CN1259710C - 在低介电材料层与内连线间形成阻障层的方法 - Google Patents
在低介电材料层与内连线间形成阻障层的方法 Download PDFInfo
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- CN1259710C CN1259710C CN02131620.1A CN02131620A CN1259710C CN 1259710 C CN1259710 C CN 1259710C CN 02131620 A CN02131620 A CN 02131620A CN 1259710 C CN1259710 C CN 1259710C
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- layer
- low dielectric
- dielectric material
- material layer
- capping
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CN02131620.1A CN1259710C (zh) | 2002-09-11 | 2002-09-11 | 在低介电材料层与内连线间形成阻障层的方法 |
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CN02131620.1A CN1259710C (zh) | 2002-09-11 | 2002-09-11 | 在低介电材料层与内连线间形成阻障层的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1482665A CN1482665A (zh) | 2004-03-17 |
CN1259710C true CN1259710C (zh) | 2006-06-14 |
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CN02131620.1A Expired - Lifetime CN1259710C (zh) | 2002-09-11 | 2002-09-11 | 在低介电材料层与内连线间形成阻障层的方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7220687B2 (en) * | 2004-06-25 | 2007-05-22 | Applied Materials, Inc. | Method to improve water-barrier performance by changing film surface morphology |
WO2013123431A1 (en) | 2012-02-15 | 2013-08-22 | Applied Materials, Inc. | Method for depositing an encapsulating film |
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- 2002-09-11 CN CN02131620.1A patent/CN1259710C/zh not_active Expired - Lifetime
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CN1482665A (zh) | 2004-03-17 |
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Owner name: LIANHUA ELECTRONICS CO., LTD. Free format text: FORMER OWNER: XITONG SCIENCE AND TECHNOLOGY CO LTD Effective date: 20050408 |
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Effective date of registration: 20050408 Address after: Hsinchu Science Industrial Park, Taiwan Applicant after: UNITED MICROELECTRONICS Corp. Address before: Hsinchu Science Park, Taiwan Applicant before: SILICON INTEGRATED SYSTEMS Corp. |
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Granted publication date: 20060614 |
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