CN119585852A - 等离子体处理方法和等离子体处理装置 - Google Patents

等离子体处理方法和等离子体处理装置 Download PDF

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Publication number
CN119585852A
CN119585852A CN202380053639.3A CN202380053639A CN119585852A CN 119585852 A CN119585852 A CN 119585852A CN 202380053639 A CN202380053639 A CN 202380053639A CN 119585852 A CN119585852 A CN 119585852A
Authority
CN
China
Prior art keywords
substrate
plasma
chamber
plasma processing
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380053639.3A
Other languages
English (en)
Chinese (zh)
Inventor
清水祐介
中村谕
小津俊久
松本直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN119585852A publication Critical patent/CN119585852A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202380053639.3A 2022-07-22 2023-07-19 等离子体处理方法和等离子体处理装置 Pending CN119585852A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2022-117420 2022-07-22
JP2022117500 2022-07-22
JP2022117412 2022-07-22
JP2022-117412 2022-07-22
JP2022-117500 2022-07-22
JP2022117420 2022-07-22
PCT/JP2023/026370 WO2024019075A1 (ja) 2022-07-22 2023-07-19 プラズマ処理方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
CN119585852A true CN119585852A (zh) 2025-03-07

Family

ID=89617649

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380053639.3A Pending CN119585852A (zh) 2022-07-22 2023-07-19 等离子体处理方法和等离子体处理装置

Country Status (6)

Country Link
US (1) US20250166980A1 (https=)
JP (1) JPWO2024019075A1 (https=)
KR (1) KR20250040979A (https=)
CN (1) CN119585852A (https=)
TW (1) TW202420894A (https=)
WO (1) WO2024019075A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233492A (ja) 1998-02-06 1999-08-27 Tokyo Electron Ltd プラズマ処理装置のプラズマ光の検出窓
JP4175456B2 (ja) 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
JP5433171B2 (ja) * 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
WO2010038674A1 (ja) 2008-09-30 2010-04-08 東京エレクトロン株式会社 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置
JP7202972B2 (ja) * 2018-06-29 2023-01-12 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
CN118588527A (zh) * 2019-07-25 2024-09-03 朗姆研究公司 衬底处理系统中非均匀性的原位实时感测和补偿

Also Published As

Publication number Publication date
JPWO2024019075A1 (https=) 2024-01-25
WO2024019075A1 (ja) 2024-01-25
TW202420894A (zh) 2024-05-16
KR20250040979A (ko) 2025-03-25
US20250166980A1 (en) 2025-05-22

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