MY127299A - Ammonium oxalate-containing polishing system and method - Google Patents
Ammonium oxalate-containing polishing system and methodInfo
- Publication number
- MY127299A MY127299A MYPI20020109A MYPI20020109A MY127299A MY 127299 A MY127299 A MY 127299A MY PI20020109 A MYPI20020109 A MY PI20020109A MY PI20020109 A MYPI20020109 A MY PI20020109A MY 127299 A MY127299 A MY 127299A
- Authority
- MY
- Malaysia
- Prior art keywords
- polishing system
- polishing
- ammonium oxalate
- containing polishing
- substrate
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 3
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 3
- 239000007822 coupling agent Substances 0.000 abstract 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical class [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26192801P | 2001-01-16 | 2001-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY127299A true MY127299A (en) | 2006-11-30 |
Family
ID=22995488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20020109A MY127299A (en) | 2001-01-16 | 2002-01-14 | Ammonium oxalate-containing polishing system and method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20020125461A1 (enExample) |
| EP (1) | EP1356502A1 (enExample) |
| JP (1) | JP2004526308A (enExample) |
| CN (1) | CN1255854C (enExample) |
| MY (1) | MY127299A (enExample) |
| WO (1) | WO2002061810A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| US6716771B2 (en) * | 2002-04-09 | 2004-04-06 | Intel Corporation | Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface |
| US7255810B2 (en) * | 2004-01-09 | 2007-08-14 | Cabot Microelectronics Corporation | Polishing system comprising a highly branched polymer |
| US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| WO2007015551A1 (ja) * | 2005-08-04 | 2007-02-08 | Asahi Glass Company, Limited | 研磨剤組成物および研磨方法 |
| KR101232442B1 (ko) * | 2007-09-21 | 2013-02-12 | 캐보트 마이크로일렉트로닉스 코포레이션 | 아미노실란으로 처리된 연마제 입자를 이용한 연마 조성물 및 방법 |
| SG10201605686XA (en) * | 2008-02-01 | 2016-08-30 | Fujimi Inc | Polishing Composition And Polishing Method Using The Same |
| CN102368030A (zh) * | 2011-06-28 | 2012-03-07 | 苏州方暨圆节能科技有限公司 | 具有薄膜的铜冷却扁管 |
| CN102367012A (zh) * | 2011-06-28 | 2012-03-07 | 苏州方暨圆节能科技有限公司 | 具有薄膜的铜散热器热管 |
| CN102367011A (zh) * | 2011-06-28 | 2012-03-07 | 苏州方暨圆节能科技有限公司 | 具有薄膜的铜散热器热管 |
| CN103649271A (zh) * | 2011-06-30 | 2014-03-19 | 旭化成电子材料株式会社 | 蚀刻液及使用其的蚀刻方法 |
| US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| CN104371551B (zh) * | 2013-08-14 | 2018-01-12 | 安集微电子(上海)有限公司 | 一种碱性阻挡层化学机械抛光液 |
| CN104745083B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液以及抛光方法 |
| CN104745087B (zh) * | 2013-12-25 | 2018-07-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液以及抛光方法 |
| CN104263248B (zh) * | 2014-09-26 | 2016-06-29 | 深圳市力合材料有限公司 | 一种适用于低下压力的弱酸性铜抛光液 |
Family Cites Families (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221460B1 (enExample) * | 1971-04-26 | 1977-06-10 | ||
| JPS5332341B2 (enExample) * | 1973-03-27 | 1978-09-07 | ||
| SE400581B (sv) * | 1974-12-13 | 1978-04-03 | Nordnero Ab | Bad for kemisk polering av koppar och dess legeringar |
| US4337114A (en) * | 1980-10-29 | 1982-06-29 | Sprague Electric Company | Nodular copper removal from aluminum foil surfaces |
| JPS57164984A (en) * | 1981-04-06 | 1982-10-09 | Metsuku Kk | Exfoliating solution for tin or tin alloy |
| US4671851A (en) * | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4705594A (en) * | 1986-11-20 | 1987-11-10 | Rem Chemicals, Inc. | Composition and method for metal surface refinement |
| US5226930A (en) * | 1988-06-03 | 1993-07-13 | Monsanto Japan, Ltd. | Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
| US4910155A (en) * | 1988-10-28 | 1990-03-20 | International Business Machines Corporation | Wafer flood polishing |
| US4954142A (en) * | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5230833A (en) * | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5154759A (en) * | 1991-04-11 | 1992-10-13 | Dow Corning Corporation | Polish containing amine functional siloxane |
| US5174813A (en) * | 1991-11-07 | 1992-12-29 | Dow Corning Corporation | Polish containing derivatized amine functional organosilicon compounds |
| DE4142387A1 (de) * | 1991-12-20 | 1993-06-24 | Wacker Chemie Gmbh | Pflegemittel fuer harte oberflaechen |
| US5258063A (en) * | 1992-05-11 | 1993-11-02 | Dow Corning Corporation | Polish containing silylated derivatives of organic amines and epoxides |
| US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5540810A (en) * | 1992-12-11 | 1996-07-30 | Micron Technology Inc. | IC mechanical planarization process incorporating two slurry compositions for faster material removal times |
| JPH06287774A (ja) * | 1993-04-05 | 1994-10-11 | Metsuku Kk | 銅および銅合金の表面処理剤 |
| US5575837A (en) * | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5407526A (en) * | 1993-06-30 | 1995-04-18 | Intel Corporation | Chemical mechanical polishing slurry delivery and mixing system |
| US5486234A (en) * | 1993-07-16 | 1996-01-23 | The United States Of America As Represented By The United States Department Of Energy | Removal of field and embedded metal by spin spray etching |
| US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
| JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
| JP3303544B2 (ja) * | 1994-07-27 | 2002-07-22 | ソニー株式会社 | 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法 |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| GB9425090D0 (en) * | 1994-12-12 | 1995-02-08 | Alpha Metals Ltd | Copper coating |
| US5637185A (en) * | 1995-03-30 | 1997-06-10 | Rensselaer Polytechnic Institute | Systems for performing chemical mechanical planarization and process for conducting same |
| WO1996033841A1 (en) * | 1995-04-28 | 1996-10-31 | Minnesota Mining And Manufacturing Company | Abrasive article having a bond system comprising a polysiloxane |
| US5925174A (en) * | 1995-05-17 | 1999-07-20 | Henkel Corporation | Composition and process for treating the surface of copper-containing metals |
| US5614444A (en) * | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
| US5958794A (en) * | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| US5726099A (en) * | 1995-11-07 | 1998-03-10 | International Business Machines Corporation | Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry |
| US5904159A (en) * | 1995-11-10 | 1999-05-18 | Tokuyama Corporation | Polishing slurries and a process for the production thereof |
| US5750440A (en) * | 1995-11-20 | 1998-05-12 | Motorola, Inc. | Apparatus and method for dynamically mixing slurry for chemical mechanical polishing |
| US5863638A (en) * | 1996-01-17 | 1999-01-26 | Harvey; Julie | Method for bonding artists' materials to coated architectural panels and article for use in, and produced by the method |
| US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5954997A (en) * | 1996-12-09 | 1999-09-21 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US5888119A (en) * | 1997-03-07 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Method for providing a clear surface finish on glass |
| CA2287404C (en) * | 1997-04-30 | 2007-10-16 | David A. Kaisaki | Method of planarizing the upper surface of a semiconductor wafer |
| US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| US5897375A (en) * | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
| US6096652A (en) * | 1997-11-03 | 2000-08-01 | Motorola, Inc. | Method of chemical mechanical planarization using copper coordinating ligands |
| US5849051A (en) * | 1997-11-12 | 1998-12-15 | Minnesota Mining And Manufacturing Company | Abrasive foam article and method of making same |
| US6159076A (en) * | 1998-05-28 | 2000-12-12 | Komag, Inc. | Slurry comprising a ligand or chelating agent for polishing a surface |
| US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
| JP4090589B2 (ja) * | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6039633A (en) * | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
| US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
| US6066028A (en) * | 1998-12-14 | 2000-05-23 | The United States Of America As Represented By The Secretary Of The Navy | Polishing of copper |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
| US6582623B1 (en) * | 1999-07-07 | 2003-06-24 | Cabot Microelectronics Corporation | CMP composition containing silane modified abrasive particles |
| JP4505891B2 (ja) * | 1999-09-06 | 2010-07-21 | Jsr株式会社 | 半導体装置の製造に用いる化学機械研磨用水系分散体 |
| US6582761B1 (en) * | 1999-11-22 | 2003-06-24 | Jsr Corporation | Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing |
| US6471858B1 (en) * | 2000-01-21 | 2002-10-29 | Joseph A. King | Water treatment dispensers |
| US6503766B1 (en) * | 2000-06-27 | 2003-01-07 | Lam Research Corp. | Method and system for detecting an exposure of a material on a semiconductor wafer during chemical-mechanical polishing |
| US6541383B1 (en) * | 2000-06-29 | 2003-04-01 | Lsi Logic Corporation | Apparatus and method for planarizing the surface of a semiconductor wafer |
| US6551935B1 (en) * | 2000-08-31 | 2003-04-22 | Micron Technology, Inc. | Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
-
2002
- 2002-01-04 JP JP2002561265A patent/JP2004526308A/ja active Pending
- 2002-01-04 CN CNB028037286A patent/CN1255854C/zh not_active Expired - Fee Related
- 2002-01-04 WO PCT/US2002/000205 patent/WO2002061810A1/en not_active Ceased
- 2002-01-04 EP EP02714691A patent/EP1356502A1/en not_active Withdrawn
- 2002-01-10 US US10/043,534 patent/US20020125461A1/en not_active Abandoned
- 2002-01-14 MY MYPI20020109A patent/MY127299A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1486505A (zh) | 2004-03-31 |
| EP1356502A1 (en) | 2003-10-29 |
| CN1255854C (zh) | 2006-05-10 |
| WO2002061810A1 (en) | 2002-08-08 |
| US20020125461A1 (en) | 2002-09-12 |
| JP2004526308A (ja) | 2004-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MY127299A (en) | Ammonium oxalate-containing polishing system and method | |
| MY126250A (en) | Rare earth salt/oxidizer-based cmp method | |
| WO2004076574A3 (en) | Cmp composition comprising a sulfonic acid and a method for polishing noble metals | |
| WO2002061008A3 (en) | Alkali metal-containing polishing system and method | |
| EP1080839A3 (en) | Polishing apparatus and dressing method | |
| EP1068928A3 (en) | Chemical mechanical polishing processes and components | |
| MY146591A (en) | Polishing composition containing polyether amine | |
| WO2001005393A3 (en) | Method for treating chronic pain using mek inhibitors | |
| EP1148538A4 (en) | CMP ABRASIVE, LIQUID SUPPLEMENT FOR DASSEL AND SUBSTRATE POLISHING METHOD | |
| AU2002254364A1 (en) | System and method for business systems transactions and infrastructure management | |
| WO2004055994A3 (en) | A power line communication system and method of using the same | |
| WO2002074748A8 (en) | Metalloproteinase inhibitors | |
| WO2002076499A3 (en) | Combination treatment of pancreatic cancer | |
| TWI268199B (en) | Polishing system comprising a highly branched polymer | |
| AU2002254548A1 (en) | Methods and systems for securing information communicated between communication devices | |
| WO1999057140A3 (en) | Growth-associated protease inhibitor heavy chain precursor | |
| MY137567A (en) | Substance system | |
| WO2001078654A3 (en) | Halogentated 2-amino-3, 4 heptenoic acid derivatives useful as nitric oxide synthase inhibitors | |
| WO2001079999A3 (en) | Method and system for accepting precompiled information | |
| TW200700544A (en) | Polymeric inhibitors for enhanced planarization | |
| PT1435991E (pt) | Utilização de aplidina para o tratamento de cancro pancreático | |
| AU2002230263A1 (en) | Payment method, and payment system with pay card used therewith | |
| MY120732A (en) | Process for the preparation of a metal salt of clavulanic acid | |
| WO2000052176A8 (de) | β-HEXOSAMINIDASE SOWIE DIESE KODIERENDE DNA-SEQUENZ AUS CILIATEN UND DEREN VERWENDUNG | |
| EP1302771A3 (en) | Spin trap for use in biological systems |