CN1295717C - 高频集成电路中的高品质因数电感 - Google Patents
高频集成电路中的高品质因数电感 Download PDFInfo
- Publication number
- CN1295717C CN1295717C CNB028035984A CN02803598A CN1295717C CN 1295717 C CN1295717 C CN 1295717C CN B028035984 A CNB028035984 A CN B028035984A CN 02803598 A CN02803598 A CN 02803598A CN 1295717 C CN1295717 C CN 1295717C
- Authority
- CN
- China
- Prior art keywords
- trap
- substrate
- inductance
- passivation
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000005530 etching Methods 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 13
- 238000011049 filling Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 239000005368 silicate glass Substances 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims 4
- 208000034189 Sclerosis Diseases 0.000 claims 1
- -1 hydroxide amine Chemical class 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000003071 parasitic effect Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 230000005291 magnetic effect Effects 0.000 description 5
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012612 commercial material Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- BGOFCVIGEYGEOF-UJPOAAIJSA-N helicin Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OC1=CC=CC=C1C=O BGOFCVIGEYGEOF-UJPOAAIJSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
- H01F27/363—Electric or magnetic shields or screens made of electrically conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/36—Electric or magnetic shields or screens
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
- Coils Or Transformers For Communication (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/781,014 US6534843B2 (en) | 2001-02-10 | 2001-02-10 | High Q inductor with faraday shield and dielectric well buried in substrate |
US09/781,014 | 2001-02-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1484838A CN1484838A (zh) | 2004-03-24 |
CN1295717C true CN1295717C (zh) | 2007-01-17 |
Family
ID=25121395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028035984A Expired - Lifetime CN1295717C (zh) | 2001-02-10 | 2002-02-07 | 高频集成电路中的高品质因数电感 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6534843B2 (zh) |
EP (1) | EP1358661B1 (zh) |
JP (1) | JP3777159B2 (zh) |
KR (1) | KR100522655B1 (zh) |
CN (1) | CN1295717C (zh) |
AT (1) | ATE463828T1 (zh) |
DE (1) | DE60235872D1 (zh) |
TW (1) | TW548798B (zh) |
WO (1) | WO2002065490A1 (zh) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6492708B2 (en) * | 2001-03-14 | 2002-12-10 | International Business Machines Corporation | Integrated coil inductors for IC devices |
US7310039B1 (en) | 2001-11-30 | 2007-12-18 | Silicon Laboratories Inc. | Surface inductor |
US6777774B2 (en) * | 2002-04-17 | 2004-08-17 | Chartered Semiconductor Manufacturing Limited | Low noise inductor using electrically floating high resistive and grounded low resistive patterned shield |
US20040222511A1 (en) * | 2002-10-15 | 2004-11-11 | Silicon Laboratories, Inc. | Method and apparatus for electromagnetic shielding of a circuit element |
US7141883B2 (en) * | 2002-10-15 | 2006-11-28 | Silicon Laboratories Inc. | Integrated circuit package configuration incorporating shielded circuit element structure |
US9368272B2 (en) | 2003-02-26 | 2016-06-14 | Analogic Corporation | Shielded power coupling device |
US9490063B2 (en) | 2003-02-26 | 2016-11-08 | Analogic Corporation | Shielded power coupling device |
US7868723B2 (en) * | 2003-02-26 | 2011-01-11 | Analogic Corporation | Power coupling device |
US8350655B2 (en) * | 2003-02-26 | 2013-01-08 | Analogic Corporation | Shielded power coupling device |
US20050014317A1 (en) * | 2003-07-18 | 2005-01-20 | Pyo Sung Gyu | Method for forming inductor in semiconductor device |
US6936764B2 (en) * | 2003-08-12 | 2005-08-30 | International Business Machines Corporation | Three dimensional dynamically shielded high-Q BEOL metallization |
US7075167B2 (en) | 2003-08-22 | 2006-07-11 | Agere Systems Inc. | Spiral inductor formed in a semiconductor substrate |
EP1553812A3 (fr) * | 2003-12-11 | 2013-04-03 | STMicroelectronics S.A. | Puce à semiconducteur et circuit comprenant une inductance blindée |
US7350292B2 (en) * | 2004-03-19 | 2008-04-01 | Hewlett-Packard Development Company, L.P. | Method for affecting impedance of an electrical apparatus |
US7255801B2 (en) * | 2004-04-08 | 2007-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep submicron CMOS compatible suspending inductor |
US7005371B2 (en) * | 2004-04-29 | 2006-02-28 | International Business Machines Corporation | Method of forming suspended transmission line structures in back end of line processing |
US7375411B2 (en) * | 2004-06-03 | 2008-05-20 | Silicon Laboratories Inc. | Method and structure for forming relatively dense conductive layers |
KR100632464B1 (ko) * | 2004-08-03 | 2006-10-09 | 삼성전자주식회사 | 수동 소자 쉴드 구조를 포함하는 집적 회로 및 그 제조방법 |
US7663205B2 (en) | 2004-08-03 | 2010-02-16 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a dummy gate structure below a passive electronic element |
US7283029B2 (en) * | 2004-12-08 | 2007-10-16 | Purdue Research Foundation | 3-D transformer for high-frequency applications |
US7501924B2 (en) * | 2005-09-30 | 2009-03-10 | Silicon Laboratories Inc. | Self-shielding inductor |
JP4908035B2 (ja) * | 2006-03-30 | 2012-04-04 | 株式会社東芝 | 半導体集積回路 |
DE102006062844B4 (de) * | 2006-05-12 | 2016-11-17 | Infineon Technologies Ag | Abschirmvorrichtung zum Abschirmen von elektromagnetischer Strahlung |
DE102006022360B4 (de) | 2006-05-12 | 2009-07-09 | Infineon Technologies Ag | Abschirmvorrichtung |
US8455350B2 (en) * | 2006-08-18 | 2013-06-04 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system employing gate shield and/or ground shield |
US7489218B2 (en) * | 2007-01-24 | 2009-02-10 | Via Technologies, Inc. | Inductor structure |
US8058960B2 (en) * | 2007-03-27 | 2011-11-15 | Alpha And Omega Semiconductor Incorporated | Chip scale power converter package having an inductor substrate |
US8492872B2 (en) * | 2007-10-05 | 2013-07-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | On-chip inductors with through-silicon-via fence for Q improvement |
US8169050B2 (en) * | 2008-06-26 | 2012-05-01 | International Business Machines Corporation | BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit |
US7811919B2 (en) * | 2008-06-26 | 2010-10-12 | International Business Machines Corporation | Methods of fabricating a BEOL wiring structure containing an on-chip inductor and an on-chip capacitor |
US7948346B2 (en) * | 2008-06-30 | 2011-05-24 | Alpha & Omega Semiconductor, Ltd | Planar grooved power inductor structure and method |
US8237243B2 (en) | 2009-03-18 | 2012-08-07 | International Business Machines Corporation | On-chip capacitors with a variable capacitance for a radiofrequency integrated circuit |
US8164159B1 (en) | 2009-07-18 | 2012-04-24 | Intergrated Device Technologies, inc. | Semiconductor resonators with electromagnetic and environmental shielding and methods of forming same |
EP2302675A1 (en) * | 2009-09-29 | 2011-03-30 | STMicroelectronics (Grenoble 2) SAS | Electronic circuit with an inductor |
JP6009139B2 (ja) * | 2010-06-22 | 2016-10-19 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
CN102208405B (zh) * | 2010-08-24 | 2015-11-25 | 华东师范大学 | 平面螺旋电感 |
US8648664B2 (en) | 2011-09-30 | 2014-02-11 | Silicon Laboratories Inc. | Mutual inductance circuits |
US8809956B2 (en) * | 2011-10-13 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Vertically oriented semiconductor device and shielding structure thereof |
US8659126B2 (en) * | 2011-12-07 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit ground shielding structure |
US8610247B2 (en) | 2011-12-30 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a transformer with magnetic features |
US8644948B2 (en) | 2011-10-28 | 2014-02-04 | Medtronic, Inc. | Converter device for communicating with multiple medical devices |
US8710622B2 (en) | 2011-11-17 | 2014-04-29 | Harris Corporation | Defected ground plane inductor |
US8664717B2 (en) | 2012-01-09 | 2014-03-04 | Globalfoundries Inc. | Semiconductor device with an oversized local contact as a Faraday shield |
US9064868B2 (en) | 2012-10-12 | 2015-06-23 | Globalfoundries Inc. | Advanced faraday shield for a semiconductor device |
US9355972B2 (en) | 2014-03-04 | 2016-05-31 | International Business Machines Corporation | Method for making a dielectric region in a bulk silicon substrate providing a high-Q passive resonator |
TWI615860B (zh) | 2015-04-24 | 2018-02-21 | 瑞昱半導體股份有限公司 | 積體電感 |
CN105140288B (zh) * | 2015-09-11 | 2018-05-01 | 电子科技大学 | 射频ldmos器件 |
US9966182B2 (en) | 2015-11-16 | 2018-05-08 | Globalfoundries Inc. | Multi-frequency inductors with low-k dielectric area |
CN106653568B (zh) * | 2016-12-02 | 2019-04-16 | 昆山纳尔格信息科技有限公司 | 一种低干扰电感结构的制造方法 |
CN106783019B (zh) * | 2016-12-02 | 2018-08-28 | 江苏贺鸿电子有限公司 | 一种低干扰电感结构 |
US10510663B2 (en) * | 2017-03-30 | 2019-12-17 | Globalfoundries Inc. | Transistor structures having electrically floating metal layer between active metal lines |
US11011459B1 (en) * | 2020-02-06 | 2021-05-18 | Qualcomm Incorporated | Back-end-of-line (BEOL) on-chip sensor |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5446311A (en) | 1994-09-16 | 1995-08-29 | International Business Machines Corporation | High-Q inductors in silicon technology without expensive metalization |
US5559360A (en) | 1994-12-19 | 1996-09-24 | Lucent Technologies Inc. | Inductor for high frequency circuits |
US5742091A (en) * | 1995-07-12 | 1998-04-21 | National Semiconductor Corporation | Semiconductor device having a passive device formed over one or more deep trenches |
US5760456A (en) | 1995-12-21 | 1998-06-02 | Grzegorek; Andrew Z. | Integrated circuit compatible planar inductors with increased Q |
US5793272A (en) | 1996-08-23 | 1998-08-11 | International Business Machines Corporation | Integrated circuit toroidal inductor |
US5861647A (en) | 1996-10-02 | 1999-01-19 | National Semiconductor Corporation | VLSI capacitors and high Q VLSI inductors using metal-filled via plugs |
US5736749A (en) * | 1996-11-19 | 1998-04-07 | Lucent Technologies Inc. | Integrated circuit device with inductor incorporated therein |
EP0862218B1 (en) | 1997-02-28 | 2007-02-28 | Telefonaktiebolaget LM Ericsson (publ) | An improved-q inductor with multiple metalization levels |
AU6468198A (en) * | 1997-05-02 | 1998-11-27 | Board Of Trustees Of The Leland Stanford Junior University | Patterned ground shields for integrated circuit inductors |
US5959515A (en) | 1997-08-11 | 1999-09-28 | Motorola, Inc. | High Q integrated resonator structure |
US6153489A (en) | 1997-12-22 | 2000-11-28 | Electronics And Telecommunications Research Institute | Fabrication method of inductor devices using a substrate conversion technique |
US6046109A (en) | 1997-12-29 | 2000-04-04 | Industrial Technology Research Institute | Creation of local semi-insulating regions on semiconductor substrates |
TW363278B (en) * | 1998-01-16 | 1999-07-01 | Winbond Electronics Corp | Preparation method for semiconductor to increase the inductive resonance frequency and Q value |
US5959522A (en) | 1998-02-03 | 1999-09-28 | Motorola, Inc. | Integrated electromagnetic device and method |
US6008102A (en) | 1998-04-09 | 1999-12-28 | Motorola, Inc. | Method of forming a three-dimensional integrated inductor |
JP3214441B2 (ja) * | 1998-04-10 | 2001-10-02 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6169008B1 (en) | 1998-05-16 | 2001-01-02 | Winbond Electronics Corp. | High Q inductor and its forming method |
JP2000022085A (ja) * | 1998-06-29 | 2000-01-21 | Toshiba Corp | 半導体装置及びその製造方法 |
US5918121A (en) | 1998-07-09 | 1999-06-29 | Winbond Electronics Corp. | Method of reducing substrate losses in inductor |
US6037649A (en) | 1999-04-01 | 2000-03-14 | Winbond Electronics Corp. | Three-dimension inductor structure in integrated circuit technology |
US6221727B1 (en) * | 1999-08-30 | 2001-04-24 | Chartered Semiconductor Manufacturing Ltd. | Method to trap air at the silicon substrate for improving the quality factor of RF inductors in CMOS technology |
US6261892B1 (en) * | 1999-12-31 | 2001-07-17 | Texas Instruments Incorporated | Intra-chip AC isolation of RF passive components |
-
2001
- 2001-02-10 US US09/781,014 patent/US6534843B2/en not_active Expired - Lifetime
-
2002
- 2002-02-07 CN CNB028035984A patent/CN1295717C/zh not_active Expired - Lifetime
- 2002-02-07 KR KR10-2003-7009973A patent/KR100522655B1/ko not_active IP Right Cessation
- 2002-02-07 DE DE60235872T patent/DE60235872D1/de not_active Expired - Lifetime
- 2002-02-07 EP EP02711020A patent/EP1358661B1/en not_active Expired - Lifetime
- 2002-02-07 AT AT02711020T patent/ATE463828T1/de not_active IP Right Cessation
- 2002-02-07 WO PCT/GB2002/000525 patent/WO2002065490A1/en active IP Right Grant
- 2002-02-07 JP JP2002565326A patent/JP3777159B2/ja not_active Expired - Fee Related
- 2002-02-08 TW TW091102429A patent/TW548798B/zh not_active IP Right Cessation
-
2003
- 2003-01-03 US US10/336,291 patent/US6762088B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1358661B1 (en) | 2010-04-07 |
TW548798B (en) | 2003-08-21 |
US6762088B2 (en) | 2004-07-13 |
JP2004526311A (ja) | 2004-08-26 |
KR100522655B1 (ko) | 2005-10-19 |
WO2002065490A1 (en) | 2002-08-22 |
US20020109204A1 (en) | 2002-08-15 |
CN1484838A (zh) | 2004-03-24 |
ATE463828T1 (de) | 2010-04-15 |
US6534843B2 (en) | 2003-03-18 |
EP1358661A1 (en) | 2003-11-05 |
DE60235872D1 (de) | 2010-05-20 |
US20030096435A1 (en) | 2003-05-22 |
JP3777159B2 (ja) | 2006-05-24 |
KR20030074751A (ko) | 2003-09-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1295717C (zh) | 高频集成电路中的高品质因数电感 | |
CN103700650B (zh) | 半导体元件和制造半导体元件的方法 | |
CN101794775B (zh) | 在半导体衬底中形成的螺旋电感以及形成该电感的方法 | |
US10157706B2 (en) | Inductor structure with magnetic material | |
US6239684B1 (en) | High-Q inductive elements | |
US7402884B2 (en) | Low crosstalk substrate for mixed-signal integrated circuits | |
US8791784B2 (en) | Vertically oriented semiconductor device and shielding structure thereof | |
US20130043557A1 (en) | Vertically oriented semiconductor device and shielding structure thereof | |
US8951812B2 (en) | Vertically oriented semiconductor device and shielding structure thereof | |
JPWO2004112138A1 (ja) | 半導体デバイスおよびその製造方法 | |
WO1998050956A1 (en) | Patterned ground shields for integrated circuit inductors | |
JP5026257B2 (ja) | 電子装置 | |
CN1416145A (zh) | 低衬底损耗电感 | |
CN1282246C (zh) | 可阻断寄生损失电流的高功率射频集成电路及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171122 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171122 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20070117 |