CN1248410C - 利用压电衬底非对称最优化切割的表面声波器件 - Google Patents

利用压电衬底非对称最优化切割的表面声波器件 Download PDF

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Publication number
CN1248410C
CN1248410C CNB018147801A CN01814780A CN1248410C CN 1248410 C CN1248410 C CN 1248410C CN B018147801 A CNB018147801 A CN B018147801A CN 01814780 A CN01814780 A CN 01814780A CN 1248410 C CN1248410 C CN 1248410C
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China
Prior art keywords
angle
piezoelectric substrate
range
electrode
acoustic wave
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Expired - Lifetime
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CNB018147801A
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English (en)
Chinese (zh)
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CN1476668A (zh
Inventor
N·F·瑙曼科
B·P·阿伯特
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6423—Means for obtaining a particular transfer characteristic
    • H03H9/6433—Coupled resonator filters
    • H03H9/6483—Ladder SAW filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
CNB018147801A 2000-08-31 2001-05-03 利用压电衬底非对称最优化切割的表面声波器件 Expired - Lifetime CN1248410C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22952300P 2000-08-31 2000-08-31
US60/229,523 2000-08-31

Publications (2)

Publication Number Publication Date
CN1476668A CN1476668A (zh) 2004-02-18
CN1248410C true CN1248410C (zh) 2006-03-29

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CNB018147801A Expired - Lifetime CN1248410C (zh) 2000-08-31 2001-05-03 利用压电衬底非对称最优化切割的表面声波器件

Country Status (6)

Country Link
US (1) US6556104B2 (enExample)
JP (1) JP2004507960A (enExample)
CN (1) CN1248410C (enExample)
AU (1) AU2001259447A1 (enExample)
DE (1) DE10196571B4 (enExample)
WO (1) WO2002019522A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391309B2 (ja) 1999-09-02 2003-03-31 株式会社村田製作所 表面波装置及び通信機装置
JP3979279B2 (ja) * 2001-12-28 2007-09-19 株式会社村田製作所 弾性表面波装置
DE10216842B4 (de) * 2002-04-16 2012-10-25 Epcos Ag Substrat für SAW-Bauelemente mit hoher Bandbreite
US6833774B2 (en) * 2002-06-25 2004-12-21 Sawtek, Inc. Surface acoustic wave filter
JP3841053B2 (ja) 2002-07-24 2006-11-01 株式会社村田製作所 弾性表面波装置及びその製造方法
JP2004165879A (ja) * 2002-11-12 2004-06-10 Alps Electric Co Ltd 弾性表面波素子
JPWO2005011117A1 (ja) * 2003-07-29 2006-09-14 株式会社村田製作所 １ポート型弾性表面波共振子及び弾性表面波フィルタ
JP2007028538A (ja) 2005-07-21 2007-02-01 Tdk Corp 弾性表面波装置
DE102006019961B4 (de) 2006-04-28 2008-01-10 Epcos Ag Elektroakustisches Bauelement
US7446453B1 (en) 2006-07-05 2008-11-04 Triquint, Inc. Surface acoustic wave devices using surface acoustic waves with strong piezoelectric coupling
US8035464B1 (en) 2009-03-05 2011-10-11 Triquint Semiconductor, Inc. Bonded wafer SAW filters and methods
US8378553B1 (en) 2010-07-01 2013-02-19 Triquint Semiconductor, Inc. Buried idt SAW filter having low propagation loss
CN105082375B (zh) * 2014-05-05 2017-01-18 中国科学院理化技术研究所 一种晶体切割方法
JP6633544B2 (ja) * 2014-12-24 2020-01-22 シチズン時計株式会社 弾性表面波デバイス
US10756625B2 (en) * 2016-06-29 2020-08-25 Win Semiconductors Corp. Integrated module of acoustic wave device with active thermal compensation and an active thermal compensating method thereof
JP7068835B2 (ja) * 2018-01-26 2022-05-17 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
CN108055017A (zh) * 2018-02-11 2018-05-18 海宁市瑞宏科技有限公司 一种用于超带宽声表面波滤波器设计的谐振器结构
FR3094480B1 (fr) * 2019-03-29 2021-10-01 Frecnsys Capteur à ondes acoustiques et interrogation de celui-ci

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001767A (en) * 1975-11-18 1977-01-04 The United States Of America As Represented By The Secretary Of The Air Force Low diffraction loss-low spurious response LiTaO3 substrate for surface acoustic wave devices
US5081389A (en) * 1990-11-30 1992-01-14 Ascom Zelcom Ag. Crystal cut angles for lithium tantalate crystal for novel surface acoustic wave devices
WO1996004713A1 (en) * 1994-08-05 1996-02-15 Japan Energy Corporation Surface acoustic wave device and production method thereof
JP3439294B2 (ja) * 1995-04-10 2003-08-25 三洋電機株式会社 弾性表面波フィルター
JP3358688B2 (ja) * 1995-04-10 2002-12-24 三洋電機株式会社 弾性表面波素子
JP3281510B2 (ja) * 1995-05-17 2002-05-13 康敬 清水 弾性表面波素子
JPH09167936A (ja) * 1995-10-13 1997-06-24 Fujitsu Ltd 弾性表面波装置
JPH09331229A (ja) * 1996-03-08 1997-12-22 Yasutaka Shimizu 弾性表面波素子
EP0886375A4 (en) * 1996-03-08 2000-12-06 Sanyo Electric Co ACOUSTIC SURFACE ELEMENT AND PORTABLE TELEPHONE THEREFOR
JP3224202B2 (ja) * 1996-11-28 2001-10-29 富士通株式会社 弾性表面波装置
JP3391309B2 (ja) * 1999-09-02 2003-03-31 株式会社村田製作所 表面波装置及び通信機装置

Also Published As

Publication number Publication date
US20020067227A1 (en) 2002-06-06
JP2004507960A (ja) 2004-03-11
US6556104B2 (en) 2003-04-29
DE10196571B4 (de) 2007-07-05
DE10196571T1 (de) 2003-07-03
AU2001259447A1 (en) 2002-03-13
WO2002019522A1 (en) 2002-03-07
CN1476668A (zh) 2004-02-18

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Granted publication date: 20060329