SG99416A1 - Apparatus and system for improving phase shift mask imaging performance and associated methods - Google Patents

Apparatus and system for improving phase shift mask imaging performance and associated methods

Info

Publication number
SG99416A1
SG99416A1 SG200301100A SG200301100A SG99416A1 SG 99416 A1 SG99416 A1 SG 99416A1 SG 200301100 A SG200301100 A SG 200301100A SG 200301100 A SG200301100 A SG 200301100A SG 99416 A1 SG99416 A1 SG 99416A1
Authority
SG
Singapore
Prior art keywords
phase shift
shift mask
associated methods
imaging performance
mask imaging
Prior art date
Application number
SG200301100A
Other languages
English (en)
Inventor
O Sewell Harry
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG99416A1 publication Critical patent/SG99416A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200301100A 2002-03-05 2003-03-04 Apparatus and system for improving phase shift mask imaging performance and associated methods SG99416A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36135102P 2002-03-05 2002-03-05

Publications (1)

Publication Number Publication Date
SG99416A1 true SG99416A1 (en) 2003-10-27

Family

ID=27757780

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301100A SG99416A1 (en) 2002-03-05 2003-03-04 Apparatus and system for improving phase shift mask imaging performance and associated methods

Country Status (7)

Country Link
US (2) US6967712B2 (enExample)
EP (1) EP1343050A3 (enExample)
JP (2) JP4297703B2 (enExample)
KR (1) KR100808620B1 (enExample)
CN (1) CN1266543C (enExample)
SG (1) SG99416A1 (enExample)
TW (1) TWI274232B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842223B2 (en) 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
US7438997B2 (en) * 2004-05-14 2008-10-21 Intel Corporation Imaging and devices in lithography
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL2004323A (en) * 2009-04-16 2010-10-18 Asml Netherlands Bv Device manufacturing method and lithographic apparatus.
NL2009004A (en) * 2011-07-20 2013-01-22 Asml Netherlands Bv Inspection method and apparatus, and lithographic apparatus.
CN106796406B (zh) * 2014-08-25 2019-08-30 Asml控股股份有限公司 测量方法、测量设备、光刻设备和器件制造方法
JP7193304B2 (ja) * 2018-03-19 2022-12-20 ソニーセミコンダクタソリューションズ株式会社 光源システム、光学回折素子製造方法、および測距システム、ならびに光学回折素子
CN115202146A (zh) * 2021-04-14 2022-10-18 上海传芯半导体有限公司 移相掩膜版及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05259025A (ja) * 1992-03-16 1993-10-08 Matsushita Electric Ind Co Ltd 露光装置
JPH05315226A (ja) * 1992-05-11 1993-11-26 Sony Corp 投影露光装置
US5329333A (en) * 1991-03-05 1994-07-12 Hitachi, Ltd. Exposure apparatus and method
JPH07283130A (ja) * 1994-04-14 1995-10-27 Canon Inc 投影露光方法及びそれを用いた投影露光装置
JPH10115932A (ja) * 1996-10-09 1998-05-06 Mitsubishi Electric Corp 位相シフトマスクを用いた露光方法
DE10027984A1 (de) * 2000-06-06 2001-12-20 Promos Technologies Inc Fotolithografiesystem mit einer Frequenzbereichsfiltermaske
US6377337B1 (en) * 1998-05-02 2002-04-23 Canon Kabushiki Kaisha Projection exposure apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062705A (en) * 1989-09-13 1991-11-05 Matsushita Electric Industrial Co., Ltd. Apparatus for evaluating a lens
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
DE69224514T2 (de) 1992-03-23 1998-06-18 Erland Torbjoern Moelnlycke Sandstroem Verfahren und Vorrichtung zur Erzeugung eines Bildes
KR0172790B1 (ko) * 1995-09-18 1999-03-20 김영환 위상반전 마스크 및 그 제조방법
TW388004B (en) * 1998-04-03 2000-04-21 United Microelectronics Corp Alternating phase shift mask
JP3123542B2 (ja) * 1998-05-02 2001-01-15 キヤノン株式会社 露光装置及びデバイスの製造方法
EP1143492A4 (en) 1998-09-03 2004-06-02 Nikon Corp EXPOSURE APPARATUS AND METHOD, DEVICE AND METHOD FOR PRODUCING SAID APPARATUS
US6320648B1 (en) * 1998-10-12 2001-11-20 Steven R. J. Brueck Method and apparatus for improving pattern fidelity in diffraction-limited imaging
US6207328B1 (en) * 1999-08-23 2001-03-27 United Microelectronics Corp. Method of forming a phase shift mask

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5329333A (en) * 1991-03-05 1994-07-12 Hitachi, Ltd. Exposure apparatus and method
JPH05259025A (ja) * 1992-03-16 1993-10-08 Matsushita Electric Ind Co Ltd 露光装置
JPH05315226A (ja) * 1992-05-11 1993-11-26 Sony Corp 投影露光装置
JPH07283130A (ja) * 1994-04-14 1995-10-27 Canon Inc 投影露光方法及びそれを用いた投影露光装置
JPH10115932A (ja) * 1996-10-09 1998-05-06 Mitsubishi Electric Corp 位相シフトマスクを用いた露光方法
US6377337B1 (en) * 1998-05-02 2002-04-23 Canon Kabushiki Kaisha Projection exposure apparatus
DE10027984A1 (de) * 2000-06-06 2001-12-20 Promos Technologies Inc Fotolithografiesystem mit einer Frequenzbereichsfiltermaske

Also Published As

Publication number Publication date
JP2006261696A (ja) 2006-09-28
EP1343050A2 (en) 2003-09-10
TWI274232B (en) 2007-02-21
CN1453635A (zh) 2003-11-05
KR100808620B1 (ko) 2008-02-29
JP4297703B2 (ja) 2009-07-15
KR20040002452A (ko) 2004-01-07
US6967712B2 (en) 2005-11-22
JP4476243B2 (ja) 2010-06-09
TW200304053A (en) 2003-09-16
US20050190355A1 (en) 2005-09-01
CN1266543C (zh) 2006-07-26
US7098995B2 (en) 2006-08-29
US20030219096A1 (en) 2003-11-27
EP1343050A3 (en) 2004-05-19
JP2003257853A (ja) 2003-09-12

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