CN1231507A - 集成电路芯片、集成电路结构体、液晶装置和电子装置 - Google Patents

集成电路芯片、集成电路结构体、液晶装置和电子装置 Download PDF

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CN1231507A
CN1231507A CN99104818A CN99104818A CN1231507A CN 1231507 A CN1231507 A CN 1231507A CN 99104818 A CN99104818 A CN 99104818A CN 99104818 A CN99104818 A CN 99104818A CN 1231507 A CN1231507 A CN 1231507A
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内山宪治
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BOE Technology HK Ltd
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Abstract

在利用各向异性导电膜将具备多个凸点的IC芯片粘接到基板等上时,防止各向异性导电膜中包含的导电粒子从IC芯片的凸点面逸出,使更多的数目的导电粒子存在于凸点面上。一种IC芯片1具备在内置半导体的同时向外部露出的多个凸点2,利用各向异性导电膜将具备这些凸点2的面粘接到基板等上。将多个凸点2的至少一个的外侧部分的高度H设定得比内侧部分的高度h高,以便在凸点2的部位处俘获更多的导电粒子。

Description

集成电路芯片、集成电路结构体、液晶装置和电子装置
本发明涉及利用多个凸点形成输入输出端子的结构的IC芯片(集成电路芯片)。此外，本发明涉及包含该IC芯片而构成的IC结构体。此外，本发明涉及包含该IC芯片而构成的液晶装置。此外，本发明涉及包含该IC芯片而构成的电子装置。
现在，作为携带电话机、摄像机等各种电子装置的可视图象显示部，广泛地使用液晶装置。此外，在这样的电子装置或液晶装置中装备了各种半导体装置。这种所谓半导体装置，指的是IC芯片本身或IC芯片与基板成为一体的IC结构体等。
作为上述IC芯片，已知有未被封装的裸芯片IC和进行了封装并在背面上具有端子的IC等。此外，作为上述的那种IC结构体，已知有在1个基板上安装了1个或多个IC芯片的结构的COB(基板上的芯片)和MCM(多芯片模块)及在FPC(柔性印刷电路基板)上安装了IC芯片的结构COF(在柔性印刷电路基板上的芯片)等。
作为将上述IC芯片导电性地连接到布线基板等的粘接对象部件上的方法，有在IC芯片的输入输出端子上形成了凸点后利用该凸点进行导电性连接的方法。在该方法中，在IC芯片与粘接对象部件之间介入ACF(各向异性导电膜)等的各向异性导电粘接剂的状态下利用该各向异性导电粘接剂将IC芯片与粘接对象部件互相接合在一起。而且，此时IC芯片的凸点，利用各向异性导电粘接剂中包含的导电粒子的作用，与粘接对象部件上的电极端子导通。
但是，在现有的IC芯片中，例如，如图10中所示，在IC芯片51的有源面51a上作为输入输出端子形成的多个凸点52的表面上，被附着各向异性导电粘接剂的面52a作为与IC芯片51的表面51a大致平行的平坦面来形成。
一般来说，在用各向异性导电粘接剂将IC芯片51接合到粘接对象部件上时，在其间夹住各向异性导电粘接剂的状态下将IC芯片51按压到粘接对象部件上。以这种方式被按压的各向异性导电粘接剂以向横方向扩展的方式移动。此时，如果凸点52的面52a如上述那样相对于IC芯片51的表面51a是平行的平坦面，则被凸点面52a按压的各向异性导电粘接剂以从凸点52逸出的方式扩展，其结果，存在下述担心：在凸点面52a处存在的导电粒子的数目变少、导电变得不充分。
本发明是鉴于上述问题而完成的，其目的在于：在用各向异性导电粘接剂将具备多个凸点的IC芯片粘接到粘接对象部件上时，防止各向异性导电粘接剂中包含的导电粒子从IC芯片的凸点面逸出，使更多的数目的导电粒子存在于凸点面上。
(1)为了达到上述目的，与本发明有关的IC芯片是这样的IC芯片，它具备在内置半导体的同时向外部露出的多个凸点，利用各向异性导电粘接剂将具备这些凸点的面压接到粘接对象部件上，其特征在于：上述凸点的与上述粘接对象部件相对的安装面的表面的在该IC芯片的外侧方向上的高度比在内侧方向上的高度高。
按照该IC芯片，由于凸点的外侧部分的高度比内侧部分的高度高，故在利用该IC芯片按压各向异性导电粘接剂时，能利用高度高的外侧部分来阻止该各向异性导电粘接剂中包含的导电粒子向IC芯片的外侧移动。其结果，在凸点的部位处能保留较多的导电粒子，于是，能确保可靠的导通。
再有，所谓「各向异性导电粘接剂」，指的是在其内部包含导电粒子的导电粘接剂，关于具体的材料，不作特别限定。例如，可以考虑将整体形成为膜状的ACF(各向异性导电膜)、或将整体形成为膏状的各向异性导电粘接剂等。
此外，所谓「粘接对象部件」，指的是被粘接IC芯片的任意的部件，例如，可考虑硬质的布线基板、软质的布线基板、柔性的布线基板、液晶屏的透明基板等各种部件。
(2)在上述的IC芯片中，在将凸点的外侧部分的高度设为H、将该凸点的内侧部分的高度设为h时，希望高度的差(H-h)比各向异性导电粘接剂中包含的的导电粒子的直径小。如果是这样的话，则在凸点的部位处能确保更多的导电粒子。
(3)在上述的各IC芯片中，可这样来形成凸点：使其在与上述粘接对象部件相对的安装面上具有凹部。如果这样做，则由于能在该凹部中存储导电粒子，故能由凸点的部位来确保更多的导电粒子。
(4)其次，与本发明有关的IC结构体是具有IC芯片和使用各向异性导电粘接剂粘接该IC芯片的基板的IC结构体，其特征在于：上述IC芯片由上述(1)～(3)中记载的IC芯片来构成。按照该IC结构体，与IC芯片相关联，与上述(1)～(3)中记载的说明相同，能在凸点部位处保留数目多的导电粒子，于是，能确保可靠的导通。
(5)其次，与本发明有关的液晶装置是具有包含由一对基板来夹住液晶的结构的液晶屏和使用各向异性导电粘接剂直接地或间接地被连接到该液晶屏上的液晶驱动用IC的液晶装置，其特征在于：该液晶驱动用IC由上述(1)～(3)中记载的IC芯片来构成。利用该液晶装置，与IC芯片相关联，也与上述(1)～(3)中记载的说明相同，能在凸点部位处保留数目多的导电粒子，于是，能确保可靠的导通。
再有，所谓间接地将液晶驱动用IC连接到液晶屏上，指的是例如将液晶驱动用IC粘接到液晶屏以外的中间基板上之后，通过将该中间基板粘接到液晶屏上，最终地将液晶驱动用IC连接到该液晶屏上。
(6)其次，与本发明有关的电子装置是包含IC芯片而构成的电子装置，其特征在于：该IC芯片由上述(1)～(3)中记载的IC芯片来构成。利用该电子装置，与IC芯片相关联，也与上述(1)～(3)中记载的说明相同，能在凸点部位处保留数目多的导电粒子，于是，能确保可靠的导通。
图1是示出与本发明有关的IC芯片的一实施例的斜视图。
图2是图1的IC芯片的剖面图。
图3是示出与本发明有关的IC结构体的一实施例的斜视图。
图4是放大地示出图3的IC结构体的主要部分的剖面图。
图5是示出凸点的变形例的剖面图。
图6是示出凸点的另一变形例的剖面图。
图7是示出与本发明有关的液晶装置的一实施例的斜视图。
图8是分解地示出与本发明有关的电子装置的一实施例的斜视图。
图9是示出图8的电子装置中使用的电控制系统的一例的框图。
图10是示出现有的IC芯片的一例的正视图。
图1示出了与本发明有关的IC芯片的一实施例。在这里示出的IC芯片1内置了以起到预定的功能的方式而被构成的电路，例如，作为液晶装置用的液晶驱动用IC等来形成。在该IC芯片1的有源面1a上设有作为内置电路的输入端子或输出端子而起作用的多个凸点2。
例如，如图2中所示，IC芯片1在芯片本体1b的表面的适当部位处形成铝电极3，在其它部分上形成钝化膜4，以使该铝电极3成为开口，再通过在铝电极3上对凸点形状的金镀层进行图形刻蚀来形成凸点2。再有，在图1和图2中，为了以容易明白的方式示出凸点2等的结构，将相对于IC芯片1的凸点2的尺寸描绘得比实际的尺寸大。
再有，IC芯片的凸点配置不限于图1的配置，可以设置在IC芯片的2边上，也可以交错地配置。
图3示出了作为上述IC芯片1的利用方法的一例的COB(基板上的芯片)方式的IC结构体6。通过使用作为各向异性导电粘接剂的ACF(各向异性导电膜)8将IC芯片1粘接到在作为粘接对象部件的印刷基板7上的预定位置上设定的IC安装区A上来形成该IC结构体6。在图3中，在IC芯片1的周边根据需要配置片状电阻及片状电容器等的电路部件9。
现在，如果假定构成ACF8的粘接剂是热硬化型的树脂，则在将IC芯片1粘接到印刷基板7上时，通过在IC芯片1与印刷基板7之间夹住ACF8的状态下对ACF8进行加热和按压来完成粘接。如果完成粘接，则如图4中所示，利用ACF8中包含的导电粒子11的作用，IC芯片1的凸点2与印刷基板7的电极端子8a和8b导通。
在本实施例中，如图4中所示，凸点2的外侧部分的高度H比内侧部分的高度h高。因此，如果利用IC芯片1将ACF8按压到印刷基板7上，则将构成ACF8的较多的粘接剂的树脂压向IC芯片1的外侧，同时由凸点2的高度高的外侧部分的内壁部17阻止打算一起向IC芯片1的外侧移动的导电粒子11的移动，防止其流出。因此，在凸点2与电极8a和8b之间俘获ACF中包含的数目多的导电粒子11，可通过使其夹在中间来确保良好的导通。
再有，希望将凸点2的外侧部分与内侧部分之间的高度尺寸差(H-h)设定成比ACF8中包含的导电粒子11的直径小。这是因为，如果高度尺寸差(H-h)比导电粒子11的直径大，则由于在凸点2与电极8a和8b之间形成了比导电粒子11的直径大的间隔，故存在因凸点2引起的导电粒子11的俘获是不充分的担心。
图5示出了凸点2的变形实施例。关于在这里示出的凸点2，在附着ACF8并朝向凸点2的粘接对象部件的电极8a和8b的面上形成凹部5。利用该凹部5的作用，由凸点2的高度高的外侧部分的内壁部17来防止流出，同时利用凹部的凹陷15可在凸点2的部位处存储和确保数目多的导电粒子11，因此，可确保良好的导通。
图6示出了关于凸点2的另一变形实施例。关于在这里示出的凸点2，将附着ACF8并朝向凸点2的粘接对象部件的电极8a和8b的面形成向外侧呈凸状的弯曲形状。利用该凸部的锥形部18的作用，由于在凸点2的高度低的内侧部分处保留数目多的导电粒子11，故可确保良好的导通。
图7示出了作为利用了图1中示出的IC芯片1的结构体的另一例的液晶装置。在这里示出的液晶装置12具有互相对置的一对透光性基板13a和13b。在这些基板13a和13b的一个上将密封材料14印刷成长方形的框状，利用该密封材料3来粘接基板13a和13b。此外，在这些基板13a与13b之间形成的间隙、即所谓的单元间隙中封入液晶。此外，利用光刻处理在一个基板13a的内侧表面上形成多个直线状的透光性电极16a。而且，利用光刻处理在另一个基板13b的内侧表面上形成多个直线状的透光性电极16b。
利用以上所述，形成由一对基板13a和13b夹住液晶的结构的液晶屏。在该液晶屏中，一个基板13a向另一个基板13b的外侧伸出，在该伸出部中设有安装作为IC芯片的液晶驱动用IC21用的IC安装区A。
在基板13a上形成的透光性电极16a直接延伸到基板13a的伸出部上，而且其前端部在IC安装区A中成为接合区(land)。此外，在基板13b上形成的透光性电极16b通过在基板13b与基板13a之间配置的导通材料(图中未示出)与基板13a的伸出部的导电线连接。而且，这些导电线的前端在IC安装区A中成为接合区。在本实施例中，透光性基板13a的伸出部相当于粘接液晶驱动用IC21、即IC芯片用的粘接对象部件。
将液晶驱动用IC21安装到IC安装区A中之后，在透光性基板13a和13b的外侧表面上粘贴偏振片12，再根据需要在透光性基板13a和13b的某一个的外侧附加地设置背照光源。液晶驱动用IC21是具有对透光性电极16a和16b送出扫描信号和数据信号的功能的半导体装置，在其有源面21a(图的下侧面)上设有多个凸点2，这些凸点2用于在与外部电路之间进行信号的授受，或从外部电源接受电压的供给。这些凸点2也如图4中所示，外侧部分的高度H比内侧部分的高度h高。因此，在由液晶驱动用IC21对ACF8进行加热和加压时，可防止该ACF8中包含的导电粒子向凸点2的外侧逸出，因此，在凸点2与IC安装区A内的接合区之间可俘获数目多的导电粒子。
图8示出了作为包含与本发明有关的IC芯片而构成的电子装置的一实施例的携带电话机的一例。在这里示出的携带电话机包含上机壳26和下机壳27而构成。在上机壳26中设有接收发射用的天线28、键盘单元29和话筒32。而且，在下机壳27中设有例如图7中示出的液晶装置12、扬声器33和电路基板34。
如图9中所示，在电路基板34上设有与扬声器33的输入端子连接的接收部38、与话筒32的输出端子连接的发射部37、包含CPU而构成的控制部36和向各部分供给电力的电源部39。控制部36读取发射部37和接收部38的状态，根据该结果对液晶驱动用IC21供给信息，在液晶装置12的有效显示区上显示可视信息。此外，控制部36根据从键盘单元29输出的信息，将信息供给液晶驱动用IC21，在液晶装置12的有效显示区上显示可视信息。
以上，举出优选实施例说明了本发明，但本发明不限定于这些实施例，而是可在权利要求书中记载的发明的范围内作各种改变。
例如，与本发明有关的IC芯片不限于图1中示出的形状，而是可构成为其它任意的形状。此外，与本发明有关的IC结构体不限于图3中示出的COB类型的半导体装置，可以是COF(在柔性印刷电路基板上的芯片)类型的，再者，不限于图7中示出的液晶装置，可作成使用各向异性导电粘接剂来粘接具备凸点的IC芯片的形式的其它任意的结构体。此外，与本发明有关的液晶装置不限于将液晶驱动用IC直接安装到液晶屏基板上的形式的图7中示出那样的COG方式的液晶装置，可作成其它各种液晶装置。此外，在图8中作为电子装置的一例举出了携带电话机，但当然可将本发明应用于摄像机等其它各种电子装置。
按照与本发明有关的IC芯片、IC结构体、液晶装置和电子装置，由于将凸点的外侧部分的高度形成得比内侧部分的高度高，故在利用该IC芯片按压各向异性导电粘接剂时，可利用高度高的凸点外侧部分来阻止该各向异性导电粘接剂中包含的导电粒子向IC芯片的外侧移动。其结果，能在凸点部位处保留数目多的导电粒子，于是，能确保可靠的导通。

Claims (6)

1．一种IC芯片，该IC芯片具备在内置半导体的同时向外部露出的多个凸点，并利用各向异性导电粘接剂将具备这些凸点的面压接到粘接对象部件上，其特征在于：
上述凸点的与上述粘接对象部件相对的安装面的表面的在该IC芯片的外侧方向上的高度比在内侧方向上的高度高。
2．如权利要求1中所述的IC芯片，其特征在于：
在将上述凸点的外侧部分的高度设为H、将该凸点的内侧部分的高度设为h时，高度差的尺寸(H-h)比上述各向异性导电粘接剂中包含的的导电粒子的直径小。
3．如权利要求1或权利要求2中所述的IC芯片，其特征在于：
上述凸点在与上述粘接对象部件相对的安装面上具有凹部。
4．一种IC结构体，该IC结构体具有IC芯片和使用各向异性导电粘接剂粘接该IC芯片的基板，其特征在于：
上述IC芯片由权利要求1至权利要求3中的至少任一项中所述的IC芯片来构成。
5．一种液晶装置，该液晶装置具有包含由一对基板来夹住液晶的结构的液晶屏和使用各向异性导电粘接剂直接地或间接地被连接到该液晶屏上的液晶驱动用IC，其特征在于：
该液晶驱动用IC由权利要求1至权利要求3中的至少任一项中所述的IC芯片来构成。
6．一种电子装置，该电子装置包含IC芯片而构成，其特征在于：
该IC芯片由权利要求1至权利要求3中的至少任一项中所述的IC芯片来构成。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100451741C (zh) * 2007-10-16 2009-01-14 华映视讯（吴江）有限公司 Ic芯片安装方法、ic芯片安装架构以及液晶显示器
CN101635290B (zh) * 2008-07-22 2012-05-30 瀚宇彩晶股份有限公司 金属凸块结构及其应用于封装结构

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3478225B2 (ja) 2000-02-15 2003-12-15 ソニーケミカル株式会社 接続材料及びそれを使用する実装方法
JP2002139739A (ja) * 2000-11-01 2002-05-17 Rohm Co Ltd 液晶表示装置とこれに使用する半導体チップの製造方法
DE10059765A1 (de) * 2000-11-30 2002-06-06 Koninkl Philips Electronics Nv Baugruppe mit Verbindungsstruktur
JP3767474B2 (ja) * 2001-01-15 2006-04-19 セイコーエプソン株式会社 表示装置及びその製造方法
KR100869113B1 (ko) * 2002-08-23 2008-11-17 삼성전자주식회사 액정 표시 장치
JP4990711B2 (ja) * 2007-07-27 2012-08-01 ソニーケミカル＆インフォメーションデバイス株式会社 Ｉｃチップの製造方法及びｉｃチップの実装方法
JP4814277B2 (ja) * 2008-04-18 2011-11-16 ソニーケミカル＆インフォメーションデバイス株式会社 接合体、該接合体の製造方法、及び該接合体に用いられる異方性導電膜
JP6945276B2 (ja) * 2016-03-31 2021-10-06 デクセリアルズ株式会社 異方性導電接続構造体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3480412A (en) * 1968-09-03 1969-11-25 Fairchild Camera Instr Co Method of fabrication of solder reflow interconnections for face down bonding of semiconductor devices
JPH06302649A (ja) * 1993-04-13 1994-10-28 Citizen Watch Co Ltd 半導体装置の接続方法
JP3152796B2 (ja) * 1993-05-28 2001-04-03 株式会社東芝 半導体装置およびその製造方法
KR0149721B1 (ko) * 1994-06-29 1998-10-15 김정덕 이방성 도전 접착제를 사용한 집적회로 실장 방법
JP3225800B2 (ja) * 1995-08-09 2001-11-05 三菱電機株式会社 半導体装置
JP3340005B2 (ja) * 1995-11-27 2002-10-28 株式会社日立製作所 液晶表示装置
US5889326A (en) * 1996-02-27 1999-03-30 Nec Corporation Structure for bonding semiconductor device to substrate
JP3409957B2 (ja) * 1996-03-06 2003-05-26 松下電器産業株式会社 半導体ユニット及びその形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100451741C (zh) * 2007-10-16 2009-01-14 华映视讯（吴江）有限公司 Ic芯片安装方法、ic芯片安装架构以及液晶显示器
CN101635290B (zh) * 2008-07-22 2012-05-30 瀚宇彩晶股份有限公司 金属凸块结构及其应用于封装结构

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