CN1296641A - 显示装置 - Google Patents
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000004020 conductor Substances 0.000 abstract description 22
- 239000011888 foil Substances 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 101100400452 Caenorhabditis elegans map-2 gene Proteins 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002466 imines Chemical class 0.000 description 2
- 229920001281 polyalkylene Polymers 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000006181 electrochemical material Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
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- Engineering & Computer Science (AREA)
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Abstract
具有用满意的导电材料(金,银,镍)制成的双面导体图案的可弯曲的薄膜被使用于显示装置(LCD,OLCD)的导体图案的互联,这增强了设计的自由度。
Description
本发明涉及显示装置，包括带有用于以电传导方式来连接象素的导体图案的第一基片。导体图案可以被理解为是指仅仅列和行的导体的图案和其中引入驱动IC的更大的图案。
将这样的显示装置，特别是液晶显示装置，非常通用地用于测量设备，也用于便携式电话中。而且，基于(有机的)LED的场致发光显示装置得到越来越广泛的应用。
对于正在进行的电子装置小型化，一方面，有可能在基片上实现更多的标准驱动电子装置，另一方面，在提供面向消费者的解决方案，实现例如额外的功能方面的需要也同时在增加。在第一基片上的大部分的导体图案这样就变成为很长，由于其长度，使它们具有太高的电阻。由此造成的电压损失导致在象素区域的太低的驱动电压，这将以正确调整灰度作为代价，或甚至可能导致无法激励的象素。
本发明的目的是，提供以上所述类型的显示装置，其中，以可靠的方式对第一基片的表面设有连接到外部的低欧姆导体，而同时得到最大的设计自由度。
为此，本发明的特征在于，至少一部分薄膜的基片带有在薄膜的两面的电传导图案，该图案通过薄膜上的至少一个孔以电传导方式互相贯通连接(through-connected)。
最好将该导体图案实现为金属图案，每种金属用从金、银和镍中选择的每种金属。该导体图案可以假定任何想要的形状。由于选择低欧姆的金属作为导体图案的金属，导体条的长度对于电阻没有影响或几乎没有影响。这意味着，该导体图案可以放置在显示部分的周围，如果想要的话，以及可以在任何位置与用于另外(外部)接触的导体(例如，接头)相连接。
按照本发明的显示装置的第一实施例的特征在于，在第一基片上的导体图案在贯通连接的区域上被连接到薄膜上的导电的图案。通过提供只沿着实际的显示部分的边缘(即，靠近象素)的贯通连接，导体图案(通常是ITO轨条)的电阻几乎不影响总的电阻。
按照本发明的显示装置的另一个实施例的特征在于，薄膜是可弯曲的。直接的外部接触可以通过这样的可弯曲的薄膜来实现，但可替换地，这样的薄膜可以围绕基片的边缘弯曲，导体图案以惯例的方式(例如，通过各向异性导电性)被连接到印刷电路板的金属化的图案。
按照本发明的显示装置的再一个实施例的特征在于，在薄膜两侧的导电的图案形成交叉连接。这样的交叉连接的使用增加了在薄膜上实现设计电路的可能数目。
本发明可应用于基于液晶效应或其它的光电效应的显示装置，其中光电材料存在于两个基片之间。这样的实施例的特征在于，该显示装置包括第二基片和在两个基片之间的光电材料，每个基片装有规定象素的图形电极，连同插入的光电材料。
该显示装置也可以基于场致发光效应。
参照下面描述的实施例将明白本发明的这些和其它方面。
在附图中：
图1是按照本发明的显示器的第一实施例的一部分的平面视图，
图2是沿图1的线Ⅱ-Ⅱ取的截面，
图3示意显示图2的一部分的变例，
图4显示图2的一部分的另一个变例，
图5是按照本发明的显示器的第二实施例的一部分的平面视图，
图6是沿图5的线Ⅵ-Ⅵ取的截面，以及
图7和8是沿图5的线Ⅶ-Ⅶ和Ⅷ-Ⅷ取的截面。
这些图不是按比例画的；对应的元件通常用相同的参考数字表示。
图1是平面图，以及图2是显示装置的一部分的截面图，在这个例子中，液晶显示装置包括液晶小单元1，带有扭曲的丝状1的液晶材料2，它存在在两个透明的玻璃或合成材料的基片3，4之间，在本实施例中其上装有电极5，6。显示装置还包括极化器(未示出)，它的极化方向是互相垂直的。显示装置也包括取向层(未示出)，它在本实施例中排列基片的内壁上的液晶材料的方向，以使得小单元具有扭转的90度。在本实施例中，液晶材料具有正性的光各向异性和正性的介质各向异性。当电极5，6用电压给分子加能量时，导向装置把它们引导到电场。小单元1以小单元壁或密封的边缘7为周界。
ITO(氧化铟锡)的透明的电极5，6，在本实施例是互相交叉的，在交叉面积上规定了象素，电极必须加上驱动电压。这些电压可以通过在支撑上(在本例中是印刷电路板)的导电轨条从外部加上。
在图1的实施例中，电极5通过被安装在第一基片3上的驱动电路(IC)12加上驱动电压。电极5(以及通过LCD技术上惯例的方法，还有电极6)通过凸起物13被连接。其它凸起物13接触在薄膜15上的导体图案14’。按照本发明，(例如，聚烯亚胺的)薄膜的两侧有导体图案。在本实施例中，薄膜是可弯曲的，以及在一侧具有金属图案，例如金的图案14，规定连接的导体。在另一侧上的金的图案14’只在本实施例中包含接触区域，它通过贯通连接(或通路)以电传导方式连接到图案14。如果必要的话，接触区域14’通过导体5’连接到凸起物13。导体5’不一定用ITO制成，但可以替换地用金属制成，或当使用(LT)多-晶体管用于连接而不用驱动IC时，形成多晶硅轨条的图案的形式。
在图3的实施例中，对于在导体14’与导体5之间的电连接(现在没有IC 12)，使用额外的各向异性导体16，在本实施例中是带有横过薄膜的导电的铜轨条的聚烯亚胺铜薄膜。
图4显示一个变例，其中带有导体14的薄膜15(如上所述)延伸到基片3的边缘17。图4清晰地显示，参照图2描述的薄膜可以围绕基片3弯曲，以便通过各向异性导体18接触印刷电路板20的表面上的导体轨条19。
图5和图6显示一个变例，其中基片3上的薄膜15具有开孔(有点划线21表示)用于显示装置1(例如，多LED显示装置，或如在本实施例中那样，LCD显示装置)和IC 12。导体5，14，14’作为例子是任意画出的，但被认为形成一个功能性整体。从图5上看到，在薄膜15表面上有可能提供导体14的图案，该图案在通路(贯通连接)16的区域上接触图案14’。在这种情况下，一方面，有可能类似于图3接触导体轨条5。另一方面，有可能局部中断导体轨条14到薄膜15的一侧上的通路区域，以及实现提供全部连接16到薄膜15的另一侧的导体轨条14’的连接(图7，8)。在本实施例中，大部分薄膜15(特别是在导体图案14，14’和贯通连接的区域)通过粘结连接被固定在基片上。如果想要的话，连到外部的所有连接可以在基片的一侧实现，但从不同的侧面进行连接也是可能的。由于导体图案14由低欧姆材料(金、银、镍)制成，所以有很大的设计自由度，而同时并不出现由于长的导体轨条造成的电压损失。
当然，本发明并不限于所显示的实施例，而是有可能在本发明的范围内有许多变例。例如，不用液晶材料，而可以使用其它的光电材料，诸如电泳或电化学材料。
总之，本发明涉及(可弯曲的)薄膜在显示装置(LCD，OLCD)中的使用，该薄膜的两侧带有低欧姆的、互联的导体图案，因此提供了很大的自由度。
本发明归结于每个和每种新型特征以及每个和每种特征的组合。
Claims (10)
1．一种显示装置，包括带有用于以电传导方式来连接象素的导体图案的第一基片，其特征在于，至少一部分薄膜的基片带有在薄膜的两面的电传导图案，该图案通过薄膜上的至少一个孔以电传导方式互相全部连接。
2．如权利要求1的显示装置，其特征在于，在薄膜两侧上的导体图案是金属图案。
3．如权利要求2的显示装置，其特征在于，该金属是从金、银和镍的一组中进行选择的。
4．如权利要求1的显示装置，其特征在于，在第一基片上的导体图案在贯通连接的区域上被连接到薄膜上的导电的图案。
5．如权利要求4的显示装置，其特征在于，带有完全连接的薄膜的一部分被固定在基片上。
6．如权利要求1的显示装置，其特征在于，薄膜是可弯曲的。
7．如权利要求4的显示装置，其特征在于，至少一个导电的图案接触在另一个支撑上的导体图案。
8．如权利要求1的显示装置，其特征在于，在薄膜两侧的导电的图案形成交叉连接。
9．如权利要求1的显示装置，其特征在于，显示装置包括第二基片和在两个基片之间的光电材料，每个基片装有规定象素的图形电极，连同插入的光电材料。
10．如权利要求1的显示装置，其特征在于，显示装置包括场致发光材料。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP99200671 | 1999-03-08 | ||
| EP99200671.8 | 1999-03-08 |
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| Publication Number | Publication Date |
|---|---|
| CN1296641A true CN1296641A (zh) | 2001-05-23 |
| CN1174488C CN1174488C (zh) | 2004-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB008002886A Expired - Lifetime CN1174488C (zh) | 1999-03-08 | 2000-02-14 | 显示装置 |
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| Country | Link |
|---|---|
| US (1) | US7064751B1 (zh) |
| EP (1) | EP1080497A1 (zh) |
| JP (1) | JP2002539485A (zh) |
| CN (1) | CN1174488C (zh) |
| WO (1) | WO2000054333A1 (zh) |
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| DE10133651B4 (de) * | 2001-07-11 | 2006-02-23 | Siemens Ag | Flexible Anzeigeeinheit und Verfahren zu deren Betrieb |
| US8510935B2 (en) * | 2007-07-10 | 2013-08-20 | Joseph C Fjelstad | Electronic assemblies without solder and methods for their manufacture |
| US7782191B2 (en) * | 2007-07-25 | 2010-08-24 | Tomas Flores | Portable alarm apparatus for warning persons |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS6161341A (ja) * | 1984-08-31 | 1986-03-29 | Fujitsu Ltd | ガス放電パネル |
| JP2548677Y2 (ja) * | 1991-05-10 | 1997-09-24 | シャープ株式会社 | 液晶用照明装置 |
| US5812227A (en) * | 1992-04-02 | 1998-09-22 | Canon Kabushiki Kaisha | Liquid crystal device, display apparatus using same and display method using same |
| JP2727862B2 (ja) * | 1992-04-28 | 1998-03-18 | 日本電気株式会社 | 接続テープおよびフィルムキャリア型ｉｃならびに接続方法 |
| US5278724A (en) * | 1992-07-06 | 1994-01-11 | International Business Machines Corporation | Electronic package and method of making same |
| JP2721093B2 (ja) * | 1992-07-21 | 1998-03-04 | 三菱電機株式会社 | 半導体装置 |
| DE69328197T2 (de) * | 1992-12-15 | 2000-08-17 | Idemitsu Kosan Co | Transparente, leitende schicht, transparentes, leitendes basismaterial und leitendes material |
| US5399902A (en) * | 1993-03-04 | 1995-03-21 | International Business Machines Corporation | Semiconductor chip packaging structure including a ground plane |
| US5436744A (en) * | 1993-09-03 | 1995-07-25 | Motorola Inc. | Flexible liquid crystal display with integrated driver circuit and display electrodes formed on opposite sides of folded substrate |
| DE69428528T2 (de) * | 1994-01-01 | 2002-04-11 | Koninkl Philips Electronics Nv | Flüssigkristall-anzeigevorrichtung und verfahren zur herstellung einer anzahl von flüssigkristall-anzeigevorrichtungen |
| JP3143565B2 (ja) * | 1994-02-28 | 2001-03-07 | キヤノン株式会社 | フレキシブルプリント配線、その接続装置、及び電気回路装置 |
| US5802699A (en) * | 1994-06-07 | 1998-09-08 | Tessera, Inc. | Methods of assembling microelectronic assembly with socket for engaging bump leads |
| TW344043B (en) * | 1994-10-21 | 1998-11-01 | Hitachi Ltd | Liquid crystal display device with reduced frame portion surrounding display area |
| US5834327A (en) * | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
| DE19626377A1 (de) * | 1996-07-01 | 1998-01-08 | Dunkel Otto Gmbh | Kontaktvorrichtung zur elektrischen Verbindung einer Leiterplatte mit einer Flüssigkristallanzeigeplatte |
| US5973761A (en) * | 1997-01-31 | 1999-10-26 | Canon Kabushiki Kaisha | Ferroelectic liquid crystal device having a low-resistivity layer below an alignment control layer |
| US5851709A (en) * | 1997-10-31 | 1998-12-22 | Eastman Kodak Company | Method for selective transfer of a color organic layer |
| JP3380482B2 (ja) * | 1997-12-26 | 2003-02-24 | シャープ株式会社 | 液晶表示装置 |
| US6236440B1 (en) * | 1998-07-22 | 2001-05-22 | U.S. Philips Corporation | Display device in which one of the two electrodes of a pixel is coated with a dipole material to equalize the electrode work functions |
-
2000
- 2000-02-14 JP JP2000604462A patent/JP2002539485A/ja active Pending
- 2000-02-14 EP EP00909161A patent/EP1080497A1/en not_active Withdrawn
- 2000-02-14 CN CNB008002886A patent/CN1174488C/zh not_active Expired - Lifetime
- 2000-02-14 WO PCT/EP2000/001176 patent/WO2000054333A1/en not_active Application Discontinuation
- 2000-03-06 US US09/519,551 patent/US7064751B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002539485A (ja) | 2002-11-19 |
| EP1080497A1 (en) | 2001-03-07 |
| WO2000054333A1 (en) | 2000-09-14 |
| US7064751B1 (en) | 2006-06-20 |
| CN1174488C (zh) | 2004-11-03 |
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Owner name: TONGBAO HONG KONG CO., LTD. Free format text: FORMER OWNER: ROYAL PHILIPS ELECTRONICS CO., LTD. Effective date: 20070309 |
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Address after: Room 2003, 20 / F, phase 3, Chuang Ji City, 370 Kwun Tong Road, Kowloon City, Hong Kong, China Patentee after: Groupon optoelectronics Hong Kong Holdings Ltd. Address before: Two floor, PHILPS building, 5 East Science Avenue, Sha Tin Hongkong Science Park, Hongkong, China Patentee before: Tpo Hong Kong Holding Ltd. |
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Effective date of registration: 20191030 Address after: No. 160, science Road, Zhunan base, Xinzhu Science Industrial Park, Zhunan Town, Miaoli County, Taiwan, China Patentee after: INNOLUX DISPLAY CORP. Address before: Room 2003, 20 / F, phase 3, Chuang Ji City, 370 Kwun Tong Road, Kowloon City, Hong Kong, China Patentee before: Groupon optoelectronics Hong Kong Holdings Ltd. |
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