CN1266543C - 用于改进相移掩模成像性能的装置和系统及其方法 - Google Patents

用于改进相移掩模成像性能的装置和系统及其方法 Download PDF

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Publication number
CN1266543C
CN1266543C CNB031226124A CN03122612A CN1266543C CN 1266543 C CN1266543 C CN 1266543C CN B031226124 A CNB031226124 A CN B031226124A CN 03122612 A CN03122612 A CN 03122612A CN 1266543 C CN1266543 C CN 1266543C
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CN
China
Prior art keywords
light
pupil plane
phase
aperture
etching system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031226124A
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English (en)
Chinese (zh)
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CN1453635A (zh
Inventor
哈里·O·西威尔
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ASML Holding NV
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ASML Holding NV
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Publication date
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Publication of CN1453635A publication Critical patent/CN1453635A/zh
Application granted granted Critical
Publication of CN1266543C publication Critical patent/CN1266543C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNB031226124A 2002-03-05 2003-03-05 用于改进相移掩模成像性能的装置和系统及其方法 Expired - Fee Related CN1266543C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36135102P 2002-03-05 2002-03-05
US60/361,351 2002-03-05

Publications (2)

Publication Number Publication Date
CN1453635A CN1453635A (zh) 2003-11-05
CN1266543C true CN1266543C (zh) 2006-07-26

Family

ID=27757780

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031226124A Expired - Fee Related CN1266543C (zh) 2002-03-05 2003-03-05 用于改进相移掩模成像性能的装置和系统及其方法

Country Status (7)

Country Link
US (2) US6967712B2 (enExample)
EP (1) EP1343050A3 (enExample)
JP (2) JP4297703B2 (enExample)
KR (1) KR100808620B1 (enExample)
CN (1) CN1266543C (enExample)
SG (1) SG99416A1 (enExample)
TW (1) TWI274232B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US7438997B2 (en) * 2004-05-14 2008-10-21 Intel Corporation Imaging and devices in lithography
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2004323A (en) * 2009-04-16 2010-10-18 Asml Netherlands Bv Device manufacturing method and lithographic apparatus.
NL2009004A (en) * 2011-07-20 2013-01-22 Asml Netherlands Bv Inspection method and apparatus, and lithographic apparatus.
CN106796406B (zh) * 2014-08-25 2019-08-30 Asml控股股份有限公司 测量方法、测量设备、光刻设备和器件制造方法
JP7193304B2 (ja) * 2018-03-19 2022-12-20 ソニーセミコンダクタソリューションズ株式会社 光源システム、光学回折素子製造方法、および測距システム、ならびに光学回折素子
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062705A (en) * 1989-09-13 1991-11-05 Matsushita Electric Industrial Co., Ltd. Apparatus for evaluating a lens
JP3200894B2 (ja) * 1991-03-05 2001-08-20 株式会社日立製作所 露光方法及びその装置
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
JPH05259025A (ja) * 1992-03-16 1993-10-08 Matsushita Electric Ind Co Ltd 露光装置
DE69224514T2 (de) 1992-03-23 1998-06-18 Erland Torbjoern Moelnlycke Sandstroem Verfahren und Vorrichtung zur Erzeugung eines Bildes
JPH05315226A (ja) * 1992-05-11 1993-11-26 Sony Corp 投影露光装置
JPH07283130A (ja) * 1994-04-14 1995-10-27 Canon Inc 投影露光方法及びそれを用いた投影露光装置
KR0172790B1 (ko) * 1995-09-18 1999-03-20 김영환 위상반전 마스크 및 그 제조방법
JPH10115932A (ja) 1996-10-09 1998-05-06 Mitsubishi Electric Corp 位相シフトマスクを用いた露光方法
TW388004B (en) * 1998-04-03 2000-04-21 United Microelectronics Corp Alternating phase shift mask
JP3123542B2 (ja) * 1998-05-02 2001-01-15 キヤノン株式会社 露光装置及びデバイスの製造方法
US6377337B1 (en) * 1998-05-02 2002-04-23 Canon Kabushiki Kaisha Projection exposure apparatus
EP1143492A4 (en) 1998-09-03 2004-06-02 Nikon Corp EXPOSURE APPARATUS AND METHOD, DEVICE AND METHOD FOR PRODUCING SAID APPARATUS
US6320648B1 (en) * 1998-10-12 2001-11-20 Steven R. J. Brueck Method and apparatus for improving pattern fidelity in diffraction-limited imaging
US6207328B1 (en) * 1999-08-23 2001-03-27 United Microelectronics Corp. Method of forming a phase shift mask
DE10027984B4 (de) * 2000-06-06 2008-10-23 Promos Technologies, Inc. Fotolithografiesystem mit einer Frequenzbereichsfiltermaske

Also Published As

Publication number Publication date
JP2006261696A (ja) 2006-09-28
EP1343050A2 (en) 2003-09-10
TWI274232B (en) 2007-02-21
CN1453635A (zh) 2003-11-05
KR100808620B1 (ko) 2008-02-29
JP4297703B2 (ja) 2009-07-15
KR20040002452A (ko) 2004-01-07
US6967712B2 (en) 2005-11-22
JP4476243B2 (ja) 2010-06-09
TW200304053A (en) 2003-09-16
US20050190355A1 (en) 2005-09-01
SG99416A1 (en) 2003-10-27
US7098995B2 (en) 2006-08-29
US20030219096A1 (en) 2003-11-27
EP1343050A3 (en) 2004-05-19
JP2003257853A (ja) 2003-09-12

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C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: ASML HOLDING CO., LTD.

Free format text: FORMER OWNER: ASML NETHERLAND B.V.

Effective date: 20050304

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Address after: Holland HOFEN feld

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Applicant before: ASML Holland Co., Ltd.

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060726

Termination date: 20160305