JP3217586B2 - 陽極酸化装置及び陽極酸化方法 - Google Patents

陽極酸化装置及び陽極酸化方法

Info

Publication number
JP3217586B2
JP3217586B2 JP07402394A JP7402394A JP3217586B2 JP 3217586 B2 JP3217586 B2 JP 3217586B2 JP 07402394 A JP07402394 A JP 07402394A JP 7402394 A JP7402394 A JP 7402394A JP 3217586 B2 JP3217586 B2 JP 3217586B2
Authority
JP
Japan
Prior art keywords
substrate
cathode electrode
stage
anodizing
film metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP07402394A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07263437A (ja
Inventor
利光 小沼
彰 菅原
由起子 上原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP07402394A priority Critical patent/JP3217586B2/ja
Priority to TW084102244A priority patent/TW354854B/zh
Priority to CNB95104060XA priority patent/CN1309876C/zh
Priority to KR1019950005581A priority patent/KR950034597A/ko
Publication of JPH07263437A publication Critical patent/JPH07263437A/ja
Application granted granted Critical
Publication of JP3217586B2 publication Critical patent/JP3217586B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP07402394A 1994-03-17 1994-03-17 陽極酸化装置及び陽極酸化方法 Expired - Fee Related JP3217586B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP07402394A JP3217586B2 (ja) 1994-03-17 1994-03-17 陽極酸化装置及び陽極酸化方法
TW084102244A TW354854B (en) 1994-03-17 1995-03-09 Apparatus and method for anodic oxidation
CNB95104060XA CN1309876C (zh) 1994-03-17 1995-03-17 用于阳极氧化的设备及方法
KR1019950005581A KR950034597A (ko) 1994-03-17 1995-03-17 양극산화용 장치 및 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07402394A JP3217586B2 (ja) 1994-03-17 1994-03-17 陽極酸化装置及び陽極酸化方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2001049710A Division JP3480840B2 (ja) 2001-02-26 2001-02-26 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH07263437A JPH07263437A (ja) 1995-10-13
JP3217586B2 true JP3217586B2 (ja) 2001-10-09

Family

ID=13535118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP07402394A Expired - Fee Related JP3217586B2 (ja) 1994-03-17 1994-03-17 陽極酸化装置及び陽極酸化方法

Country Status (4)

Country Link
JP (1) JP3217586B2 (ko)
KR (1) KR950034597A (ko)
CN (1) CN1309876C (ko)
TW (1) TW354854B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101498241B1 (ko) * 2013-09-17 2015-03-05 신태호 인공치아 보철의 표면 처리장치
US11211267B2 (en) 2018-12-27 2021-12-28 Toshiba Memory Corporation Substrate processing apparatus and substrate processing method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006058559A (ja) * 2004-08-19 2006-03-02 Bridgestone Corp 画像表示用パネル及びその製造方法
KR100851204B1 (ko) * 2006-11-09 2008-08-07 금오공과대학교 산학협력단 양극 산화 장치
CN101280447B (zh) * 2007-04-07 2011-03-09 山东滨州渤海活塞股份有限公司 铝活塞环槽自动硬质阳极氧化装置
CN101942687A (zh) * 2010-09-26 2011-01-12 西华大学 活塞顶面硬质阳极氧化方法
TWI449812B (zh) * 2011-08-10 2014-08-21 Chenming Mold Ind Corp 漸層陽極表面處理方法
CN103590084B (zh) * 2012-08-16 2018-08-17 盛美半导体设备（上海）有限公司 一种快速制备纳米结构阵列的装置及方法
JP5754520B2 (ja) * 2013-01-22 2015-07-29 秋田県 電界洗浄方法、電界免疫組織染色方法、電界洗浄装置及び、電界免疫組織染色装置
CN104934481B (zh) * 2014-03-21 2017-10-13 北京大学深圳研究生院 一种薄膜晶体管及其制备方法
CN105543927B (zh) * 2015-12-23 2018-05-04 广东长盈精密技术有限公司 阳极氧化系统
CN105671623B (zh) * 2016-04-02 2017-12-05 西南石油大学 一种吸盘式微弧氧化夹具
CN105646876B (zh) 2016-04-08 2018-06-19 南京工业大学 一种有机催化制备聚酯酰胺的方法
TWI631238B (zh) * 2017-06-23 2018-08-01 五環貿易有限公司 Processing method for progressive dyeing of workpiece surface
CN114717627B (zh) * 2021-01-04 2024-04-19 善统工业股份有限公司 用于金属物件阳极处理的治具
CN115125599B (zh) * 2021-08-03 2023-09-12 天津科技大学 一种制备多孔阳极氧化铝膜的装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825759B2 (ja) * 1975-12-15 1983-05-30 ウエムラコウギヨウ カブシキガイシヤ ヨウキサクサンカノコウノウリツカホウホウ
US4118303A (en) * 1976-08-30 1978-10-03 Burroughs Corporation Apparatus for chemically treating a single side of a workpiece

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101498241B1 (ko) * 2013-09-17 2015-03-05 신태호 인공치아 보철의 표면 처리장치
US11211267B2 (en) 2018-12-27 2021-12-28 Toshiba Memory Corporation Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
TW354854B (en) 1999-03-21
CN1124304A (zh) 1996-06-12
CN1309876C (zh) 2007-04-11
JPH07263437A (ja) 1995-10-13
KR950034597A (ko) 1995-12-28

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