CN1199166C - 光记录媒体、光信息处理装置与光记录/再现方法 - Google Patents
光记录媒体、光信息处理装置与光记录/再现方法 Download PDFInfo
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Abstract
所设的多个记录层中的第一记录层和第二记录层具有这样的结构:设有记录膜和由氧化银构成的反射控制膜,且反射控制膜夹于介质膜之间。反射控制膜利用光照射时记录膜上产生的热量,因该热量在高反射部形成限界温度以上的部分上形成高反射部。从而,减少在被读写记录层以外的光损耗,并提高光效率。
Description
技术领域
本发明涉及一种光盘或光卡片等以光学方式记录/再现信息的光记录媒体和对光记录媒体进行信息的记录/再现的光信息处理装置与光记录、再现方法。
背景技术
近几年,随着社会的信息化发展,人们希望有大容量的外部存储装置。光学信息的记录中,由于存在光波长和物镜的数值孔径所决定的衍射极限,传统的用缩小记录位的尺寸来实现高密度化的方法存在着限界。为了解决这样的问题,提出设有多个记录层的多层光记录媒体。用于多层型光记录媒体的记录层中,采用能使光反射并能使光透射的半透明膜。因此,会因为目标记录层以外的记录层上的光反射而产生光损耗。并且,以入射的光行进方向的上游侧为上、下游侧为下的场合,由于比目标记录层更下面的层上也到达透射光,再次发生光损耗。为了解决这样的问题,提出了在记录层上采用具有非线性光学特性的非线性物质的多层光记录媒体(日本专利公开特许公报特开2000-3529号)。
图10表示传统的多层光记录媒体的剖面结构。图10所示的光记录媒体包括位于第一光透射膜10和第二光透射膜14之间的第一记录层12和在相对于第一记录层12的位置上形成的、将第二光透射膜14夹于中间的第二记录层16。另外,第一记录层12上设有导引沟12A。第一记录层12由其反射率随着光强度增大而非线性增大的非线性反射物质形成。具有这种性质的非线性反射物质有a-Si、InSb、ZnTe、ZnSe、CdSSe、GaAs、GaSb等。由这样的非线性反射物质形成第一记录层12的场合,第一记录层12具有根据|(n-ns)/(n+ns)|2变化的反射率R1。这里,ns为第一光透射膜10与第二光透射膜14的折射率,n为非线性反射物质的第一记录层12的折射率。这里使用的非线性反射物质,指其折射率随光强度而改变的材料,即所谓的非线性光学效应大的材料。
以下,说明这种光记录媒体的光学特性。当第一记录层12被读写的场合,为了在第一记录层12上形成光点,照射在第一记录层12的光束较强。此时的第一记录层12的反射率R1例如为40%。另一方面,当第二记录层16被读写时,为了把照射的光点形成于第二记录层16上,照射在第一记录层12的光强较弱。此时,第一记录层12的反射率R1例如设为30%,则第一记录层12将反射30%的入射光,使其70%的光透射到第二记录层16侧。因此,有效率地进行第二记录层16的读写。
但是,公开的技术中,其反射率变化从30%到40%,仅变化10%。这是由于第一记录层12或第二记录层16上使用的有非线性光学效应材料导致的限制,更多层化则会有光量不足的问题。
发明内容
因此,为了解决上述的课题,本发明的一种有多个记录层的多层光记录媒体,其特征在于:所述多个记录层中至少一个记录层,从光入射侧起依次设置记录膜与可变反射膜;所述记录膜由经光照射发热的材料形成;所述可变反射膜,由当可变反射膜的温度未到预定温度时对光具有透射性、当膜可变反射膜的温度为所述预定温度以上时对光具有反射性的金属氧化物构成,在光照射时由所述记录膜产生的热量加热使可变反射膜的温度升到所述预定温度以上的区域上,形成高反射部。
而且,本发明的光记录媒体中,最好所述记录膜是由随着光照射发热的材料构成,所述可变反射膜中,在光照射时由所述记录膜产生的热量加热使可变反射膜的温度升到所述预定温度以上的区域形成高反射部分。
依据这种光记录媒体,在成为读写对象的记录层上形成光点时,由于照射在记录层上设置的记录膜的光强度变强,结果,在记录膜中引起局部发热而导致温度上升。根据该热量被读写的记录层的可变反射膜上形成高反射部,将大部分的入射光在该反射部上反射。因此,可减少光损耗量,且可检出光效率良好的信号。并且,记录信息的场合,也因为增加来自高反射部的反射光,所以由少量记录光量就能解决,能够达到光效率良好的记录。并且,由于该光记录媒体利用可变反射膜的透射到反射的状态变化,比传统的利用非线性光学效应的光记录媒体有更好的光效率,可实现设置更多记录层的多层光记录媒体。
并且,本发明的光记录媒体中,所述记录层在所述可变反射膜的光照射侧的相反侧还设有因光照射而发热的发热膜;所述可变反射膜也可以具有这样的结构:光照射时由所述记录膜产生的热量加热而使膜温度升到所述预定温度以上的区域来形成高反射部。
依据这种光记录媒体,可以得到光效率良好的所谓的记录、再现效果之外还可以得到可抑制高反射部的尺寸变化的效果。
并且,本发明一种有多个记录层的多层光记录媒体,其特征在于:所述多个记录层中至少一个记录层,从光入射侧起依次设置记录膜、可变反射膜与波长选择发热膜;所述波长选择发热膜因预定波长范围的光照射而发热;所述可变反射膜,由当可变反射膜的温度未到预定温度时对光具透射性、当可变反射膜的温度为所述预定温度以上时对光具有反射性的金属氧化物构成,在光照射时由所述波长选择发热膜产生的热量加热使可变反射膜的温度升到所述预定温度以上的区域上,形成高反射部。
依据这种光记录媒体,可以实现光效率更好的记录与再现。
并且,本发明的光记录媒体中,所述可变反射膜最好是根据因热而产生的化学变化把对光有透射性的状态变化到有反射性的状态,再有,所述可变反射膜由金属氧化物形成,且至少含有银氧化物、锡氧化物、铟氧化物及锌氧化物中的任一种氧化物。
并且,为了防止所述记录膜和所述可变反射膜的化合物生成,而且,禁锢可变反射膜的化学变化产生的物质,本发明的光记录媒体中,最好将所述可变反射膜由介质层夹于中间。
并且,本发明的光记录媒体中,所述多个记录层中离光照射侧最远的位置上的记录层中,最好从光入射侧面依次设有记录膜和把入射光全反射的全反射膜。
本发明的光信息处理装置是在本发明的光记录媒体上记录、再现信息的光信息处理装置,其特征在于:包括第一辐射光源,第二辐射光源,把来自第一与第二辐射光源的出射光会聚到所述光记录媒体上成为微小光点的聚光光学系统,接受来自所述光记录媒体的反射光而输出光电流的光检出器,以及只将所述光记录媒体上反射的来自第一辐射光源的出射光即第一出射光向所述光检出器导引的光学系统;来自所述第二辐射光源的出射光即第二出射光在所述光记录媒体上的所述第一出射光会聚的位置上会聚为比所述第一出射光更大尺寸的光点。
依据这种光信息处理装置,可对本发明的光记录媒体更加高效率地进行信息的记录与再现。
本发明的光记录与再现方法是对本发明的光记录媒体进行记录与再现信息的方法,其特征在于:根据光照射发生的热量把可变反射膜的一部分从对光有透射性的状态变化到有反射性的状态形成高反射部,并在记录膜上记录、再现信息。而且,所述可变反射膜中,通过使因光照射发热从光透射性状态变化到光反射性状态的区域小于照射的光点尺寸,实现超分辨率的记录与再现。
附图说明
图1是表示本发明的实施例1的光记录媒体的第一记录层读写时情形的剖面图。
图2是表示本发明的实施例1的光记录媒体的第二记录层读写时情形的剖面图。
图3是表示本发明的实施例1的光记录媒体的最终记录层读写时情形的剖面图。
图4是表示本发明的实施例1的光记录媒体的记录层读写时情形的剖面图。
图5是表示对光束照射区域的记录层的温度分布的曲线图。
图6是表示本发明实施例2的光记录媒体的记录层读写时情形的剖面图。
图7是表示本发明实施例3的光记录媒体的记录层读写时情形的剖面图。
图8是本发明实施例4的光信息处理装置的结构示意图。
图9是表示用本发明实施例4的光信息处理装置在记录层上读写时的光记录媒体的情形的剖面图。
图10是传统的多层记录媒体的剖面图。
具体实施方式
下面对本发明的实施方式进行更详细的说明。
[实施例1]
图1示出实施例1的光记录媒体的剖面结构。该光记录媒体是在衬底701上从光(L0)入射侧依次设置第一记录层751、第二记录层752与最终记录层754的多层光记录媒体。各记录层间设有分离膜731、732。
第一记录层751和第二记录层752是相同结构的层,具有从光(L0)入射侧依次设置记录膜721、722、介质膜711、713、反射控制膜(相当于可变反射膜)735、736及介质膜712、714的结构。
再配置由记录膜723、介质膜715、反射膜702构成的最终记录层754,将第二记录层752和分离膜732夹在中间。在这种结构中,第一记录层751与第二记录层752的记录膜721、722是由对于记录与再现的波长光以半透明膜吸收入射光的一部分而发热的GeSbTe等记录材料构成。
并且,反射控制膜735与反射控制膜736由银氧化物(AgOx)构成,在分解温度以上时分解为银和氧,由透射变化为反射的状态。
介质膜711、712、713、714是熔点(或是软化点)比银氧化物的分解温度高的透明介质,它起着将因银氧化物分解生成的银与氧禁锢的作用。介质膜711、712、713、714可以由ZnS和SiO2的混合物等形成。
再有,介质膜711、713起着防止记录膜721、722和反射控制膜735、736的化合物生成的作用。并且,分离膜731、732是为了在光与热上隔离各记录层,由比记录、再现光(L0)的焦点深度更厚的透明材料(例如聚甲基丙烯酸甲酯)形成。另外,各记录层上设置导引沟,用以特别指定记录位置。
下面,说明本实施例的光记录媒体的光学特性。当第一记录层751被读写的场合,由于入射光L0的光点形成于第一记录层751上,其第一记录层751上照射的光束较强。结果,在记录膜721的局部上产生发热,其温度上升。该热量通过介质膜711传到反射控制膜735上,因此反射控制膜735的温度也上升。从而反射控制膜735的温度达到氧化银的分解温度使其分解为银和氧,并形成高反射部741。入射光L0的大部分由该高反射部741反射。然后,通过检出该反射光检出再现信号。
另一方面,第二记录层752被读写时的光记录媒体的情形在图2中示出。当第二记录层752被读写时,因为使照射的光点形成于第二记录层752上,记录膜721中因吸收入射光而导致的发热区域分散其温度上升较小。因此,反射控制膜735维持氧化银的状态使入射光透射。记录膜722中形成和第一记录层751读写时同样的光点,其记录膜722上产生局部发热,在反射控制膜736上形成高反射部742。入射光L0大部分在该高反射部742反射,反射光透射第一记录层751。然后,通过检测该反射光而检出再现信号。
并且,当最终记录层754被读写时的光记录媒体的情形在图3中示出。当最终记录层754被读写时,因为使照射的光点形成于最终记录层754上,其记录膜721与记录膜722中因入射光的吸收而形成的发热区域分散使温度上升较小。因此,反射控制膜735与反射控制膜736维持氧化银的状态而使入射光透射。该光在反射膜702中反射,该反射光透射第二记录层752与第一记录层751。然后,通过检测该反射光检出再现信号。
如此,仅在被读写时在相应的记录层上形成高反射部741、742,因此,能够检测光效率良好的信号。本发明中,由于利用反射控制膜735、736的由透射到反射的状态变化,比传统的利用非线性光学效应的光记录媒体有更好的光效率,且可实现有更多的记录层的多层光记录媒体。并且,记录信息的场合,由于从高反射部741、742的反射光增加,以较少的记录光量就能完成记录,能够实现光效率良好的记录。另外,这里是对设有三层记录层情况进行说明,但并不限于此,本结构也可应用在设有二层与四层以上的记录层的光记录媒体上。并且,所说明的反射控制膜735、736采用银氧化物的结构,但并不限于此,只要是具有由于受热而发生的化学变化而能由透射变为反射状态的材料即可。例如,锡氧化物、铟氧化物或锌氧化物等均可,并且也可以为这些材料的混合物。
并且,依据本实施例的光记录媒体,能够实现衍射极限以下的印痕的再现,即所谓的超分辨率的记录及再现。下面,对本实施例的光记录媒体的超分辨率的记录及再现的动作进行说明。
图4是说明用本实施例的光记录媒体进行超分辨率的记录、再现的方法的剖面图。再有,图4中示出第一记录层751上读写时的情形。本实施例的光记录媒体的再现过程中,能够实现比照射高反射部741的光点更小的尺寸。参照图5所示的表示照射光点和高反射部741的形成区域的关系的示图,以下,对高反射部741的形成区域进行说明。
在记录与再现本实施例的光记录媒体的场合,反射控制膜735的温度分布形成以照射区域的中心部分为最高的单峰形状。高反射部741在反射控制膜735的温度为一定值以上(高反射部形成极限温度以上)的部分上形成。因此,可以选择照射光L0的强度,使得成为高反射部形成极限温度以上的区域的尺寸更小于照射光点的尺寸,通过照射可形成图4所示的照射光点以下尺寸的高反射部741。这种状态下,只反射照射在高反射部741部分的光,因此,不受照射光点外围部分所记录的信息的影响,从而可实现高分辨率的信号检测。
[实施例2]
实施例2的光记录媒体是把实施例1的光记录媒体的最终记录层754以外的记录层751、752以图6所示的结构置换而成的结构。另外,图6中示出在第一记录层751上读写的情形。
图6中711与712表示介质膜,735表示反射控制膜,这和实施例1的情况相同。记录膜721是对光L0大致透明,根据折射率的不同记录信息的记录膜。并且,吸收发热膜746由对光L0半透明的材料构成。例如,光L0为波长为650mm左右的激光的场合,吸收发热膜746可以采用非晶硅薄膜。吸收发热膜746吸收光L0而产生热量。所产生的热量通过介质膜712加热反射控制膜735,并形成高反射部741。会聚光因记录膜721的折射率分布产生的衍射而被调制,接着在高反射部741被反射。然后,通过检测该反射光而检出再现信号。
本实施例的光记录媒体并不是实施例1的场合的由记录膜721产生热量,是通过另外设置的吸收发热膜746来产生热量。如此,即使记录膜721不是由光照射产生热量的材料形成的场合,也可以由吸收发热膜746的设置而实现和实施例1同样地提高光效率的效果。
再有,这种结构具有抑制因光L0的强度变化而造成高反射部741尺寸变化的效果。下面对其工作原理进行说明。当增加光L0的光量的场合,会增加吸收发热膜746中的发热量,并增大高反射部741的尺寸。但是,增加高反射部741,其向吸收发热膜746的入射光量会减少,从而吸收发热膜746中的发热量也减少。从而,高反射部741的尺寸也变小。结果,高反射部741的尺寸变化可得到抑制。
反之,当减少光L0的光量的场合,会减少吸收发热膜746中的发热量,并减小高反射部741的尺寸。如果高反射部741变小,其向吸收发热膜746的入射光量会增加,从而也增加吸收发热膜746中的发热量。从而,高反射部741的尺寸会增大。结果,高反射部741的尺寸变化可得到抑制。
如此,这种光记录媒体中,并不依赖光L0的强度,可稳定形成比光点尺寸更小的吸收发热膜746,且可实现稳定的超分辨率的再现的效果。
[实施例3]
实施例3的光记录媒体是把实施例1的光记录媒体的最终记录层754以外的记录层751、752以图7所示的结构代替而成的结构。另外,图7中示出第一记录层751上读写时的情形。
在图7中,711与712表示介质膜,735表示反射控制膜,和实施例1的情况相同。记录膜721是对波长λ1的光L1和波长λ2的光L2大致透明的、利用因热改变折射率来记录信息的记录膜。并且,波长选择膜743由对光L2半透明、对光L1透明的材料构成。例如,光L1的波长λ1为430nm左右,且光L2的波长λ2为650nm左右的场合,波长选择吸收膜743可由含CoO、FeO、CuO的SiO2形成。
下面说明其工作原理。对本实施例的光记录媒体进行信息的记录与再现时,同时照射光L1与光L2。光L2被波长选择吸收膜743吸收,并产生热量。该产生的热量通过介质膜712加热反射控制膜735,并形成高反射部741。再有,热量传到记录膜721,使记录膜721的温度上升。通过将记录膜721的温度上升到记录温度以产生记录膜721的折射率变化来进行记录。并且,再现过程中,信号是用同时照射的光L1被检测。由于光L1对除高反射部741以外的所有膜是透明,可在作为目标记录层上效率良好的会聚光。该会聚的光透射记录膜721时,根据记录的折射率分布而使散射量变化,结果使反射光量得到调制。然后,通过检测该反射光检出再现信号。依据上述结构,能够更高效率的检测信号。
[实施例4]
以下,就在反射控制膜735、736上形成光反射部741时采用两个辐射光源的光信息处理装置(作为在本发明的光记录媒体上记录或者再现信息的装置)的一种实施方式进行说明。
图8中示出本实施例的光信息处理装置的结构。从第一半导体激光器100射出的波长λ1的光L1透过偏振光分束器107与波长选择棱镜108,经准直透镜102变换为平行光,再由1/4波片115变换为圆偏振光。此光再经物镜103会聚在与实施例1的光记录媒体同样结构的光盘105的记录层上(前行光路)。来自光盘105的反射光经物镜103变换为平行光,再经1/4波片115变换为和前行光路相差90度的线偏振光。该光束透过波长选择棱镜108,在偏振光分束器107中反射,再入射到全息照相元件170上。为了取出伺服信号,该光束的波阵面通过全息照相元件170变形,由光检出器190检出。再有,本发明的光信息处理装置设有辐射波长为λ2的光L2的第二半导体激光器101。从半导体激光器101射出的光L2由波长选择棱镜108反射,再经准直透镜102与物镜103会聚在和光L1相同的位置上。
图9是表示采用本发明的光信息处理装置时的光盘105的记录层(此处为第一记录层751)中的光L1与光L2的会聚状态的示图。本发明的光信息处理装置具有使光L2的会聚光点的尺寸大于光L1的会聚光点的尺寸的结构。这样的结构可以通过使光L2的波长λ2大于光L1的波长λ1,或者通过错开光L2在光轴方向上的会聚位置等加以实现。高反射部741由光L2形成,且高反射部741在比光L1的会聚光点更宽的范围形成。因此,检测信号时可有效地将光L1反射。
如此,用本结构的光信息处理装置再现实施例1~3中所示的本发明的光记录媒体,能够更加高效率地检测信号。
[工业上的利用可能性]
依据本发明的光记录媒体、光信息处理装置与光记录、再现方法,可以提高记录与再现时的光效率,能够实现对多层光记录媒体的高效率的记录与再现。
Claims (9)
1.一种有多个记录层的多层光记录媒体,其特征在于:所述多个记录层中至少一个记录层,从光入射侧起依次设置记录膜与可变反射膜;
所述记录膜由经光照射发热的材料形成;
所述可变反射膜,由当可变反射膜的温度未到预定温度时对光具有透射性、当可变反射膜的温度为所述预定温度以上时对光具有反射性的金属氧化物构成,在光照射时由所述记录膜产生的热量加热使可变反射膜的温度升到所述预定温度以上的区域上,形成高反射部。
2.一种有多个记录层的多层光记录媒体,其特征在于:所述多个记录层中至少一个记录层,从光入射侧起依次设置记录膜、可变反射膜与发热膜;
所述发热膜因光照射而发热;
所述可变反射膜,由当可变反射膜的温度未到预定温度时对光具有透射性、当可变反射膜的温度为所述预定温度以上时对光具有反射性的金属氧化物构成,在光照射时由所述发热膜产生的热量加热使可变反射膜的温度升到所述预定温度以上的区域上,形成高反射部。
3.一种有多个记录层的多层光记录媒体,其特征在于:所述多个记录层中至少一个记录层,从光入射侧起依次设置记录膜、可变反射膜与波长选择发热膜;
所述波长选择发热膜因预定波长范围的光照射而发热;
所述可变反射膜,由当可变反射膜的温度未到预定温度时对光具透射性、当可变反射膜的温度为所述预定温度以上时对光具有反射性的金属氧化物构成,在光照射时由所述波长选择发热膜产生的热量加热使可变反射膜的温度升到所述预定温度以上的区域上,形成高反射部。
4.如权利要求1~3中任一项所述的光记录媒体,其特征在于:所述可变反射膜通过因热而发生的化学变化从对光具有透射性的状态变化到具有反射性的状态。
5.如权利要求4所述的光记录媒体,其特征在于:所述可变反射膜至少含有银氧化物、锡氧化物、铟氧化物与锌氧化物中的任一种氧化物。
6.如权利要求1~3中任一项所述的光记录媒体,其特征在于:所述可变反射膜夹于介质层之间地配置。
7.如权利要求1~3中任一项所述的光记录媒体,其特征在于:所述多个记录层中离光照射侧最远的位置上配置的记录层从光入射侧起依次设有记录膜和把入射光全反射的全反射膜。
8.一种在权利要求1~3中任一项所述的光记录媒体上记录、再现信息的方法,其特征在于:
通过光照射产生的热量,使可变反射膜的一部分从对光具透射性的状态变化到对光具反射性的状态来形成高反射部,以在记录膜上记录、再现信息。
9.如权利要求8所述的记录、再现信息的方法,其特征在于:所述可变反射膜中,通过因光照射产生的热量从对光具透射性的状态而变为对光具反射性的状态的区域,小于照射的光点尺寸。
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JP2000310393 | 2000-10-11 | ||
JP310393/2000 | 2000-10-11 |
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CN1199166C true CN1199166C (zh) | 2005-04-27 |
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US (1) | US6987721B2 (zh) |
EP (1) | EP1327977B1 (zh) |
JP (1) | JP4084660B2 (zh) |
CN (1) | CN1199166C (zh) |
AU (1) | AU2001292370A1 (zh) |
DE (1) | DE60137520D1 (zh) |
WO (1) | WO2002031825A1 (zh) |
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JP2002342980A (ja) * | 2001-05-14 | 2002-11-29 | Sharp Corp | 光情報記録媒体 |
CN100392738C (zh) * | 2002-04-08 | 2008-06-04 | 松下电器产业株式会社 | 信息记录媒体、其制造方法以及光信息记录再现装置 |
WO2003094161A1 (fr) * | 2002-04-30 | 2003-11-13 | Sony Corporation | Dispositif de fabrication d'un support optique d'enregistrement, et procede associe, support optique d'enregistrement, dispositif de reproduction et procede associe |
DE60336316D1 (de) * | 2002-05-31 | 2011-04-21 | Panasonic Corp | Optisches aufzeichnungsmedium, optischer informationsprozessor und optisches aufzeichnungs-/wiedergabeverfahren |
JPWO2004077424A1 (ja) * | 2003-02-25 | 2006-06-08 | 松下電器産業株式会社 | 光情報記録担体 |
JP2004348830A (ja) * | 2003-05-21 | 2004-12-09 | Samsung Electronics Co Ltd | 微細構造描画用多層構造体と描画方法、及びそれを利用した光ディスクの原盤作製方法及びマスタリング方法 |
JP2007521594A (ja) * | 2003-06-26 | 2007-08-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | ブラッグ反射体を有する光情報担体 |
JP4279753B2 (ja) * | 2004-01-08 | 2009-06-17 | 株式会社日立製作所 | 光情報記録媒体とその製造方法および光情報記録再生装置 |
KR100579460B1 (ko) * | 2004-05-19 | 2006-05-12 | 엘지전자 주식회사 | 멀티 레이어 초해상 광디스크 |
JP4271116B2 (ja) | 2004-09-29 | 2009-06-03 | 株式会社東芝 | 光記録再生装置 |
JP4327691B2 (ja) | 2004-09-30 | 2009-09-09 | 株式会社東芝 | 光記録媒体 |
JP4357454B2 (ja) | 2005-06-08 | 2009-11-04 | 株式会社東芝 | 光記録媒体および光ディスク |
US20080056088A2 (en) * | 2005-10-20 | 2008-03-06 | Lanyo Technology Co., Ltd. | Multiple Recording Structures for Optical Recording |
JP4542995B2 (ja) | 2006-02-02 | 2010-09-15 | 株式会社東芝 | 相変化記録媒体 |
JP2008159207A (ja) * | 2006-12-26 | 2008-07-10 | Toshiba Corp | 光記録媒体及び光記録再生装置 |
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US5252370A (en) * | 1991-04-23 | 1993-10-12 | Tdk Corporation | Optical recording medium and method for making |
JP3151058B2 (ja) * | 1992-08-05 | 2001-04-03 | パイオニア株式会社 | 光ディスク |
JP3170062B2 (ja) * | 1992-09-25 | 2001-05-28 | パイオニア株式会社 | 光ディスク |
JP3287634B2 (ja) * | 1993-03-12 | 2002-06-04 | パイオニア株式会社 | 光ディスク及び光ディスク再生装置 |
JP3506491B2 (ja) * | 1994-06-23 | 2004-03-15 | Tdk株式会社 | 光情報媒体 |
DE19612823C2 (de) * | 1995-03-31 | 2001-03-01 | Mitsubishi Chem Corp | Optisches Aufzeichnungsverfahren |
US5728441A (en) * | 1995-12-01 | 1998-03-17 | Samsung Electronics Co., Ltd. | Recordable/replayable optical recording medium and optical recording method therefor |
CN1188847C (zh) * | 1997-02-28 | 2005-02-09 | 旭化成株式会社 | 相变型光记录介质及其制造方法和记录方法 |
KR100271567B1 (ko) * | 1997-08-14 | 2000-11-15 | 구자홍 | 상변화 광디스크 |
WO1999020472A1 (fr) * | 1997-10-17 | 1999-04-29 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Dispositif a memoire |
JP3648378B2 (ja) * | 1998-03-20 | 2005-05-18 | 株式会社東芝 | 光ディスク |
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EP1178476B1 (en) * | 2000-08-02 | 2006-05-24 | Mitsubishi Kagaku Media Co., Ltd. | Optical recording medium and process for producing an optical recording medium |
US6700862B2 (en) * | 2000-10-03 | 2004-03-02 | Matsushita Electric Industrial Co., Ltd. | Optical disc and manufacturing method for the same |
SG116432A1 (en) * | 2000-12-26 | 2005-11-28 | Kobe Steel Ltd | Reflective layer or semi-transparent reflective layer for use in optical information recording media, optical information recording media and sputtering target for use in the optical information recording media. |
-
2001
- 2001-10-09 WO PCT/JP2001/008871 patent/WO2002031825A1/ja active Application Filing
- 2001-10-09 CN CNB018170617A patent/CN1199166C/zh not_active Expired - Fee Related
- 2001-10-09 EP EP01972724A patent/EP1327977B1/en not_active Expired - Lifetime
- 2001-10-09 US US10/343,355 patent/US6987721B2/en not_active Expired - Fee Related
- 2001-10-09 JP JP2002535123A patent/JP4084660B2/ja not_active Expired - Fee Related
- 2001-10-09 DE DE60137520T patent/DE60137520D1/de not_active Expired - Lifetime
- 2001-10-09 AU AU2001292370A patent/AU2001292370A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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JPWO2002031825A1 (ja) | 2004-02-19 |
US6987721B2 (en) | 2006-01-17 |
DE60137520D1 (de) | 2009-03-12 |
JP4084660B2 (ja) | 2008-04-30 |
CN1468431A (zh) | 2004-01-14 |
US20030174629A1 (en) | 2003-09-18 |
EP1327977A1 (en) | 2003-07-16 |
EP1327977B1 (en) | 2009-01-21 |
AU2001292370A1 (en) | 2002-04-22 |
EP1327977A4 (en) | 2008-03-05 |
WO2002031825A1 (fr) | 2002-04-18 |
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