KR20000077410A - 전자빔노광방법 - Google Patents

전자빔노광방법 Download PDF

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Publication number
KR20000077410A
KR20000077410A KR1020000028175A KR20000028175A KR20000077410A KR 20000077410 A KR20000077410 A KR 20000077410A KR 1020000028175 A KR1020000028175 A KR 1020000028175A KR 20000028175 A KR20000028175 A KR 20000028175A KR 20000077410 A KR20000077410 A KR 20000077410A
Authority
KR
South Korea
Prior art keywords
pattern
exposure
electron beam
correcting
depiction
Prior art date
Application number
KR1020000028175A
Other languages
English (en)
Korean (ko)
Inventor
고비나타히데오
Original Assignee
가네꼬 히사시
닛본 덴기 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가네꼬 히사시, 닛본 덴기 가부시끼가이샤 filed Critical 가네꼬 히사시
Publication of KR20000077410A publication Critical patent/KR20000077410A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
KR1020000028175A 1999-05-25 2000-05-24 전자빔노광방법 KR20000077410A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11-145579 1999-05-25
JP11145579A JP2000331926A (ja) 1999-05-25 1999-05-25 電子線露光方法

Publications (1)

Publication Number Publication Date
KR20000077410A true KR20000077410A (ko) 2000-12-26

Family

ID=15388369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000028175A KR20000077410A (ko) 1999-05-25 2000-05-24 전자빔노광방법

Country Status (4)

Country Link
JP (1) JP2000331926A (ja)
KR (1) KR20000077410A (ja)
CN (1) CN1274870A (ja)
TW (1) TW574631B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4520426B2 (ja) 2005-07-04 2010-08-04 株式会社ニューフレアテクノロジー 電子ビームのビームドリフト補正方法及び電子ビームの描画方法
CN101759140B (zh) * 2008-12-24 2013-03-20 中国科学院半导体研究所 一种制备硅纳米结构的方法
JP5530688B2 (ja) * 2009-09-18 2014-06-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置およびその近接効果補正方法
US8178280B2 (en) * 2010-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Self-contained proximity effect correction inspiration for advanced lithography (special)

Also Published As

Publication number Publication date
TW574631B (en) 2004-02-01
JP2000331926A (ja) 2000-11-30
CN1274870A (zh) 2000-11-29

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E601 Decision to refuse application