CN1245759C - 多频带功率放大器 - Google Patents

多频带功率放大器 Download PDF

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Publication number
CN1245759C
CN1245759C CNB02155787XA CN02155787A CN1245759C CN 1245759 C CN1245759 C CN 1245759C CN B02155787X A CNB02155787X A CN B02155787XA CN 02155787 A CN02155787 A CN 02155787A CN 1245759 C CN1245759 C CN 1245759C
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CN
China
Prior art keywords
unit
transistor
output
wiring
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB02155787XA
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English (en)
Chinese (zh)
Other versions
CN1424762A (zh
Inventor
山本和也
铃木敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1424762A publication Critical patent/CN1424762A/zh
Application granted granted Critical
Publication of CN1245759C publication Critical patent/CN1245759C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
CNB02155787XA 2001-12-05 2002-12-05 多频带功率放大器 Expired - Fee Related CN1245759C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP371206/01 2001-12-05
JP371206/2001 2001-12-05
JP2001371206A JP2003174335A (ja) 2001-12-05 2001-12-05 増幅器

Publications (2)

Publication Number Publication Date
CN1424762A CN1424762A (zh) 2003-06-18
CN1245759C true CN1245759C (zh) 2006-03-15

Family

ID=19180284

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02155787XA Expired - Fee Related CN1245759C (zh) 2001-12-05 2002-12-05 多频带功率放大器

Country Status (5)

Country Link
US (1) US6838941B2 (enExample)
JP (1) JP2003174335A (enExample)
CN (1) CN1245759C (enExample)
DE (1) DE10255941A1 (enExample)
FR (1) FR2833114A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651804B2 (en) 2017-06-08 2020-05-12 Murata Manufacturing Co., Ltd. Power amplifier circuit

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* Cited by examiner, † Cited by third party
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US7026876B1 (en) * 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7135919B2 (en) * 2004-08-06 2006-11-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Power amplifier with switchable load
KR101034621B1 (ko) * 2004-08-10 2011-05-12 엘지전자 주식회사 다중밴드 이동통신 단말기
DE602005016615D1 (de) * 2005-07-05 2009-10-22 Freescale Semiconductor Inc Kompensation der parasitären kopplung zwischen hf-ng
JP2007060616A (ja) * 2005-07-29 2007-03-08 Mitsubishi Electric Corp 高周波電力増幅器
US20070252651A1 (en) * 2006-04-28 2007-11-01 Huai Gao Power Amplifier With A Output Matching Network
US7683483B2 (en) * 2007-02-05 2010-03-23 Freescale Semiconductor, Inc. Electronic device with connection bumps
JP4849029B2 (ja) * 2007-07-23 2011-12-28 三菱電機株式会社 電力増幅器
CN101588195B (zh) * 2008-05-21 2012-10-17 华为技术有限公司 功放装置及信号收发系统
JP5282954B2 (ja) * 2008-12-03 2013-09-04 株式会社村田製作所 Ｒｆ電力増幅装置
JP5453120B2 (ja) * 2009-01-30 2014-03-26 株式会社Ｎｔｔドコモ マルチバンド整合回路、およびマルチバンド電力増幅器
CN101667810B (zh) * 2009-09-29 2011-11-16 锐迪科科技有限公司 双频射频功率放大器电路芯片
WO2011039792A1 (ja) * 2009-09-29 2011-04-07 株式会社 東芝 半導体装置
DE102010009984A1 (de) * 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
CN102281220B (zh) 2010-06-12 2015-04-29 华为技术有限公司 数据流处理方法、设备及系统
CN102130657A (zh) * 2010-09-14 2011-07-20 华为技术有限公司 一种功率放大器、不对称达赫笛功率放大设备和基站
JP5527313B2 (ja) * 2011-12-08 2014-06-18 株式会社村田製作所 半導体装置およびそれを用いた無線通信機器
JP6208413B2 (ja) * 2012-07-06 2017-10-04 日本無線株式会社 増幅器制御装置
JP5821876B2 (ja) 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
JP5719467B1 (ja) * 2014-05-30 2015-05-20 日本電信電話株式会社 低雑音増幅器
US9231550B2 (en) 2014-06-09 2016-01-05 Mitsubishi Electric Research Laboratories, Inc. Output matching network for wideband power amplifier with harmonic suppression
US9647703B2 (en) * 2014-09-16 2017-05-09 Skyworks Solutions, Inc. Multi-band device with reduced band loading
KR102714221B1 (ko) * 2019-11-12 2024-10-10 삼성전자주식회사 집적 클럭 게이팅 회로
CN112737523A (zh) * 2020-12-25 2021-04-30 广州昂瑞微电子技术有限公司 带宽可重构的射频功率放大器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151754A (ja) 1984-08-20 1986-03-14 Matsushita Electric Ind Co Ltd 密閉型鉛蓄電池
JPH11251849A (ja) * 1998-03-04 1999-09-17 Matsushita Electric Ind Co Ltd 高周波電力増幅器
US6151509A (en) * 1998-06-24 2000-11-21 Conexant Systems, Inc. Dual band cellular phone with two power amplifiers and a current detector for monitoring the consumed power
DE69904560T2 (de) * 1999-03-08 2003-06-26 Motorola, Inc. Sender
US6232840B1 (en) * 1999-06-10 2001-05-15 Raytheon Company Transistor amplifier having reduced parasitic oscillations
JP2001068556A (ja) 1999-08-30 2001-03-16 Mobile Communications Tokyo Inc 高周波電力増幅用半導体装置
JP3892630B2 (ja) * 1999-09-30 2007-03-14 株式会社東芝 半導体装置
EP1202446B1 (en) * 2000-10-23 2009-10-14 Panasonic Corporation Power amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651804B2 (en) 2017-06-08 2020-05-12 Murata Manufacturing Co., Ltd. Power amplifier circuit
TWI695579B (zh) * 2017-06-08 2020-06-01 日商村田製作所股份有限公司 功率放大電路

Also Published As

Publication number Publication date
US6838941B2 (en) 2005-01-04
JP2003174335A (ja) 2003-06-20
CN1424762A (zh) 2003-06-18
DE10255941A1 (de) 2003-07-03
US20030117219A1 (en) 2003-06-26
FR2833114A1 (fr) 2003-06-06

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060315

Termination date: 20121205