CN102124068A - 自圆倒角化芯片粘接膏 - Google Patents
自圆倒角化芯片粘接膏 Download PDFInfo
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- CN102124068A CN102124068A CN200880127436XA CN200880127436A CN102124068A CN 102124068 A CN102124068 A CN 102124068A CN 200880127436X A CN200880127436X A CN 200880127436XA CN 200880127436 A CN200880127436 A CN 200880127436A CN 102124068 A CN102124068 A CN 102124068A
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Abstract
一种自动流动(自流动)且形成圆倒角(自圆倒角)的组合物具有在1.8Pa至10Pa(18达因/cm2至100达因/cm2)范围内的屈服应力。此组合物可以通过使用适当选择的填料来设计,而与该组合物中使用的树脂系统无关。
Description
发明背景
微电子器件含有由各种类型的衬底支撑的许多电路元件。所述元件包括半导体硅片(芯片)。这些元件与衬底之间的电连接在芯片上的电端子与衬底上的相应电端子之间形成。一种形成这些连接的方法使用膏状芯片粘接粘合剂,将半导体芯片粘着至衬底和金属线,以便将芯片上的端子与衬底上的端子粘结。
在这种芯片粘接工艺中,在足够程度的压力和/或热下使芯片与芯片粘接粘合剂接触,以便粘合剂铺开并完全覆盖芯片下的衬底。期望粘合剂进一步在芯片的周围形成圆倒角(fillet),即隆起的边或脊。
当使用薄芯片并且当堆叠芯片时,在分配芯片粘接粘合剂时出现问题。常规的膏状芯片粘接材料不适合这些应用,原因在于所述芯片粘接材料不容易在期望的边界形成圆倒角并且可能容易溢流入半导体封装中塞满的固定元件中,并污染相邻的芯片和电互连,或者溢流到芯片的顶部,这将影响随后的引线粘合工艺。另外,在不施加压力的情况下很难获得适当水平的粘合剂流动和粘合。当将压力施加于薄芯片时,芯片可能破裂或倾斜或扭曲。
优选的是应用这样的芯片粘接材料,其具有合适的流变学,以便在不施加压力和/或热或者压力和/或热施加最小化的情况下自动地流动并填充待被粘着的区域,且在该区域的周边精确且均匀地形成圆倒角,而粘合剂不会扩展到周围区域上。
发明概述
本发明人已经发现,一种在25℃(环境温度)下自动流动(自流动(auto-flow))且形成圆倒角(自圆倒角(self-fillet))的组合物具有在1.8Pa至10Pa(18达因/cm2至100达因/cm2)范围内的屈服应力。此类组合物可以通过使用适当选择的填料来设计,而与该组合物中使用的树脂系统无关。因此,本发明是包含树脂和填料的组合物,其特征在于所述组合物具有1.8Pa至10Pa范围内的屈服应力,从而在25℃下自动流动并形成圆倒角。屈服应力是组合物从粘弹性固体转变为剪切稀化液体时的值,并且为了本说明书和权利要求的目的,屈服应力通过在发明详述中公开的方案测量。
发明详述
自流动是指芯片粘接粘合剂在被布置于两个衬底之间并与这些衬底接触时在室温下开始流动,而无需施加超过轻微压力的压力,并且覆盖两个衬底之间的区域。衬底可以指半导体芯片的衬底,或半导体芯片本身,诸如在两个或更多个芯片以堆叠布局排列时发生的情况。使用半导体衬底与半导体芯片的组合,自圆倒角是指芯片粘接粘合剂在衬底上的芯片的周边处将停止其自流动,并凝固而沿芯片外围周围形成圆倒角,而不会溢流到芯片的顶部或者扩展到除芯片紧邻附近外的衬底上的区域中。圆倒角是隆起的边或脊,并且可具有弯曲的内角。在两个或更多个芯片以堆叠布局排列的情况中,在衬底是另一芯片的情况下圆倒角可能不是期望的。通过调整轻微压力和/或屈服应力范围内的屈服应力,对于这种布局可以避免圆倒角,尽管如所述膏能够自圆倒角化。
屈服应力在25℃在应力下从产生自包含树脂和填料的组合物的流变曲线测定。方案如下,利用流变仪AR2000EX:组合物起初被剪切,直到其从粘弹性固体转变为液体;使其平衡;从0.1Pa至200Pa施加剪切应力;然后将应力从200Pa降至0.1Pa。每个步骤的持续时间通常在二至十分钟之间。每个步骤的实际持续时间针对每种组合物如下测定:运行该方案,其中每个步骤的持续时间为二分钟,然后以十分钟再次运行该方案。如果屈服应力的测量在十分钟时与在两分钟时相同,则两分钟被用作每个步骤的持续时间。如果不同,则十分钟时的屈服应力被采纳作为实际的屈服应力值。任意地,实践者可以以不同的持续时间针对每一步骤进行数次方案运行,直到结果不再变化,并对于每个步骤采用产生一致屈服应力值的最低持续时间。记录剪切应力施加(从0.1Pa至200Pa)的渐升曲线模拟芯片粘接粘合剂的分配过程;芯片粘接粘合剂通常通过注射器分配并且注射器活塞的压力在粘合剂上施加剪切应力。记录剪切应力减小(从200Pa至0.1Pa)的渐降曲线模拟芯片与粘合剂接触时的芯片粘接过程。本发明人发现渐降曲线更精确地预测发生自流动和自圆倒角化时的屈服应力。
驱动自流动和自圆倒角化的力主要来自粘合剂膏与芯片之间的能量相互作用。当这些驱动力小于粘合剂的屈服应力时,自流动和自圆倒角化将不会发生。这些驱动力取决于半导体封装设计,其影响诸如芯片厚度、粘合层(bond line)厚度、粘合剂膏密度、芯片和衬底的表面能以及粘合剂、芯片与衬底的界面能等参数。在目前的封装设计中,典型的驱动力为约10Pa;因此,当芯片粘接粘合剂的屈服应力小于10Pa时,粘合剂膏将自流动。如果屈服应力太低而不能抵抗粘合剂膏与芯片之间的能量相互作用,则发生溢流,并且尽管粘合剂将自圆倒角化,但是其不会在芯片的周边自圆倒角化。在屈服应力小于约1.8Pa时这通常发生。
对于带填料的树脂体系,屈服应力将取决于填料颗粒与树脂之间相互作用的性质。因此,为设计具有适当的屈服应力以满足上述流变学的组合物,关键的成分是填料。通常,在相同的填料装载量下,较小粒度的填料相比较大粒度的填料产生更高的屈服应力值,并且较高的填料装载量产生较高的屈服应力。
自流动和自圆倒角化通过适当选择在组合物中使用的、以有效获得1.8Pa至10Pa范围内的屈服应力的填料的量、大小和形状来实现。填料的形状可以是颗粒或薄片或两者的组合。填料可以是范围为纳米尺寸至数毫米的任何大小。填料的量可变,以提供在有效产生自流动和自圆倒角化的范围内的屈服应力。借助本说明书的公开,确定实际填料水平的实验在本领域技术人员的技能内,而无需不适当的实验。
示例性非传导性填料包括二氧化硅(包括热解法二氧化硅和其它类型的二氧化硅)、碳化硅、一氮化硼、金刚石、氧化铝、氢氧化铝、蛭石、云母、硅灰石、碳酸钙、二氧化钛、砂、玻璃、硫酸钡、锆、炭黑、有机填料和卤化乙烯聚合物诸如四氟乙烯、三氟乙烯、1,1-二氟乙烯、氟乙烯、1,1-二氯乙烯、氯乙烯,以及这些物质的组合。
在一个实施方式中,填料是非传导性的,并且具体是二氧化硅填料。热解法二氧化硅比球形二氧化硅显示出高得多的屈服应力。在各种实施方式中,使用球形二氧化硅和热解法二氧化硅的组合并且其是调整流变学至期望的屈服应力范围的有效途径。
示例性导电或导热填料包括炭黑和石墨;金、银、铜、铂、钯、镍、铝,以及这些彼此或与其它金属的合金,其它金属合金,以及镀金属颗粒;镀金属的玻璃、有机聚合物或二氧化硅球或类似物,并且具体地,镀有金、银、铜、铂、钯、镍、铝以及这些彼此的合金。
合适的树脂是热固性或热塑性聚合物。在各种实施方式中,这些聚合物选自环氧、马来酰亚胺(包括双马来酰亚胺)、丙烯酸酯和甲基丙烯酸酯、以及氰酸酯、乙烯基醚、硫醇-烯、含有连接到芳香环并且与芳香环中未饱和部分共轭的碳碳双键的树脂(诸如衍生自肉桂基和苯乙烯起始化合物的化合物)、延胡索酸酯和马来酸酯。在各种其它实施方式中,这些聚合物包括聚酰胺、苯氧基化合物、苯并嗪、聚苯并嗪、聚醚砜、聚酰亚胺、硅氧烷化烯烃(siliconized olefin)、聚烯烃、聚酯、聚苯乙烯、聚碳酸酯、聚丙烯、聚(氯乙烯)、聚异丁烯、聚丙烯腈、聚(乙酸乙烯酯)、聚(2-乙烯基吡啶)、顺式-1,4-聚异戊二烯、3,4-聚氯丁二烯、乙烯基共聚物、聚(环氧乙烷)、聚(乙二醇)、聚甲醛、聚乙醛、聚(b-丙醇酸内酯)、聚(10-癸酸酯)、聚(对苯二甲酸乙二酯)、聚己内酰胺、聚(11-十一烷酰胺)、聚(间-亚苯基-对苯二甲酸酰胺)、聚(四亚甲基-间-苯磺酸酰胺)、聚酯聚芳基化物、聚(苯醚)、聚(苯硫醚)、聚砜、聚醚酮、聚醚酰亚胺、氟化的聚酰亚胺、聚酰亚胺硅氧烷、聚-异吲哚并-喹唑啉二酮、聚硫醚酰亚胺聚-苯基-喹喔啉、聚喹喔酮(polyquinixalone)、酰亚胺-芳基醚苯基喹喔啉共聚物、聚喹喔啉、聚苯并咪唑、聚苯并唑、聚降冰片烯、聚(芳撑醚)、聚硅烷、聚对亚苯基二甲基、苯并环丁烯、羟基-(苯并唑)共聚物和聚(含硅亚芳基硅氧烷)(poly(silarylene siloxanes))。
合适的环氧树脂包括双酚、萘、和脂族类型的环氧树脂。可商业获得的材料包括双酚型环氧树脂(Epiclon 830LVP、830CRP、835LV、850CRP),从Dainippon Ink&Chemicals,Inc.获得;萘型环氧树脂(Epiclon HP4032),从Dainippon Ink&Chemicals,Inc获得;脂族环氧树脂(Araldite CY179、184、192、175、179),从Ciba Specialty Chemicals获得,(Epoxy 1234、249、206),从Dow Corporation获得,以及(EHPE-3150),从Daicel Chemical Industries,Ltd获得。其它合适的环氧树脂包括脂环族环氧树脂、双酚-A型环氧树脂、双酚-F型环氧树脂、环氧-线型酚醛树脂、二苯基型环氧树脂、萘型环氧树脂和二环戊二烯苯酚型环氧树脂。
合适的马来酰亚胺树脂包括具有下列一般结构的那些:其中n是1到3,X1是脂族或芳族基团。示例性的X1实体包括聚(丁二烯)、聚(碳酸酯)、聚(氨基甲酸酯)、聚(醚)、聚(酯)、简单烃和含有官能团的简单烃——官能团例如羰基、羧基、酰胺、氨基甲酸酯、脲、酯或醚。这些类型的树脂是商业可获得的,并且可以例如从Dainippon Ink and Chemical,Inc.获得。
另外合适的马来酰亚胺树脂包括但不限于,固体芳族双马来酰亚胺(BMI)树脂,特别是具有下列结构的那些,其中Q是芳族基团。具有芳族Q桥连基的双马来酰亚胺是商业可得的,并且可以得自例如Sartomer(USA)或HOS-Technic GmbH(澳大利亚)。
合适的丙烯酸酯和甲基丙烯酸酯树脂包括具有下列一般结构的那些;其中n是1到6,R1是-H或-CH3,和X2是芳族或脂族基团。示例性的X2实体包括聚(丁二烯)、聚(碳酸酯)、聚(氨基甲酸酯)、聚(醚)、聚(酯)、简单烃和含有官能团的简单烃——官能团例如羰基、羧基、酰胺、氨基甲酸酯、脲、酯或醚。商业可获得的材料包括可以从Kyoeisha Chemical Co.,LTD获得的(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸正月桂酯、(甲基)丙烯酸烷基酯、(甲基)丙烯酸十三烷酯、(甲基)丙烯酸正十八烷酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸四氢糠酯、(甲基)丙烯酸2-苯氧基乙酯、(甲基)丙烯酸异冰片酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、(甲基)丙烯酸全氟辛乙酯、1,10-癸二醇二(甲基)丙烯酸酯、壬基酚聚丙氧基化物(甲基)丙烯酸酯和聚戊氧基化物丙烯酸四氢糠酯(polypentoxylate tetrahydrofurfuryl acrylate);可从Sartomer Company,Inc获得的聚丁二烯氨基甲酸乙酯二甲基丙烯酸酯(CN302、NTX6513)和聚丁二烯二甲基丙烯酸酯(CN301、NTX6039、PRO6270);可从NegamiChemical Industries Co.,LTD获得的聚碳酸酯氨基甲酸乙酯二丙烯酸酯(ArtResin UN9200A);可从Radcure Specialities,Inc获得的丙烯酸化脂族氨基甲酸乙酯低聚物(Ebecryl 230、264、265、270、284、4830、4833、4834、4835、4866、4881、4883、8402、8800-20R、8803、8804);可从Radcure Specialities,Inc.获得的聚酯丙烯酸酯低聚物(Ebecryl 657、770、810、830、1657、1810、1830);和可从Sartomer Company,Inc.获得的环氧丙烯酸酯树脂(CN104、111、112、115、116、117、118、119、120、124、136)。在一个实施方式中,丙烯酸酯树脂选自丙烯酸异冰片酯、甲基丙烯酸异冰片酯、丙烯酸月桂酯、甲基丙烯酸月桂酯、具有丙烯酸酯官能度的聚(丁二烯)和具有甲基丙烯酸酯官能度的聚(丁二烯)。
商业可得的氰酸酯材料包括:可从Huntsman LLC获得的AroCyL-10、AroCy XU366、AroCy XU371、AroCy XU378、XU71787.02L和XU 71787.07L;可从Lonza Group Limited获得的Primaset PT30、Primaset PT30S75、Primaset PT60、Primaset PT60S、Primaset BADCY、Primaset DA230S、Primaset MethylCy和Primaset LECY;可从OakwoodProducts,Inc.获得的2-烯丙基苯酚氰酸酯、4-甲氧基苯酚氰酸酯、2,2-二(4-氰氧基苯酚)-1,1,1,3,3,3-六氟丙烷、双酚A氰酸酯、二烯丙基双酚A氰酸酯、4-苯基苯酚氰酸酯、1,1,1-三(4-氰氧基苯基)乙烷、4-枯基酚氰酸酯、1,1-二(4-氰氧基-苯基)乙烷、2,2,3,4,4,5,5,6,6,7,7-十二氟-辛二醇二氰酸酯和4,4’-双酚氰酸酯。
适当的乙烯基醚树脂是含有乙烯基醚官能度的任何物质,并且包括聚(丁二烯)、聚(碳酸酯)、聚(氨基甲酸乙酯)、聚(醚)、聚(酯)、简单烃和含有官能团的简单烃——官能团例如羰基、羧基、酰胺、氨基甲酸酯、脲、酯或醚。商业可获得的树脂包括可从International SpecialityProducts(ISP)获得的环己烷二甲醇二乙烯基醚、十二烷基乙烯基醚、环己烷乙烯基醚、2-乙基己基乙烯基醚、二丙二醇二乙烯基醚、己二醇二乙烯基醚、十八烷基乙烯基醚和丁二醇二乙烯基醚;可从Sigma-Aldrich,Inc.获得的Vectomer 4010、4020、4030、4040、4051、4210、4220、4230、4060、5015。
用于热固性或热塑性聚合物反应物的固化剂可以是自由基引发剂或离子型引发剂(阳离子的或阴离子的),这取决于是选择自由基固化树脂还是离子固化树脂。固化剂将以有效量存在。对于自由基固化剂,有效量通常是有机化合物重量(不包括任何填料)的0.1%至10%,但可以高达按重量计30%。对于离子固化剂或引发剂,有效量通常是有机化合物重量(不包括任何填料)的0.1%至10%,但可以高达按重量计30%。固化剂的实例包括咪唑、叔胺、有机金属盐、胺盐和改性的咪唑化合物、无机金属盐、酚、酸酐和其它这类化合物。
在一些情况中,可希望使用一种以上类型的固化,例如阳离子和自由基引发两种,在这样情况下,自由基固化树脂和离子固化树脂都可被用于组合物中。这样的组合物允许例如:使用紫外线照射由阳离子引发开始固化过程,和在后续处理步骤中,在应用热后由自由基引发完成固化过程。
实施例
在每个实施例中,制备含有树脂和硬化剂(RH)的配制物,其中硬化剂是固化剂。然后以各种装载水平给这些配制物装入填料。在布鲁克菲尔德粘度计上利用CP51转子以5转/分钟(5RPM)测试每种配制物的粘度以及利用来自TA公司的流变仪AR 2000ex测试每种配制物的屈服应力。通过测量0.5RPM下的粘度与5RPM下的粘度比,测定触变指数。利用发明详述中的上述方案测量屈服应力。也利用10mm×10mm、0.175mm厚的玻璃芯片在作为测试载体的载玻片上测试每种配制物的自流动和自圆倒角化。手动进行芯片粘接。为了目前工业目的,长度大于0.15mm的圆倒角被认为是溢出的。在一些样品中,形成的圆倒角低于1.8Pa的屈服应力,但是这些的长度大于0.15mm。
实施例1:丙烯酸酯树脂和填料装载量的影响
在该实施例中,测试填料装载水平和填料类型对包含丙烯酸酯树脂、硬化剂和二氧化硅填料的组合物的影响。所使用的材料的身份和量以及测试的结果公开在表中。
注:二氧化硅SE-15(National Starch&Chemical,粒度<20μm)
二氧化硅SE-1050(Admatechs CO,粒度<2μm)
热解法二氧化硅TS720(Cabot)
实施例2:双马来酰亚胺树脂和填料类型与比率的影响
在该实施例中,测试填料装载水平和填料类型对包含双马来酰亚胺树脂、硬化剂和二氧化硅填料的组合物的影响。所使用的材料和量以及测试结果公开在表中。
双马来酰亚胺1具有如下结构:
其中C36代表具有36个碳原子的直连或支链烃链(含或不含环状部分)。
注意:二氧化硅SE-15(National Starch&Chemical,粒度<20μm)
二氧化硅SE-1050(Admatechs CO,粒度<2μm)
热解法二氧化硅TS720(Cabot)
实施例3:环氧树脂和填料装载影响
在该实施例中,测试填料装载水平和填料类型对包含环氧树脂、硬化剂和二氧化硅填料的组合物的影响。所使用的材料的身份和量以
及测试的结果公开在表中。
注意:二氧化硅SE-15(National Starch&Chemical,粒度<20μm)
二氧化硅SE-1050(Admatechs CO,粒度<2μm)
热解法二氧化硅TS720(Cabot)
实施例4:银填料
在该实施例中,使用银作为填料,其具有与二氧化硅相同的屈服应力。
实施例5:在芯片焊接机上的自圆倒角化材料评价
目前应用中的典型芯片包括但不限于玻璃、含或不含钝化层的(例如一氮化硼、聚酰亚胺)的硅;目前应用中的典型衬底包括但不限于玻璃芯片、硅芯片、BGA、A42、Cu、Ag和PPF。这些材料是本领域技术人员已知的。在该实施例中,在商业芯片焊接机Swissline 9022(来自AlphaSEM)上评价实施例1、2和3的样品,利用10×10mm、0.1mm厚的硅芯片,用PBGA作为衬底,并具有修改的雪花星形分配图案(snowstar dispense pattern)。结果列举在下面的表中,并且与使用玻璃芯片和载玻片衬底通过手动芯片粘接得到的结果一致。
Claims (7)
1.组合物,其包含树脂和填料,其特征在于所述组合物具有1.8Pa至10Pa范围内的屈服应力,从而在25℃自动流动并形成圆倒角。
2.根据权利要求1所述的组合物,其中所述填料选自二氧化硅、热解法二氧化硅、碳化硅、一氮化硼、金刚石、氧化铝、氢氧化铝、蛭石、云母、硅灰石、碳酸钙、二氧化钛、砂、玻璃、硫酸钡、锆、炭黑、有机填料、四氟乙烯、三氟乙烯、1,1-二氟乙烯、氟乙烯、1,1-二氯乙烯、氯乙烯和这些的组合。
3.根据权利要求2所述的组合物,其中所述填料选自二氧化硅和热解法二氧化硅。
4.根据权利要求1所述的组合物,其中所述填料选自炭黑、石墨;金、银、铜、铂、钯、镍、铝、金属合金、镀金属玻璃、镀金属有机聚合物、镀金属二氧化硅和这些的组合。
5.根据权利要求1所述的组合物,其中所述树脂选自环氧、马来酰亚胺、双马来酰亚胺、丙烯酸酯、甲基丙烯酸酯、氰酸酯、乙烯基醚、硫醇-烯、含有连接到芳香环并且与芳香环中未饱和部分共轭的碳碳双键的树脂(诸如衍生自肉桂基和苯乙烯起始化合物的化合物)、延胡索酸酯、马来酸酯、聚酰胺、苯氧基化合物、苯并嗪、聚苯并嗪、聚醚砜、聚酰亚胺、硅氧烷化烯烃、聚烯烃、聚酯、聚苯乙烯、聚碳酸酯、聚丙烯、聚(氯乙烯)、聚异丁烯、聚丙烯腈、聚(乙酸乙烯酯)、聚(2-乙烯基吡啶)、顺式-1,4-聚异戊二烯、3,4-聚氯丁二烯、乙烯基共聚物、聚(环氧乙烷)、聚(乙二醇)、聚甲醛、聚乙醛、聚(b-丙醇酸内酯)、聚(10-癸酸酯)、聚(对苯二甲酸乙二酯)、聚己内酰胺、聚(11-十一烷酰胺)、聚(间-亚苯基-对苯二甲酸酰胺)、聚(四亚甲基-间-苯磺酸酰胺)、聚酯聚芳基化物、聚(苯醚)、聚(苯硫醚)、聚砜、聚醚酮、聚醚酰亚胺、氟化的聚酰亚胺、聚酰亚胺硅氧烷、聚-异吲哚并-喹唑啉二酮、聚硫醚酰亚胺聚-苯基-喹喔啉、聚喹喔酮、酰亚胺-芳基醚苯基喹喔啉共聚物、聚喹喔啉、聚苯并咪唑、聚苯并唑、聚降冰片烯、聚(芳撑醚)、聚硅烷、聚对亚苯基二甲基、苯并环丁烯、羟基-(苯并唑)共聚物、聚(含硅亚芳基硅氧烷),和这些的组合。
6.根据权利要求5所述的组合物,其中所述树脂选自环氧、马来酰亚胺、双马来酰亚胺、丙烯酸酯、甲基丙烯酸酯、氰酸酯、乙烯基醚、硫醇-烯、含有连接到芳香环并且与芳香环中未饱和部分共轭的碳碳双键的树脂(诸如衍生自肉桂基和苯乙烯起始化合物的化合物)、延胡索酸酯,和这些的组合。
7.根据权利要求6所述的组合物,其中所述树脂选自环氧、马拉酰亚胺、双马拉酰亚胺、丙烯酸酯、甲基丙烯酸酯和这些的组合。
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Publication number | Priority date | Publication date | Assignee | Title |
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CN105542704A (zh) * | 2015-12-27 | 2016-05-04 | 上海创益中空玻璃材料有限公司 | 阻燃型高耐候聚硫密封胶及其制备方法 |
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CN102124068A (zh) * | 2008-02-25 | 2011-07-13 | 汉高股份两合公司 | 自圆倒角化芯片粘接膏 |
JP5790253B2 (ja) * | 2011-07-29 | 2015-10-07 | 住友ベークライト株式会社 | 液状樹脂組成物および半導体装置 |
US9477148B1 (en) | 2015-05-26 | 2016-10-25 | Industrial Technology Research Institute | Polymer, method for preparing the same, and a photosensitive resin composition thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1047324A (zh) * | 1989-05-16 | 1990-11-28 | 罗姆和哈斯公司 | 含有交联剂和冲击改性剂的丙烯酯粘合剂组合物 |
US20030119226A1 (en) * | 1998-07-13 | 2003-06-26 | International Business Machines Corporation | Die attachment with reduced adhesive bleed-out |
WO2005007766A1 (en) * | 2003-07-07 | 2005-01-27 | Dow Global Technologies Inc. | Adhesive epoxy composition and process for applying it |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5391604A (en) * | 1993-07-30 | 1995-02-21 | Diemat, Inc. | Adhesive paste containing polymeric resin |
US6444305B2 (en) * | 1997-08-29 | 2002-09-03 | 3M Innovative Properties Company | Contact printable adhesive composition and methods of making thereof |
ES2646296T3 (es) * | 1999-08-17 | 2017-12-13 | Dow Global Technologies Llc | Composición polimérica fluida |
US6750301B1 (en) * | 2000-07-07 | 2004-06-15 | National Starch And Chemical Investment Holding Corporation | Die attach adhesives with epoxy compound or resin having allyl or vinyl groups |
JP2002241469A (ja) * | 2001-02-14 | 2002-08-28 | Nitto Denko Corp | 熱硬化性樹脂組成物および半導体装置 |
TW574739B (en) | 2001-02-14 | 2004-02-01 | Nitto Denko Corp | Thermosetting resin composition and semiconductor device using the same |
JP2003138100A (ja) * | 2001-11-05 | 2003-05-14 | Nippon Steel Chem Co Ltd | フリップチップ実装用エポキシ樹脂組成物及び半導体装置 |
US7000457B2 (en) * | 2003-04-01 | 2006-02-21 | Cabot Corporation | Methods to control and/or predict rheological properties |
US7160946B2 (en) * | 2004-04-01 | 2007-01-09 | National Starch And Chemical Investment Holding Corporation | Method to improve high temperature cohesive strength with adhesive having multi-phase system |
JP4809355B2 (ja) * | 2005-09-02 | 2011-11-09 | 信越化学工業株式会社 | エポキシ樹脂組成物及び該組成物を含むダイボンド剤 |
US7645637B2 (en) * | 2006-10-16 | 2010-01-12 | Henkel Corporation | Methods for assembling thin semiconductor die |
KR100922226B1 (ko) * | 2007-12-10 | 2009-10-20 | 주식회사 엘지화학 | 접착 필름, 다이싱 다이본딩 필름 및 반도체 장치 |
CN102124068A (zh) * | 2008-02-25 | 2011-07-13 | 汉高股份两合公司 | 自圆倒角化芯片粘接膏 |
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- 2008-02-25 WO PCT/CN2008/000393 patent/WO2009105911A1/en active Application Filing
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- 2008-12-10 TW TW097147928A patent/TWI442483B/zh not_active IP Right Cessation
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1047324A (zh) * | 1989-05-16 | 1990-11-28 | 罗姆和哈斯公司 | 含有交联剂和冲击改性剂的丙烯酯粘合剂组合物 |
US20030119226A1 (en) * | 1998-07-13 | 2003-06-26 | International Business Machines Corporation | Die attachment with reduced adhesive bleed-out |
WO2005007766A1 (en) * | 2003-07-07 | 2005-01-27 | Dow Global Technologies Inc. | Adhesive epoxy composition and process for applying it |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105542704A (zh) * | 2015-12-27 | 2016-05-04 | 上海创益中空玻璃材料有限公司 | 阻燃型高耐候聚硫密封胶及其制备方法 |
CN105542704B (zh) * | 2015-12-27 | 2018-02-23 | 上海创益中空玻璃材料有限公司 | 阻燃型高耐候聚硫密封胶及其制备方法 |
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KR20100122100A (ko) | 2010-11-19 |
US20110046268A1 (en) | 2011-02-24 |
EP2250227A4 (en) | 2013-08-21 |
TWI442483B (zh) | 2014-06-21 |
US20120055259A1 (en) | 2012-03-08 |
WO2009105911A1 (en) | 2009-09-03 |
EP2250227A1 (en) | 2010-11-17 |
US8286465B2 (en) | 2012-10-16 |
JP2011514671A (ja) | 2011-05-06 |
JP5250640B2 (ja) | 2013-07-31 |
KR101510665B1 (ko) | 2015-04-10 |
TW200937537A (en) | 2009-09-01 |
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