CN1303129A - 处延双极器件和互补金属氧化物半导体器件的方法 - Google Patents
处延双极器件和互补金属氧化物半导体器件的方法 Download PDFInfo
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- CN1303129A CN1303129A CN00130926A CN00130926A CN1303129A CN 1303129 A CN1303129 A CN 1303129A CN 00130926 A CN00130926 A CN 00130926A CN 00130926 A CN00130926 A CN 00130926A CN 1303129 A CN1303129 A CN 1303129A
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- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- 239000011241 protective layer Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 5
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- 239000010703 silicon Substances 0.000 claims description 3
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
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- 239000003989 dielectric material Substances 0.000 claims 1
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- 238000002955 isolation Methods 0.000 description 4
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- 230000009977 dual effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/439,067 | 1999-11-12 | ||
US09/439,067 US6448124B1 (en) | 1999-11-12 | 1999-11-12 | Method for epitaxial bipolar BiCMOS |
US09/439067 | 1999-11-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1303129A true CN1303129A (zh) | 2001-07-11 |
CN1157780C CN1157780C (zh) | 2004-07-14 |
Family
ID=23743156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001309269A Expired - Fee Related CN1157780C (zh) | 1999-11-12 | 2000-11-08 | 制造外延双极器件和互补金属氧化物半导体器件的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6448124B1 (zh) |
JP (1) | JP3516916B2 (zh) |
KR (1) | KR100352079B1 (zh) |
CN (1) | CN1157780C (zh) |
GB (1) | GB2362508B (zh) |
IL (1) | IL138134A (zh) |
MY (1) | MY124964A (zh) |
TW (1) | TW516204B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101335236B (zh) * | 2007-12-28 | 2011-07-06 | 上海新傲科技股份有限公司 | 利用桶式外延炉进行bicmos电路的埋层外延方法 |
CN102723330A (zh) * | 2012-07-16 | 2012-10-10 | 西安电子科技大学 | 一种应变Si BiCMOS集成器件及制备方法 |
CN102820332A (zh) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
CN109494193A (zh) * | 2017-09-13 | 2019-03-19 | 英飞凌科技股份有限公司 | 一种用于制造组合半导体器件的方法 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2811473B1 (fr) * | 2000-07-04 | 2003-09-05 | St Microelectronics Sa | Procede de realisation de regions isolantes profondes et peu profondes d'un circuit integre, et circuit integre correspondant |
US6667226B2 (en) * | 2000-12-22 | 2003-12-23 | Texas Instruments Incorporated | Method and system for integrating shallow trench and deep trench isolation structures in a semiconductor device |
US7521733B2 (en) | 2002-05-14 | 2009-04-21 | Infineon Technologies Ag | Method for manufacturing an integrated circuit and integrated circuit with a bipolar transistor and a hetero bipolar transistor |
DE10221416A1 (de) * | 2002-05-14 | 2003-11-27 | Infineon Technologies Ag | Verfahren zum Herstellen einer integrierten Schaltung und integrierte Schaltung mit einem Bipolartransistor und einem Heterobipolartransistor |
US6943426B2 (en) | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
US7834421B2 (en) | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
US7667268B2 (en) | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US7812403B2 (en) | 2002-08-14 | 2010-10-12 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuit devices |
US7956391B2 (en) | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US8513087B2 (en) | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
US8089129B2 (en) | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US7902630B2 (en) | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US7939420B2 (en) | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
US6630377B1 (en) * | 2002-09-18 | 2003-10-07 | Chartered Semiconductor Manufacturing Ltd. | Method for making high-gain vertical bipolar junction transistor structures compatible with CMOS process |
US6780694B2 (en) * | 2003-01-08 | 2004-08-24 | International Business Machines Corporation | MOS transistor |
KR100486304B1 (ko) | 2003-02-07 | 2005-04-29 | 삼성전자주식회사 | 자기정렬을 이용한 바이씨모스 제조방법 |
US6864151B2 (en) * | 2003-07-09 | 2005-03-08 | Infineon Technologies Ag | Method of forming shallow trench isolation using deep trench isolation |
DE102004004942A1 (de) * | 2004-01-31 | 2005-08-18 | X-Fab Semiconductor Foundries Ag | Passivierung isolierender Trenngräben von integrierten Schaltungen |
US7329941B2 (en) * | 2004-07-20 | 2008-02-12 | International Business Machines Corporation | Creating increased mobility in a bipolar device |
US7265018B2 (en) * | 2004-09-21 | 2007-09-04 | International Business Machines Corporation | Method to build self-aligned NPN in advanced BiCMOS technology |
JP2007129085A (ja) * | 2005-11-04 | 2007-05-24 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
US20080026545A1 (en) * | 2006-07-28 | 2008-01-31 | Paul Cooke | Integrated devices on a common compound semiconductor III-V wafer |
ATE532211T1 (de) * | 2006-08-31 | 2011-11-15 | Nxp Bv | Verfahren zur herstellung eines bipolaren transistors |
KR100867977B1 (ko) | 2006-10-11 | 2008-11-10 | 한국과학기술원 | 인도시아닌 그린 혈중 농도 역학을 이용한 조직 관류 분석장치 및 그를 이용한 조직 관류 분석방법 |
US7709338B2 (en) * | 2006-12-21 | 2010-05-04 | International Business Machines Corporation | BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices |
US7795681B2 (en) | 2007-03-28 | 2010-09-14 | Advanced Analogic Technologies, Inc. | Isolated lateral MOSFET in epi-less substrate |
US7737526B2 (en) * | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
DE202013105006U1 (de) * | 2013-11-07 | 2015-02-10 | Wittur Holding Gmbh | Aufzug mit Rohrmotor und geteilter Motorhalterung |
CN105390496B (zh) * | 2014-09-05 | 2018-08-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法和电子装置 |
US10243047B2 (en) * | 2016-12-08 | 2019-03-26 | Globalfoundries Inc. | Active and passive components with deep trench isolation structures |
RU174127U1 (ru) * | 2017-03-17 | 2017-10-03 | Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | Кремниевый планарный транзистор |
US10698156B2 (en) | 2017-04-27 | 2020-06-30 | The Research Foundation For The State University Of New York | Wafer scale bonded active photonics interposer |
Family Cites Families (20)
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US5340762A (en) | 1985-04-01 | 1994-08-23 | Fairchild Semiconductor Corporation | Method of making small contactless RAM cell |
US4922318A (en) | 1985-09-18 | 1990-05-01 | Advanced Micro Devices, Inc. | Bipolar and MOS devices fabricated on same integrated circuit substrate |
US4752589A (en) * | 1985-12-17 | 1988-06-21 | Siemens Aktiengesellschaft | Process for the production of bipolar transistors and complementary MOS transistors on a common silicon substrate |
US5023193A (en) | 1986-07-16 | 1991-06-11 | National Semiconductor Corp. | Method for simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks |
EP0325181B1 (en) * | 1988-01-19 | 1995-04-05 | National Semiconductor Corporation | A method of manufacturing a polysilicon emitter and a polysilicon gate using the same etch of polysilicon on a thin gate oxide |
JPH0348459A (ja) | 1989-04-26 | 1991-03-01 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JPH0349234A (ja) | 1989-07-17 | 1991-03-04 | Fujitsu Ltd | 半導体装置の製造方法 |
DE69133446T2 (de) * | 1990-11-14 | 2006-02-09 | Samsung Semiconductor, Inc., San Jose | BiCMOS-Verfahren mit Bipolartransistor mit geringem Basis-Rekombinationsstrom |
JP2740087B2 (ja) | 1992-08-15 | 1998-04-15 | 株式会社東芝 | 半導体集積回路装置の製造方法 |
US5342794A (en) | 1992-09-10 | 1994-08-30 | Vlsi Technology, Inc. | Method for forming laterally graded deposit-type emitter for bipolar transistor |
US5374569A (en) | 1992-09-21 | 1994-12-20 | Siliconix Incorporated | Method for forming a BiCDMOS |
US5557131A (en) | 1992-10-19 | 1996-09-17 | At&T Global Information Solutions Company | Elevated emitter for double poly BICMOS devices |
US5439833A (en) | 1994-03-15 | 1995-08-08 | National Semiconductor Corp. | Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance |
US5583059A (en) | 1994-06-01 | 1996-12-10 | International Business Machines Corporation | Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
JPH07335773A (ja) | 1994-06-10 | 1995-12-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP3444002B2 (ja) | 1995-02-14 | 2003-09-08 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP3329640B2 (ja) | 1995-10-10 | 2002-09-30 | 株式会社東芝 | 半導体装置の製造方法 |
US5843814A (en) | 1996-02-15 | 1998-12-01 | Micron Technology, Inc. | Method of forming BiCMOS circuitry |
JP3919885B2 (ja) * | 1997-06-18 | 2007-05-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US5766990A (en) | 1997-08-08 | 1998-06-16 | National Semiconductor Corporation | Method of manufacturing a high speed bipolar transistor in a CMOS process |
-
1999
- 1999-11-12 US US09/439,067 patent/US6448124B1/en not_active Expired - Fee Related
-
2000
- 2000-08-15 TW TW089116474A patent/TW516204B/zh not_active IP Right Cessation
- 2000-08-28 IL IL13813400A patent/IL138134A/xx not_active IP Right Cessation
- 2000-10-18 MY MYPI20004901A patent/MY124964A/en unknown
- 2000-11-07 KR KR1020000065750A patent/KR100352079B1/ko not_active IP Right Cessation
- 2000-11-07 GB GB0027232A patent/GB2362508B/en not_active Expired - Fee Related
- 2000-11-08 JP JP2000340616A patent/JP3516916B2/ja not_active Expired - Fee Related
- 2000-11-08 CN CNB001309269A patent/CN1157780C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101335236B (zh) * | 2007-12-28 | 2011-07-06 | 上海新傲科技股份有限公司 | 利用桶式外延炉进行bicmos电路的埋层外延方法 |
CN102820332A (zh) * | 2011-06-08 | 2012-12-12 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
CN102820332B (zh) * | 2011-06-08 | 2016-04-27 | 无锡华润上华半导体有限公司 | 与mos管集成的垂直型双极结型晶体管及其制备方法 |
CN102723330A (zh) * | 2012-07-16 | 2012-10-10 | 西安电子科技大学 | 一种应变Si BiCMOS集成器件及制备方法 |
CN102723330B (zh) * | 2012-07-16 | 2015-12-09 | 西安电子科技大学 | 一种应变Si BiCMOS集成器件及制备方法 |
CN109494193A (zh) * | 2017-09-13 | 2019-03-19 | 英飞凌科技股份有限公司 | 一种用于制造组合半导体器件的方法 |
CN109494193B (zh) * | 2017-09-13 | 2023-09-12 | 英飞凌科技股份有限公司 | 一种用于制造组合半导体器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
JP3516916B2 (ja) | 2004-04-05 |
JP2001185634A (ja) | 2001-07-06 |
US20020076874A1 (en) | 2002-06-20 |
CN1157780C (zh) | 2004-07-14 |
IL138134A0 (en) | 2001-10-31 |
MY124964A (en) | 2006-07-31 |
GB0027232D0 (en) | 2000-12-27 |
TW516204B (en) | 2003-01-01 |
GB2362508B (en) | 2004-02-11 |
KR20010051482A (ko) | 2001-06-25 |
KR100352079B1 (ko) | 2002-09-12 |
IL138134A (en) | 2003-12-10 |
GB2362508A (en) | 2001-11-21 |
US6448124B1 (en) | 2002-09-10 |
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