JP2004526308A - シュウ酸アンモニウムを含有する研磨系及び方法 - Google Patents

シュウ酸アンモニウムを含有する研磨系及び方法 Download PDF

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Publication number
JP2004526308A
JP2004526308A JP2002561265A JP2002561265A JP2004526308A JP 2004526308 A JP2004526308 A JP 2004526308A JP 2002561265 A JP2002561265 A JP 2002561265A JP 2002561265 A JP2002561265 A JP 2002561265A JP 2004526308 A JP2004526308 A JP 2004526308A
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JP
Japan
Prior art keywords
polishing
polishing system
substrate
abrasive
coupling agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002561265A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004526308A5 (enExample
Inventor
チョウ，ホーマー
ディー． ホーキンズ，ジョセフ
ツォウ，レンジー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2004526308A publication Critical patent/JP2004526308A/ja
Publication of JP2004526308A5 publication Critical patent/JP2004526308A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472—Non-aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2002561265A 2001-01-16 2002-01-04 シュウ酸アンモニウムを含有する研磨系及び方法 Pending JP2004526308A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US26192801P 2001-01-16 2001-01-16
PCT/US2002/000205 WO2002061810A1 (en) 2001-01-16 2002-01-04 Ammonium oxalate-containing polishing system and method

Publications (2)

Publication Number Publication Date
JP2004526308A true JP2004526308A (ja) 2004-08-26
JP2004526308A5 JP2004526308A5 (enExample) 2005-12-22

Family

ID=22995488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002561265A Pending JP2004526308A (ja) 2001-01-16 2002-01-04 シュウ酸アンモニウムを含有する研磨系及び方法

Country Status (6)

Country Link
US (1) US20020125461A1 (enExample)
EP (1) EP1356502A1 (enExample)
JP (1) JP2004526308A (enExample)
CN (1) CN1255854C (enExample)
MY (1) MY127299A (enExample)
WO (1) WO2002061810A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007015551A1 (ja) * 2005-08-04 2007-02-08 Asahi Glass Company, Limited 研磨剤組成物および研磨方法
JP2012049570A (ja) * 2004-03-24 2012-03-08 Cabot Microelectronics Corp 化学機械研磨組成物及びその使用方法
JP2013251561A (ja) * 2008-02-01 2013-12-12 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法
JP2015077681A (ja) * 2007-09-21 2015-04-23 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法

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US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
US7161247B2 (en) * 2004-07-28 2007-01-09 Cabot Microelectronics Corporation Polishing composition for noble metals
CN102368030A (zh) * 2011-06-28 2012-03-07 苏州方暨圆节能科技有限公司 具有薄膜的铜冷却扁管
CN102367012A (zh) * 2011-06-28 2012-03-07 苏州方暨圆节能科技有限公司 具有薄膜的铜散热器热管
CN102367011A (zh) * 2011-06-28 2012-03-07 苏州方暨圆节能科技有限公司 具有薄膜的铜散热器热管
CN103649271A (zh) * 2011-06-30 2014-03-19 旭化成电子材料株式会社 蚀刻液及使用其的蚀刻方法
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN104745083B (zh) * 2013-12-25 2018-09-14 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
CN104745087B (zh) * 2013-12-25 2018-07-24 安集微电子（上海）有限公司 一种化学机械抛光液以及抛光方法
CN104263248B (zh) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 一种适用于低下压力的弱酸性铜抛光液

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049570A (ja) * 2004-03-24 2012-03-08 Cabot Microelectronics Corp 化学機械研磨組成物及びその使用方法
WO2007015551A1 (ja) * 2005-08-04 2007-02-08 Asahi Glass Company, Limited 研磨剤組成物および研磨方法
JP2015077681A (ja) * 2007-09-21 2015-04-23 キャボット マイクロエレクトロニクス コーポレイション 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
JP2013251561A (ja) * 2008-02-01 2013-12-12 Fujimi Inc 研磨用組成物及びそれを用いた研磨方法

Also Published As

Publication number Publication date
CN1486505A (zh) 2004-03-31
EP1356502A1 (en) 2003-10-29
MY127299A (en) 2006-11-30
CN1255854C (zh) 2006-05-10
WO2002061810A1 (en) 2002-08-08
US20020125461A1 (en) 2002-09-12

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