CN1278185C - 正性光致抗蚀剂组合物及抗蚀图形的形成方法 - Google Patents

正性光致抗蚀剂组合物及抗蚀图形的形成方法 Download PDF

Info

Publication number
CN1278185C
CN1278185C CNB031430791A CN03143079A CN1278185C CN 1278185 C CN1278185 C CN 1278185C CN B031430791 A CNB031430791 A CN B031430791A CN 03143079 A CN03143079 A CN 03143079A CN 1278185 C CN1278185 C CN 1278185C
Authority
CN
China
Prior art keywords
composition
resist pattern
hydroxy phenyl
positive photoresist
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031430791A
Other languages
English (en)
Chinese (zh)
Other versions
CN1469199A (zh
Inventor
馆俊聪
片野彰
新仓聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of CN1469199A publication Critical patent/CN1469199A/zh
Application granted granted Critical
Publication of CN1278185C publication Critical patent/CN1278185C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB031430791A 2002-07-10 2003-06-19 正性光致抗蚀剂组合物及抗蚀图形的形成方法 Expired - Fee Related CN1278185C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002201309 2002-07-10
JP2002201309A JP2004045618A (ja) 2002-07-10 2002-07-10 ポジ型ホトレジスト組成物およびレジストパターンの形成方法

Publications (2)

Publication Number Publication Date
CN1469199A CN1469199A (zh) 2004-01-21
CN1278185C true CN1278185C (zh) 2006-10-04

Family

ID=29997137

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031430791A Expired - Fee Related CN1278185C (zh) 2002-07-10 2003-06-19 正性光致抗蚀剂组合物及抗蚀图形的形成方法

Country Status (4)

Country Link
JP (1) JP2004045618A (ko)
KR (1) KR100606631B1 (ko)
CN (1) CN1278185C (ko)
TW (1) TW200401950A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101200140B1 (ko) * 2009-08-31 2012-11-12 금호석유화학 주식회사 포지티브형 감광성 조성물
JP5808155B2 (ja) * 2011-05-31 2015-11-10 旭化成イーマテリアルズ株式会社 フェノール樹脂組成物並びにこれを用いた硬化レリーフパターンの製造方法

Also Published As

Publication number Publication date
KR20040026112A (ko) 2004-03-27
JP2004045618A (ja) 2004-02-12
KR100606631B1 (ko) 2006-07-28
CN1469199A (zh) 2004-01-21
TW200401950A (en) 2004-02-01

Similar Documents

Publication Publication Date Title
CN1296772C (zh) 光致抗蚀剂组合物及用该组合物形成图案的方法
CN100351701C (zh) 排出喷嘴式涂布法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
CN1243283C (zh) 酚醛清漆树脂溶液、正型光致抗蚀剂组合物及其调制方法
CN1564966A (zh) 用于液晶设备的正型光刻胶组合物
JP2003195496A (ja) 液晶表示素子製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
CN1278185C (zh) 正性光致抗蚀剂组合物及抗蚀图形的形成方法
CN1291277C (zh) 正型光致抗蚀剂组合物
JP4101670B2 (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
CN1324401C (zh) 正型光致抗蚀剂组合物以及抗蚀图案的形成方法
CN1310087C (zh) 排出喷嘴式涂敷法用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
CN1211708C (zh) 光刻胶组合物,其制备方法和用其形成图纹的方法
CN1311296C (zh) Lcd制造用正型光致抗蚀剂组合物和抗蚀图的形成方法
CN1235090C (zh) 正型光致抗蚀剂组合物与抗蚀剂图案的形成方法
CN1484095A (zh) 正型光致抗蚀剂组合物及抗蚀图案的形成方法
CN1313882C (zh) 排出喷嘴式涂布法用正型光致抗蚀剂组合物以及抗蚀图的形成方法
JP2004361638A (ja) システムｌｃｄ製造用ポジ型ホトレジスト組成物及びレジストパターン形成方法
CN1300636C (zh) 系统lcd制造用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
CN100347610C (zh) 正型抗蚀剂组合物以及抗蚀图案的形成方法
JP2004191394A (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
JP2004145207A (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
CN1292307C (zh) 系统lcd制造用正型光致抗蚀剂组合物以及抗蚀图案的形成方法
JP2004361637A (ja) Ｌｃｄ製造用ポジ型ホトレジスト組成物及びレジストパターン形成方法
JP2005010753A (ja) システムｌｃｄ製造用ポジ型ホトレジスト組成物及びレジストパターン形成方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee