CN1288696C - 离子源及其运行方法 - Google Patents
离子源及其运行方法 Download PDFInfo
- Publication number
- CN1288696C CN1288696C CNB011384298A CN01138429A CN1288696C CN 1288696 C CN1288696 C CN 1288696C CN B011384298 A CNB011384298 A CN B011384298A CN 01138429 A CN01138429 A CN 01138429A CN 1288696 C CN1288696 C CN 1288696C
- Authority
- CN
- China
- Prior art keywords
- filament
- reflector
- plasma generator
- current
- ion source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000342057 | 2000-11-09 | ||
JP342057/00 | 2000-11-09 | ||
JP2001066623 | 2001-03-09 | ||
JP66623/01 | 2001-03-09 | ||
JP261486/01 | 2001-08-30 | ||
JP2001261486A JP3797160B2 (ja) | 2000-11-09 | 2001-08-30 | イオン源およびその運転方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1353443A CN1353443A (zh) | 2002-06-12 |
CN1288696C true CN1288696C (zh) | 2006-12-06 |
Family
ID=27345156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB011384298A Expired - Fee Related CN1288696C (zh) | 2000-11-09 | 2001-11-09 | 离子源及其运行方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6525482B2 (zh) |
JP (1) | JP3797160B2 (zh) |
KR (1) | KR100664770B1 (zh) |
CN (1) | CN1288696C (zh) |
GB (1) | GB2373919A (zh) |
SG (1) | SG97219A1 (zh) |
TW (1) | TW522427B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4175604B2 (ja) * | 2001-11-16 | 2008-11-05 | 日新イオン機器株式会社 | イオン源 |
EP1470738A2 (en) * | 2002-01-30 | 2004-10-27 | N.V. Bekaert S.A. | Heating in a vacuum atmosphere in the presence of a plasma |
GB2407433B (en) * | 2003-10-24 | 2008-12-24 | Applied Materials Inc | Cathode and counter-cathode arrangement in an ion source |
US7122966B2 (en) * | 2004-12-16 | 2006-10-17 | General Electric Company | Ion source apparatus and method |
KR100606032B1 (ko) * | 2004-12-22 | 2006-07-28 | 동부일렉트로닉스 주식회사 | 이온 주입 장치의 최적화 방법 |
US7446326B2 (en) * | 2005-08-31 | 2008-11-04 | Varian Semiconductor Equipment Associates, Inc. | Technique for improving ion implanter productivity |
JP4345895B2 (ja) * | 2005-10-20 | 2009-10-14 | 日新イオン機器株式会社 | イオン源の運転方法およびイオン注入装置 |
US7429863B2 (en) * | 2006-07-18 | 2008-09-30 | Brooks Automation, Inc. | Method and apparatus for maintaining emission capabilities of hot cathodes in harsh environments |
JP4915671B2 (ja) | 2007-09-20 | 2012-04-11 | 日新イオン機器株式会社 | イオン源、イオン注入装置およびイオン注入方法 |
JP5040723B2 (ja) | 2008-02-26 | 2012-10-03 | 日新イオン機器株式会社 | イオン源 |
US8072149B2 (en) * | 2008-03-31 | 2011-12-06 | Varian Semiconductor Equipment Associates, Inc. | Unbalanced ion source |
CN102573257A (zh) * | 2012-01-11 | 2012-07-11 | 西安电子科技大学 | 大面积均匀等离子体电子密度控制系统 |
US8658986B1 (en) * | 2012-10-11 | 2014-02-25 | Ion Technology Solutions, Llc | Ion source assembly |
CN103469164B (zh) * | 2013-08-19 | 2015-07-15 | 北京航空航天大学 | 一种实现等离子体激活电子束物理气相沉积的装置和方法 |
US20160322198A1 (en) * | 2015-04-30 | 2016-11-03 | Infineon Technologies Ag | Ion Source for Metal Implantation and Methods Thereof |
CN105655217B (zh) * | 2015-12-14 | 2017-12-15 | 中国电子科技集团公司第四十八研究所 | 一种射频偏压供电的磁控溅射金属铝离子源 |
TWI550678B (zh) * | 2016-05-11 | 2016-09-21 | 粘俊能 | 離子源及其熱電子產生方法 |
US9978554B1 (en) | 2017-01-26 | 2018-05-22 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
CN109030518B (zh) * | 2018-06-04 | 2020-04-28 | 西安交通大学 | 一种适用于电子致解吸产额测试装置的可替代电子源 |
CN113314392B (zh) * | 2021-05-24 | 2022-12-30 | 中国科学技术大学 | 空间等离子体仪器定标离子源装置 |
US20230162941A1 (en) * | 2021-11-22 | 2023-05-25 | Applied Materials, Inc. | Shield For Filament In An Ion Source |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3838947A1 (de) * | 1987-11-20 | 1989-06-01 | Osaka Prefecture | Ionenquelle |
JP2869558B2 (ja) | 1989-02-23 | 1999-03-10 | 東京エレクトロン株式会社 | イオン注入方法 |
JPH06295693A (ja) | 1993-04-08 | 1994-10-21 | Nissin Electric Co Ltd | イオン源装置 |
JPH0963981A (ja) * | 1995-08-29 | 1997-03-07 | Hitachi Ltd | イオン発生装置およびそれを用いたイオン注入装置 |
JPH09161703A (ja) | 1995-12-13 | 1997-06-20 | Hitachi Ltd | イオン生成装置およびそれを用いた半導体製造装置 |
JPH10177846A (ja) | 1996-12-18 | 1998-06-30 | Sony Corp | イオン注入装置のイオン源 |
US5896193A (en) | 1997-02-14 | 1999-04-20 | Jds Fitel Inc. | Apparatus for testing an optical component |
JP3899161B2 (ja) * | 1997-06-30 | 2007-03-28 | 株式会社 Sen−Shi・アクセリス カンパニー | イオン発生装置 |
JP4029495B2 (ja) * | 1998-09-16 | 2008-01-09 | 日新イオン機器株式会社 | イオン源 |
JP3716700B2 (ja) * | 2000-02-25 | 2005-11-16 | 日新電機株式会社 | イオン源およびその運転方法 |
-
2001
- 2001-08-30 JP JP2001261486A patent/JP3797160B2/ja not_active Expired - Fee Related
- 2001-11-08 KR KR1020010069413A patent/KR100664770B1/ko not_active IP Right Cessation
- 2001-11-09 SG SG200106934A patent/SG97219A1/en unknown
- 2001-11-09 US US09/986,628 patent/US6525482B2/en not_active Expired - Lifetime
- 2001-11-09 CN CNB011384298A patent/CN1288696C/zh not_active Expired - Fee Related
- 2001-11-09 GB GB0127053A patent/GB2373919A/en not_active Withdrawn
- 2001-11-09 TW TW090127917A patent/TW522427B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB0127053D0 (en) | 2002-01-02 |
CN1353443A (zh) | 2002-06-12 |
KR20020036730A (ko) | 2002-05-16 |
JP3797160B2 (ja) | 2006-07-12 |
JP2002334662A (ja) | 2002-11-22 |
TW522427B (en) | 2003-03-01 |
KR100664770B1 (ko) | 2007-01-04 |
SG97219A1 (en) | 2003-07-18 |
GB2373919A (en) | 2002-10-02 |
US20020053880A1 (en) | 2002-05-09 |
US6525482B2 (en) | 2003-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NISHIN MOTORS CO LTD Free format text: FORMER OWNER: NISHIN DENKI CO., LTD. Effective date: 20060414 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20060414 Address after: Kyoto City, Kyoto, Japan Applicant after: Nishin Ion Equipment Co., Ltd. Address before: Kyoto Japan Applicant before: Nissin Electric Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061206 Termination date: 20141109 |
|
EXPY | Termination of patent right or utility model |