CN1274870A - Electronic beam exposure method - Google Patents
Electronic beam exposure method Download PDFInfo
- Publication number
- CN1274870A CN1274870A CN00107637A CN00107637A CN1274870A CN 1274870 A CN1274870 A CN 1274870A CN 00107637 A CN00107637 A CN 00107637A CN 00107637 A CN00107637 A CN 00107637A CN 1274870 A CN1274870 A CN 1274870A
- Authority
- CN
- China
- Prior art keywords
- exposure
- electron beam
- graphing
- core
- beam exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
In an electron beam exposing method to be used for the manufacture of a semiconductor device, the fluctuation of the pattern dimension of the central part of a plotting pattern formed due to the difference of the density of the plotting pattern is corrected by the adjustment of exposure, and the fluctuation of the pattern dimension of the edge part of the plotting pattern formed due to the difference of the density of the plotting pattern is corrected by an auxiliary exposure pattern 4. The fluctuation correction of the pattern dimension by the adjustment of the exposure and the fluctuation correction of the pattern dimension by the auxiliary exposure pattern is operated by using two or one mask.
Description
The electron beam exposure method that the present invention relates to be used for producing the semiconductor devices particularly is applicable to the electron beam exposure method of the proximity effect of revising repeatedly repetitive pattern etc.
In recent years, in production process of semiconductor device, adopted the electron beam exposure method to form figure.But when forming figures,, therefore, cause the dimension of picture of the center section of figure and end different because proximity effect can take place in the scattering of electron beam with these electron beam exposure methods.
Up to the present, multiple proximity effect modification method has been proposed in the prior art, so that by suppressing to obtain the predetermined pattern size owing to the dimension of picture deviation that proximity effect causes.In these proximity effect modification methods, the proximity effect revised law that utilizes exposure compensating, GHOST method are arranged or the figure of opposite tone is defocused the mask bias method etc. of the scope of backscattering diameter.
In these proximity effect revised laws, the GHOST method is a kind of method that can be applicable to large tracts of land transfer printing (transfer) exposure system.Fig. 8 is the synoptic diagram of the arrangement of display unit array, and Fig. 9 is the synoptic diagram of showing with the figure of conventional GHOST method correction proximity effect.As shown in Figure 8,, as shown in Figure 9, and use the bundle that defocuses the backscattering diameter range, revise proximity effect repeatedly during the proximity effect of repetitive pattern 100, utilizing to produce the mask that opposite color is changed the line map shape 102 with the correction of GHOST method.In addition, the dotted line among Fig. 8 and 9 is all represented the border 101 of electron exposure bombardment.
Yet in the conventional large tracts of land transfer printing exposure system of repetitive pattern 100 repeatedly, if utilize the whole opposite color shape 102 of changing the line map to carry out the proximity effect correction with the GHOST method, the whole opposite color shape 102 of changing the line map will be formed in the mask correction.Therefore, the hole area of mask correction becomes big.Specifically, if adopt the die board mask that forms the hole in the position that electron beam will pass through, then exist mask intensity and become the problem that descends greatly with interporal lacuna.In addition, owing to can not form hole in the die board mask with closed figure, so, be exposed the full annular periphery that the district surrounds owing to can not form unexposed figure, also exist the problem that is difficult to accurately form the auxiliary exposure figure.
In addition, when the proximity effect correction of having only the exposure of utilizing is applied to the large tracts of land transfer printing, because under the situation of figure with big picture surface density, cell array part for example, compare with the backscattering diameter, beam dimensions is quite big, and it is big that round-off error between two figures becomes, so also exist the problem that can not revise the proximity effect that caused by backscattering (dimension of picture is different between core and end).
The purpose of this invention is to provide a kind of electron beam exposure method, even the transfer printing area is big, also can be with the high precision correction proximity effect of repetitive pattern repeatedly.
The electron beam exposure method of the present invention that is used for the semiconductor devices manufacturing may further comprise the steps: select the graphing that needs are revised; Select a plurality of exposure area of bombardment that comprise selected graphing; Revise core, with the electron beam exposure amount of the core of determining to be suitable for graphing; Revise the end to form the auxiliary exposure figure, this auxiliary exposure figure is used to revise the deviation of graphing end pattern size.
To detailed introduction of the present invention, it is clearer that above and other objects of the present invention, characteristics and advantage will become below in conjunction with accompanying drawing in reference, wherein:
Fig. 1 is a synoptic diagram of showing the semiconductor circuit figure of the electron beam exposure method formation that utilizes one embodiment of the invention;
Fig. 2 is the synoptic diagram of the cell array figure selected by data processing;
Before Fig. 3 A is the less figure correction in the interval between every line of displaying and the space, the curve map that exposure intensity distributes, exposure intensity is the longitudinal axis, and the position is a transverse axis, and Fig. 3 B shows the curve map of revising the post-exposure intensity distributions;
Before Fig. 4 A is the bigger figure correction in the interval between every line of displaying and the space, the curve map that exposure intensity distributes, exposure intensity is the longitudinal axis, and the position is a transverse axis, and Fig. 4 B shows the curve map of revising the post-exposure intensity distributions;
Fig. 5 is a synoptic diagram of showing the single array pattern with auxiliary exposure figure;
Fig. 6 is near the exposure intensity distribution of display unit array portion and the curve map of auxiliary exposure intensity distributions, and exposure intensity is the longitudinal axis, and the position is a transverse axis;
Fig. 7 is near the exposure intensity distribution of display unit array portion and the curve map of auxiliary exposure intensity distributions, and exposure intensity is the longitudinal axis, and the position is a transverse axis;
Fig. 8 is the synoptic diagram of the arrangement of display unit array;
Fig. 9 shows to utilize conventional GHOST method to revise the synoptic diagram of the figure of proximity effect.
Introduce the electron beam exposure method of the embodiment of the invention in detail below in conjunction with accompanying drawing.
Among this embodiment, as shown in Figure 1, the semiconductor circuit figure has a repeated cell array part 1 of figure and from this cell array part 1 extended lead-in wire 2.At first, in this cell array 1, select by data processing and to wish the accurate cell array figure 3 of size height, as shown in Figure 2.In this step,, then select each in a plurality of cell array figures respectively if there are a plurality of cell array figures.
To be selected the cell array figure in order drawing, to need a plurality of exposure area of bombardment (exposure area of bombardment :), as shown in Figure 2 with a district that exposure beam exposed.Next step is selected to drafting and is selected the needed exposure area of bombardment of cell array figure.At this moment, between each exposure area of bombardment, there is electron beam exposure bombardment border 5.
Then, with the exposure to the core of cell array figure 3 of proximity effect maximum, be defined as exposing and draw the exposure that is selected the needed a plurality of exposure area of bombardment of cell array figure.Utilize first mask, the graphic plotting of a plurality of exposure area of bombardment that are selected with determined this exposure.
If a plurality of cell array figures are arranged, in some cases, the dimension of picture of each cell array figure has nothing in common with each other.Among the present invention, owing to selected the exposure area of bombardment for each cell array figure, can be with suitable exposure, the exposure area of bombardment of each cell array figure that exposes.So shown in Fig. 3 A and 4A, between the thick two kinds of situations of situation that the figure that is made of line and space is meticulous and figure, because the exposure intensity difference r that backscattering causes also is different, therefore, the optimum exposure under two kinds of situations is also different.
According to the present invention, shown in Fig. 3 B and 4B, can be according to each cell array figure, exposure is controlled at middle part figure live width corresponding exposure with the cell array part 1 of proximity effect maximum.
Yet, only use this method, can not revise the whole dimension deviation that causes by proximity effect in the cell array part 1.
For this reason, the present invention also has the step of carrying out the end size correction.As shown in Figure 5, form another auxiliary exposure mask, wherein place, form the auxiliary exposure figure 4 in hole with preset width at the outer of cell array figure 3.After the drafting, similar by on cell array figure 3, aiming at this auxiliary exposure mask with the GHOST method, utilize the electron beam that defocuses the backscattering diameter range, carry out auxiliary exposure.Utilize this exposure method.As shown in Figure 6, carry out the distribute bottom of (energy distribution) of exposure intensity that the backscattering of electron beam of the exposure of auxiliary exposure figure 4 causes promptly distinguishes D and revises by utilization, can revise this proximity effect, exposure intensity is distributed become the exposure intensity distribution shown in the continuous lines, raised dotted line exposure intensity that represent, that changed by place, the end of cell array part 1 proximity effect and distributed.
In addition,,, then can a region D be set, revise size by outer placing at each cell array figure if a plurality of cell array figures are arranged about the size correction of this end.
In the present embodiment, even area is bigger, figure repeatedly repeats, and also can come the deviation of dimension of picture between the core of amending unit array portion 1 and end according to pattern density.Therefore, can accurately revise proximity effect in the extra high cell array part 1 of dimension precision requirement.
In addition, in the present embodiment, only be formed on the outer of cell array part 1 and place owing to be used to revise the auxiliary exposure hole of proximity effect, the figure of the full annular periphery that is surrounded by the unexposed area becomes and lacks than the conventional GHOST method of drawing the phase anti-graphics in the whole exposure region.Therefore, make the auxiliary exposure mask easily.In addition, because the figure of the full annular periphery that is surrounded by the unexposed area becomes seldom, so, even if use die board mask, the also problem that does not exist mask intensity to become strong inadequately.
In addition, in the present embodiment, be defined as depending on the value of the pattern density of cell array part 1 by width, and change this value, can regulate the exposure intensity of auxiliary pattern 4 this hole.In addition, hardly in for example logic figure figures of generation effect, can revise proximity effect in proximity effect by exposure.
Introduce another embodiment of the present invention in detail below in conjunction with accompanying drawing.In addition, among Fig. 7, identical label represent with Fig. 1-6 illustrated embodiment in identical parts, so omitted introduction to them.
Compare with first embodiment, this embodiment is different with first embodiment on the arrangement this point of auxiliary exposure figure 4, shown in the hacures around the cell array figure among Fig. 53, this figure is based upon on the same mask, can when utilizing main exposure drawing unit array pattern 3, utilize the electron beam that does not defocus that this auxiliary exposure figure 4 is exposed similarly.Other is identical with first embodiment.
Among this embodiment, auxiliary exposure figure 4 utilizes the exposure beam identical with cell array figure 3 repeatedly to draw.Therefore, the exposure of auxiliary exposure figure 4 is identical with the exposure of the main exposure of drawing unit array pattern 3, by changing the hole width of auxiliary exposure figure 4, regulates backscattered exposure intensity.So, as shown in Figure 7, by utilizing by carrying out the distribute bottom of (energy distribution) of exposure intensity that the used electron beam back scatter of these auxiliary pattern 4 exposures causes, promptly distinguish D, revise, the exposure intensity of the deviation that the proximity effect in the end shown in the dotted line, that have cell array part 1 causes is distributed, become the exposure intensity shown in the continuous lines and distribute.
In addition, in the present embodiment, by set up auxiliary exposure figure 4 in the mask that forms cell array figure 3, necessary electron beam defocuses in the time of needn't carrying out auxiliary exposure.Therefore, can carry out the main exposure of drawing unit array pattern 3 and the auxiliary exposure of correction proximity effect simultaneously, therefore, can revise proximity effect with the weakness reason time.
Disclosed as above detailed place of matchmakers, in the present invention, by regulating exposure, come the correction pattern core because the dimension of picture deviation that density difference causes between graphing, and utilize the auxiliary exposure figure, come in the correction pattern end because the dimension of picture deviation that density difference causes between graphing can be come the various deviations of correction pattern size by making core and end separate.Therefore, even area is bigger, figure repeatedly repeats, also can high precision correction proximity effect.
Although introduced the present invention in conjunction with specific embodiment, this introduction and not meaning that is construed as limiting.With reference to introduction of the present invention, be understood by those skilled in the art that the various improvement of disclosed embodiment.Therefore, be intended to cover any improvement and the embodiment that falls in the scope of the invention by appended claims.
Claims (8)
1. electron beam exposure method that is used for producing the semiconductor devices may further comprise the steps:
Select the graphing that needs correction;
Select a plurality of exposure area of bombardment that comprise selected graphing;
Revise core, with the electron beam exposure amount of the core of determining to be suitable for described graphing;
Revise the end, to form the auxiliary exposure figure, this auxiliary exposure figure is used to revise the dimension of picture deviation of described graphing end.
2. according to the electron beam exposure method of claim 1, further comprising the steps of: as after the step of revising core, to carry out the exposure first time with first mask; Under aligning has condition corresponding to second mask of the figure of revising the end step, carry out second time and expose.
3. according to the electron beam exposure method of claim 1, further comprising the steps of: after the step of revising core, the single mask with having corresponding to the figure of revising the end step exposes.
4. according to the electron beam exposure method of claim 3, wherein said single mask has graphing, and said auxiliary pattern forms around said graphing.
5. according to the electron beam exposure method of claim 1, further comprising the steps of: as after the step of revising the end, under the condition that used electron beam is defocused its backscattering diameter, to expose.
6. according to the electron beam exposure method of claim 1, wherein said auxiliary exposure figure is the outer figure that the hole is provided of placing at graphing.
7. electron beam exposure method that is used for producing the semiconductor devices may further comprise the steps:
Select the graphing that needs correction;
Select a plurality of exposure area of bombardment that comprise selected graphing;
Revise core, with the electron beam exposure amount of the core of determining to be suitable for said graphing;
Revise the end, be used to be formed in the outer figure that the hole is provided of placing of said graphing, and
Expose with the exposure of in revising said core step, determining.
8. according to the electron beam exposure method of claim 7, further comprising the steps of: after carrying out step of exposure, by utilizing mask corresponding to the figure that in the step of revising said end, forms, electron beam is being defocused under the condition of its backscattering diameter, carry out the exposure second time.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP145579/1999 | 1999-05-25 | ||
| JP11145579A JP2000331926A (en) | 1999-05-25 | 1999-05-25 | Electron beam exposing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1274870A true CN1274870A (en) | 2000-11-29 |
Family
ID=15388369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN00107637A Pending CN1274870A (en) | 1999-05-25 | 2000-05-25 | Electronic beam exposure method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2000331926A (en) |
| KR (1) | KR20000077410A (en) |
| CN (1) | CN1274870A (en) |
| TW (1) | TW574631B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101759140A (en) * | 2008-12-24 | 2010-06-30 | 中国科学院半导体研究所 | Method for manufacturing silicon nano structure |
| CN102023492A (en) * | 2009-09-18 | 2011-04-20 | 纽富来科技股份有限公司 | Charged particle beam drawing apparatus and proximity effect correction method thereof |
| CN102147571A (en) * | 2010-02-05 | 2011-08-10 | 台湾积体电路制造股份有限公司 | Lithography method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4520426B2 (en) | 2005-07-04 | 2010-08-04 | 株式会社ニューフレアテクノロジー | Electron beam drift correction method and electron beam writing method |
-
1999
- 1999-05-25 JP JP11145579A patent/JP2000331926A/en active Pending
-
2000
- 2000-05-23 TW TW89109984A patent/TW574631B/en active
- 2000-05-24 KR KR1020000028175A patent/KR20000077410A/en not_active Application Discontinuation
- 2000-05-25 CN CN00107637A patent/CN1274870A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101759140A (en) * | 2008-12-24 | 2010-06-30 | 中国科学院半导体研究所 | Method for manufacturing silicon nano structure |
| CN101759140B (en) * | 2008-12-24 | 2013-03-20 | 中国科学院半导体研究所 | Method for manufacturing silicon nano structure |
| CN102023492A (en) * | 2009-09-18 | 2011-04-20 | 纽富来科技股份有限公司 | Charged particle beam drawing apparatus and proximity effect correction method thereof |
| CN102023492B (en) * | 2009-09-18 | 2013-07-17 | 纽富来科技股份有限公司 | Charged particle beam drawing apparatus and proximity effect correction method thereof |
| CN102147571A (en) * | 2010-02-05 | 2011-08-10 | 台湾积体电路制造股份有限公司 | Lithography method |
| CN102147571B (en) * | 2010-02-05 | 2013-07-10 | 台湾积体电路制造股份有限公司 | Lithography method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000331926A (en) | 2000-11-30 |
| TW574631B (en) | 2004-02-01 |
| KR20000077410A (en) | 2000-12-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1737680B (en) | Advanced oriented assist features for integrated circuit hole patterns | |
| CN1212658C (en) | Monitoring system and method for monitoring process condition change by electron beam | |
| KR100633461B1 (en) | Method for setting mask pattern and its illumination condition | |
| KR20000076463A (en) | Dynamically adjustable high resolution adjustable slit | |
| EP0104922B1 (en) | Electron beam exposure system | |
| KR100472267B1 (en) | Method for fabrication of mask, mask fabricated by the method and method for fabrication of semiconductor device using the mask | |
| CN1142121A (en) | Method for forming delicate pattern of semi-conductor device | |
| DE112004001942T5 (en) | Combined pattern with trenches | |
| US5897978A (en) | Mask data generating method and mask for an electron beam exposure system | |
| CN1274870A (en) | Electronic beam exposure method | |
| KR20020065851A (en) | Method for correcting optical proximity effects | |
| US7941782B2 (en) | Pattern layout of integrated circuit | |
| JP4918809B2 (en) | Manufacturing method of density distribution mask | |
| JP2874688B2 (en) | Mask and electron beam exposure method using the same | |
| US6352802B1 (en) | Mask for electron beam exposure and method of manufacturing semiconductor device using the same | |
| CN101806997A (en) | Photo mask | |
| JP3080006B2 (en) | Electron beam exposure correction method | |
| KR100273855B1 (en) | Electron beam drawing method using cell projection method and variable shaping beam method together | |
| US5516605A (en) | Photo mask provided with development rate measuring pattern and method for measuring development rate uniformity | |
| CN109739072A (en) | Light shield exposal control method | |
| KR100285925B1 (en) | Method of manufacturing an eb mask for electron beam image drawing and device for manufacturing an eb mask | |
| CN111612862A (en) | Method and system for generating SRAF image and electronic device thereof | |
| US6057249A (en) | Method for improving optical proximity effect in storage node pattern | |
| JP2000122263A (en) | Photomask and its preparation | |
| CN110579937B (en) | Test mask and forming method thereof, and forming device of test mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |