CN1241807A - 减少粘合剂掺出的芯片连接 - Google Patents

减少粘合剂掺出的芯片连接 Download PDF

Info

Publication number
CN1241807A
CN1241807A CN99108446A CN99108446A CN1241807A CN 1241807 A CN1241807 A CN 1241807A CN 99108446 A CN99108446 A CN 99108446A CN 99108446 A CN99108446 A CN 99108446A CN 1241807 A CN1241807 A CN 1241807A
Authority
CN
China
Prior art keywords
adhesive
weight
amount
resin composition
organo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN99108446A
Other languages
English (en)
Other versions
CN1186805C (zh
Inventor
B·K·阿佩特
G·A·约汉森
K·I·帕帕托马斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN1241807A publication Critical patent/CN1241807A/zh
Application granted granted Critical
Publication of CN1186805C publication Critical patent/CN1186805C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48095Kinked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4905Shape
    • H01L2224/49051Connectors having different shapes
    • H01L2224/49052Different loop heights
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01007Nitrogen [N]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01016Sulfur [S]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01018Argon [Ar]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01038Strontium [Sr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0104Zirconium [Zr]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01041Niobium [Nb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01042Molybdenum [Mo]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01043Technetium [Tc]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01044Ruthenium [Ru]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01051Antimony [Sb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01052Tellurium [Te]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01072Hafnium [Hf]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01073Tantalum [Ta]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01076Osmium [Os]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01077Iridium [Ir]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1517Multilayer substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

将其上具有金属电路及导线焊接片的有机芯片载体用光固化粘合剂连接到集成电路芯片上,并用引线接合法电连接到导线焊接片上。

Description

减少粘合剂渗出的芯片连接
本发明涉及把芯片用粘合法连接到有机芯片载体上,特别涉及明显减少(如果不是完全消除的话)粘合剂渗出这一问题。本发明涉及将芯片粘合连接到有机芯片载体上,而同时保证芯片载体的金属表面保持仍然可用导线连接。本发明提供了一种减少芯片连接粘合剂的分离及从而减少因粘合剂导致的基片表面污染和/或沾污的方法。本发明也涉及能减少渗出的粘合剂组合物。
集成电路的封装技术已侧重向微型化发展。改进后的方法使得能够将数百万晶体管电路元件集成为单一的集成半导体合为一体的线路或基片,这致使组装这些线路的方法更加侧重节省空间,而又导致可靠且能大批量生产的组件。
为形成电子体系,需要将众多集成电路合到一起,并将这些集成电路电连接起来。一旦连了起来,其他器件例如键盘、视频监控器及打印机即可以与此电子体系连接并连同该电子体系一起加以使用。
为了完成此互联,必须提供导电通道以便把集成电路芯片的内电路连接到外体系电路上。集成电路芯片采用了与芯片的集成电路连接的敷金属的凸起或“焊接片”(bond pad)。
集成电路组件含有称作“焊爪”(bond fingers)的导体,它们采用引线接合法、带自动接合法(“TAB”)、楔焊法、球焊法或其他公知方法,连接到集成电路芯片的焊接片上。焊爪被连接到用于连接印刷电路板或插件的集成电路组件管脚上。
在将集成电路芯片焊接片接合到集成电路组件之前,芯片必须与集成电路组件组相连。有机粘合剂例如环氧基粘合剂、丙烯酸类基粘合剂或聚硅氧烷已用于将芯片与集成电路组件组的连接上。典型的环氧粘合剂还包含防止打火花的银粉填料颗粒。
虽然所用粘合剂相当粘稠,但它们无疑有从连接点渗出和散开的倾向。例如,粘合剂有一种沿芯片连接区的边缘渗出及散开到邻接区例如焊爪区(在该处需进行最终电连接)的倾向。
已开发了各种减少树脂渗出的方法。例如,芯片载体表面可以在芯片连接点处有一个凹口,于是芯片及粘合剂在低于芯片载体邻接区(电焊接部位即在该处)的地方将被开一个凹口。这种方法的一个缺点是,不是所有的集成电路组件都提供在载体表面开凹口这种选择。例如,超大规模集成电路(VLSI)组件需要大量焊接部位,而且这些部位位于与芯片连接表面相同的水平面上。
美国专利5409863提出了一种在芯片连接过程中控制粘合剂散开的方法。这一方法把低断面隔板(例如焊药掩模环(Solder mask ring))加到芯片载体结构中。隔板包围了芯片连接区的边缘,防止粘合剂树脂散开到芯片载体上的相邻的焊接部位。
此外,处理这一问题的尝试还包括芯片连接后进行等离子体清洗。然而,这种技术在消除粘合剂的渗出方面不是特别有效的。还建议过用氟化偶联剂或其他类型表面活性剂处理表面,以便使此表面不会被粘合剂树脂润湿。然而,这些加工过程必须小心控制,而且它们也是十分费时和相当昂贵的。此外,以如此方式处理过的表面的贮存寿命一般是相当有限的,从数小时至几天,这限制了它们的用途。
因此希望提供一种技术用于在制造半导体集成电路芯片以及集成电路组件时防止芯片连接的粘合剂散开到邻近焊爪。
本发明提供了减少基片表面被接合粘合剂污染和/或沾污的方法。此外,本发明提供了一种不明显增加芯片连接工艺的时间和/或成本的方法。
根据本发明,将在其上具有金属电路和导线焊接片的有机芯片载体,用光固化粘合剂接合到下方的芯片上,并且用引线接合法与导线焊接片相互电联接。
此外,本发明也涉及一种制造半导体集成电路组件组的方法,利用它,集成电路粘合剂不散开到组件的焊爪连接上。本发明的方法包括在集成电路芯片载体的结合区域上提供一种粘合剂。此粘合剂是光固化粘合剂组合物。将此组合物暴露于光化辐射之中,以使此粘合剂不渗出。把集成电路芯片放在粘合剂图形之上,以便沿着芯片边缘形成粘合剂轮廓线(adhesive fillet)。在放置芯片之前或之后,可将此粘合剂进行光化辐射,因为暴露于光化辐射使组合物交联,从而防止树脂散开,但不使粘合剂完全硬化,因此使粘合剂保持足够的粘合强度以便在与芯片之间形成粘合,即使在进行光化辐射后再连接也如此。
在芯片与有机芯片载体组装并进行光化辐射之后,把组件在高温下进行后烘烤,以便使粘合剂完全固化和硬化,并在有机芯片载体及集成电路芯片之间形成必要的粘结接合。
本发明也涉及适用于上述方法的组合物。本发明的组合物具有双重固化性能而且具有稳定的贮存寿命。此外,此组合物是光固化的,而且在用光化辐射进行固化之后使它不产生树脂渗出。更具体地说,此组合物包含:
A.环氧组分,它包括至少一种可以热固化的多环氧化物树脂;
B.烯属不饱和单体组分,它包括至少一种可被光化辐射固化的多烯属不饱和单体;
C.至少一种氰酸酯;
D.至少一种光引发剂;
E.至少一种有机过氧化物;以及
F.至少一种热活化固化剂,它选自:有机金属化合物,无机金属盐,酚类化合物,有机金属化合物在酚类化合物中的溶液;以及它们的混合物。
本发明的其它目的及优点,对于本领域技术人员根据下列详细描述将变得很清楚,下列描述中,通过简单地说明实施本发明的最好模式,仅显示和描述了本发明的优选实施方案。人们将会认识到,在不背离本发明的情况下,本发明可以有其他的和不同的实施方案,而且它的若干细节在各种明显方面是可以变更的。因此,此描述是作为对发明实质的说明而不是对发明的限制。
图1是根据本发明所制备的结构的局部示意图。
参考附图有助于对本发明的理解。具体地说,此图是根据本发明的一个结构的局部示意图。具体地说,此集成电路组件包括一个集成电路芯片1,存在于集成电路芯片1上并连接到含有焊爪8的集成电路载体3上的粘合剂2。
集成电路载体与集成电路芯片1在焊接片7通过引线接合连接5电连接。焊爪则被导体4通过介电体9被连接到焊料球6的焊接片或焊接盘(未示出)上。接着又把该焊料球连接到体系的水平电路板或插件(未示出)上。
根据本发明,把光固化芯片连接用粘合剂以一定量及图形分配到基片上,以便在随后的芯片连接工序中形成合适的轮廓线和足够的连接。此光固化粘合剂组合物优选为阳离子可固化组合物。基于自由基的组合物也可使用。用于本发明的组合物具有双重的固化性能,特别是除了可被光化辐射而固化外,还可以热固化。合适的可光固化组合物是光敏环氧聚合物组合物,光敏可固化氰酸酯组合物,或者它们的混合物。
合适的氰酸酯组分包括至少一种氰酸酯化合物(单体、低聚物或聚合物)。优选的是,氰酸酯组分包括至少一种氰酸酯化合物(单体、低聚物或聚合物)。更优选的是,氰酸酯组分包括至少一种其每一分子具有两个或多个-OCN官能团的化合物。合适的氰酸酯化合物的分子量典型地约为150~2,000。此氰酸酯组分优选包括一种或多种根据下列通式I、II或III的氰酸酯化合物。
通式I是
              Z(-OCN)q  (I)式中q可以是由2至7的整数,Z包括下列(1)及(2)中的至少一种:(1)含5~30个碳原子的单-、二、三-或四-取代的芳族烃,及(2)含7~20个碳原子的单-、二、三-或四-取代的脂族烃。任选地,(1)和(2)可含1-10个杂原子,而杂原子选自:非过氧化物的氧、硫,非膦基的磷,非氨基的氮,卤素及硅。
Figure A9910844600091
式中X是单键,C1-C4亚烷基,-S-,或-SO2-基;而R1,R2,R3,R4,R5和R6独立地是-H,C1-C5,烷基,或氰酸酯基(-OCN),这里R1,R2,R3,R4,R5和R6中的至少两个是氰酸酯基。R1,R2,R3,R4,R5和R6优选是-H,-CH3或氰酸酯基。式中n是0~5。
适用于本发明的氰酸酯的用量,以组合物中可聚合组分的总重量计,可以为约25%重量~约50%重量。氰酸酯组分可以以单-氰酸酯存在,优选每个分子含有至少两个-OCN官能团,或以氰酸酯的混合物存在,优选包括至少一个二氰酸酯。适用于本发明的优选氰酸酯包括多芳烃氰酸酯,例如双酚类的二氰酸酯。特别优选的氰酸酯包括双酚A的二氰酸酯,例如AroCy B-10氰酸酯单体,四甲基双酚F的二氰酸酯,例如AroCy M-10,以及双酚E的二氰酸酯,例如AroCy L-10,它们均来自Ciba。或者,双酚A的半固态二氰酸酯低聚物与低粘度的氰酸酯合用。特别优选的氰酸酯低聚物是双酚A的二氰酸酯低聚物,例如来自Ciba的AroCy B-30半固态树脂。
适用于本发明组合物的环氧树脂包括能被高温固化的多环氧化物。这些多环氧化物的例子包括聚缩水甘油醚和聚(b-甲基缩水甘油基)醚类,它们是在碱性条件下由每个分子中含至少两个游离醇羟基和/或酚羟基的化合物与适合的表氯醇反应而制得,或者在酸性催化剂存在下反应随后用碱进行处理。这些醚类可以由无环醇例如乙二醇,二甘醇及高级聚(氧乙烯)二醇,丙-1,2-二醇及聚丙二醇,丙-1,2-二醇,丁-1,4-二醇,聚氧化四亚甲基二醇,戊-1,5-二醇,己-2,4,6-三醇,甘油,1,1,1-三羟甲基丙烷,季戊四醇,山梨醇与聚表氯醇制得;由环状脂肪醇例如间苯二酚,对环己二醇,双(4-羟环己基)甲烷,2,2-双(4-羟环己基)丙烷及1,1-双(羟甲基)环己-3-烯制得;及由具有芳核的醇,例如N,N-双(2-羟乙基)苯胺及对,对-双(2-羟乙氨基)二苯甲烷制得。此外,它们可以由单核的酚类例如间苯二酚及对苯二酚,及由多核的酚类例如双(4-羟苯基)甲烷,4,4-二羟基联苯,双(4-羟苯基)砜,1,1,2,2-四(4-羟苯基)乙烷,2,2-双(4-羟苯基)丙烷,2,2-双(3,5-二溴-4-羟苯基)丙烷,以及线型酚醛清漆类制得,而这些线型酚醛清漆由醛类(例如甲醛、乙醛、二氯乙醛及糖醛)与酚类的混合物制得酚类例如苯酚自身,以及其环上被多个氯原子或被多个烷基(每个烷基含最高达9个碳原子)取代的酚类,例如4-氯苯酚,2-甲基苯酚,及4-叔丁基苯酚。
聚(N-缩水甘油基)化合物包括,例如,由表氯醇与含至少两个氨基氢原子的胺类[例如苯胺,正丁胺,双(4-氨基苯)甲烷及双(4-甲氨苯基)甲烷]的反应产物经脱去氯化氢反应而制得的那些;三缩水甘油基异氰尿酸酯;和环亚烷基脲类,例如亚乙基脲及1,3-亚丙基脲的N,N′-二缩水甘油基衍生物,和乙丙酰脲类如5,5-二甲基乙丙酰脲的N,N′-二缩水甘油基衍生物。
这类环氧化物来自众多商业来源,例如来自Shell Chemical公司的Epon系列,来自Rhone-Poulenc的Epirez系列,来自Ciba的Araldite系列,以及来自Dow Chemical公司的DER系列。
得自上述来源的卤化环氧树脂例如溴化环氧化物也适用。卤化环氧树脂与其他阻燃材料的混合物适用作为本发明组合物的阻燃添加剂。
适用于本发明的特别优选环氧树脂是双酚A缩水甘油醚类,它们是以Epon 825和Epon 828(来自Shell Chemical公司),以DER 331和332(来自Dow Chemical公司)的商品名出售,以及以ERL-4221和ERL-4299的商品名出售的环脂族环氧树脂(来自Union Carbide公司)。
可以加入作为环氧稀释剂的各种环氧化物,例如以EPODIL系列出售的缩水甘油醚(来自Pacific Anchor Chemical公司,它是AirProducts and Chemicals公司的分公司)以降低本发明树脂的粘度。
环氧化合物在本发明树脂组合物中的加入量,以组合物的可聚合组分总含量计,为约25~70%重量,优选为约30~60%重量。
本组合物的适合的多烯属不饱和组分可包括聚甲基丙烯酸类树脂,聚乙烯基单体及溶于乙烯基单体中的多不饱和聚酯。这里所用的术语“甲基丙烯酸类”意在广泛地理解为包括丙烯酸类化合物及甲基丙烯酸类化合物,例如丙烯酸酯类及甲基丙烯酸酯类。
优选的是,多烯属不饱和单体的粘度要低,以抵消任何高粘度组分的作用,以便维持有效使用金属填料或非金属填料所需的低组合物粘度。此外,多烯属不饱和单体组分可包括一种或多种低粘度单烯属不饱和单体作为稀释剂,但在任何情况下烯属不饱和单体组分必须包括至少一种多烯属不饱和单体。这里所用的术语“多烯属不饱和”指至少含有两个烯烃双键。多烯属不饱和单体的用量以本组合物可聚合组分的总含量计为组合物重量的约5~30%重量,优选约为15-25%重量。
聚丙烯酸酯通常是适用的,包括1,3-丁二醇二丙烯酸酯,二甘醇二丙烯酸酯,1,6-己二醇二丙烯酸酯,新戊二醇二丙烯酸,聚乙二醇二丙烯酸酯,四甘醇二丙烯酸酯,亚甲基二醇二丙烯酸酯,季戊四醇四丙烯酸酯,三丙二醇二丙烯酸酯,乙氧基化双酚A二丙烯酸酯,三羟甲基丙烷三丙烯酸酯,双三羟甲基丙烷四丙烯酸酯,二季戊四醇五丙烯酸酯,季戊四醇三丙烯酸酯,以及相应的甲基丙烯酸化合物。亦适用的是(甲基)丙烯酸与环氧树脂和聚氨酯树脂的反应产物。某些典型的光固化的由单烯属不饱和酸(例如丙烯酸或甲基丙烯酸)与各种环氧化物的反应产物是在美国专利4,169,732,3,661,576,3,989,610,3,772,062,3,912,670,3,450,613,4,003,877,4,014,771及4,237,216中所公开的那些,这些公开在这里被收作参考文献。其他适用的聚(甲基)丙烯酸酯化合物也在美国专利4,051,195,2,895,950,3,218,305及3,425,988中作了描述。
适用的(甲基)丙烯酸类树脂包括(甲基)丙烯酸的酯类及酰胺类以及其与其他可共聚单体的共聚单体。作为例子的酯类包括丙烯酸甲酯,甲基丙烯酸甲酯,丙烯酸羟乙酯,甲基丙烯酸丁酯,丙烯酸辛酯,及丙烯酸2-环氧乙酯。
可光化辐射固化和能够适用于本发明组合物中的另一类树脂包括乙烯基单体,例如苯乙烯,乙烯基甲苯,乙烯基吡咯烷酮,乙酸乙烯酯,二乙烯基苯,等等。
另一类适用的可光化辐射固化的树脂材料包括如由α,β-烯属不饱和聚羧酸与多羟基醇通常制备的溶于乙烯基单体中的不饱和聚酯,如美国专利4,025,407中所述的。
优选的多烯属不饱和组分包括三羟甲基丙烷三甲基丙烯酸酯,三羟乙基丙烷三丙烯酸酯,二季戊四醇五丙烯酸酯,季戊四醇三丙烯酸酯,乙氧基化三羟甲基丙烷三丙烯酸酯,1,6-己二醇二丙烯酸酯,新戊二醇二丙烯酸酯,季戊四醇四丙烯酸酯,及1,3-丁二醇二丙烯酸酯。优选的单丙烯酸酯包括丙烯酸环己酯,丙烯酸2-环氧乙酯,丙烯酸2-甲氧酯,丙烯酸苯甲酰酯,及丙烯酸异冰片酯。这类化合物得自多种来源。例如,优选的聚丙烯酸酯-二季戊四醇单羟基五丙烯酸酯以SR 399之名得自Sartomer公司。
根据本发明所采用的组合物还通常包含有机过氧化物。适用的过氧化物包括各种过氧酯类,例如α-枯基-过氧-新癸酸酯,1,1-二甲基-3-羟基丁基-过氧新癸酸酯,a-枯基过氧新庚酸酯,叔戊基过氧新癸酸酯,叔丁基过氧新癸酸酯,叔戊基过氧新癸酸酯,叔丁基过氧新癸酸酯,叔戊基过氧新戊酸酯,叔丁基过氧新戊酸酯,1,1-二甲基-3-羟基-丁基过氧-2-乙基乙酸酯,2,5-二甲基-2,5-二(2-乙基己酰基过氧)己烷,叔戊基过氧-2-乙基己酸酯,叔丁基过氧-2-乙基己酸酯,叔丁基过氧异丁酸酯,叔丁基过氧马来酸酯,叔丁基过氧乙酸酯,叔戊基过氧乙酸酯以及叔戊基过氧-苯甲酸酯。
优选的有机过氧化物包括过氧化月桂酰,叔戊基过氧-2-乙基己酸酯和1,1-二(丁基过氧)-3,3,5-三甲基己烷。过氧化月桂酰以Alperox-F名称提供,叔戊基过氧-2-乙基己酸酯以Lupersol 575名提供;以及1,1-二(叔丁基过氧)-2,2,5-三甲基己烷以Lupersol256的名称提供,它们均来自Elf Atochem. North America公司。
有机过氧化物在本发明组合物中的通常用量,以树脂组合物计为约0.2~约2%重量。
光化辐射指波长约为700nm或更小、可以直接或间接使树脂组合物中指定树脂组分固化的电磁辐射。在本上下文中的间接固化,指在在这样一种电磁辐射条件下固化,如由别的化合物引发、促进或者是充当媒介。
因此,可往此组合物中加入光引发剂,加入的量以能有效响应光化辐射,并通过其显著的聚合反应引发和导致相关树脂的固化为宜。适用的用于紫外(UV)光化辐射固化单和多烯属单体的光引发剂包括产生自由基的UV引发剂,例如二苯甲酮及取代二苯甲酮类,苯乙酮及取代苯乙酮类,苯偶姻及其烷基酯类,以及呫吨酮及取代呫吨酮类。优选的光引发剂包括二乙氧基苯乙酮,苯偶姻甲醚,苯偶姻乙醚,苯偶姻异丙醚,二乙氧基呫吨酮,氯-硫-呫吨酮,偶氮二异丁腈,N-甲基二乙醇胺二苯甲酮,以及它们的混合物。
合适的光引发剂和增感剂包括阳离子引发剂,它们在暴露于光化性光时典型地产生布朗斯台德酸。产生布朗斯台德酸的适合阳离子光引发剂的例子包括鎓盐,特别是VIA族和VIIA族元素的鎓盐,例如碲鎓盐(byrylium)、盐、锍盐及碘鎓盐。各种合适的光引发剂在美国专利4,161,478,4,442,197,4,139,655,4,400,541,4,197,174,4,173,476及4,299,938中作了讨论,它们的公开内容在此收作参考文献。
也可见Watt等人的论文“阳离子聚合的新颖光引发剂:双[4-(二苯砜基)苯基]硫醚-双-六氟磷酸的制备及表征”,刊于《聚合物科学杂志》,聚合物化学版(Journal of Polymer Science:PolymerChemistry Edition,Vol.22,1789页(1980),John Wiley &Sons公司)。
涉及锍盐及碘鎓盐的其他讨论可参考例如,Crivello等人的论文,“络合物三芳基锍盐光引发剂,II,若干新的络合物三芳基锍盐的制备及其结构对光引发阳离子聚合反应的影响”,刊于《聚合物科学杂志》,聚合物化学版(Journal of Polymer Science:Polymer ChemistryEdition,Vol.18,2697-2714页(1980),John Wiley&Sons公司);Pappas等人的论文,“阳离子聚合反应的光引发,III,二苯基碘鎓盐及三苯基锍盐的光敏化”,刊于《聚合物科学杂志》,聚合物化学版(Journal of Polymer Science:Polymer Chemistry Edition,Vol.22,77-84页(1984),John Wiley&Sons公司);Crivello等人的论文,“以三芳基锍基光引发的阳离子聚合反应”,刊于《聚合物科学杂志》,聚合物化学版(Journal of Polymer Science:PolymerChemistry Edition,Vol.17,977-999页(1979),John Wiley&Sons公司);Crivello等人的论文,“络合物三芳基锍盐光引发剂,I,新型三芳基锍盐光引发剂的鉴别、表征及合成”,刊于《聚合物科学杂志》,聚合物化学版(Journal of Polymer Science:PolymerChemistry Edition,Vol.18,2677-2695页(1980),JohnWiley&Sons公司);以及Crivello的论文,“阳离子聚合反应-碘鎓盐及锍盐光引发剂”,刊于《聚合物科学进展》系列第62号(Advancesin Polymer Science,Series#62,1-48页(1984),Springer-Verlag)。
优选的光致酸产生剂或光致酸引发剂(photoacid generators orinitiators)是三氟甲磺酸产生剂以及取代的和未取代的二芳基和三芳基锍盐和碘鎓盐。
产生三氟甲磺酸的化合物包括鎓盐例如二苯基碘鎓三氟甲酸酯,二(叔丁基苯)碘鎓三氟甲酸酯及三苯基锍三氟甲酸酯,和非离子化合物例如邻苯二甲酰亚胺三氟甲酸酯。
可以使用二苯基碘鎓三氟甲酸酯,二(叔丁基苯基)碘鎓三氟甲酸酯或邻苯二甲酰亚胺三氟甲酸酯的混合物。
因此,根据本发明可以使用的芳族碘鎓盐包括具有下列通式的那些:式中Ar1和Ar2是具有4~20个碳原子的芳基,并优选选自苯基、萘基、噻吩基和呋喃基;及
Q-是任何一种阴离子,但优选是选自四氟硼酸根,六氟磷酸根,六氟砷酸根,六氟锑酸根,三氟甲烷磺酸根或三氟乙酸根的阴离子。
在适用的碘鎓盐中特别包括下面这些:
二苯基碘鎓六氟砷酸酯
二苯基碘鎓六氟锑酸酯
二苯基碘鎓六氟磷酸酯
二苯基碘鎓三氟乙酸酯
4-三氟甲基苯基苯基碘鎓四氟硼酸酯
二甲苯基碘鎓六氟磷酸酯
二(4-甲氧苯基)碘鎓六氟锑酸酯
二苯基碘鎓三氟甲烷磺酸酯
二(叔丁苯基)碘鎓六氟锑酸酯
二(叔丁苯基)碘鎓三氟甲烷磺酸酯
(4-甲基苯基)苯基碘鎓四氟硼酸酯
二(2,4-二甲基苯基)碘鎓六氟锑酸酯
二(4-叔丁基苯基)碘鎓六氟锑酸酯
2,2′-二苯基碘鎓六氟磷酸酯。
适用于本发明的能量可聚合组合物的其他固化剂,包括含有选自下列元素的金属原子的有机金属化合物:周期表IVB族元素(Ti,Zr,Hf),VB族元素(V,Nb,Ta),VIB族元素(Cr,Mo,W),VIIB族元素(Mn,Tc,Re),及通常称为过渡金属的VIII族元素(Fe,Ru,Os,Co,Rh,Ir,Ni,Pd,Pt)。
可见光引发剂包括莰醌过氧化酯引发剂类和9-芴羧酸过氧化酯类。特别优选的光引发剂包括2-羟基-2-甲基-1-苯基-丙-1-酮,它以Darocur1173的名称得自EM Industries公司,以及2-苄基-2-(二甲氨基)-1-[4-(4-吗啉基)苯基]-1-丁酮,它以Irgacure 369及Irgacure 261的名称得自Ciba。
所用的光引发剂的用量应足以引发光化学反应。通常光引发剂的量基于树脂组合物的重量按干组分计,为约0.1~约10%重量,优选为约0.4~约1.0%重量。
适用于实施本发明的催化剂包括可以促进氰酸酯树脂组分固化的热活化催化剂。这类催化剂的例子包括有机金属化合物,例如环烷酸铅,硬脂酸铅,环烷酸锌,辛酸锌,油酸锡,月桂酸亚锡,马来酸二丁基锡,环烷酸锰,环烷酸钴,乙酰丙酮酸铁,等等;无机金属盐如SnCl3,ZnCl2及AlCl3;酚类化合物例如苯酚,二甲苯酚,甲酚,间苯二酚,邻苯二酚,和氟代甘氨酸;以及包括一种或多种有机金属化合物的有机金属组分在酚类组分中的溶液。
在此优选实施方案中,有机金属组分的存在量为树脂组合物以固含量计约0.01%~约1.0%。在树脂组合物中酚类组分的存在量以固含量计为约0.5%~约10%重量。
优选的有机金属盐包括乙酰丙酮酸铜(II),环烷酸铜(II),乙酰丙酮酸钴(II),环烷酸锌(II),乙基己酸锌(II),环烷酸锰(II),及环戊二烯铁(II)二羰基二聚物。这些有机金属盐中的每一种均容易从各种来源例如Strem Chemical公司,Newburyport,Mass得到。其他优选的有机金属盐包括二月桂酸二丁基锡(IV),从AtochemNorth America公司,Buffalo,NY得到。
优选的酚类化合物包括壬酚,双酚A,甲酚,苯酚及邻苯二酚,它们中的每一种容易从各种来源得到,包括从Aldrich Chemical公司,Milwaukee,Wis得到。
此组合物应用时的粘度应为约100kcps至约400kcps。
当以足够压力把半导体芯片1放到粘合剂图形上时,沿着芯片的边缘产生粘合剂轮廓线。典型地以约0.5~约25psi的压力,更典型地以约1~约10psi的压力将芯片放上去。
如果需要,此粘合剂组合物可含有热导电性填料颗粒,例如银,以保证不打火花,和/或含有非导电填料。其他适用填料包括氧化铝及氧化硅。当使用这些颗粒时,它们的粒径范围通常为约0.5~约150微米,其使用量以树脂组合物的重量计为约40~约80重量份。
在放上芯片之前或之后,把此组合物用光化性光进行处理以便使组合物交联和防止树脂渗出或散开在导线焊接片上。
光化辐射优选紫外光辐射,能量范围为约100~约250毫焦/平方厘米,更典型地为约500~约1500毫焦/平方厘米。曝光时间典型地为约30~约120秒。
在放上芯片及把组合物暴露于光化辐射后,把此组件在约140~约215℃,更典型为约160~约180℃的高温下后烘烤约5~约30分钟,更典型地为约6~约12分钟。这导致粘合剂组合物最终硬化,以提供必需的坚固粘结接合。
下列非限制性实施例用于进一步解释本发明。除非另有指出,所给出的量均为重量份(pbw)。
                       实施例
 1     2     3     4     5
氰酸酯Arocy L-10  2     10     7.5     5     3
Arocy B-30  8     3.6     5.3     7
Epon 828     11     10     8.5     4
ER1-4221     1.5     2
Ebecryl     0.5
二丙烯酸新戊二醇酯     4
二季戊四醇单羟基五丙烯酸酯(DPEMPA)     4
乙氧基化三羟甲基丙烷三丙烯酸酯(ETMPTA)     2
壬基酚  0.2     0.2     0.3     0.2     0.3
Irgacure 261     0.18     0.25
Irgacure 651     0.6     0.5
UVI-6974  0.35
环烷酸铜(8%Cu)     0.03
己酸锰(6%Mn)  0.03     0.02     0.02     0.03
银片  25     65     48     32
过氧化月桂酰     0.1
二氧化硅(球形)陶土5000E     2.1
氧化铝     34.5
本发明的上述描述解释和描述了本发明。此外,如上所述,此公开仅表示和描述了本发明的优选实施方案。应该明白,本发明可用于各种其他的组合、改进和环境,而且在这里所表达的本发明概念范围之内,它可以进行与上述讲授和/或相关技术领域的技术或知识相称的改变或改进。上述实施方案进一步用于解释实施本发明的已知最好模式,用于使本领域技术熟练人员以这种、或其他种实施方案,以及,连同本发明的特殊应用或使用所要求的各种改性形式运用本发明。因此,本描述不打算把本发明局限于前述形式。此外,本描述也旨在把所附权利要求解释为包括替代的实施方案。

Claims (22)

1.一种具有金属电路及导线焊接片的有机芯片载体以及用具有双重固化性能的光固化粘合剂粘接到该载体上并通过引线接合法与该导线焊接片相互电连接的集成电路芯片。
2.权利要求1的结构,其中该粘合剂是光阳离子固化及热固化粘合剂。
3.权利要求1的结构,其中该粘合剂是导电的。
4.权利要求3的结构,其中该粘合剂包含导电银颗粒。
5.权利要求1的结构,其中该粘合剂包含树脂组分,而此组分又包括:
包含至少一种可热固化的多环氧树脂的环氧组分;包含至少一种可被光化辐射固化的多烯属不饱和单体的烯属不饱和单体组分;以及至少一种氰酸酯。
6.权利要求5的结构,其中该粘合剂还包含至少一种光引光剂;至少一种有机过氧化物;至少一种热活化固化剂,它选自:有机金属化合物、无机金属盐、酚类化合物、有机金属化合物在酚类化合物中的溶液以及它们的混合物;和填料。
7.权利要求1的结构,其中该粘合剂包含:
1)树脂组分,它包括:
a.包括至少一种可热固化多环氧化物树脂的环氧组分,其量为约25~约70%重量;
b.包括至少一种可光化辐射固化的多烯属不饱和单体的烯属不饱和单体组分,其量为约5~约30%重量;及
c.至少一种氰酸酯,其量为约25~约50%重量;
2)至少一种光引发剂,其量为树脂组分1)重量的约0.1~约10%;
3)至少一种有机过氧化物,其量为树脂组分1)重量的约0.2~约2%;
4)至少一种促进该氰酸酯、环氧化物以及它们的组合的反应的热活化固化剂,它选自:有机金属化合物、无机金属盐、酚类化合物、有机金属化合物在酚类化合物中的溶液以及它们的混合物,其量为树脂组分1)重量的约0.01~约1.0%。
8.权利要求7的结构,其中该粘合剂还包含填料,其量为树脂组分1)重量的约40~约80%。
9.一种制造半导体集成电路组件的方法,使用它时集成电路粘合剂不散开到组件的焊爪连接上,此方法包括:
在集成电路载体的选定区域,提供具有双重固化性能的光固化粘合剂组合物;
将集成电路芯片放到该粘合剂组合物上并与之接触,沿着芯片边缘形成粘合剂轮廓线;
把该粘合剂暴露于光化辐射中;
然后进行后烘烤以固化粘合剂组合物。
10.权利要求9的方法,其中在芯片放到此粘合剂上之后,该粘合剂暴露在光化辐射中处理。
11.权利要求9的方法,其中在该粘合剂暴露在光化辐射中处理后,将该芯片放到此粘合剂之上。
12.权利要求9的方法,其中该光化辐射是UV辐射。
13.权利要求9的方法,其中该后烘烤在温度约140~约215℃下进行。
14.权利要求9的方法,其中该粘合剂是可光阳离子固化及可热固化的粘合剂组合物。
15.权利要求9的方法,其中该粘合剂包含树脂组分,而此组分包括:
包含至少一种可热固化的多环氧树脂的环氧组分;包含至少一种可被光化辐射固化的多烯属不饱和单体的烯属不饱和单体组分;以及至少一种氰酸酯。
16.权利要求15的方法,其中该粘合剂还包含至少一种光引发剂;至少一种有机过氧化物;至少一种热活化固化剂,它选自:有机金属化合物、无机金属盐、酚类化合物、有机金属化合物在酚类化合物中的溶液及它们的混合物;以及填料。
17.权利要求9的方法,其中该粘合剂包含:
1)树脂组分,它包括:
a.包含至少一种可热固化的多环氧化物树脂的环氧组分,其量为约25~约70%重量;
b.包含至少一种可被光化辐射固化的多烯属不饱和单体的烯属不饱和单体组分,其量为约5~约30%重量;及
c.至少一种氰酸酯,其量为约25~约50%重量;
2)至少一种光引发剂,其量为树脂组分1)重量的约0.1~约10%;
3)至少一种有机过氧化物,其量为树脂组分1)重量的约0.2~约2%;
4)至少一种促进该氰酸酯、环氧化物以及它们的组合的反应的热活化固化剂,它选自:有机金属化合物、无机金属盐、酚类化合物、有机金属化合物在酚类化合物中的溶液以及它们的混合物,其量为树脂组分1)重量的约0.01~约1.0%。
18.权利要求17的方法,其中该粘合剂还包含填料,其为树脂组分1)重量的约40~80%。
19.具有双重固化性能的粘合剂组合物,它包含:
1)树脂组分,它包括:
a.包括至少一种可热固化的多环氧树脂的环氧组分;
b.包括至少一种可被光化辐射固化的多烯属不饱和单体的烯属不饱和单体组分;及
c.至少一种氰酸酯;
2)至少一种光引发剂;
3)至少一种有机过氧化物;和
4)至少一种热活化固化剂,它选自:有机金属化合物、无机金属盐、酚类化合物、有机金属化合物在酚类化合物中的溶液以及它们的混合物。
20.权利要求19的粘合剂组合物,它还包含填料。
21.权利要求19的粘合剂组合物,它包括:
1)树脂组分,它包括:
a.包括至少一种可热固化的多环氧化物树脂的环氧组分,其量为约25~约70%重量;
b.包括至少一种可光化辐射固化的多烯属不饱和单体的烯属不饱和单体组分,其量为约5~约30%重量;及
c.至少一种氰酸酯,其量为约25~约50%重量;
2)至少一种光引发剂,其量为树脂组分重量的约0.1~约10%;
3)至少一种有机过氧化物,其量为树脂组分重量的约0.2~约2%;
4)至少一种促进该氰酸酯、环氧化物及它们的组合的反应的热活化固化剂,该热活化固化剂选自:有机金属化合物、无机金属盐、酚类化合物、有机金属化合物在酚类化合物中的溶液以及它们的混合物,其量为树脂组分重量的约0.01~约1.0%。
22.权利要求21的粘合剂组合物,它还包含填料,其量基于树脂组分重量的约40~约80%。
CNB991084462A 1998-07-13 1999-06-11 减少粘合剂掺出的芯片连接 Expired - Fee Related CN1186805C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11472598A 1998-07-13 1998-07-13
US09/114725 1998-07-13
US09/114,725 1998-07-13

Publications (2)

Publication Number Publication Date
CN1241807A true CN1241807A (zh) 2000-01-19
CN1186805C CN1186805C (zh) 2005-01-26

Family

ID=22357060

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB991084462A Expired - Fee Related CN1186805C (zh) 1998-07-13 1999-06-11 减少粘合剂掺出的芯片连接

Country Status (6)

Country Link
US (1) US6734569B2 (zh)
KR (1) KR100339183B1 (zh)
CN (1) CN1186805C (zh)
HK (1) HK1025183A1 (zh)
MY (1) MY133136A (zh)
SG (1) SG79267A1 (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105895589A (zh) * 2014-12-31 2016-08-24 意法半导体有限公司 半导体器件、半导体封装体以及用于制造半导体器件的方法
CN108350145A (zh) * 2015-09-04 2018-07-31 卡本有限公司 用于增材制造的氰酸酯双重固化树脂
CN109712901A (zh) * 2018-12-29 2019-05-03 张家港意发功率半导体有限公司 半导体芯片的封装方法
CN112480324A (zh) * 2019-09-11 2021-03-12 中国科学院福建物质结构研究所 一种制备光固化树脂的原料组合物、由其制备的光固化树脂及其应用

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521115B2 (en) * 2002-12-17 2009-04-21 Intel Corporation Low temperature bumping process
JP2005244150A (ja) * 2004-01-28 2005-09-08 Ajinomoto Co Inc 樹脂組成物、それを用いた接着フィルム及び多層プリント配線板
US7364945B2 (en) * 2005-03-31 2008-04-29 Stats Chippac Ltd. Method of mounting an integrated circuit package in an encapsulant cavity
US7354800B2 (en) * 2005-04-29 2008-04-08 Stats Chippac Ltd. Method of fabricating a stacked integrated circuit package system
KR100673778B1 (ko) * 2005-08-19 2007-01-24 제일모직주식회사 저온 속경화형 이방성 도전 필름용 조성물, 그로부터제조된 이방성 도전 필름 및 그 제조방법
US7456088B2 (en) 2006-01-04 2008-11-25 Stats Chippac Ltd. Integrated circuit package system including stacked die
US7768125B2 (en) 2006-01-04 2010-08-03 Stats Chippac Ltd. Multi-chip package system
US7750482B2 (en) * 2006-02-09 2010-07-06 Stats Chippac Ltd. Integrated circuit package system including zero fillet resin
US8704349B2 (en) 2006-02-14 2014-04-22 Stats Chippac Ltd. Integrated circuit package system with exposed interconnects
US8120168B2 (en) * 2006-03-21 2012-02-21 Promerus Llc Methods and materials useful for chip stacking, chip and wafer bonding
JP5176076B2 (ja) * 2008-01-16 2013-04-03 日立化成株式会社 感光性接着剤組成物、フィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、半導体装置、及び、半導体装置の製造方法
CN102124068A (zh) * 2008-02-25 2011-07-13 汉高股份两合公司 自圆倒角化芯片粘接膏
CN103258804B (zh) * 2008-02-25 2017-03-01 汉高股份两合公司 自圆倒角化芯片粘接膏
CN102405524A (zh) * 2009-02-20 2012-04-04 国家半导体公司 集成电路微模块
US7843056B2 (en) * 2009-02-20 2010-11-30 National Semiconductor Corporation Integrated circuit micro-module
TWI405302B (zh) * 2009-02-20 2013-08-11 Nat Semiconductor Corp 積體電路微模組
US8187920B2 (en) * 2009-02-20 2012-05-29 Texas Instruments Incorporated Integrated circuit micro-module
US7901984B2 (en) * 2009-02-20 2011-03-08 National Semiconductor Corporation Integrated circuit micro-module
US7842544B2 (en) * 2009-02-20 2010-11-30 National Semiconductor Corporation Integrated circuit micro-module
US7898068B2 (en) * 2009-02-20 2011-03-01 National Semiconductor Corporation Integrated circuit micro-module
US7902661B2 (en) * 2009-02-20 2011-03-08 National Semiconductor Corporation Integrated circuit micro-module
US7901981B2 (en) * 2009-02-20 2011-03-08 National Semiconductor Corporation Integrated circuit micro-module
CN102933670B (zh) * 2010-06-08 2015-03-11 汉高美国知识产权有限责任公司 双固化粘合剂
DE102011114559B4 (de) * 2011-09-30 2020-06-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend eine Haftschicht, Verfahren zur Herstellung einer Haftschicht in einem optoelektronischen Bauelement und Verwendung eines Klebstoffes zur Bildung von Haftschichten in optoelektronischen Bauelementen
US10000670B2 (en) 2012-07-30 2018-06-19 Henkel IP & Holding GmbH Silver sintering compositions with fluxing or reducing agents for metal adhesion
JP7519752B2 (ja) 2015-05-08 2024-07-22 ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェン 焼結可能フィルムおよびペーストおよびその使用方法
AT526075B1 (de) * 2022-06-23 2023-11-15 Univ Wien Tech Cyanatester als Monomere in polymerisierbaren Zusammensetzungen

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4161478A (en) 1974-05-02 1979-07-17 General Electric Company Photoinitiators
US4769399A (en) 1987-03-12 1988-09-06 Minnesota Mining And Manufacturing Company Epoxy adhesive film for electronic applications
JPH0715087B2 (ja) 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
US4975221A (en) 1989-05-12 1990-12-04 National Starch And Chemical Investment Holding Corporation High purity epoxy formulations for use as die attach adhesives
CA2038117A1 (en) 1990-03-29 1991-09-30 Mahfuza B. Ali Controllable radiation curable photoiniferter prepared adhesives for attachment of microelectronic devices and a method of attaching microelectronic devices therewith
US5130229A (en) 1990-04-26 1992-07-14 International Business Machines Corporation Multi layer thin film wiring process featuring self-alignment of vias
US5143785A (en) 1990-08-20 1992-09-01 Minnesota Mining And Manufacturing Company Cyanate ester adhesives for electronic applications
US5371178A (en) 1990-10-24 1994-12-06 Johnson Matthey Inc. Rapidly curing adhesive and method
US5155066A (en) * 1990-10-24 1992-10-13 Johnson Matthey Inc. Rapid-curing adhesive formulation for semiconductor devices
US5261156A (en) 1991-02-28 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
US5524422A (en) 1992-02-28 1996-06-11 Johnson Matthey Inc. Materials with low moisture outgassing properties and method of reducing moisture content of hermetic packages containing semiconductor devices
US5523374A (en) 1992-12-03 1996-06-04 Hercules Incorporated Curable and cured organosilicon compositions
US5409863A (en) 1993-02-19 1995-04-25 Lsi Logic Corporation Method and apparatus for controlling adhesive spreading when attaching an integrated circuit die
US5539012A (en) 1993-08-18 1996-07-23 Loctite Corporation Fiber/resin composites and method of preparation
US5679719A (en) 1993-03-24 1997-10-21 Loctite Corporation Method of preparing fiber/resin composites
US5565499A (en) 1993-03-24 1996-10-15 Loctite Corporation Filament-winding compositions for fiber/resin composites
KR0124788B1 (ko) 1994-06-16 1997-11-26 황인길 반도체 패키지용 구리산화물-충진 폴리머 다이 어태치 접착제 조성물
TW340132B (en) 1994-10-20 1998-09-11 Ibm Structure for use as an electrical interconnection means and process for preparing the same
US5708129A (en) 1995-04-28 1998-01-13 Johnson Matthey, Inc. Die attach adhesive with reduced resin bleed
DE19755088A1 (de) * 1997-12-11 1999-06-17 Daimler Chrysler Ag Kalibriervorrichtung zum Verkleben von Scheiben
JP2000077434A (ja) * 1998-09-03 2000-03-14 Sony Corp 素子の組み付け方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105895589A (zh) * 2014-12-31 2016-08-24 意法半导体有限公司 半导体器件、半导体封装体以及用于制造半导体器件的方法
CN108350145A (zh) * 2015-09-04 2018-07-31 卡本有限公司 用于增材制造的氰酸酯双重固化树脂
US11040483B2 (en) 2015-09-04 2021-06-22 Carbon, Inc. Cyanate ester dual cure resins for additive manufacturing
US11090859B2 (en) 2015-09-04 2021-08-17 Carbon, Inc. Cyanate ester epoxy dual cure resins for additive manufacturing
CN109712901A (zh) * 2018-12-29 2019-05-03 张家港意发功率半导体有限公司 半导体芯片的封装方法
CN112480324A (zh) * 2019-09-11 2021-03-12 中国科学院福建物质结构研究所 一种制备光固化树脂的原料组合物、由其制备的光固化树脂及其应用

Also Published As

Publication number Publication date
CN1186805C (zh) 2005-01-26
US20030119226A1 (en) 2003-06-26
SG79267A1 (en) 2001-03-20
MY133136A (en) 2007-10-31
HK1025183A1 (en) 2000-11-03
KR20000011287A (ko) 2000-02-25
KR100339183B1 (ko) 2002-05-31
US6734569B2 (en) 2004-05-11

Similar Documents

Publication Publication Date Title
CN1186805C (zh) 减少粘合剂掺出的芯片连接
JP3989142B2 (ja) バイアおよびめっきスルーホールの充填用組成物およびその使用
EP0843685B1 (en) Ionizing radiation curing of epoxy resin systems incorporating cationic photoinitiators
US5310840A (en) Energy-polymerizable adhesive, coating and film
US20040102566A1 (en) B-stageable die attach adhesives
JP2009051954A (ja) 光および加熱硬化性組成物とその硬化物
WO1996011239A1 (fr) Encre resist de photosoudure, carte a circuit imprime et procede de fabrication
KR20110041925A (ko) 이중층 패턴형성용 접착필름, 이의 제조방법, 및 이를 이용한 패턴 접착층의 형성방법
JP2007197518A (ja) エポキシ樹脂化合物、熱硬化性樹脂組成物、及び感光性組成物
TW200400211A (en) Curable resins and curable resin compositions containing the same
US20020132873A1 (en) Lead protective coating composition, process and structure thereof
JP2011075787A (ja) 感光性組成物
JP6596957B2 (ja) 導体回路を有する構造体及びその製造方法並びに感光性樹脂組成物
DE60220446T2 (de) Harzzusammensetzung
JP2013251369A (ja) 半導体装置の製造方法及びそれに用いる熱硬化性樹脂組成物並びにそれにより得られる半導体装置
JP2000007758A (ja) B−ステージ化できる液状エポキシ樹脂組成物
JP5002479B2 (ja) 硬化皮膜パターン形成用組成物及びそれを用いた硬化皮膜パターン作製方法
JP6518101B2 (ja) 光硬化性導電材料、接続構造体及び接続構造体の製造方法
JPH0678512B2 (ja) 光硬化性接着剤
KR102390512B1 (ko) 감광성 수지 조성물 및 솔더 레지스트
JP2003165827A (ja) 感光性熱硬化樹脂組成物
JP4293483B2 (ja) 変性共重合体及び樹脂組成物
JP2018067688A (ja) 導体回路を有する構造体の製造方法、感光性樹脂組成物及び感光性樹脂フィルム、並びに熱硬化性樹脂組成物及び熱硬化性樹脂フィルム
JPH10231354A (ja) エポキシ樹脂組成物、熱硬化性樹脂フィルム及び基板に対する硬化樹脂フィルムの形成方法
JP2009046569A (ja) 感光性接着剤組成物

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050126