CN1286223C - 一种无需添加材料进行焊接将元件连接到连接支座的方法 - Google Patents

一种无需添加材料进行焊接将元件连接到连接支座的方法 Download PDF

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CN1286223C
CN1286223C CNB021406839A CN02140683A CN1286223C CN 1286223 C CN1286223 C CN 1286223C CN B021406839 A CNB021406839 A CN B021406839A CN 02140683 A CN02140683 A CN 02140683A CN 1286223 C CN1286223 C CN 1286223C
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bearing
terminal
accepting
connection
splicing ear
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CN1396684A (zh
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J·F·阿库
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Koninklijke Philips NV
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Abstract

本发明涉及一种将带有多个电连接端子(18)的至少一个元件(12)连接到连接支座(10)的方法，其包括：步骤a，设置由可透过至少一种激光光束波长的材料制成的连接支座(10)，所述支座设有至少一个第一面(14)，所述第一面带有与所述元件的所述连接端子(18)相配合的接受端子(16)，所述接受端子(16)包括无需填加材料就能够焊接到所述元件的连接端子的材料；步骤b，所述元件(12)设置在所述连接支座(10)的所述第一面(14)上，使所述元件的连接端子与所述支座的所述接受端子(16)重合；步骤c，通过施加透过所述支座的可透过波长材料的焊接激光光束(L)到所述接受端子，将所述元件的连接端子直接焊接到所述支座的所述接受端子。

Description

一种无需添加材料进行焊接将元件连接到连接支座的方法
技术领域
本发明涉及一种连接一个或多个元件到连接支座的方法。特别涉及电子元件或光电元件的相互连接和包装。
已经知道有各种类型的连接支座。第一种类型的支座称作“互连支座”，是用来接受多个元件，可用作元件互相连接装置，如用来形成电路。另一种类型的支座称作“中间支座”，通常用于结合包装内的元件。中间支座的的作用其实是使一个或多个元件的小间距的连接端子适合于印制电路板的较宽的间距。中间支座的另一作用是减少由于元件和互连支座，或元件和印制电路板，之间热膨胀系数不同造成的应力。
因此，本发明可以应用于电子和光电子领域，特别是用于元件互相连接和/或其包装互相连接。本发明特别涉及手提电话的元件。
背景技术
文献(1)到(10)的全部索引在说明书结束时给出，文献介绍了各种已知的用于机械和电子连接元件的技术。
这些技术之一是利用易熔材料球来连接元件。这种技术也称作“倒装片工艺”，是用低熔点的材料覆盖元件的连接端子或支承基底的接受端子。这种材料一般具有突出的或球形的形式。在将元件设置在支承基底上后，仔细地使对应的端子重合，易熔化的材料受热成形并将接触端子焊接到接受端子上。这种焊接中易熔化材料构成了添加材料。
易熔化材料的熔化通过加热由球覆盖的元件和支座形成的组件来进行。这主要发生在熔点足够低不会影响到元件的情况下。另一方面，当元件是易碎的时，熔化材料的球也可以局部加热，例如通过激光光束。
通过熔化材料球连接的技术要求很多工艺步骤。事实上要求元件和连接支座设置销钉，销钉是互相独立的，是可用熔化材料润湿的材料制成。因此需要用熔化材料来覆盖钉销，最后还需要进行焊接。
另外，熔化材料球使元件之间，或元件和连接支座之间保持一定的空间。这个空间在一些情况下削弱了元件的紧凑性，还存在对损害良好保护的危险。
最后，进行焊接需要的附加材料，如熔化材料，和接受熔化材料的粘合层很可能含有铅，这对环境是有害的。
发明内容
本发明的一个目的是提出一种连接方法，没有上面提到的困难和局限。
本发明的一个目的主要是提出一种简单和经济的连接方法，这种方法可减少操作步骤的数目。
本发明的另一个目的是提出一种可避免使用铅的方法。
本发明的另一个目的是提出一种特别紧凑和可靠的元件的包装。
为实现这些目的，本发明特别为这些目的提供了一种可连接带有多个电连接端子的至少一个元件到连接支座的方法，其包括：
步骤a，设置由可透过至少一种激光光束波长的材料制成的连接支座，所述支座设有至少一个第一面，所述第一面带有与所述元件的所述连接端子相配合的接受端子，所述接受端子包括无需填加材料就能够焊接到所述元件的连接端子的材料。
步骤b，将所述元件设置在所述连接支座的所述第一面上，使所述元件的连接端子与所述支座的所述接受端子重合；
步骤c，通过施加透过所述支座的可透过波长材料的焊接激光光束到所述接受端子，将所述元件的连接端子直接焊接到所述支座的所述接受端子。
支座采用可透过光波的材料使得可以高精确地接近接受端子并可施加焊接所需的能量。应当重视的是在本发明的情况下，焊接是直接将接受端子的材料或多种材料焊接到连接端子的材料或多种材料。换句话，无需熔化材料或附加材料在焊接前放在端子的适当位置。
端子材料最好从镍、铁和/或其合金中选出。这些材料具有能够被激光光束局部强烈加热的特性。可进行快速焊接而不会有大量的热散发到连接支架。这使得支座使用相对易碎的材料成为可能。此外，焊接主要限制在接受激光光束的接受件和接触端子。
对加热非常敏感的支座，当然可以采用其它的材料来制造接触或接受端子。
接受端子焊接到连接端子可一步步进行焊接。在这种情况下，对互相面对的不同对的端子一个接一个地进行焊接。使用激光光束实际上允许只焊接大约一微秒长的时间。或者，也可以同时焊接多个对的端子。这可以伴随全息技术来进行，全息技术可使支座根据对应于端子的全息图案来接受激光。如引言部分所示，本发明可有利地用于互连各种元件和包装元件。
在第一种情况下，即元件互连的情况下，可以连接多个元件到设有连接轨条可选择性地连接不同接受端子到一起的同一支座上。
连接轨条因此可电连接同一元件或不同元件的端子到一起。还可用于连接元件到电源和/或设置在连接支座上的信号输入/输出端子。
在涉及元件包装的应用中，本发明的方法可用于连接元件到中间支座。如在引言部分所提到的，中间支座可以有保护元件的作用，重新分配接触端子的作用，以便使端子的间距适合与接受支座；最后还有减少由于机械接触的元件热膨胀系数不同造成的机械应力的作用。
具体来讲，中间连接支座的材料可从热膨胀系数高于元件的热膨胀系数但低于最后接受支座的热膨胀系数的材料中选择，其中带有中间支座的最后支座元件必须连接到最后接受支座。用作中间支座的连接支座可以有利地用溶凝胶型材料来制造。这些材料的热膨胀系数实际上容易进行控制。另外，熔凝胶材料允许形成的连接支座的朝着元件的表面至少部分地具有相同形状。例如，溶凝胶制成的中间支座可影响到元件的实施。
中间支座可使其表面相对带有多个第二端子分别连接到接受端子的元件，例如，通过金属孔。可使第二端子的间距适合于最后的元件需要衔接的连接支座。
根据本方法的具体实施，第二端子在平行第一和第二面的平面上偏置于接受端子。这允许通过第二面和与其正交的激光光束可以使用。在这种情况下，激光光束穿过支座的最小厚度。
为了得到各自与中间支座相连的多个元件，同一主基底的元件可以连接到连接支座，然后主基底和连接支座可以伴随形式进行切割。切割可形成分别固定在连接支座上的元件，连接支座的尺寸调整到适合元件。各个元件仍可以各自连接到中间支座。
最后，本发明涉及一种装置，其包括至少一个带有连接端子的元件和带有接受端子的连接支座。根据本发明，连接支座是可透光的，所述接受端子(16)包括无需填加材料就能够焊接到所述连接端子的材料，接受端子直接焊接到连接端子上。
附图说明
本发明将参考附图中显示了本发明示例性的且本发明并不局限于的实施例加以介绍。
图1是根据本发明的元件和用作中间支座的连接支座的示意性剖视图，并显示了连接方法的步骤；
图2是元件和用作各种元件互相连接的连接支座的示意性剖视图。
具体实施方式
在下面的介绍中，各图中相同的，类似的或等效的部件采用相同的标号。此外，为了图形的清楚起见，所显示的各部件未以相同的比例绘出。
图1显示了连接到中间连接支座10的电子元件12，例如芯片。中间连接支座10例如是一片玻璃，在其朝向元件的第一面14上设有多个接受端子16。接受端子的位置与元件12的接触端子18的分布图形重合。这些图形分布在元件朝向中间支座的表面上。还可以看到元件12和中间支座10的相对设置是使各连接端子18与一个接受端子16相接触。为了清楚起见，图中只显示了两对端子。然而，在元件和支座上可以设置多很多的端子。
中间连接支座在相对第一表面的第二表面24上还设有第二端子26。第二面上的各个第二端子26通过穿过绝缘的支座的金属化孔30分别连接到第一表面上的各个接受端子16。如果需要的话端子可通过导电轨条延伸和连接到金属化的孔。
在连接支座制造端子和导电轨条或金属化的孔涉及到众所周知的技术。具体来讲，形成轨条和金属化可通过沉积、平版印刷和蚀刻，通过电化学生长或丝网印刷术。各种技术还可以用于形成穿过支座的孔。这些技术可根据支座的材料来采用。最可能采用蚀刻技术或激光加工技术。用激光加工玻璃可以比如形成直径可小于30微米的孔。
当元件12设置在支座10上，如图1所示，可进行焊接将接受端子16焊接到元件的连接端子18。用箭头L示意性显示的激光光束穿过连接支座10施加到接受端子16。连接支座实际上具有激光辐射可穿过的特性。因此，其提供了不需考虑元件或相邻元件的尺寸与接受端子相接触。焊接是直接在接受端子的材料和元件的接触端子的材料之间进行焊接。换句话，焊接是局部焊接，不需要添加金属，在端子之间不需要任何中间熔化材料。
第二面24上的端子26最好是横向偏置于接受端子16。这样可允许使用的激光光束以一般的入射角进入支座。
激光光束可连续地施加到各个待焊接的端子，或集体地施加到多个端子。
标记32表示设置在元件和中间支座之间的元件保护材料。该材料可以是液体材料，如环氧树脂，可以通过毛细吸引力引入，然后固化。该材料的作用是保护元件和连接端子免于任何化学品和/或大气的侵蚀。还可以通过部分地使端子免于受到这些部件之间存在的力来帮助确保元件和中间支座之间有很好的机械接触。最后，在元件是光电型元件时，保护材料32还可以用作光导。
在图1所示的连接支座的具体应用中，在平行于连接平面上的尺寸基本上调节到元件的尺寸。这个特征可通过伴随着对包括元件的基底和提供支座的基底进行切割来得到。这可以在紧凑性方面具有重要的优点，特别是对于手提电话等设备。在正交于连接平面上同样可得到很好的紧凑性，因为不存在熔化材料球。
带有中间支座的元件然后可以连接到印制电路板或另外的互连支座。这样的连接可根据本发明进行，或以传统的方式通过熔化材料球进行。这种球和互相连接支座用虚线圈出用以说明。
图2显示了元件12连接到互相连接支座10。
元件12在没有任何端子的表面上设有连接到导电铜框架52的芯片50。导电框架具有一定数量的互相绝缘的具有导电接线片18形式的延伸部分。导电接线片设置在框架52的周边并连接到芯片50的端子56。端子56位于元件相对框架的表面。接线片18连接到端子56是通过众所周知的引线形式进行的。
绝缘材料58用来模压在芯片和导电框架上。绝缘材料58在导电接线片18之间延伸，但是不覆盖其相对芯片的表面。同样不覆盖位于芯片下的框架部分。
框架52和导电接线片的的暴露表面被例如电镀镍来覆盖。
与图1类似，互相连接支座10是由焊接激光光束可透过的材料制成，在其朝着元件的表面上设有延伸成导电轨条16a的接受端子16。在图2的特定的实施例中，端子和轨条只是设置在支座10的一个表面上。
接受端子与导电接线片18接触，在这里接线片具有与图1所示元件的连接端子的相同作用。
标记L表示的激光焊接也穿过支座10进行，利用了支座透光的性质。
连接到同一互相连接支座的其它元件用虚线显示。可以看出作为互连支座的接受端子的延伸的导电轨条16a也焊接到另一元件的导电接线片，因此提供了元件的电的互相连接。
引用的文献：(1)EP-0-918-354-A
            (2)EP-0-955-676-A
            (3)JP-10 032 224-A
            (4)WO-98 33 211-A
            (5)WO-00 11 715-A
            (6)JP-0 7094 845-A
            (7)JP-10 022 328-A
            (8)US-4 023 005-A
            (9)US-5 829 125-A
            (10)WO-00-55 925-A

Claims (15)

1.一种将带有多个电连接端子(18)的至少一个元件(12)连接到连接支座(10)的方法，其包括：
步骤a，设置由可透过至少一种激光光束波长的材料制成的连接支座(10)，所述支座设有至少一个第一面(14)，所述第一面带有与所述元件的所述连接端子(18)相配合的接受端子(16)，所述接受端子(16)包括无需填加材料就能够焊接到所述元件的连接端子的材料；
步骤b，所述元件(12)设置在所述连接支座(10)的所述第一面(14)上，使所述元件的连接端子与所述支座的所述接受端子(16)重合；
步骤c，通过施加透过所述支座的可透过波长材料的焊接激光光束(L)到所述接受端子，将所述元件的连接端子直接焊接到所述支座的所述接受端子。
2.根据权利要求1所述的方法，其特征在于，将多个元件连接到所述同一支座，所述支座设置了可选择地连接接受端子的连接轨条(16a)。
3.根据权利要求1所述的方法，其特征在于，将所述至少一个元件(12)连接到连接支座(10)的与所述第一面(14)相对的第二面(24)上，所述第二面带有多个第二端子(26)，分别连接到所述第一面的接受端子(16)。
4.根据权利要求3所述的方法，其特征在于，使所述第二端子(26)在平行于所述第一和第二面的平面上横向偏置于所述接受端子(16)，允许使用穿过所述第二面并与其正交的焊接激光光束(L)。
5.根据权利要求1所述的方法，其特征在于，将多个固定在一个同一基底的元件连接到连接支座，所述基底和连接支座在连接后伴随着切割，以将固定到所述连接支座的元件界定成为调整尺寸。
6.根据权利要求1所述的方法，其特征在于，所述步骤a包括用从玻璃和溶凝胶型材料中选出的材料制成连接支座(10)，然后在所述支座上设置接受端子。
7.根据权利要求6所述的方法，其特征在于，所述方法包括在所述用溶凝胶制成的支座设置第一面，其至少部分与所述元件的形状相同。
8.根据权利要求1所述的方法，其特征在于，所述步骤a包括用热膨胀系数大于或等于所述元件的热膨胀系数的材料制成连接支座。
9.根据权利要求1所述的方法，其特征在于，所述接受端子(16)用从镍、铁和/或其合金中选出的材料制成。
10.根据权利要求1所述的方法，其特征在于，所述方法还包括在步骤c后，在所述连接支座和所述元件之间设置保护材料(32)。
11.根据权利要求1所述的方法，其特征在于，所述接受端子(16)焊接到所述连接端子(18)是一步步焊接的。
12.根据权利要求1所述的方法，其特征在于，所述接受端子(16)焊接到所述连接端子(18)是集体全息图形焊接。
13.一种包括带有连接端子(18)的至少一个元件(12)和带有接受端子(16)的连接支座(10)的装置，其特征在于，所述连接支座(10)是可透光的，所述接受端子(16)包括无需填加材料就能够焊接到所述连接端子的材料，所述接受端子直接焊接在所述连接端子。
14.根据权利要求13所述的装置，其特征在于，所述连接支座(10)的尺寸基本上调整到所述元件(12)的尺寸。
15.根据权利要求13所述的装置，其特征在于，所述元件(12)包括用导电接线片连接到金属化的支撑框架(52)的模压芯片(50)，所述接线片形成所述连接端子(18)。
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10348253B3 (de) * 2003-10-16 2005-02-17 Robert Bosch Gmbh Verfahren zum Einkleben eines Chips in ein Premold-Gehäuse und zugehöringe Vorrichtung
US20050169346A1 (en) * 2004-01-29 2005-08-04 Trw Automotive U.S. Llc Method for monitoring quality of a transmissive laser weld
FR2866990B1 (fr) * 2004-02-27 2006-07-28 Tyco Electronics France Sas Grille de connexion a fusible integre, son procede de fabrication et systeme pour la mise en oeuvre de ce procede
US20060000814A1 (en) * 2004-06-30 2006-01-05 Bo Gu Laser-based method and system for processing targeted surface material and article produced thereby
DE102008021167B3 (de) 2008-04-28 2010-01-21 Siemens Aktiengesellschaft Verfahren zur Erzeugung einer hermetisch dichten, elektrischen Durchführung mittels exothermer Nanofolie und damit hergestellte Vorrichtung
US20140047319A1 (en) * 2012-08-13 2014-02-13 Sap Ag Context injection and extraction in xml documents based on common sparse templates
US20230069855A1 (en) * 2021-09-03 2023-03-09 Neuralink Corp Glass welding through non-flat surface

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023005A (en) 1975-04-21 1977-05-10 Raytheon Company Laser welding high reflectivity metals
US4160234A (en) * 1976-03-29 1979-07-03 Gould Inc. Abnormal tire condition sensing system
US4384482A (en) * 1979-11-27 1983-05-24 Imperial Clevite Inc. Vibrating transducer power supply for use in abnormal tire condition warning systems
US4389884A (en) * 1981-06-15 1983-06-28 Gianluigi Agulia Remote tire pressure indicator
US4504761A (en) * 1981-12-28 1985-03-12 Triplett Charles G Vehicular mounted piezoelectric generator
US5226052A (en) * 1990-05-08 1993-07-06 Rohm, Ltd. Laser diode system for cutting off the environment from the laser diode
US5292559A (en) * 1992-01-10 1994-03-08 Amp Incorporated Laser transfer process
JPH0737911A (ja) * 1993-07-19 1995-02-07 Mitsubishi Electric Corp 半導体素子のダイボンド装置、及びダイボンド方法
JPH0794845A (ja) 1993-09-20 1995-04-07 Toppan Printing Co Ltd 半導体素子搭載用基板および半導体装置
DE19549635B4 (de) 1995-02-15 2004-12-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Verbindung eines flexiblen Substrats mit einem Chip
JP3285294B2 (ja) 1995-08-08 2002-05-27 太陽誘電株式会社 回路モジュールの製造方法
JPH1022328A (ja) 1996-07-08 1998-01-23 Toshiba Corp ボンディング方法及びその装置
JPH1032224A (ja) 1996-07-15 1998-02-03 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
DE19702186C2 (de) 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren zur Gehäusung von integrierten Schaltkreisen
FR2764241B1 (fr) * 1997-06-10 1999-08-20 Dassault Electronique Surveillance d'un pneumatique par mesure d'acceleration
DE19728419A1 (de) * 1997-07-03 1999-02-04 Continental Ag Verfahren zur Bestimmung der Umdrehungszahl eines sich um eine Drehachse drehenden Körpers und Körper, der um eine Drehachse drehbar gelagert ist
US6730541B2 (en) 1997-11-20 2004-05-04 Texas Instruments Incorporated Wafer-scale assembly of chip-size packages
DE19751487A1 (de) 1997-11-20 1999-06-02 Pac Tech Gmbh Verfahren und Vorrichtung zur thermischen Verbindung von Anschlußflächen zweier Substrate
US6432744B1 (en) 1997-11-20 2002-08-13 Texas Instruments Incorporated Wafer-scale assembly of chip-size packages
EP1069618B1 (en) * 1998-04-01 2005-09-07 Ricoh Company, Ltd. Semiconductor device and manufacture thereof
DE59915167D1 (de) 1998-08-21 2010-06-24 Infineon Technologies Ag Verfahren zur herstellung von integrierten schaltkreisen
US6392778B1 (en) 1999-03-17 2002-05-21 Koninklijke Philips Electronics N.V. Opto-electronic element
US6561018B2 (en) * 1999-11-18 2003-05-13 Pirelli Pneumatici S.P.A. Method and device for monitoring the instantaneous behavior of a tire during the running of a motor vehicle
FR2807363B1 (fr) * 2000-04-07 2003-02-07 Trw France Capteur de mesure de parametre de pneumatique et systeme de mesure en comportant application
AU2001260201A1 (en) * 2000-04-18 2001-10-30 Pirelli Pneumatici S.P.A. Piezoelectric generator for sensors inside vehicle tyres

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US20030010759A1 (en) 2003-01-16
KR20030007026A (ko) 2003-01-23

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