried out anodised Apparatus and method for.Specifically, anodic oxidation of the present invention is applicable to and makes the circuit substrate that is formed with thin-film semiconductor device on it.The invention still further relates to the equipment of a plurality of substrates of subsequent treatment one by one.
In recent years, to having on the substrate of Surface Insulation, for example glass substrate adopts thin-film semiconductor device, as thin film transistor (TFT) or thin film diode (TFD), provides the Study on Technology of unicircuit (IC) very active.Especially, active matrix liquid crystal device or image sensor need use this class thin film technique.Specifically, expectation active matrix liquid crystal device has single chip architecture, and the peripheral drive circuit that wherein is used to change the active matrix thin film semiconductor element of pixel and is used to drive active-matrix device all is formed on the common substrate.
Make the circuit that comprises thin-film semiconductor device on the substrate of anodic oxidation through being usually used in having Surface Insulation.Anodic oxidation is performed such: treat that the metal of oxidation is connected with the positive pole of direct supply, as anode and immerse electrolytic solution, simultaneously another electrode is also immersed electrolytic solution as negative electrode, between anode and negative electrode, add electric current by electrolytic solution, thereby make this metallic surface anodic oxidation.
Anodic oxidation is broadly divided into two classes: a kind of is the blocking type anodic oxidation, and another kind is the microporous anodic oxidation, as the applicant described in the previous U.S. Patent application No.08/307167.
The blocking type anodic oxidation can adopt the neutrality that contains 3 to 10% tartrate, oxalic acid or acetate to obtain to the weak acid electrolytic solution.This anodic oxidation has fine and close composition, and is first pore isolator, has excellent insulating property and high voltage-resistent characteristic.And be transparent.
In containing the circuit of thin-film semiconductor device, the blocking type anodic oxidation is formed on the interconnect surface, prevents from leakage current to occur between the interconnection.In addition, also be used as the isolator of the metal-insulator knot that forms MIM (metal-insulator-metal type) diode.
The microporous anodic oxidation can be adopted to contain 3 to 20% citric acid, nitric acid, phosphoric acid, chromic acid or vitriolic acidic aqueous solution and obtain as anodic oxidation solution.Because this anodic oxidation is a porous, thereby is easy to carry out etch processes.In addition, can in the hole, dye, obtain painted anodic oxidation thus.
Above-mentioned anodic oxidation can be actually used in the manufacturing process of the insulated gate thin film transistor that comprises crystal semiconductor, as described in above-mentioned U.S. Patent application.
According to disclosed technology, make the side surface anodic oxidation of grid at first at least, and then the mask that utilizes anodic oxidation or form by anodic oxidation, by mixing, in the active layer between source/drain region and grid, the high resistance area of even width is set with self-aligned manner.Thus, can be suppressed at leakage current when adding reverse bias voltage on the grid.In addition, change anodised width (thickness), can obtain to have the thin film transistor of desired properties.
For example, on single substrate, include the monolithic integrated circuit that active-matrix device and being used for drives the driving circuit of active-matrix device, by the Thickness Design of the anode oxide film on the side surface that is formed at grid is become bigger, thereby the expansion high resistance area can make the TFT of active-matrix device have less leakage current.In driving circuit because decoding scheme, CPU (central processing unit), memory circuit etc. require high-speed cruising, so anodised width need narrow down so that the thin film transistor with narrower high resistance area is provided.
The employed legacy equipment of anodic oxidation as shown in Figure 1.Referring to Fig. 1, reference number 1 is represented solution container, and the 2nd, anodic oxidation solution, the 3rd, have the substrate of the film metal wiring of the oxidation treated, the 4th, negative electrode, the 5th, clip.Metal line on the substrate 3 is connected with the anode of direct supply by clip 3, and negative electrode is connected with the negative pole of direct supply simultaneously.Negative electrode can be relative with each substrate and puts.
The problem that this traditional equipment exists is that anodic oxidation solution can not stir during reaction.
Referring to Fig. 1, can see, by with clip 5 clamping substrates, substrate 3 is placed anodic oxidation solution 2, from last side suspension substrate.Oxidation process along with in the anode oxidation process of the formation usefulness of the blocking type zone of oxidation with high resistivity begins to form the anodic oxide coating with high resistivity in conductive line surfaces.Therefore, if the clip on the anode 5 is got wet by anodic oxidation solution, then the electric current between clip 5 and the negative electrode 4 will flow by anodic oxidation solution rather than by lead.As a result, the electric current that is added on the lead descends, and can't finish enough anodic oxidations.
For fear of the problems referred to above, in anode oxidation process, can not stir electrolytic solution, so that the electrolytic solution plane stability.
But, treat that anodised total surface is covered by old anodic oxidation electrolyte, this does not expect.That is hydrogen that oxidation produced and the ion in the solution or impurity can locally hinder oxidation, so that can not improve the homogeneity of whole on-chip quality or thickness.Especially when the anodic oxidation of microporous anode oxide film, the film thickness on the top of same substrate trend is different from the film thickness of bottom.
In order to prevent that clip from being got wet, substrate 3 should be placed to and makes clip apart from the setting of solution surface certain distance.Fig. 2 is the orthographic plan of substrate 3, and wherein zone 10 contacts anodic oxidation solutions, and zone 11 does not contact solution.Owing to there are the problems referred to above, the ratio of zone 11 and whole substrate can not reduce too much.
And in reaction process, if accidental the touching of anodic oxidation solution do not carried out anodised zone as yet, then electric current will accumulate in this zone, form anodic oxidation thereon, and the reaction on the already oxidised position can not continue.Therefore, it is unstable that alive raising will become, and the formation of high resistivity film becomes difficult.
By CONTROL PROCESS as follows, promptly the region area of oxidation not yet can be reduced in the stabilizing solution surface, thereby prevents that clip from being got wet by anodic oxidation solution.
When handling a plurality of substrate, can produce more serious problem.In the equipment of the prior art of Fig. 1, adopt a plurality of substrates of same electrolysis of solutions groove primary treatment.Yet, as mentioned above, can not stir anodic oxidation solution in the anode oxidation process.Therefore, according to the position in the electrolysis of solutions groove, it is inhomogeneous that the state of anodic oxidation solution will become.So even at the substrate of same batch processing, the homogeneity of its thickness and quality can not improve.Even stirred, it also is very difficult will reaching same oxidizing condition to all substrates.
And the substrate of co-batching does not often change on thickness and quality.This is because the original state of anodic oxidation solution can not keep through the entire treatment process.
From the above as can be known, even in a collection of, only handle a substrate, can not improve each substrate (batch) between homogeneity.But the anodic oxidation solution of changing after each batch in the electrolyzer also is unpractical, because this will lose time and reduce productivity.
Above-described in single substrate, in single batch and the homogeneity of anodic oxidation thickness that between different batches, produces and quality especially unfavorable, for example in active matrix liquid crystal display device, promptly use the situation of several large area substrates to tens square centimeters, and single substrate and in enormous quantities in need the situation of high homogeneity because the characteristic of thin-film semiconductor device is influenced by the heteropical of above-mentioned thickness and quality very easily.
In addition, the size of active matrix liquid crystal display device is increasing.And, since from a substrate produce 2 to 9 substrates or even more substrate, processed chip area is also increasing.Therefore importantly be positioned at the size that reduces equipment.
Yet, when expectation adopts different electrolytic solution to finish two types anodic oxidation, must prepare to hold two containers of two kinds of electrolytic solution, perhaps must thorough clean container when changing solution.And another space must be provided, clean substrate for water.So, must take sizable space and come erecting equipment.
The objective of the invention is to by anodic oxidation solution is flowed, and between film and power electrode, keeping electrically contacting, thereby can carry out anodic oxidation treatment by anodised film on the substrate being formed at.
Fork one purpose of the present invention is the film that is formed on the substrate is carried out anodic oxidation treatment, improves being formed on the quality of single on-chip anode oxide film and the homogeneity of thickness simultaneously.
Another object of the present invention is to carry out anodic oxidation treatment, not only improve the homogeneity of film quality and thickness simultaneously, and improve the controllability that is formed at single on-chip anode oxide film being formed at a plurality of on-chip metallic films.
A further object of the present invention is in single container, with different anodic oxidation solutions, carries out dissimilar anodic oxidation treatment.
Further purpose of the present invention is to adopt single container, except implementing the anodic oxidation step, also implements following steps: remove photoresist material, etching, with water rinse etc.
A step purpose more of the present invention is the electrode and the interconnection line that are connected with on-chip thin-film semiconductor device are carried out anodic oxidation treatment.
According to first scheme of the present invention, the equipment that can carry out anodic oxidation treatment comprises: the support unit that is used to clamp the substrate with the anodized surface treated; Be connected as anodic first electrode with described surface electrical; As second electrode of negative electrode, in the face of the described object and the gap that is separated by with it; Be used between described first and second electrodes, applying the power supply of voltage; During making alive, make mobile device in the gap of electrolytic solution between described second electrode and described object.Particularly, the plane is horizontally disposed on the support unit of clamping object, and negative electrode is that the last plane parallel ground with support unit is provided with, as shown in Figure 3.
According to another scheme of the present invention, at least one is provided with rotating mechanism in negative electrode and the support unit, so that can stir electrolytic solution in the anode oxidation process.
According to another program of the present invention, be used for anodised electrolytic solution and import continuously, so that negative electrode and treat that the gap between the oxidized surface is full of electrolytic solution from a nozzle.
Below with reference to the preferred embodiments of the present invention, above-mentioned and further feature of the present invention is elaborated.
Fig. 1 is the synoptic diagram of anode oxidation furnaces in the prior art.
Fig. 2 is the orthographic plan corresponding to the substrate of handling in Fig. 1 equipment.
Fig. 3 is the synoptic diagram that carries out anodised equipment according to the present invention.
Fig. 4 is the substrate plane figure that handles according to the present invention.
Fig. 5 A-5C is the sectional view according to wire connector of the present invention.
Fig. 6 A-6D is the synoptic diagram according to negative electrode of the present invention.
Fig. 7 A and 7B are the synoptic diagram according to negative electrode of the present invention.
Fig. 8 A-8F is a sectional view of showing the manufacturing process of semiconductor device according to the invention.
Fig. 9 A-9C is an orthographic plan of showing the manufacturing process of semiconductor device according to the invention.
Figure 10 can carry out anodised equipment synoptic diagram according to an embodiment of the invention.
Figure 11 can carry out anodised equipment synoptic diagram according to an embodiment of the invention.
Figure 12 can carry out anodised equipment synoptic diagram according to an embodiment of the invention.
Figure 13 can carry out anodised equipment synoptic diagram according to an embodiment of the invention.
Figure 14 is the synoptic diagram according to multifunctional equipment of the present invention.
Figure 15 A-15D is a sectional view of showing the manufacturing process of thin film transistor.
Figure 16 is the orthographic plan of substrate with wiring of the oxidation treated.
Further describe the present invention below in conjunction with the preferred embodiments of the present invention.But, should be understood that the present invention is not limited to the following example.
Present embodiment relates to as shown in Figure 4 the lead that is formed on the substrate is carried out anodic oxidation.
Referring to Fig. 4, but substrate is provided with the lead of being made by anodic oxidation material such as aluminium 41 and 42.Lead 41 and 42 is equipped with anode interconnect and connects the zone 43 and 44 that part is connected.
Referring to Fig. 3, anodic oxidation solution 22 is injected into electrolytic solution groove 21.In the present embodiment, in order to form the barrier type anode oxide film on lead, being used for anodised solution is 1,2 ethylene glycol solution, wherein dissolving contains 3 to 10% tartrate, boric acid or phosphoric acid, and makes its neutralization (be pH value transfer to be approximately 7) with ammoniacal liquor.More particularly, present embodiment uses and contains 3% tartaric 1,2 ethylene glycol solution.
In anodic oxidation solution 22, the substrate 23 that has the thick aluminium conductor of 6000 dusts 41 and 42 on it is fixed on the platform 24 by the vacuum pad (not shown).The material that other alternative aluminium is made lead comprises tantalum, titanium or silicon.
And negative electrode should be manufactured by the material that can tolerate anodic oxidation solution.For example, can do by platinum, gold, lead, carbon, stainless steel, aluminum, also can be by making of gold or platinum coated with aluminum, titanium, nickel or copper.
On substrate 23,, with 29 aluminium conductor 41 is connected with first and second anodes with 42 with interconnection line 28 at the joining region 43 and 44 places that adopt wire connector 26 and 27.Each interconnection line 28 is connected with the positive pole of the different direct supplys that can control individually with 29.Negative electrode is connected wire connector 26 and 27 to have and makes each interconnection line 28 and 29 and anodic oxidation solution 22 isolated functions with the negative pole of direct supply.
Among Fig. 3, wire connector 26 and 27 extends from electrolytic solution groove 21 bottoms, and is connected with the lead for the treatment of oxidation.According to the present invention, can constitute being connected between the electrode of on-chip lead and power supply by the mode of expectation.For example, interconnection line 28 and 29 can extend from the top and the sidepiece of electrolytic solution groove.And interconnection line can pass negative electrode 25 and extend.Moreover, can constitute connection at substrate back, and substrate back is connected with the lead for the treatment of oxidation.
According to a preferred embodiment of the invention, wire connector 26 and 27 can have shown in Fig. 5 A-5C and constructs.
Referring to Fig. 5 A, connect device and comprise cylinder 84, the internal cavity 83 and the terminals 85 that are communicated with vacuum extractor (vacuum pump).Between cylinder 84 front ends and substrate 81, also be provided with O shape ring 82, guarantee gastight cavity with this.If can not contact terminals 85 by holding anode oxidizing solution 22, then can omit O shape ring, in addition, can use the leather cup 88 of bleeding shown in Fig. 5 C to replace O shape ring.Can use as materials such as plastics, rubber, vinyl polymer, pottery, metal or tetrafluoroethylene to be used for the O shape ring or the leather cup etc. of bleeding, thereby wire connector is fixed on the substrate tightly.
Can the internal pressure of junctor internal cavity 83 be reduced, so that wire connector can be fixed on the substrate 81 tightly by vacuumizing with the vacuum pump (not shown).And, can adopt elastomerics (not shown) such as spring or rubber, terminals 85 are pressed on the substrate, with electrically contacting of assurance and lead.
Pressure in the internal cavity 83 of release wire connector can be removed wire connector simply.
In single wiring body 84 a plurality of terminals 85 can be set, perhaps single wire connector can be used for constituting a plurality of electrical connections.
And, the wire connector stationary installation that wire connector is separated by vacuum can be set respectively.For example, the wire connector stationary installation on one or more cylinders 84 that are docked at wire connector by vacuum.
Referring again to Fig. 5 B, do not comprise cavity to be vacuumized in the structure, thereby only depended on pressure 87 is fixed in substrate to wire connector.Can exert pressure from substrate top, make wire connector face toward substrate and be pressed on the substrate.In addition, can be provided with the parts that are formed in wire connector towards substrate back (bottom of figure), so that substrate is by applied force clampings such as these parts and screw, springs.
Also can adopt simultaneously and pressurize and bleed.
In the present embodiment, in the following manner substrate 23 is placed among the anodic oxidation solution 22.
Place before the substrate 23, the last plane of platform 24, wire connector 26 and 27 and negative electrode 25 all move to the top of the fluid level of anodic oxidation solution 22.After placing substrate 23 on the platform 24 by transport unit, aim at the joining region 43 and 44 of leads 41 and 42 with two wire connectors 26 and 27 of anode interconnect line 28 and 29, and be fixed on the substrate by bleeding, so that anode interconnect line 28 is connected with 42 with lead 41 with 29.
Then, platform 24 moves into solution with substrate and wire connector.Simultaneously or after a while, negative electrode 25 face relative with substrate moved under the fluid level of anodic oxidation solution 22.
After the oxide treatment, by implementing each step with above-mentioned opposite order.More particularly, after the negative electrode 25 that moves up, substrate 23 and wire connector 26 and 27 break away from anodic oxidation solution 22, and the decompression state in the wire connector is released, thereby make wire connector 26 and 27 break away from the joining region 43 and 44 of lead.Then substrate 23 is moved to and carry out next position of handling.
Before substrate is sent to next process points, preferably with high speed rotating substrate 23, removes anodic oxidation solution, and make gained substrate drying from its surface.Suitable swivel arrangement is set such as motor can be realized this purpose at platform.
In above-mentioned processing or afterwards, can treat that the substrate of oxidation places on the platform to the next one, so that a plurality of substrates are carried out next anodic oxidation successively.
Before placing on the platform,, remove the anodic oxidation solution on the platform to next substrate preferably with high speed rotating platform 24.
On-chip lead 41 with 42 then respectively by anodic oxidation to different thickness.
Apply constant current simultaneously at first and second interconnection lines 28 and 29.The voltage that is applied on interconnection line 28 and 29 is risen to V
1, keep this voltage to reach 1 hour then.Afterwards, be V keeping 28 making alives of first interconnection line
1The time, apply constant current at second interconnection line 29, further voltage is risen to the second value V
2, keep this state to reach 1 hour subsequently.As a result, on first and second leads 41 and 42, can form the different anode oxide film of thickness.For example, V
1In the scope of 50-150V, select, as 100V, and V
2In the scope of 100-250V, select, as 200V (V
1＜V
2).Thus, with lead 41 that first interconnection line 28 is connected on obtain the anodic oxide coating of thick 1200 dusts, with lead 42 that second interconnection line 29 is connected on the anodic oxide coating of thick 2400 dusts of acquisition.
In the present invention and since interconnection line 28 and 29 fully with the anodic oxidation solution isolation, so the big thickness that the anode oxide film of high-insulation is formed up to have high reliability.And, can stir anodic oxidation solution 22 by the rotating paddle that is located in the electrolytic bath according to the present invention.Therefore, during anodic oxidation, the surface energy for the treatment of oxidation contacts with fresh anodic oxidation solution.Thereby, can improve the homogeneity of whole on-chip thickness and quality.
In the present embodiment, the substrate that has the lead of the oxidation treated on negative electrode and its is immersed anodic oxidation solution fully.But anodic oxidation solution should be present in negative electrode at least and treat between the lead of oxidation, so that form electrical connection by solution.
For example, by the one or more holes that in the relative negative electrode of putting, pass, anodic oxidation solution is flowed between negative electrode and substrate with substrate.Negative electrode can be a mesh electrode, so that electrolytic solution can pass therebetween.
Referring to Fig. 6 A, showed a kind of shape of cathode plane.Be provided with a plurality of holes 50 that anodic oxidation solution can flow through.Fig. 6 B has showed another kind of example, and the wire connector 26 and 27 that wherein is connected with lead is located in the negative electrode.
Shown in Fig. 7 A and 7B, the shape in the hole 50 that anodic oxidation solution flows through can be specific shape, so that determine the flow direction between negative electrode and substrate.Negative electrode also can be any shape, shown in Fig. 6 C and 6D.
Can at random determine the position of anodic oxidation solution flow orifice.But, preferably arrange each hole in the following manner, even anodic oxidation solution can evenly flow in the scope of substrate surface.The hole be provided with can be concentric or radial.
In addition, the setting of negative electrode not only can be parallel to substrate flat, and can be tubulose or nozzle-like, makes anodic oxidation solution pass it and flows, so that on-chip interconnection line can be connected with cathodic electricity by anodic oxidation solution.
Substrate can become arbitrarily angledly to be provided with the anodic oxidation solution plane.That is, can be with respect to solution plane parallel ground, vertically or obliquely be provided with.For example, substrate that is arranged in parallel and negative electrode can tilt, so that anodic oxidation solution flows downward between substrate and negative electrode.
Also can rotating cathode or substrate, perhaps rotate both.Adopt this mode, can further improve the thickness in the same plane and the homogeneity of quality.
The area of negative electrode is preferably identical with substrate or greater than substrate.Yet,, can carry out anodic oxidation treatment effectively if cathode area is to treat more than 20% of oxidized portion.
In the present embodiment, negative electrode is positioned at the top of substrate.In this way, can avoid the decline of the anodic oxidation reactions efficient that the generation owing to hydrogen causes, this is because can prevent that the hydrogen that produces in the anodic oxidation treatment from remaining in the surface for the treatment of sunization.
Embodiment 2
Present embodiment relates to an employing common container (chamber), comprises the multiple different treatment of anodic oxidation.Present embodiment also relates to the different anodic oxide coating of formation thickness in same processing, and this is applicable to the different a plurality of TFT of manufacturing property on single substrate.
Fig. 8 A to 8F shows according to embodiments of the invention, makes the sectional view of insulated gate thin film transistor (TFT) on glass substrate.Fig. 8 A to 8G is the dashdotted sectional view along Fig. 9 A to 9C, and Fig. 9 A to 9C is pending substrate plane figure.
On the surface of the Corning of 300mm * 400mm or 100mm * 100mm 7059 glass substrates 201, the silicon oxide deposition film is as basement membrane, and thickness is the 1000-3000 dust, for example 2000 dusts.This silicon oxide film is the deposit by sputter in oxygen atmosphere.For batch process, can adopt TEOS this film of deposit in plasma CVD in addition.
Then, adopt plasma CVD or LPCVD deposition of amorphous silicon film, thick is the 300-5000 dust, is preferably the 500-1000 dust, under 550-600 ℃ temperature, exposes 24 hours in reducing atmosphere then, thereby obtains crystal silicon film.The also available laser radiation of this crystallization steps is carried out.Crystal silicon film is carved into island active layer district 203 and 204.Afterwards, the silicon oxide film 205 by the thick 700-1500 dust of sputtering deposit.
Adopt electron beam evaporation or sputter, thick 1000 dusts-3 of deposit μ m, for example the aluminium film of 6000 dusts wherein contains the silicon of 1wt% or the scandium of 0.1-0.3wt%.Apply photoresist material (for example by Tokyo Ohka Kogyo Co., the OFPR 800/30cp that Ltd. produces) by spin coating.Before applying photoresist material, by anodic oxidation, the pellumina that forms thick 100-1000 dust suits on the whole surface of aluminium film, so that photoresist material can closely be attached to the pellumina surface.By corrosion photoresist material and aluminium film are carved into interconnection line 206 and 209, gate electrode part 207,208 and 210 (Fig. 8 A).
Stay the photoresist material on gate electrode part and the interconnection line, when the anodic oxidation of subsequent step, play the mask effect, prevent that aluminium film top from producing anodic oxidation.The orthographic plan of resulting structures is shown in Fig. 9 A.Gate electrode position 207 and 208 and interconnection line 209 be electrically connected mutually, and will be called first lead, and interconnection line 206 and gate electrode position 210 are electrically connected mutually, and will be called second lead.Electrically insulated from one another between first and second leads.
Figure 10 is the anodic oxidation equipment that falls according to the invention process.
Referring to Figure 10, the substrate 201 that utilizes automatic control arm (not shown) that previous step is sent after rapid places on the platform 401, and fixes on it with vacuum pad.Platform 401 is rotatable, and can be used as spinner.
The bell jar 400 that is lower than platform 401 upper surfaces and is provided with returns the position among the figure.Negative electrode 402 descends from upper surface, and the wire connector 404 and 405 that is arranged in the negative electrode 402 is fixed on the joining region that first and second on the substrate 201 connects up.The joining region is arranged on the diagonal lines of substrate 201 in this example.
The two dimensional structure of and the negative electrode 402 put relative with substrate is shown in Fig. 6 D.The mask that negative electrode is relative with substrate is porose 403, and anodic oxidation solution is moving by this orifice flow, and wire connector 404 is connected with second anode interconnection line 407 with first anode interconnection line 406 with 405.
The used wire connector 404 and 405 of present embodiment has the structure of Fig. 5 A, and do bleed fixing.Wire connector 404 and 405 is electrically connected with the first anode interconnection line 406 and second interconnection line 407 respectively.Negative electrode 402 and anode interconnect line 406 and 407 electrical isolations.The first and second anode interconnect lines 406 are connected with the positive pole of the independent control of direct supply respectively with 407.
Adopt the connection of brush and so on,, also can guarantee being electrically connected between direct supply and the first and second anode interconnect lines 406 and 407 even during the negative electrode rotation.And substrate 201 and negative electrode 402 is preferably in below the 10mm in the face of the distance between the plane of substrate for example is taken as below the 150mm, specifically is 2mm in this example.Reduce this distance, can make the gap between negative electrode and the substrate be easy to be full of by anodic oxidation solution.
Subsequently, with 100-500 rev/min of (for example 200rpm) rotation platform 401, substrate 201 and negative electrode 402, import anodic oxidation solution 408 by the hole 403 that is located on the negative electrode 402 simultaneously.Anodic oxidation solution can adopt the acidic aqueous solution that contains the 3-20% citric acid, or nitric acid, phosphoric acid, the sour water flow liquid of chromic acid.In this example, use the 3% vitriolic aqueous solution.Make anodic oxidation solution remain on 30-80 ℃ temperature range, for example 30 ℃.Ceramic heater, Peltier element etc. are set, the may command solution temperature in negative electrode.
The amount that anodic oxidation solution 408 should be enough to be full of the gap between substrate and the negative electrode flows.Owing to the platform rotation produces centrifugal force, anodic oxidation solution disperses to bell jar 400 from the periphery of substrate and negative electrode.The anodic oxidation solution of being collected by bell jar 400 flows to the bottom of bell jar 400 downwards by exhaust outlet 409, and passes through the delivery pipe device for transferring.Best, to used different types of liquid in handling, different delivery pipe systems is set.
Originally, only power to second lead, so that carry out anodic oxidation by second interconnection line.Institute's making alive amplitude is 5-30V, 8V for example, and the time length is 5-240 minute, for example 20 minutes.Thus, form the anode oxide film 210 and 211 of microporous on the side surface of second lead that comprises lead 206 and grid position 210, thickness is 3000 dusts-25 μ m, and 0.5 μ m for example is shown in Fig. 8 B and 9B.By controlling anodised time and temperature, can regulate anodised thickness.Because first lead that comprises wires/electrodes 207,208 and 209 is making alive not, so not anodic oxidation of first lead in this step.
After above-mentioned anodic oxidation, stop the rotation platform 401 and negative electrode 402 make cathode oxidation solution stop to flow simultaneously.Then, unclamp the wire connector 404 and 405 that is in stationary state (decompression), pull up negative electrode 402.
Then, with 2500-4000 rev/min, for example 3000 rev/mins speed was rotated platform 401 and substrate 201 30 seconds, excluded anodic oxidation solution residual on the substrate, and made substrate 201 dryings.
With 100-1000 rev/min, for example 300 rev/mins speed rotation platform 401 and the substrate 201 that go up to be provided with thereof once more, move first nozzle 410 simultaneously, make pure water pass through the central part of rotary substrate 201 to dirty.According to said method clean the last plane of substrate 201.
After rotating 2 minutes, stop to flow of pure water, first nozzle 410 returns its original position.With 2500-4000 rev/min of for example 3000 rev/mins speed rotation platform 401 and substrate 201 once more, remove residual pure water on the substrate, and make substrate 201 dryings.The pure water of being collected by bell jar 400 flows to the downside of bell jar 400 by discharge outlet 409, and by belonging to the delivery pipe device for transferring of the tubing system different with the used tubing system of discharging anodic oxidation solution.
Afterwards, remove the photoresist material mask with the liquid stripper.With 100-1000 rev/min, as 500 rev/mins speed rotation platforms and on substrate 201, move second nozzle 411 simultaneously, make stripper flow to the central part of rotary substrate 201.With well heater stripper is heated to 50-80 ℃.
Rotation stopped the stripper that flows after 5 minutes continuously, and second nozzle 411 returns its original position.With 2500-4000 rev/min, as 3000 rev/mins speed rotation platform and substrate 30 seconds once more, remove stripper residual on the substrate, make substrate 201 dryings.The stripper of discharging by discharge outlet is by belonging to the delivery pipe device for transferring of the different tubing system of the tubing system used with discharging anodic oxidation solution and pure water.
By aforementioned manner, utilize nozzle 410 usefulness pure water to clean the last plane of substrate 201.
After the cleaning, adopt different anodic oxidation solutions, press and the identical mode of formation microporous anodic oxidation, on first and second leads, all form the blocking type anodic oxidation again.
In addition, can use the negative electrode identical negative electrode used with forming the microporous anodic oxidation, yet, for the solution that prevents to remain on the electrode mixes, can adopt another electrode as negative electrode 402 with same structure.
Afterwards, with 100-500 rev/min, 200 rev/mins of rotation platforms 401 for example, substrate 201 and negative electrode 402, anodic oxidation solutions 408 are supplied with in the hole from be located at negative electrode 402 403 simultaneously, so that be full of the gap between substrate and the negative electrode.Anodic oxidation solution can adopt 1,2 ethylene glycol solution, and wherein dissolving contains tartrate, boric acid or the phosphoric acid of 3-10%, and to make it be neutralized to the pH value with ammoniacal liquor be about 7.Speed of rotation is 100-500 rev/min, for example 200 rev/mins.
Simultaneously, on first and second leads, apply constant current.Best, solution temperature remains on and is not higher than room temperature, and for example 10 ℃ or lower, so that improve oxidation quality.By ceramic heater is set in negative electrode, Peltier element etc. can be controlled solution temperature.
The discharging of anodic oxidation solution is identical with the anodised formation situation of microporous.
During the anodic oxidation, apply electric current and rise to 100V until voltage.Thus, on the upper surface of electrode/lead 206 to 210 and side surface, form blocking type anode oxide film 213 to 217, shown in Fig. 8 C.Thickness and institute's making alive of anode oxide film 213 to 217 are proportional.In this example, because voltage rises to 100V, the anodised thickness of gained is 1200 dusts.The thickness of blocking type anode oxide film should be more than 500 dusts.If thickness less than 500 dusts, in follow-up etching step, exists electrode materials (aluminium) by the undesirably danger of wash-out.
Even should be noted that after forming the microporous anode oxide film and carry out the blocking type anodic oxidation, the oxide film that the back forms also is formed between lead and the porous anodic oxide film.
After the anodic oxidation step,, remove anodic oxidation solution fully from substrate surface by method as hereinbefore.
Finish the anodic oxidation step in a manner described.After bell jar 400 moved down, use automatic control arm etc. that substrate 201 is sent to transport case or conveyer, deliver to next step.By new substrate is placed on the platform, can make a plurality of substrates carry out anodic oxidation continuously.
Subsequently, referring to Fig. 8 D, adopting ion doping method, is mask with gate electrode position (being gate electrode and anode oxide film on every side), presses self-aligned manner the active layer 203 and 204 of foreign ion injection TFT, forms impurity (source/leakage) district 218,219 and 220.In this example, impurity gas adopts phosphine (PH
3) and diborane (B
2H
6).Implantation dosage is 5 * 10
14-5 * 10
15Cm
-2, acceleration voltage is 50-90KeV.Thus, be formed for the N type impurity range 218 and 220 of N-TFT 228 and 230, and the p type impurity district 219 that is used for P-TFT 229.
Because the anodic oxide 214 of the gate side of two TFT (complementary TFT) 228 and 229 and 215 thickness are the 1200 Izod right sides, and the ion that imports scatters according to condition, so bias area X
1And X
3Width be about 1000 dusts.And, because the total thickness of anodic oxidation 212 and 217 is 6200 dusts, so the biasing width X of TFT230
2Be about 6000 dusts, shown in Fig. 8 E.
Then, the mixing acid that adopts phosphoric acid, acetate and nitric acid to form only corrodes porous anode layer 211 and 212.Erosion rate be 600 dusts/minute.Blocking type anodic oxide coating 213 and to 217 and silicon oxide film 205 all be not corroded.Then, with KrF excimer laser (wavelength 248nm, pulsewidth 20nsec) irradiation impurity range, activate the impurity that imports.
First and second leads are carved into the size and dimension of hope, shown in Fig. 9 C.
Referring to Fig. 8 F, adopt CVD on the whole surface of resulting structures, the silicon oxide film of thick 6000 dusts of deposit is as layer insulation 221.Form the thick ITO of 800 dusts (indium tin oxide) film by sputter, and be carved into pixel capacitors 222.Subsequently, by layer insulation 221 and gate insulating film 205 are carried out etching, form contact hole in source/drain region of TFT.Simultaneously, on grid and interconnection line,, form contact hole to layer insulation 221 and anodic oxide coating 213 to 217 etchings.At last, form aluminium conductor/electrode 223 to 226, afterwards in nitrogen atmosphere, under the 200-400 ℃ to resulting structures annealing, so that active layer hydrogenation.
Referring to Fig. 8 F, the source of the N channel TFT 228 of connect 223 leads 206 and complementary TFT couples together, and interconnection line 225 couples together the source of the P channel TFT 229 of complementary TFT and lead 209.And interconnection line 224 and 226 couples together the leakage of the output of complementary TFT (being the leakage of N raceway groove and P channel TFT) with TFT 230.In addition, interconnection line 227 couples together TFT 230 with pixel capacitors 222.Make the unicircuit that comprises TFT thus.
Because bias area is less, travelling speed is higher, so NTFT 228 and PTFT 229 are suitable for constituting cmos circuit, is used to form driving circuit, as phase shift resistor, CPU and storer.On the other hand, because bias area is bigger, leakage current is less.So NTFT 230 is fit to be used as pixel TFT, changes pixel capacitors.
As mentioned above, in order to control the anodic oxidation thickness, lead is divided into two portions.Yet,, also lead can be divided three parts or more parts for the anodized layer thickness that obtains to wish.
As mentioned above, in same container (chamber), carry out following institute in steps: microporous anodic oxidation, drying, clean substrate, stripping photoresist and blocking type anodic oxidation with pure water.That is, need not from container (chamber), to take out substrate, can finish a plurality of treatment steps.As can be seen, compare with traditional anodic oxidation equipment, the present invention has more effectively utilized the space.And, can also in same equipment,, carry out electrolytic corrosion by the used same procedure of anodic oxidation.
And, also can carry out known wet etching at same container and handle.In this situation, adopt needle drawing photoresist material etc., rotation platform and substrate, and apply etching reagent (promptly being applied on the turning axle of substrate) in substrate center.
Anodic oxidation solution flowing between negative electrode and on-chip and lead that the anode interconnect line is connected can be continuously or intermittently.
In the present embodiment, the centrifugal force that substrate rotation is produced scatters to anodised solution on the bell jar, and can not bring into substrate back (platform one side) and contact.This is another advantage of this example, because almost can avoid fully substrate back is corroded, this usually becomes a problem in traditional technology, because substrate is dipped into anodic oxidation solution (especially forming the used acid anodic oxidation solution of porous anode).
In addition, when handling continuously a plurality of substrate according to the present invention, on substrate, can be made into the uniform anode oxide film of thickness and quality,, promptly do not contain the impurity that the anode oxide treatment is produced in the anodic oxidation solution because it is always fresh to supply with the anodic oxidation solution of substrate.
In this example, the mobile anodic oxidation solution all is used as the waste liquid discharge between negative electrode and substrate.Yet, when using strainer etc. or after purifying with effluent purifying, recovery part capable of circulation or whole waste liquids.
Can be at random at cathode plane to the layout in the hole on the plane of substrate.Except the layout of Fig. 6 A to 6D, Fig. 7 A and 7B, also can be only at cathode plane to the rotation center place on the plane of substrate, a hole is set solution is flowed out.
Have, first and second nozzles 410 and 411 can make the hole that is located at negative electrode except supplying with anodic oxidation solution as an alternative, also supply with water, light carving rubber stripper etc. again.At this moment, after having used anodic oxidation solution (being used for two kinds of anodic oxidations of blocking type or microporous) or light carving rubber stripper, pure water etc. is flowed, thereby clean residual chemical substances in the sample hole.Substrate also obtains cleaning simultaneously.
Certainly, also can be by supplying with anodic oxidation solution with the irrelevant additional nozzle of negative electrode.
And, can change the configuration of platform, substrate, negative electrode etc., shown in Figure 11-13.
Referring to Figure 11, wire connector 404 and 405 is not to be provided with by negative electrode, and is arranged on platform one side.At this moment, the speed and the direction of negative electrode rotation can be set at and substrate and platform independence.For example, can make negative electrode static, simultaneously a rotary substrate and platform.But the structure of simplified apparatus thus.Also rotatable in addition negative electrode and fixed substrate, perhaps substrate and negative electrode are with each other with opposite direction rotation.
In addition, in case after wire connector is fixed in the joining region of substrate, just need not all mobile wire barrel when changing anodic oxidation solution at every turn.
And, as shown in figure 12, can treat being electrically connected between oxidation lead and anode interconnect line 406 and 407 at the back side of substrate.
Treat the lead of oxidation by extension, the joining region is set on substrate back of the body surface.At this moment, substrate upper surface does not have the anode interconnect line, and the anode interconnect line can undesirably disturb flowing of solution, thereby further improves the quality of film and the homogeneity of thickness.
Referring to Figure 13, can also on-chip lead is contacted with the anode interconnect line, so that anodic oxidation solution can flow to the outside in centre at the rotation center of substrate.By this structure, anodic oxidation solution is scattered by centrifugal force, but rotation center is not got wet by anodic oxidation solution yet.Therefore, need not to be provided with special structure, joining region and anodic oxidation solution between anode interconnect line and the substrate upper conductor are kept apart, can apply electric current expediently.
Above-mentioned configuration can equally with structure shown in Figure 12 improve the thickness of oxide film and the homogeneity of quality effectively, because under action of centrifugal force, anodic oxidation solution can spread in the clear.At this moment, negative electrode can be an immobilized, and wire connector of establishing in it and anode interconnect line can rotate.
In the structure of Figure 13, the joining region must be located at the substrate center position.Therefore, when processing was used for the substrate of active matrix liquid crystal demonstration, for example, when substrate finally will be separated into a plurality of substrate, this structure was specially adapted to anodic oxidation.On-chip joining region can be located at the outward flange of the finished product (substrate).
Embodiment 3
The anodic oxidation equipment that present embodiment relates to the plane formula technology type constitutes, and as shown in figure 14, a plurality of containers (chamber) of handling a plurality of substrates one by one is installed wherein.This example also relates to the technology of using this equipment, comprises that the unicircuit to containing just like TFT shown in the example 2 carries out anodic oxidation.In each technology described here, time length, temperature, chemical constitution, thickness and other condition are identical with example 2.
Figure 14 is according to this routine equipment synoptic diagram.Equipment 500 comprises: purge chamber 501, the anodised formation of microporous chamber 502, photoresist lift off chamber 503, the anodised formation of blocking type chamber 504, hot-plate 505, cooling plate 506 and mechanical arm 507.
Purge chamber 501 and photoresist lift off chamber 503 are equipped with bell jar respectively, and turner and the pure water or the therefrom effusive removable nozzle of photoresist lift off solution of band vacuum pad wherein is set.Remove outside first and second nozzles, anodic oxidation chamber 502 is identical with Figure 10 with all the other structures of 504.Independently delivery pipe all is equipped with in each chamber, so that can control the water or the chemical substance of discharging from the chamber, and it is mixed mutually.
A plurality of substrates 201 are housed in substrate box 508, and its structure is identical with Fig. 8 A and 9A.
From substrate box 508, take out substrate 201 one by one by mechanical arm 507, and according to carrying out the desired sequentially-fed of essential step to each chamber.Substrate is final returns substrate box 508.
Below explanation is according to the anode oxidation process of the 3rd embodiment.
Utilize mechanical arm 507 to take out substrate 201 from substrate box 508, at first be sent to hot-plate 505, there substrate is heated to 30 ℃, this is the next needed temperature of step that forms porous anode.
Then substrate 201 is sent to porous or anodised formation chamber 502.Only on second lead, carry out anodic oxidation, form the anode oxide film of microporous, identical with example 2.Finish after the anodic oxidation, remove on-chip anodic oxidation solution and make it dry by the high speed rotating platform.
Then substrate 201 is formed chamber 502 from the microporous anodic oxidation and deliver to purge chamber 501.Rotate the substrate that cleaned with pure water by turner simultaneously, remove the residual pure water of substrate surface by high speed rotating subsequently and make it dry.
Then, again substrate 201 is delivered to purge chamber 501 from photoresist lift off chamber 503.Clean substrate simultaneously with the turner rotation with pure water, and remove residual pure water, and make the substrate drying with the high speed rotating substrate.
Further dry substrate on hot-plate 505, and be sent to cooling plate 506, make substrate temperature reduce to the next required temperature of blocking type anodic oxidation step that forms.Substrate temperature is reduced to 10 ℃ in this step.
Subsequently substrate is sent into the anodised formation of blocking type chamber 504, on first and second leads, all form the blocking type anode oxide film.Finish after the anodic oxidation, remove anodic oxidation solution residual on the substrate, and make the substrate drying with the high speed rotating platform.
Then, substrate is formed chamber 504 from the blocking type anodic oxidation take out, send into purge chamber 501.Clean substrate with pure water, remove residual pure water and make the substrate drying simultaneously with the turner rotation, and with the high speed rotating substrate.
Further dry substrate 201 on hot-plate 505, and deliver to cooling plate 506 coolings.Gained substrate 201 deposits film magazine 508 in.
Finish anode oxidation process in this way.After having handled the substrate of pre-determined quantity, the whole replacement substrate of the new substrate box box 508 with the substrate that is untreated is housed repeats above-mentioned technology.Finish anodised substrate and further handle, constitute unicircuit by example 2 identical modes.
In this example, single substrate has been illustrated technical process.But, for batch process, can easily improve this routine technology, by technical process and the required time of considering each step, make them can be simultaneously at a plurality of substrates.Thus, handle a plurality of substrates one by one continuously, can at whole substrate with on all substrates, form thickness and quality and have excellent inhomogeneity anode oxide film to reach the mode of good control effectively.
Corrosion container (chamber) also can be set in the equipment of Figure 14.
Carry out time-consuming relatively anodic oxidation step by a plurality of chambers are set, can further save the time of whole technology.Because anodic oxidation equipment of the present invention does not use large-scale electrolyzer, so very compact structure can be provided.Can easily increase other unit and need not to take more space.
In the situation of batch processing, this often need reset condition.But in equipment of the present invention, each processing all is independently, therefore, even be combined into other unit in the technology, also need not to reset.
And, owing to substrate almost transmits under dry state, so need not to worry by other substrates of pollution such as water.In addition, but transmit the simple mechanical arm of substrate utilization structure.
Embodiment 4
Present embodiment relates to according to embodiments of the invention, makes the situation of transoid insulated gate TFT.Use equipment shown in Figure 13 that on-chip aluminium conductor is carried out anodic oxidation.Make the active matrix circuit of 640 * 480 matrixes, it has the insulated gate TFT that is provided with for each pixel.The used anodic oxidation equipment of this example is except structure shown in Figure 13, and rest part is identical with Figure 10 basically.
Pending substrate is of a size of 200mm * 200mm, and as the finished product, it will be divided into four substrates, and each is 100mm * 100mm.
Referring to Figure 15 A-15D, below the technology of insulated gate TFT is made in explanation on glass substrate.Although showed a TFT among the figure, the coupled pixel capacitors of this TFT constitutes a pair of, is formed on the substrate as a global matrix.
By sputter, on Corning 7059 glass substrates 701, deposition silicon nitride film is as basement membrane 702, and thickness is the 1000-3000 dust, for example 2000 dusts.Can replace silicon nitride by the sputtering deposit silicon oxide film in oxygen atmosphere, thickness is roughly the same.In addition, also can adopt TEOS to come deposit by plasma CVD.
Deposited by electron beam evaporation or sputter afterwards, the aluminium film of thick 1000 dusts-2 of deposit μ m, for example 2800 dusts (containing 1wt% silicon or 0.1-0.3wt% scandium).
Adopt the mixing solutions of phosphoric acid, nitric acid and acetate, in wet processing, gained aluminium film is carried out photoetching.Make gate electrode part 703 (Figure 15 A) thus with step profile
Aluminium film needle drawing 801 on substrate 701, as shown in figure 16.In 703 needle drawings of gate electrode part simultaneously, roughly the central part at substrate 701 forms joining region 802, and wherein first anode interconnection line 406 and wire connector 404 are formed and interconnect, as shown in figure 13.The joining region is electrically connected with other all gate electrode part 703 on the substrate 701.
Employing has the equipment of structure shown in Figure 13, by above-mentioned identical mode, gate electrode part 703 is carried out anodic oxidation.Referring to Figure 13, the substrate 701 that is transmitted by mechanical arm places on the platform 401, and is fixed thereon with vacuum pad.Platform 401 is arranged to rotatable, so that so-called turner to be provided.
The bell jar 400 that is arranged under the upper surface of platform 401 shown in Figure 13 returns the figure position.Negative electrode 402 descends from the top, and the wire connector of being located within the negative electrode 402 404 is fixed in the joining region that is arranged on substrate 701 central parts.
The used wire connector 404 of this example can have any structure shown in Fig. 5 A-5C.
Platform is connected with motor and is rotatable.The negative electrode 402 that is fixed on substrate 201 is with platform 401 rotations.Another motor can be loaded on negative electrode 402.
Even when negative electrode rotates, adopt brush connection etc., also can guarantee being electrically connected between direct supply and first and second anode interconnect 406.
Afterwards, with 100-500 rev/min, 200 rev/mins speed for example, rotation platform 401 and substrate 201, negative electrode 402 are supplied with anodic oxidation solutions 408 by the hole 403 that is located on the negative electrode 402 simultaneously.Anodic oxidation solution adopts 1,2 ethylene glycol solution, wherein is dissolved with concentration and is 3% tartrate, and is neutralized to pH with ammoniacal liquor and is about 7.The temperature of anodic oxidation solution 408 is controlled at below 10 ℃, just obtains better oxide film.
The flow of anodic oxidation solution 408 should be enough to be full of the space between substrate and the negative electrode.Owing to rotations such as platform produce centrifugal force, anodic oxidation solution looses to bell jar 400 from substrate and cathode-side.The anodic oxidation solution of being collected by bell jar flow to the downside of bell jar 400 downwards by discharge outlet 409, and passes through the delivery pipe device for transferring.Preferably dissimilar according to the used liquid of technology are provided with different blowdown systems.
Connecting at the aluminium on the substrate 701 applies electric current between figure 801 and the negative electrode 402, thus the starting cathode oxidation.Apply steady current, be specially 0.5mA/cm in this example
2Current density, reach 120V up to voltage.120 volts voltage kept 1-60 minute, for example 10 minutes.After the rotation that stops platform 401 and negative electrode 402, and stop to pull up wire connector 404 and negative electrode 402 after anodic oxidation solution flows.
Thus, on plane on the second gate electrode part 703 and gate electrode 704 sides, cover blocking type anodic alumina films 705, thickness is 1600 dusts.
Then, once more rotation platform 401 and 701 30 seconds of substrate, rotating speed is 2500-4000 rev/min, is specially 3000 rev/mins in this example, removes anodic oxidation solution residual on the substrate, and makes substrate 701 dryings.
Be further rotated platform 401 and the substrate 701 on it, rotating speed is 100-1000 rev/min, for example 300 rev/mins, moves first nozzle 410 simultaneously, and makes pure water run underneath to the central part of rotary substrate 701.Clean the last plane of substrate in this way.
Rotation stopped to flow of pure water after 2 minutes continuously, and first nozzle 410 returns its original position.Platform 401 and substrate 701 rotated 30 seconds once more, and rotating speed is 2500-4000 rev/min, for example 3000 rev/mins, removed pure water residual on the substrate, and made substrate 701 dryings.Pure water is expelled to the bottom of bell jar 400 by discharge outlet 409, and by belonging to and the different tubing system disposal facilities of the above-mentioned anodic oxidation solution system for use in carrying of discharging.
Finish the anodic oxidation step in the above described manner.After bell jar 400 is moved down, utilize mechanical arm etc. substrate 701 to be delivered to the equipment of next step.On platform, place next substrate, can carry out anodic oxidation continuously to a series of substrates thus.
Not only anodic oxidation step, and cleaning step also can make pure water flow out from the hole 403 of being located at negative electrode to carry out.And, can when staying the position of joining region of substrate, wire connector carry out anodic oxidation, cleaning and drying and other steps.
Thus, form the gate insulating film 705 (Figure 15 B) that the aluminiferous canopy utmost point 704 and anode oxide film are made.
In air, 200-300 ℃ temperature, for example under 200 ℃, to dozens of minutes, help one of the leakage circuit of anode oxide film reduction more than the order of magnitude to resulting structures heating several minutes.
Then, using blending ratio is 1: 3-1: 8 for example 1: 5 silane and the mixtures of ammonia, as second gate insulating film 706, thickness is the 1000-3000 dust, for example 2000 dusts by the plasma CVD deposition silicon nitride film.
Can form the silicon oxide film that thickness is the 1000-3000 dust, replace forming silicon nitride film.When the silicon oxide deposition film, sputter or plasma CVD all can use.Can adopt TEOS with oxygen as starting materials, carry out plasma CVD, original gas applied the RF energy carry out thermolysis, and make temperature remain on 150-400 ℃, be preferably in silicon oxide deposition on 200-250 ℃ the substrate.TEOS and oxygen are by 1: 1-1: 10 pressure mixed, and total pressure is the 0.05-0.5 torr, the RF power that adds 100-250W carries out the RF discharge.In addition, can adopt TEOS and combined with ozone, by decompression CVD or atmospheric pressure cvd, form silicon oxide film, heated substrate is to 150-400 ℃, preferably to 200-250 ° simultaneously.
Can omit gate insulating film 706.Yet, second insulation 706 is set, can suppress the short circuit between the electrode, and improve the mutual conductance of TFT.
Then, deposit I-type amorphous silicon film 707 on gate insulating film 706, thickness is the 200-2000 dust, for example 1000 dusts provide channel region with this.
Further deposition silicon nitride film thereon, thickness is the 500-3000 dust, for example 1000 dusts.Employing is by the water-reducible hydrofluoric acid of purifying, concentration be the ratio of HF/ water at 1/10-1/50, the formed silicon nitride film of etching provides protective membrane 708 with this.
Adopt plasma CVD deposit phosphorated n thereon
+ Amorphous silicon film 709, thickness are the 200-1000 dust, for example 300 dusts (Figure 15 C).
Adopt after the dry etching, I type amorphous silicon film 707 and n
+ Amorphous silicon film 709 carries out needle drawing.And, form ITO film and needle drawing again and constitute the pixel capacitors (not shown).By electron beam evaporation or sputter, form thick 1000 dusts-2 μ m thereon, as the aluminium film of 3000 dusts.Utilize dry etching, aluminium film and the n below it
+The silicon fiml needle drawing forms source electrode 710, drain electrode 711 and source region, drain region.Thus, make TFT (Figure 15 D).
The active matrix circuit of making thus is used to have the liquid crystal electro-optical of excellent properties.
In this example, substrate is divided into four parts.Yet embodiments of the invention can be used for substrate and are divided into situation more than six parts, as long as on-chip lead can partly be connected in substrate center with the anode interconnect line.
As mentioned above, mainly be to the structure of treatment substrate one by one to explanation of the present invention.Yet, certainly in single container or electrolyzer, handle many substrates simultaneously.
And, explanation of the present invention has been related generally to the situation of using glass substrate.But, also can use other substrate such as quartz substrate, silicon wafer or metal substrate, and need not to consider to be conductor or isolator.For the size of substrate, no particular restriction such as thickness.
According to structure of the present invention, a surface of substrate can be isolated with anodic oxidation solution.Therefore, when substrate is made by the anodised metal of himself easy generation, for example use aluminium or copper, when perhaps substrate of Cai Yonging or material are easy to by the oxidation of anodic oxidation solution institute, can only make the surperficial anodic oxidation of Butut, keep other surface not oxidized simultaneously.
Above-mentioned explanation relates generally to the use direct supply.But, can use the AC power that contains flip-flop equally.
More than explanation of the present invention is related to the aluminum oxide (Al of gained behind aluminium (Al) and the alumilite process particularly
2O
2).But the present invention is not limited to this, for example and can be used for as tantalum (Ta) and tantalum oxide (Ta
2O
3), titanium (Ti) and titanium oxide (TiO
2), silicon (Si) and silicon oxide (SiO
2), and their multilayer film.
It is apparent to those skilled in the art that and under condition without departing from the spirit or scope of the invention, can make various changes and modifications.
Claims (17)
1. one kind is carried out anodised equipment, comprising:
Be used to clamp the support unit of substrate;
The lead that forms on this substrate, this lead be by can constituting by anodised material,
The anode that is electrically connected with described lead;
Face the negative electrode of described substrate by the gap between negative electrode and the described substrate;
Between described anode and described negative electrode, apply the power supply of voltage, wherein with this lead as anode;
Be used for during applying described voltage, make mobile device in electrolytic solution this gap between described negative electrode and described substrate.
2. one kind is carried out anodised equipment, comprising:
Be used to clamp the support unit of substrate;
The lead that forms on this substrate, this lead be by can constituting by anodised material,
The anode that is electrically connected with described lead;
Face the negative electrode of described substrate by the gap between negative electrode and the described substrate;
Between described anode and negative electrode, apply the power supply of voltage, wherein with this lead as anode;
Make mobile device in electrolytic solution this gap between described negative electrode and described substrate;
Wherein said support unit is equipped with the device of the described substrate of rotation.
3. one kind is carried out anodised equipment, comprising:
Be used to clamp the support unit of substrate;
The lead that forms on this substrate, this lead be by can constituting by anodised material,
The anode that is electrically connected with described lead;
Face the negative electrode of described substrate by the gap between negative electrode and the described substrate;
Between described anode and negative electrode, apply the power supply of voltage, wherein with this lead as anode;
Wherein said negative electrode is equipped with and is used for during applying described voltage, makes mobile device in electrolytic solution this gap between described negative electrode and described substrate.
4. according to the equipment of claim 3, it is characterized in that described support unit is equipped with the device of the described substrate of rotation.
5. according to the equipment of claim 3, it is characterized in that the described device that makes electrolyte flow, described electrolytic solution in accordance with regulations direction on described substrate is flowed.
6. one kind is carried out anodised equipment, comprising:
One has last planar anchor clamps, with the substrate folder thereon,
The lead that forms on this substrate, this lead be by can constituting by anodised material,
Negative electrode, this negative electrode is relative with the described plane of going up of anchor clamps with described gap of going up between the plane by described negative electrode;
Be used for electrolytic solution is imported the device in the gap between described negative electrode and the described anchor clamps;
With the anode that is connected as the described lead of anodic;
Between described negative electrode and anode, apply the power supply of voltage, wherein with this lead as anode;
The wherein said planar horizontal ground of going up is provided with.
7. according to the equipment of claim 6, also comprise the device that makes at least one rotation in described anchor clamps and the described negative electrode.
8. according to the equipment of claim 6, it is characterized in that described anode is connected with the lower surface of described substrate, this substrate lower surface is facing to described anchor clamps.
9. equipment according to Claim 8 is characterized in that described anode is electrically connected at the central part and the described lead of described substrate.
10. according to the equipment of claim 6, it is characterized in that described anode extends by described negative electrode, and be electrically connected at described on-chip described lead.
11., it is characterized in that described anchor clamps and described negative electrode rotate with respect to same turning axle according to the equipment of claim 6.
12., it is characterized in that described anode extends by described negative electrode, and be electrically connected at described turning axle place and described on-chip lead according to the equipment of claim 11.
13. one kind is carried out anodised equipment, comprising:
The last planar anchor clamps that have the clamping substrate to use, described anchor clamps are rotatable;
The lead that forms on this substrate, this lead be by can constituting by anodised material,
Negative electrode with described negative electrode with described to go up gap between the plane relative with the last plane of described anchor clamps and put;
Be used for electrolytic solution is imported the device in the gap between described negative electrode and the described anchor clamps;
The anode that is connected with described lead;
Between described negative electrode and anode, apply the power supply of voltage, wherein with this lead as anode;
At least one nozzle is used for liquid-conducting to the upper surface that is positioned at the described substrate on the described anchor clamps.
14. one kind is carried out anodised equipment, comprising:
Support unit, its clamping substrate, described substrate have first and second leads thereon at least, the described first and second lead electrically insulated from one another;
The first anode is connected with described first lead, and applies first voltage;
Second anode is connected with described second lead, and applies second voltage, and the described second anode and the described first anode are isolated mutually;
Applied the negative electrode of tertiary voltage, corresponding with described first and second anodes; Described negative electrode is faced described substrate by the gap between described negative electrode and the described substrate, and
Be used for during applying described voltage, make mobile device in electrolytic solution this gap between described negative electrode and described substrate,
Wherein said first and second voltages can be controlled independently of each other.
15. one kind is carried out anode oxidation method with the equipment of claim 1-14 described in each, may further comprise the steps:
Preparation has the substrate for the treatment of the oxidation lead;
With the described oxidation lead for the treatment of negative electrode is set with being separated by certain interval, described gap is the gap between negative electrode and the described lead;
As anode, between described lead and described anode, apply voltage with described lead,
Import described gap between described lead and the described negative electrode carrying out anodised electrolytic solution, during described voltage applies, the continuous flow in described gap of described electrolytic solution.
16. semiconductor device, it contains the lead of the equipment of claim 1-3,6,13 and 14 described in each, and wherein said lead is as the gate electrode of TFT.
17. semiconductor device, it contains the lead of the equipment of claim 1-3,6,13 and 14 described in each,
Wherein said lead is used as described on-chip gate electrode,
Wherein on described lead, form anode oxide film,
Wherein on described anode oxide film, form insulating film and
Wherein on described insulating film, form silicon fiml.
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|---|---|---|---|
| JP74023/94 | 1994-03-17 | ||
| JP07402394A JP3217586B2 (en) | 1994-03-17 | 1994-03-17 | Anodizing apparatus and anodizing method |
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| CN1124304A CN1124304A (en) | 1996-06-12 |
| CN1309876C true CN1309876C (en) | 2007-04-11 |
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| CN101942687A (en) * | 2010-09-26 | 2011-01-12 | 西华大学 | Hard anodizing method of top surface of piston |
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|---|---|---|---|---|
| JP2006058559A (en) * | 2004-08-19 | 2006-03-02 | Bridgestone Corp | Image display panel and its manufacturing method |
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| JP2020105590A (en) | 2018-12-27 | 2020-07-09 | キオクシア株式会社 | Substrate processing apparatus and substrate processing method |
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| JPS5272338A (en) * | 1975-12-15 | 1977-06-16 | Uemura Kogyo Kk | Method of increasing efficiency of anodizing process |
| US4118303A (en) * | 1976-08-30 | 1978-10-03 | Burroughs Corporation | Apparatus for chemically treating a single side of a workpiece |
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- 1995-03-09 TW TW084102244A patent/TW354854B/en not_active IP Right Cessation
- 1995-03-17 CN CNB95104060XA patent/CN1309876C/en not_active Expired - Fee Related
- 1995-03-17 KR KR1019950005581A patent/KR950034597A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5272338A (en) * | 1975-12-15 | 1977-06-16 | Uemura Kogyo Kk | Method of increasing efficiency of anodizing process |
| US4118303A (en) * | 1976-08-30 | 1978-10-03 | Burroughs Corporation | Apparatus for chemically treating a single side of a workpiece |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101942687A (en) * | 2010-09-26 | 2011-01-12 | 西华大学 | Hard anodizing method of top surface of piston |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950034597A (en) | 1995-12-28 |
| CN1124304A (en) | 1996-06-12 |
| JP3217586B2 (en) | 2001-10-09 |
| JPH07263437A (en) | 1995-10-13 |
| TW354854B (en) | 1999-03-21 |
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