TW202420894A - 電漿處理方法及電漿處理裝置 - Google Patents

電漿處理方法及電漿處理裝置 Download PDF

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Publication number
TW202420894A
TW202420894A TW112127269A TW112127269A TW202420894A TW 202420894 A TW202420894 A TW 202420894A TW 112127269 A TW112127269 A TW 112127269A TW 112127269 A TW112127269 A TW 112127269A TW 202420894 A TW202420894 A TW 202420894A
Authority
TW
Taiwan
Prior art keywords
substrate
plasma
substrate support
chamber
support portion
Prior art date
Application number
TW112127269A
Other languages
English (en)
Chinese (zh)
Inventor
清水祐介
中村諭
小津俊久
松本直樹
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202420894A publication Critical patent/TW202420894A/zh

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963End-point detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW112127269A 2022-07-22 2023-07-21 電漿處理方法及電漿處理裝置 TW202420894A (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2022-117420 2022-07-22
JP2022117500 2022-07-22
JP2022117412 2022-07-22
JP2022-117412 2022-07-22
JP2022-117500 2022-07-22
JP2022117420 2022-07-22

Publications (1)

Publication Number Publication Date
TW202420894A true TW202420894A (zh) 2024-05-16

Family

ID=89617649

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112127269A TW202420894A (zh) 2022-07-22 2023-07-21 電漿處理方法及電漿處理裝置

Country Status (6)

Country Link
US (1) US20250166980A1 (https=)
JP (1) JPWO2024019075A1 (https=)
KR (1) KR20250040979A (https=)
CN (1) CN119585852A (https=)
TW (1) TW202420894A (https=)
WO (1) WO2024019075A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11233492A (ja) 1998-02-06 1999-08-27 Tokyo Electron Ltd プラズマ処理装置のプラズマ光の検出窓
JP4175456B2 (ja) 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
US7578301B2 (en) * 2005-03-28 2009-08-25 Lam Research Corporation Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system
JP5433171B2 (ja) * 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
WO2010038674A1 (ja) 2008-09-30 2010-04-08 東京エレクトロン株式会社 基板の異常載置状態の検知方法、基板処理方法、コンピュータ読み取り可能な記憶媒体および基板処理装置
JP7202972B2 (ja) * 2018-06-29 2023-01-12 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
CN118588527A (zh) * 2019-07-25 2024-09-03 朗姆研究公司 衬底处理系统中非均匀性的原位实时感测和补偿

Also Published As

Publication number Publication date
JPWO2024019075A1 (https=) 2024-01-25
WO2024019075A1 (ja) 2024-01-25
CN119585852A (zh) 2025-03-07
KR20250040979A (ko) 2025-03-25
US20250166980A1 (en) 2025-05-22

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