FR2833114A1 - Amplificateur de puissance multibande - Google Patents

Amplificateur de puissance multibande Download PDF

Info

Publication number
FR2833114A1
FR2833114A1 FR0215274A FR0215274A FR2833114A1 FR 2833114 A1 FR2833114 A1 FR 2833114A1 FR 0215274 A FR0215274 A FR 0215274A FR 0215274 A FR0215274 A FR 0215274A FR 2833114 A1 FR2833114 A1 FR 2833114A1
Authority
FR
France
Prior art keywords
elementary
transistors
transistor
interconnection
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR0215274A
Other languages
English (en)
French (fr)
Inventor
Kazuya Yamamoto
Satoshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2833114A1 publication Critical patent/FR2833114A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR0215274A 2001-12-05 2002-12-04 Amplificateur de puissance multibande Pending FR2833114A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001371206A JP2003174335A (ja) 2001-12-05 2001-12-05 増幅器

Publications (1)

Publication Number Publication Date
FR2833114A1 true FR2833114A1 (fr) 2003-06-06

Family

ID=19180284

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0215274A Pending FR2833114A1 (fr) 2001-12-05 2002-12-04 Amplificateur de puissance multibande

Country Status (5)

Country Link
US (1) US6838941B2 (enExample)
JP (1) JP2003174335A (enExample)
CN (1) CN1245759C (enExample)
DE (1) DE10255941A1 (enExample)
FR (1) FR2833114A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026876B1 (en) * 2003-02-21 2006-04-11 Dynalinear Technologies, Inc. High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7135919B2 (en) * 2004-08-06 2006-11-14 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Power amplifier with switchable load
KR101034621B1 (ko) * 2004-08-10 2011-05-12 엘지전자 주식회사 다중밴드 이동통신 단말기
DE602005016615D1 (de) * 2005-07-05 2009-10-22 Freescale Semiconductor Inc Kompensation der parasitären kopplung zwischen hf-ng
JP2007060616A (ja) * 2005-07-29 2007-03-08 Mitsubishi Electric Corp 高周波電力増幅器
US20070252651A1 (en) * 2006-04-28 2007-11-01 Huai Gao Power Amplifier With A Output Matching Network
US7683483B2 (en) * 2007-02-05 2010-03-23 Freescale Semiconductor, Inc. Electronic device with connection bumps
JP4849029B2 (ja) * 2007-07-23 2011-12-28 三菱電機株式会社 電力増幅器
CN101588195B (zh) * 2008-05-21 2012-10-17 华为技术有限公司 功放装置及信号收发系统
JP5282954B2 (ja) * 2008-12-03 2013-09-04 株式会社村田製作所 Ｒｆ電力増幅装置
JP5453120B2 (ja) * 2009-01-30 2014-03-26 株式会社Ｎｔｔドコモ マルチバンド整合回路、およびマルチバンド電力増幅器
CN101667810B (zh) * 2009-09-29 2011-11-16 锐迪科科技有限公司 双频射频功率放大器电路芯片
WO2011039792A1 (ja) * 2009-09-29 2011-04-07 株式会社 東芝 半導体装置
DE102010009984A1 (de) * 2009-12-28 2011-06-30 Rohde & Schwarz GmbH & Co. KG, 81671 Verstärkerbaustein mit einem Kompensationselement
CN102281220B (zh) 2010-06-12 2015-04-29 华为技术有限公司 数据流处理方法、设备及系统
CN102130657A (zh) * 2010-09-14 2011-07-20 华为技术有限公司 一种功率放大器、不对称达赫笛功率放大设备和基站
JP5527313B2 (ja) * 2011-12-08 2014-06-18 株式会社村田製作所 半導体装置およびそれを用いた無線通信機器
JP6208413B2 (ja) * 2012-07-06 2017-10-04 日本無線株式会社 増幅器制御装置
JP5821876B2 (ja) 2013-03-05 2015-11-24 株式会社村田製作所 電力増幅モジュール
JP5719467B1 (ja) * 2014-05-30 2015-05-20 日本電信電話株式会社 低雑音増幅器
US9231550B2 (en) 2014-06-09 2016-01-05 Mitsubishi Electric Research Laboratories, Inc. Output matching network for wideband power amplifier with harmonic suppression
US9647703B2 (en) * 2014-09-16 2017-05-09 Skyworks Solutions, Inc. Multi-band device with reduced band loading
TWI695579B (zh) 2017-06-08 2020-06-01 日商村田製作所股份有限公司 功率放大電路
KR102714221B1 (ko) * 2019-11-12 2024-10-10 삼성전자주식회사 집적 클럭 게이팅 회로
CN112737523A (zh) * 2020-12-25 2021-04-30 广州昂瑞微电子技术有限公司 带宽可重构的射频功率放大器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035657A1 (en) * 1999-03-08 2000-09-13 Motorola, Inc. Transmitter
US6151509A (en) * 1998-06-24 2000-11-21 Conexant Systems, Inc. Dual band cellular phone with two power amplifiers and a current detector for monitoring the consumed power
JP2001102460A (ja) * 1999-09-30 2001-04-13 Toshiba Corp 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151754A (ja) 1984-08-20 1986-03-14 Matsushita Electric Ind Co Ltd 密閉型鉛蓄電池
JPH11251849A (ja) * 1998-03-04 1999-09-17 Matsushita Electric Ind Co Ltd 高周波電力増幅器
US6232840B1 (en) * 1999-06-10 2001-05-15 Raytheon Company Transistor amplifier having reduced parasitic oscillations
JP2001068556A (ja) 1999-08-30 2001-03-16 Mobile Communications Tokyo Inc 高周波電力増幅用半導体装置
EP1202446B1 (en) * 2000-10-23 2009-10-14 Panasonic Corporation Power amplifier

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6151509A (en) * 1998-06-24 2000-11-21 Conexant Systems, Inc. Dual band cellular phone with two power amplifiers and a current detector for monitoring the consumed power
EP1035657A1 (en) * 1999-03-08 2000-09-13 Motorola, Inc. Transmitter
JP2001102460A (ja) * 1999-09-30 2001-04-13 Toshiba Corp 半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 21 3 August 2001 (2001-08-03) *

Also Published As

Publication number Publication date
US6838941B2 (en) 2005-01-04
JP2003174335A (ja) 2003-06-20
CN1245759C (zh) 2006-03-15
CN1424762A (zh) 2003-06-18
DE10255941A1 (de) 2003-07-03
US20030117219A1 (en) 2003-06-26

Similar Documents

Publication Publication Date Title
FR2833114A1 (fr) Amplificateur de puissance multibande
FR2921213A1 (fr) Systemes, procedes, et appareils pour commutateurs d'antenne haute puissance a semi-conducteur a oxyde de metal complementaire(cmos) utilisant la commutation de corps et un composant externe dans une structure a empilages multiples
FR2909497A1 (fr) Systemes, procedes et appareils pour des commutateurs d'antennes cmos de puissance elevee utilisant une commutation de corps et une commance de diode a jonction de substrat dans une structure multi-empilement
US7145394B2 (en) High frequency power amplifier module, and wireless communication system
US7414821B2 (en) Semiconductor integrated circuit device
FR2906655A1 (fr) Systemes, procedes, et appareils pour commutateurs d'antenne en technologie metal oxyde semiconducteur complementaire (cmos) utilisant la commutation de corps dans une structure a empilages multiples
US6900694B2 (en) High frequency power amplifier module and wireless communication apparatus
US20080218260A1 (en) Multiple rf path amplifiers
FR2916108A1 (fr) Amplificateur de puissance a haute frequence
FR2793968A1 (fr) Amplificateur de puissance haute frequence pour un systeme double bande
FR2959077A1 (fr) Amplificateur a faible facteur de bruit, a gain variable et de puissance
FR3119269A1 (fr) Impression par transfert pour applications RF
FR2840129A1 (fr) Amplificateur de puissance capable de commuter le gain tout en reduisant la puissance de bruit dans la bande de reception
US10892714B2 (en) Power amplifier circuit
US20140312979A1 (en) Amplifying circuit including active inductor
FR2817416A1 (fr) Dispositif a semiconducteur avec un dispositif a transistors bipolaires
EP0455570A1 (fr) Dispositif d'amplification très large bande continu-hyperfréquences, notamment réalisable en circuit intégré
Min et al. SiGe T/R modules for Ka-band phased arrays
EP1376884B1 (fr) Dispositif de commutation radiofréquence, en particulier pour téléphone mobile cellulaire
FR2817409A1 (fr) Amplificateur de puissance de haute frequence
US20200358401A1 (en) Power amplifier biasing network providing gain expansion
FR3066059A1 (fr) Appareil de communication avec chaine de reception a encombrement reduit
EP4489301A1 (fr) Amplificateur de puissance doherty multi-bandes
US20060255880A1 (en) RF amplifier
JPH10126176A (ja) 伝送回路装置