CN1263279A - 显示装置 - Google Patents

显示装置 Download PDF

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CN1263279A
CN1263279A CN00101923A CN00101923A CN1263279A CN 1263279 A CN1263279 A CN 1263279A CN 00101923 A CN00101923 A CN 00101923A CN 00101923 A CN00101923 A CN 00101923A CN 1263279 A CN1263279 A CN 1263279A
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oeld
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oelds
tft
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CN1123799C (zh
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木村睦
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BOE Technology Group Co Ltd
BOE Technology HK Ltd
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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Abstract

本发明的目的在于在下述的显示装置中得到准确的发光部的比,得到准确的灰度,在该显示装置中,在各像素中形成多个TFT和多个OELD,将TFT与OELD串联地连接,通过切换TFT的导通、关断状态,控制使OELD发光的面积,来实现灰度显示。多个OELD的形状各自相同,通过控制使OELD发光的个数,来实现灰度显示。多个OELD的形状是矩形或圆形,在横方向或纵方向上以等间隔进行配置。

Description

显示装置
本发明涉及显示装置，特别是涉及具备由薄膜晶体管(以下，记为TFT)驱动的、用液相工艺形成的高分子系列的有机场致发光元件(以下，记为OELD)的薄膜晶体管驱动的有机场致发光显示装置(以下，记为TFT-OELD)。
TFT-OELD作为实现轻量、薄型、小型、高精细、广视角、低功耗等的显示装置，被认为在将来是很有希望的。图1中示出现有的TFT-OELD，图2中示出其剖面图。在此，只图示了一个像素11，但实际上存在多行、多列的多个像素11。在此，OELD18是高分子系列，利用旋转涂敷、刮板涂、喷墨等液相工艺来形成。
在图1中示出那样的结构情况下为了实现灰度显示，有必要通过使驱动TFT17的栅电压变化从而使电导变化，来控制流过OELD18的电流。但是，如果按照该方式，则特别是在中间灰度的情况下，存在驱动TFT17的晶体管特性的离散性作为OELD18的亮度的离散性表现出来从而画面变得不均匀的问题。
因此，如图3中所示，考虑了通过使OELD18的发光面积变化来实现灰度的方式(特愿平9-233107号)。在图4中示出该方式的驱动方法。对扫描线12施加扫描电位31，信号线13由信号线(低位比特)131和信号线(高位比特)132构成，作为信号电位32分别施加信号电位(低位比特)321和信号电位(高位比特)322。驱动TFT17由驱动TFT(低位比特)171和驱动TFT(高位比特)172构成，OELD18由OELD(低位比特)181和OELD(高位比特)182构成。在该例中，由于考虑了2比特4灰度，故OELD(低位比特)181和OELD(高位比特)182的面积比为1∶2。
在该方式中，驱动TFT17取近似地完全导通状态和近似地完全关断状态这2种状态的任一种状态。在导通状态下，驱动TFT17的电阻与OELD18的电阻相比，小到可忽略，流过驱动TFT17和OELD18的电流基本上只由OELD17的电阻来确定。因此，驱动TFT17的晶体管特性的离散性不作为OELD18的亮度的离散性表现出来。此外，在关断状态下，由于施加到OELD18上的电压为阈值电压以下，故OELD18完全不发光，驱动TFT17的晶体管特性的离散性还是不作为OELD18的亮度的离散性表现出来。
图5是图3和图4中示出的通过使OELD18的发光面积变化来实现灰度显示的TFT-OELD的剖面图。图5(a)是OELD(低位比特)181的剖面图，图5(b)是OELD(高位比特)182的剖面图。希望OELD(低位比特)181的发光部25与OELD(高位比特)182的发光部25的比为1∶2。
发光层22是高分子系列的OELD，由液相工艺来形成。由于堤(bank)24的表面为疏液性，发光层22不残留，故对OELD18进行构图，决定其面积。关于堤24的侧面，其成为疏液性还是亲液性与材料、工艺有关。
在图5中，假定堤24的侧面为亲液性的情况。作为液相工艺特有的现象，发光层22的剖面形状成为被引到堤24的侧面上的剖面形状。此时，电流流过发光层22的比较薄的部分，该部分成为发光部25。在这里所述那样的发光层22的剖面形状对液体的量、液体的物理性质、液体的初始位置、基板的状态、温度、气氛等敏感，难以进行控制。即，难以得到所希望那样的发光面积的绝对值。因此，难以准确地使OELD(低位比特)181的发光部25与OELD(高位比特)182的发光部25的比为1∶2，结果，难以得到准确的灰度。
图6是与图5同样的OELD(低位比特)181的剖面图(图6(a))和OELD(高位比特)182的剖面图(图6(b))。在图6中，假定堤24的侧面为疏液性的情况。作为液相工艺特有的现象，发光层22的剖面形状成为远离堤24的侧面的剖面形状。此时，电流也流过发光层22的比较薄的部分，该部分成为发光部25。此时，与图5的情况同样，也难以准确地使OELD(低位比特)181的发光部25与OELD(高位比特)182的发光部25的比为1∶2，难以得到准确的灰度。
因此，本发明的目的是得到准确的发光部25的比，得到准确的灰度。
(1)本发明的第1方面是一种显示装置，在该显示装置中，在各像素中形成多个TFT和多个OELD，将TFT与OELD串联地连接，通过切换TFT的导通、关断状态，控制使OELD发光的面积，来实现灰度显示，其特征在于：多个OELD的形状分别相同，通过控制使OELD发光的个数，来实现灰度显示。
按照本结构，作为液相工艺特有的现象，即使在成为被引到堤的侧面上的剖面形状或成为远离堤的侧面的剖面形状的情况下，也可使各OELD的发光部的面积相同，可得到准确的灰度。之所以如此，是因为在本结构中，虽然难以得到所希望那样的发光面积的绝对值，但由于多个OELD的发光面积互相相等，故通过控制其个数可得到准确的发光面积的比。
(2)本发明的第2方面是本发明的第1方面中所述的显示装置，其特征在于：多个OELD的形状是圆形。
按照本结构，可更准确地使各OELD的发光部的面积相同，可得到准确的灰度。其原因如下所述。在OELD的形状为具有矩形等的顶点的形状的情况下，存在发生OELD被引到该顶点部或不能填满顶点部等的现象的可能性。该现象由于与上述的剖面形状的问题相同的原因，成为得到准确的灰度的妨碍。该现象与上述的剖面形状的问题相比，对液体的量、液体的物理性质、液体的初始位置、基板的状态、温度、气氛等更为敏感，即使在相邻的OELD间也难以进行控制。通过将OELD作成圆形，可回避该现象。
(3)本发明的第3方面是本发明的第1方面中所述的显示装置，其特征在于：在横方向或纵方向上以等间隔配置了多个OELD。
按照本结构，可更准确地使各OELD的发光部的面积相同，可得到准确的灰度。其原因如下所述。在使用旋转涂敷、刮板涂来形成OELD时，一度被涂敷到整个像素上的发光层由于堤表面的疏液性自然地流入堤的凹部。在使用喷墨法的情况下，有时也成为这种情况。此时，在堤凹部的周围的凸部的面积较宽的情况下，由于被涂敷到该部分上的发光层全部流入到堤凹部上，故发光层变厚。在堤凹部的周围的凸部的面积较窄的情况下，发光层变薄。结果，发生发光层的膜厚的离散性。通过在横方向或纵方向上以等间隔配置多个OELD，可回避该离散性。
此外，按照本结构，在利用喷墨工艺形成OELD的情况下，由于以等间隔喷出墨水即可，故具有制造变得简单的可能性。
图1是示出现有的通过使TFT的电导变化来实现灰度显示的TFT-OELD的像素的图。
图2是TFT～OELD的剖面图。
图3是示出现有的通过使OELD的发光面积变化来实现灰度显示的TFT-OELD的像素的图。
图4是示出现有的通过使OELD的发光面积变化来实现灰度显示的TFT-OELD的驱动方法的图。
图5是现有的通过使OELD的发光面积变化来实现灰度显示的TFT-OELD中的OELD的剖面图(堤侧面为亲液性的情况)。(a)OELD(低位比特)的图，(b)OELD(高位比特)的图。
图6是现有的通过使OELD的发光面积变化来实现灰度显示的TFT-OELD中的OELD的剖面图(堤侧面为疏液性的情况)。(a)OELD(低位比特)的图，(b)OELD(高位比特)的图。
图7是示出与本发明的实施例1有关的TFT-OELD的像素的图。
图8是示出与本发明的实施例2有关的TFT-OELD的像素的图。
图9是示出与本发明的实施例3有关的TFT-OELD的像素的图。
以下，根据附图说明本发明的优选实施例。
(实施例1)
图7是示出与本发明的实施例1有关的TFT-OELD的像素的图。在此，只图示了一个像素11，但实际上存在多行、多列的多个像素11。
OELD(低位比特)181由OELD(低位比特、矩形)1811构成，OELD(高位比特)182由OELD(高位比特、第1矩形)18211和OELD(高位比特、第2矩形)18221构成。如本发明的第1方面中所示，由于将OELD(低位比特、矩形)1811、OELD(高位比特、第1矩形)18211和OELD(高位比特、第2矩形)18221作成相同的形状，故可得到相同的发光面积，通过使发光的OELD18的个数变化，可得到准确的灰度。
(实施例2)
图8是示出与本发明的实施例2有关的TFT-OELD的像素的图。在此，只图示了一个像素11，但实际上存在多行、多列的多个像素11。
OELD(低位比特)181由OELD(低位比特、圆形)1812构成，OELD(高位比特)182由OELD(高位比特、第1圆形)18212和OELD(高位比特、第2圆形)18222构成。如本发明的第2方面中所示，由于将OELD(低位比特、圆形)1812、OELD(高位比特、第1圆形)18212和OELD(高位比特、第2圆形)18222作成圆形，故可更准确地得到相同的发光面积，可得到准确的灰度。
(实施例3)
图9是示出与本发明的实施例3有关的TFT-OELD的像素的图。在此，只图示了一个像素11，但实际上存在多行、多列的多个像素11。
OELD(低位比特)181由OELD(低位比特、圆形)1812构成，OELD(高位比特)182由OELD(高位比特、第1圆形)18212和OELD(高位比特、第2圆形)18222构成。如本发明的第3方面中所示，不仅在该像素11的内部，而且相对于邻接的像素11，也在横方向和纵方向上以等间隔配置了OELD(低位比特、圆形)1812、OELD(高位比特、第1圆形)18212和OELD(高位比特、第2圆形)18222。因此，可更准确地将各OELD的发光部的面积作成相同的面积，可得到准确的灰度。
再有，作为在各像素中被形成的EL元件，在实施例1中，以矩形的元件为例来示出，在实施例2、3中，示出了圆形的元件，但本发明不限定于此，即使在多角形或椭圆形的元件的情况下也能得到准确的灰度。特别是，椭圆形的元件与圆形的情况相同，由于没有在作成矩形时的顶点部，故完全没有不能用发光层来填满顶点部这样的问题。
如上所述，按照本发明，通过控制使场致发光元件发光的发光部面积，可实现准确的灰度。

Claims (3)

1.一种显示装置，在该显示装置中，在各像素中形成多个薄膜晶体管和多个有机场致发光元件，将上述薄膜晶体管与上述有机场致发光元件串联地连接，通过切换上述薄膜晶体管的导通、关断状态，控制使上述有机场致发光元件发光的面积，来实现灰度显示，其特征在于：
多个上述有机场致发光元件的形状各自相同，通过控制使上述有机场致发光元件发光的个数，来实现灰度显示。
2.如权利要求1中所述的显示装置，其特征在于：
多个上述有机场致发光元件的形状是圆形。
3.如权利要求1中所述的显示装置，其特征在于：
在横方向或纵方向上以等间隔配置了多个上述有机场致发光元件。
CN00101923A 1999-01-29 2000-01-28 显示装置 Expired - Lifetime CN1123799C (zh)

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JP21623/1999 1999-01-29
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JP30144899A JP4092827B2 (ja) 1999-01-29 1999-10-22 表示装置

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US20020105280A1 (en) 2002-08-08
DE60004574T2 (de) 2004-02-26
EP1024472B1 (en) 2003-08-20
US6225750B1 (en) 2001-05-01
EP1288903A3 (en) 2003-06-25
CN1123799C (zh) 2003-10-08
JP4092827B2 (ja) 2008-05-28
KR100664450B1 (ko) 2007-01-04
US6642665B2 (en) 2003-11-04
EP1024472A2 (en) 2000-08-02
KR20000053629A (ko) 2000-08-25
US6469450B2 (en) 2002-10-22
EP1024472A3 (en) 2000-11-15
DE60004574D1 (de) 2003-09-25
US20020011793A1 (en) 2002-01-31
KR100467905B1 (ko) 2005-01-24
US20020195969A1 (en) 2002-12-26
EP1288903A2 (en) 2003-03-05
KR20000052429A (ko) 2000-08-25
US6388389B2 (en) 2002-05-14

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