CN1274870A - 电子束曝光方法 - Google Patents

电子束曝光方法 Download PDF

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Publication number
CN1274870A
CN1274870A CN00107637A CN00107637A CN1274870A CN 1274870 A CN1274870 A CN 1274870A CN 00107637 A CN00107637 A CN 00107637A CN 00107637 A CN00107637 A CN 00107637A CN 1274870 A CN1274870 A CN 1274870A
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CN
China
Prior art keywords
exposure
electron beam
graphing
core
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN00107637A
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English (en)
Chinese (zh)
Inventor
小日向秀夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of CN1274870A publication Critical patent/CN1274870A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
CN00107637A 1999-05-25 2000-05-25 电子束曝光方法 Pending CN1274870A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP145579/1999 1999-05-25
JP11145579A JP2000331926A (ja) 1999-05-25 1999-05-25 電子線露光方法

Publications (1)

Publication Number Publication Date
CN1274870A true CN1274870A (zh) 2000-11-29

Family

ID=15388369

Family Applications (1)

Application Number Title Priority Date Filing Date
CN00107637A Pending CN1274870A (zh) 1999-05-25 2000-05-25 电子束曝光方法

Country Status (4)

Country Link
JP (1) JP2000331926A (ja)
KR (1) KR20000077410A (ja)
CN (1) CN1274870A (ja)
TW (1) TW574631B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101759140A (zh) * 2008-12-24 2010-06-30 中国科学院半导体研究所 一种制备硅纳米结构的方法
CN102023492A (zh) * 2009-09-18 2011-04-20 纽富来科技股份有限公司 带电粒子束描画装置及其邻近效应校正方法
CN102147571A (zh) * 2010-02-05 2011-08-10 台湾积体电路制造股份有限公司 一种微影方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4520426B2 (ja) 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101759140A (zh) * 2008-12-24 2010-06-30 中国科学院半导体研究所 一种制备硅纳米结构的方法
CN101759140B (zh) * 2008-12-24 2013-03-20 中国科学院半导体研究所 一种制备硅纳米结构的方法
CN102023492A (zh) * 2009-09-18 2011-04-20 纽富来科技股份有限公司 带电粒子束描画装置及其邻近效应校正方法
CN102023492B (zh) * 2009-09-18 2013-07-17 纽富来科技股份有限公司 带电粒子束描画装置及其邻近效应校正方法
CN102147571A (zh) * 2010-02-05 2011-08-10 台湾积体电路制造股份有限公司 一种微影方法
CN102147571B (zh) * 2010-02-05 2013-07-10 台湾积体电路制造股份有限公司 一种微影方法

Also Published As

Publication number Publication date
KR20000077410A (ko) 2000-12-26
TW574631B (en) 2004-02-01
JP2000331926A (ja) 2000-11-30

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SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication