JPWO2024019075A1 - - Google Patents
Info
- Publication number
- JPWO2024019075A1 JPWO2024019075A1 JP2024535106A JP2024535106A JPWO2024019075A1 JP WO2024019075 A1 JPWO2024019075 A1 JP WO2024019075A1 JP 2024535106 A JP2024535106 A JP 2024535106A JP 2024535106 A JP2024535106 A JP 2024535106A JP WO2024019075 A1 JPWO2024019075 A1 JP WO2024019075A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022117500 | 2022-07-22 | ||
| JP2022117412 | 2022-07-22 | ||
| JP2022117420 | 2022-07-22 | ||
| PCT/JP2023/026370 WO2024019075A1 (ja) | 2022-07-22 | 2023-07-19 | プラズマ処理方法及びプラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024019075A1 true JPWO2024019075A1 (https=) | 2024-01-25 |
Family
ID=89617649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024535106A Pending JPWO2024019075A1 (https=) | 2022-07-22 | 2023-07-19 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20250166980A1 (https=) |
| JP (1) | JPWO2024019075A1 (https=) |
| KR (1) | KR20250040979A (https=) |
| CN (1) | CN119585852A (https=) |
| TW (1) | TW202420894A (https=) |
| WO (1) | WO2024019075A1 (https=) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11233492A (ja) | 1998-02-06 | 1999-08-27 | Tokyo Electron Ltd | プラズマ処理装置のプラズマ光の検出窓 |
| JP4175456B2 (ja) | 2002-03-26 | 2008-11-05 | 株式会社 東北テクノアーチ | オンウエハ・モニタリング・システム |
| US7578301B2 (en) * | 2005-03-28 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
| JP5433171B2 (ja) * | 2008-06-16 | 2014-03-05 | 株式会社日立ハイテクノロジーズ | 試料温度の制御方法 |
| WO2010038674A1 (ja) | 2008-09-30 | 2010-04-08 | 東京エレクトロン株式会社 | 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置 |
| JP7202972B2 (ja) * | 2018-06-29 | 2023-01-12 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム |
| CN118588527A (zh) * | 2019-07-25 | 2024-09-03 | 朗姆研究公司 | 衬底处理系统中非均匀性的原位实时感测和补偿 |
-
2023
- 2023-07-19 CN CN202380053639.3A patent/CN119585852A/zh active Pending
- 2023-07-19 KR KR1020257004969A patent/KR20250040979A/ko active Pending
- 2023-07-19 WO PCT/JP2023/026370 patent/WO2024019075A1/ja not_active Ceased
- 2023-07-19 JP JP2024535106A patent/JPWO2024019075A1/ja active Pending
- 2023-07-21 TW TW112127269A patent/TW202420894A/zh unknown
-
2025
- 2025-01-21 US US19/033,080 patent/US20250166980A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024019075A1 (ja) | 2024-01-25 |
| CN119585852A (zh) | 2025-03-07 |
| TW202420894A (zh) | 2024-05-16 |
| KR20250040979A (ko) | 2025-03-25 |
| US20250166980A1 (en) | 2025-05-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260422 |