CN1255854C - 含有草酸铵的抛光系统及方法 - Google Patents

含有草酸铵的抛光系统及方法 Download PDF

Info

Publication number
CN1255854C
CN1255854C CNB028037286A CN02803728A CN1255854C CN 1255854 C CN1255854 C CN 1255854C CN B028037286 A CNB028037286 A CN B028037286A CN 02803728 A CN02803728 A CN 02803728A CN 1255854 C CN1255854 C CN 1255854C
Authority
CN
China
Prior art keywords
polishing
polishing system
abrasive
substrate
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028037286A
Other languages
English (en)
Chinese (zh)
Other versions
CN1486505A (zh
Inventor
霍默·乔
约瑟夫·D·霍金斯
周仁杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN1486505A publication Critical patent/CN1486505A/zh
Application granted granted Critical
Publication of CN1255854C publication Critical patent/CN1255854C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNB028037286A 2001-01-16 2002-01-04 含有草酸铵的抛光系统及方法 Expired - Fee Related CN1255854C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26192801P 2001-01-16 2001-01-16
US60/261,928 2001-01-16

Publications (2)

Publication Number Publication Date
CN1486505A CN1486505A (zh) 2004-03-31
CN1255854C true CN1255854C (zh) 2006-05-10

Family

ID=22995488

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028037286A Expired - Fee Related CN1255854C (zh) 2001-01-16 2002-01-04 含有草酸铵的抛光系统及方法

Country Status (6)

Country Link
US (1) US20020125461A1 (enExample)
EP (1) EP1356502A1 (enExample)
JP (1) JP2004526308A (enExample)
CN (1) CN1255854C (enExample)
MY (1) MY127299A (enExample)
WO (1) WO2002061810A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104745083A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
WO2007015551A1 (ja) * 2005-08-04 2007-02-08 Asahi Glass Company, Limited 研磨剤組成物および研磨方法
KR101232442B1 (ko) * 2007-09-21 2013-02-12 캐보트 마이크로일렉트로닉스 코포레이션 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법
SG10201605686XA (en) * 2008-02-01 2016-08-30 Fujimi Inc Polishing Composition And Polishing Method Using The Same
CN102368030A (zh) * 2011-06-28 2012-03-07 苏州方暨圆节能科技有限公司 具有薄膜的铜冷却扁管
CN102367012A (zh) * 2011-06-28 2012-03-07 苏州方暨圆节能科技有限公司 具有薄膜的铜散热器热管
CN102367011A (zh) * 2011-06-28 2012-03-07 苏州方暨圆节能科技有限公司 具有薄膜的铜散热器热管
CN103649271A (zh) * 2011-06-30 2014-03-19 旭化成电子材料株式会社 蚀刻液及使用其的蚀刻方法
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
CN104263248B (zh) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 一种适用于低下压力的弱酸性铜抛光液

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5221460B1 (enExample) * 1971-04-26 1977-06-10
JPS5332341B2 (enExample) * 1973-03-27 1978-09-07
SE400581B (sv) * 1974-12-13 1978-04-03 Nordnero Ab Bad for kemisk polering av koppar och dess legeringar
US4337114A (en) * 1980-10-29 1982-06-29 Sprague Electric Company Nodular copper removal from aluminum foil surfaces
JPS57164984A (en) * 1981-04-06 1982-10-09 Metsuku Kk Exfoliating solution for tin or tin alloy
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4705594A (en) * 1986-11-20 1987-11-10 Rem Chemicals, Inc. Composition and method for metal surface refinement
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US4910155A (en) * 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US4954142A (en) * 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5154759A (en) * 1991-04-11 1992-10-13 Dow Corning Corporation Polish containing amine functional siloxane
US5174813A (en) * 1991-11-07 1992-12-29 Dow Corning Corporation Polish containing derivatized amine functional organosilicon compounds
DE4142387A1 (de) * 1991-12-20 1993-06-24 Wacker Chemie Gmbh Pflegemittel fuer harte oberflaechen
US5258063A (en) * 1992-05-11 1993-11-02 Dow Corning Corporation Polish containing silylated derivatives of organic amines and epoxides
US5225034A (en) * 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5540810A (en) * 1992-12-11 1996-07-30 Micron Technology Inc. IC mechanical planarization process incorporating two slurry compositions for faster material removal times
JPH06287774A (ja) * 1993-04-05 1994-10-11 Metsuku Kk 銅および銅合金の表面処理剤
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407526A (en) * 1993-06-30 1995-04-18 Intel Corporation Chemical mechanical polishing slurry delivery and mixing system
US5486234A (en) * 1993-07-16 1996-01-23 The United States Of America As Represented By The United States Department Of Energy Removal of field and embedded metal by spin spray etching
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3303544B2 (ja) * 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
GB9425090D0 (en) * 1994-12-12 1995-02-08 Alpha Metals Ltd Copper coating
US5637185A (en) * 1995-03-30 1997-06-10 Rensselaer Polytechnic Institute Systems for performing chemical mechanical planarization and process for conducting same
WO1996033841A1 (en) * 1995-04-28 1996-10-31 Minnesota Mining And Manufacturing Company Abrasive article having a bond system comprising a polysiloxane
US5925174A (en) * 1995-05-17 1999-07-20 Henkel Corporation Composition and process for treating the surface of copper-containing metals
US5614444A (en) * 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5958794A (en) * 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5726099A (en) * 1995-11-07 1998-03-10 International Business Machines Corporation Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry
US5904159A (en) * 1995-11-10 1999-05-18 Tokuyama Corporation Polishing slurries and a process for the production thereof
US5750440A (en) * 1995-11-20 1998-05-12 Motorola, Inc. Apparatus and method for dynamically mixing slurry for chemical mechanical polishing
US5863638A (en) * 1996-01-17 1999-01-26 Harvey; Julie Method for bonding artists' materials to coated architectural panels and article for use in, and produced by the method
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5888119A (en) * 1997-03-07 1999-03-30 Minnesota Mining And Manufacturing Company Method for providing a clear surface finish on glass
CA2287404C (en) * 1997-04-30 2007-10-16 David A. Kaisaki Method of planarizing the upper surface of a semiconductor wafer
US6592776B1 (en) * 1997-07-28 2003-07-15 Cabot Microelectronics Corporation Polishing composition for metal CMP
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
US5849051A (en) * 1997-11-12 1998-12-15 Minnesota Mining And Manufacturing Company Abrasive foam article and method of making same
US6159076A (en) * 1998-05-28 2000-12-12 Komag, Inc. Slurry comprising a ligand or chelating agent for polishing a surface
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP4090589B2 (ja) * 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
US6039633A (en) * 1998-10-01 2000-03-21 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6066028A (en) * 1998-12-14 2000-05-23 The United States Of America As Represented By The Secretary Of The Navy Polishing of copper
JP3941284B2 (ja) * 1999-04-13 2007-07-04 株式会社日立製作所 研磨方法
US6582623B1 (en) * 1999-07-07 2003-06-24 Cabot Microelectronics Corporation CMP composition containing silane modified abrasive particles
JP4505891B2 (ja) * 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
US6582761B1 (en) * 1999-11-22 2003-06-24 Jsr Corporation Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing
US6471858B1 (en) * 2000-01-21 2002-10-29 Joseph A. King Water treatment dispensers
US6503766B1 (en) * 2000-06-27 2003-01-07 Lam Research Corp. Method and system for detecting an exposure of a material on a semiconductor wafer during chemical-mechanical polishing
US6541383B1 (en) * 2000-06-29 2003-04-01 Lsi Logic Corporation Apparatus and method for planarizing the surface of a semiconductor wafer
US6551935B1 (en) * 2000-08-31 2003-04-22 Micron Technology, Inc. Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104745083A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
CN104745083B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法

Also Published As

Publication number Publication date
CN1486505A (zh) 2004-03-31
EP1356502A1 (en) 2003-10-29
MY127299A (en) 2006-11-30
WO2002061810A1 (en) 2002-08-08
US20020125461A1 (en) 2002-09-12
JP2004526308A (ja) 2004-08-26

Similar Documents

Publication Publication Date Title
CN1255854C (zh) 含有草酸铵的抛光系统及方法
US8101093B2 (en) Chemical-mechanical polishing composition and method for using the same
EP1852481B1 (en) Silane containing polishing composition for CMP
JP5449248B2 (ja) 化学的機械的研磨組成物
EP2188344B1 (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
KR101248708B1 (ko) 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및 화학 기계 연마용 수계 분산체를 제조하기 위한 키트
US20090087988A1 (en) Polishing liquid and polishing method
US20140011360A1 (en) Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device
US8591763B2 (en) Halide anions for metal removal rate control
EP1272580A2 (en) System for the preferential removal of silicon oxide
JP2005515632A (ja) 酸化ガスを用いたｖｉｉｉ族金属含有表面の平坦化方法
JP2015532005A (ja) 白金及びルテニウム材料を選択的に研磨するための組成物及び方法
KR101093363B1 (ko) 금속 이온 함유 ｃｍｐ 조성물 및 그의 이용 방법
JP5110244B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
JP3496585B2 (ja) 基板の研磨方法
TWI904444B (zh) 半導體加工用組成物和使用其製作半導體器件的方法
JP2001057352A (ja) 基板の研磨方法
KR100679551B1 (ko) 금속용 연마액 및 연마방법
JP3496586B2 (ja) 研磨剤及び基板の研磨方法
JP2003045829A (ja) 研磨剤及び基板の研磨方法
JP3496551B2 (ja) 基板の研磨法
JP2003037092A (ja) 基板の研磨方法
JP2004134751A6 (ja) 研磨剤及び基板の研磨方法
JP2012238692A (ja) 半導体基板の研磨方法
JP2004006966A (ja) 基板の研磨方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060510

Termination date: 20150104

EXPY Termination of patent right or utility model