CN1252834C - 用自对准硅化物工艺形成的mosfet及其制造方法 - Google Patents

用自对准硅化物工艺形成的mosfet及其制造方法 Download PDF

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Publication number
CN1252834C
CN1252834C CNB031567274A CN03156727A CN1252834C CN 1252834 C CN1252834 C CN 1252834C CN B031567274 A CNB031567274 A CN B031567274A CN 03156727 A CN03156727 A CN 03156727A CN 1252834 C CN1252834 C CN 1252834C
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CN
China
Prior art keywords
mentioned
film
gate electrode
semiconductor device
region
Prior art date
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Expired - Fee Related
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CNB031567274A
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English (en)
Chinese (zh)
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CN1495911A (zh
Inventor
出羽光明
饭沼俊彦
须黑恭一
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Toshiba Corp
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Toshiba Corp
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Publication of CN1495911A publication Critical patent/CN1495911A/zh
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Publication of CN1252834C publication Critical patent/CN1252834C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNB031567274A 2002-09-13 2003-09-08 用自对准硅化物工艺形成的mosfet及其制造方法 Expired - Fee Related CN1252834C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP268970/2002 2002-09-13
JP2002268970A JP2004111479A (ja) 2002-09-13 2002-09-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1495911A CN1495911A (zh) 2004-05-12
CN1252834C true CN1252834C (zh) 2006-04-19

Family

ID=32267040

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031567274A Expired - Fee Related CN1252834C (zh) 2002-09-13 2003-09-08 用自对准硅化物工艺形成的mosfet及其制造方法

Country Status (5)

Country Link
US (1) US20040113209A1 (enExample)
JP (1) JP2004111479A (enExample)
KR (1) KR100508840B1 (enExample)
CN (1) CN1252834C (enExample)
TW (1) TW200406849A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050253205A1 (en) * 2004-05-17 2005-11-17 Fujitsu Limited Semiconductor device and method for fabricating the same
CN1700478A (zh) * 2004-05-17 2005-11-23 富士通株式会社 半导体器件及其制造方法
KR100678314B1 (ko) * 2004-12-15 2007-02-02 동부일렉트로닉스 주식회사 저접촉저항을 갖는 반도체 소자의 제조방법
KR100731096B1 (ko) 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 반도체 소자 및 이의 제조방법
US8258057B2 (en) * 2006-03-30 2012-09-04 Intel Corporation Copper-filled trench contact for transistor performance improvement
US7566605B2 (en) * 2006-03-31 2009-07-28 Intel Corporation Epitaxial silicon germanium for reduced contact resistance in field-effect transistors
JP4983087B2 (ja) * 2006-04-27 2012-07-25 富士通セミコンダクター株式会社 成膜方法、半導体装置の製造方法、コンピュータ可読記録媒体、スパッタ処理装置
JP2008071890A (ja) * 2006-09-13 2008-03-27 Toshiba Corp 半導体装置及びその製造方法
JP5309454B2 (ja) * 2006-10-11 2013-10-09 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2008141003A (ja) * 2006-12-01 2008-06-19 Toshiba Corp 半導体装置の製造方法
JP5211503B2 (ja) * 2007-02-16 2013-06-12 富士通セミコンダクター株式会社 半導体装置の製造方法
TW200910526A (en) 2007-07-03 2009-03-01 Renesas Tech Corp Method of manufacturing semiconductor device
CN102446970B (zh) * 2011-08-29 2014-05-28 上海华力微电子有限公司 一种防止酸槽清洗空洞形成的半导体器件及其制备方法
CN110571190B (zh) * 2018-06-05 2022-02-08 中芯国际集成电路制造(上海)有限公司 接触插塞的形成方法和刻蚀方法
US11222820B2 (en) * 2018-06-27 2022-01-11 International Business Machines Corporation Self-aligned gate cap including an etch-stop layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2740087B2 (ja) * 1992-08-15 1998-04-15 株式会社東芝 半導体集積回路装置の製造方法
US5427964A (en) * 1994-04-04 1995-06-27 Motorola, Inc. Insulated gate field effect transistor and method for fabricating
JP3219996B2 (ja) * 1995-03-27 2001-10-15 株式会社東芝 半導体装置及びその製造方法
JP3199015B2 (ja) * 1998-02-04 2001-08-13 日本電気株式会社 半導体装置及びその製造方法
US6063680A (en) * 1998-02-19 2000-05-16 Texas Instruments - Acer Incorporated MOSFETS with a recessed self-aligned silicide contact and an extended source/drain junction
JP3547419B2 (ja) * 2001-03-13 2004-07-28 株式会社東芝 半導体装置及びその製造方法
US6506637B2 (en) * 2001-03-23 2003-01-14 Sharp Laboratories Of America, Inc. Method to form thermally stable nickel germanosilicide on SiGe
TWI284348B (en) * 2002-07-01 2007-07-21 Macronix Int Co Ltd Method for fabricating raised source/drain of semiconductor device

Also Published As

Publication number Publication date
KR100508840B1 (ko) 2005-08-18
US20040113209A1 (en) 2004-06-17
CN1495911A (zh) 2004-05-12
TW200406849A (en) 2004-05-01
JP2004111479A (ja) 2004-04-08
KR20040024501A (ko) 2004-03-20

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