KR20250040979A - 플라즈마 처리 방법 및 플라즈마 처리 장치 - Google Patents

플라즈마 처리 방법 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR20250040979A
KR20250040979A KR1020257004969A KR20257004969A KR20250040979A KR 20250040979 A KR20250040979 A KR 20250040979A KR 1020257004969 A KR1020257004969 A KR 1020257004969A KR 20257004969 A KR20257004969 A KR 20257004969A KR 20250040979 A KR20250040979 A KR 20250040979A
Authority
KR
South Korea
Prior art keywords
substrate
plasma
substrate support
chamber
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257004969A
Other languages
English (en)
Korean (ko)
Inventor
유스케 시미즈
사토루 나카무라
도시히사 오즈
나오키 마쓰모토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20250040979A publication Critical patent/KR20250040979A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/67253—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020257004969A 2022-07-22 2023-07-19 플라즈마 처리 방법 및 플라즈마 처리 장치 Pending KR20250040979A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2022117500 2022-07-22
JPJP-P-2022-117420 2022-07-22
JPJP-P-2022-117500 2022-07-22
JP2022117412 2022-07-22
JPJP-P-2022-117412 2022-07-22
JP2022117420 2022-07-22
PCT/JP2023/026370 WO2024019075A1 (ja) 2022-07-22 2023-07-19 プラズマ処理方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20250040979A true KR20250040979A (ko) 2025-03-25

Family

ID=89617649

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257004969A Pending KR20250040979A (ko) 2022-07-22 2023-07-19 플라즈마 처리 방법 및 플라즈마 처리 장치

Country Status (6)

Country Link
US (1) US20250166980A1 (https=)
JP (1) JPWO2024019075A1 (https=)
KR (1) KR20250040979A (https=)
CN (1) CN119585852A (https=)
TW (1) TW202420894A (https=)
WO (1) WO2024019075A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233492A (ja) 1998-02-06 1999-08-27 Tokyo Electron Ltd プラズマ処理装置のプラズマ光の検出窓
JP2003282546A (ja) 2002-03-26 2003-10-03 Tohoku Techno Arch Co Ltd オンウエハ・モニタリング・システム
JP2010109350A (ja) 2008-09-30 2010-05-13 Tokyo Electron Ltd 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
JP5433171B2 (ja) * 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
JP7202972B2 (ja) * 2018-06-29 2023-01-12 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
CN118588527A (zh) * 2019-07-25 2024-09-03 朗姆研究公司 衬底处理系统中非均匀性的原位实时感测和补偿

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233492A (ja) 1998-02-06 1999-08-27 Tokyo Electron Ltd プラズマ処理装置のプラズマ光の検出窓
JP2003282546A (ja) 2002-03-26 2003-10-03 Tohoku Techno Arch Co Ltd オンウエハ・モニタリング・システム
JP2010109350A (ja) 2008-09-30 2010-05-13 Tokyo Electron Ltd 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置

Also Published As

Publication number Publication date
JPWO2024019075A1 (https=) 2024-01-25
WO2024019075A1 (ja) 2024-01-25
CN119585852A (zh) 2025-03-07
TW202420894A (zh) 2024-05-16
US20250166980A1 (en) 2025-05-22

Similar Documents

Publication Publication Date Title
US20200227289A1 (en) Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus
KR20240013700A (ko) 시즈닝 방법 및 플라즈마 처리 장치
JP7202972B2 (ja) プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
US20200111648A1 (en) Plasma processing apparatus and method for measuring thickness of ring member
KR102886431B1 (ko) 플라스마 처리 장치 및 기판 처리 시스템
US20230087660A1 (en) Plasma processing apparatus
TWI863942B (zh) 電漿處理裝置、計算方法及計算程式
US7993487B2 (en) Plasma processing apparatus and method of measuring amount of radio-frequency current in plasma
US20250218744A1 (en) Plasma processing apparatus
KR20250040979A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP2024014745A (ja) 検出方法及びプラズマ処理装置
KR20250123936A (ko) 플라스마 처리 장치 및 플라스마 처리 방법
US12136541B2 (en) Wiring abnormality detection method and plasma processing apparatus
US20250149315A1 (en) Adjustment method and plasma processing apparatus
CN119522475A (zh) 监视方法和等离子体处理装置
US20250149316A1 (en) Plasma processing method and plasma processing apparatus
JP2024014744A (ja) シーズニング方法及びプラズマ処理装置
US12531213B2 (en) Plasma processing apparatus
US20240030012A1 (en) Detection method and plasma processing apparatus
US20240071734A1 (en) Lower electrode mechanism and substrate processing method
CN117438273A (zh) 陈化方法以及等离子体处理装置
CN117438274A (zh) 检测方法以及等离子体处理装置
US12009182B2 (en) Temperature control method and temperature control device
TW202233025A (zh) 電漿處理裝置之異常檢測方法及電漿處理裝置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000