TW354854B - Apparatus and method for anodic oxidation - Google Patents

Apparatus and method for anodic oxidation

Info

Publication number
TW354854B
TW354854B TW084102244A TW84102244A TW354854B TW 354854 B TW354854 B TW 354854B TW 084102244 A TW084102244 A TW 084102244A TW 84102244 A TW84102244 A TW 84102244A TW 354854 B TW354854 B TW 354854B
Authority
TW
Taiwan
Prior art keywords
anodic oxidation
electrode
gap
voltage
electrolyte
Prior art date
Application number
TW084102244A
Other languages
English (en)
Inventor
Toshimitsu Konuma
Akira Sugawara
Yukiko Kamihara
Original Assignee
Semiconudctor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconudctor Energy Lab Co Ltd filed Critical Semiconudctor Energy Lab Co Ltd
Application granted granted Critical
Publication of TW354854B publication Critical patent/TW354854B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
TW084102244A 1994-03-17 1995-03-09 Apparatus and method for anodic oxidation TW354854B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07402394A JP3217586B2 (ja) 1994-03-17 1994-03-17 陽極酸化装置及び陽極酸化方法

Publications (1)

Publication Number Publication Date
TW354854B true TW354854B (en) 1999-03-21

Family

ID=13535118

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102244A TW354854B (en) 1994-03-17 1995-03-09 Apparatus and method for anodic oxidation

Country Status (4)

Country Link
JP (1) JP3217586B2 (zh)
KR (1) KR950034597A (zh)
CN (1) CN1309876C (zh)
TW (1) TW354854B (zh)

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JP2006058559A (ja) * 2004-08-19 2006-03-02 Bridgestone Corp 画像表示用パネル及びその製造方法
KR100851204B1 (ko) * 2006-11-09 2008-08-07 금오공과대학교 산학협력단 양극 산화 장치
CN101280447B (zh) * 2007-04-07 2011-03-09 山东滨州渤海活塞股份有限公司 铝活塞环槽自动硬质阳极氧化装置
CN101942687A (zh) * 2010-09-26 2011-01-12 西华大学 活塞顶面硬质阳极氧化方法
TWI449812B (zh) * 2011-08-10 2014-08-21 Chenming Mold Ind Corp 漸層陽極表面處理方法
CN103590084B (zh) * 2012-08-16 2018-08-17 盛美半导体设备（上海）有限公司 一种快速制备纳米结构阵列的装置及方法
JP5754520B2 (ja) * 2013-01-22 2015-07-29 秋田県 電界洗浄方法、電界免疫組織染色方法、電界洗浄装置及び、電界免疫組織染色装置
KR101498241B1 (ko) * 2013-09-17 2015-03-05 신태호 인공치아 보철의 표면 처리장치
CN104934481B (zh) * 2014-03-21 2017-10-13 北京大学深圳研究生院 一种薄膜晶体管及其制备方法
CN105543927B (zh) * 2015-12-23 2018-05-04 广东长盈精密技术有限公司 阳极氧化系统
CN105671623B (zh) * 2016-04-02 2017-12-05 西南石油大学 一种吸盘式微弧氧化夹具
CN105646876B (zh) 2016-04-08 2018-06-19 南京工业大学 一种有机催化制备聚酯酰胺的方法
TWI631238B (zh) * 2017-06-23 2018-08-01 五環貿易有限公司 Processing method for progressive dyeing of workpiece surface
JP2020105590A (ja) 2018-12-27 2020-07-09 キオクシア株式会社 基板処理装置および基板処理方法
CN114717627B (zh) * 2021-01-04 2024-04-19 善统工业股份有限公司 用于金属物件阳极处理的治具
CN115125599B (zh) * 2021-08-03 2023-09-12 天津科技大学 一种制备多孔阳极氧化铝膜的装置
CN117819581A (zh) * 2023-08-14 2024-04-05 滨州学院 一种自润滑耐磨复合涂层用粉末的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825759B2 (ja) * 1975-12-15 1983-05-30 ウエムラコウギヨウ カブシキガイシヤ ヨウキサクサンカノコウノウリツカホウホウ
US4118303A (en) * 1976-08-30 1978-10-03 Burroughs Corporation Apparatus for chemically treating a single side of a workpiece

Also Published As

Publication number Publication date
CN1309876C (zh) 2007-04-11
KR950034597A (ko) 1995-12-28
JPH07263437A (ja) 1995-10-13
JP3217586B2 (ja) 2001-10-09
CN1124304A (zh) 1996-06-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees