CN111696844B - 等离子体处理装置 - Google Patents
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Abstract
本发明提供一种防止异常放电的等离子体处理装置。提供一种等离子体处理装置,其施加高频的电力,其中,该等离子体处理装置具有:腔室;载物台,其位于所述腔室内且在上部载置基板,并在内部具有加热器;以及环状构件,其在所述载物台的周围与所述载物台分开地设置,并由电介质形成,在所述环状构件的下表面在径向上形成有环状的槽。
Description
技术领域
本公开涉及一种等离子体处理装置。
背景技术
提案有在施加高频的电力的装置中抑制异常放电的技术(例如参照专利文献1~3)。专利文献1提案一种具有上屏蔽件的溅射装置,该上屏蔽件隔着间隙配置于支承靶的背板与保护腔室内壁不受溅射粒子影响的屏蔽件之间。在上屏蔽件形成有连结该间隙和腔室内的贯通孔,由此,能够抑制由O型密封圈产生的气体穿过上屏蔽件与靶之间的间隙,而抑制以气体为媒介的异常放电。
专利文献2提案有一种在利用许多纵槽使电磁波向腔室内透过的电介质窗设置处理气体导入用的气体流路的情况下,有效地防止气体流路中的等离子体的逆流乃至异常放电并且得到充分高的气体流导的方案。
在专利文献3中,将突起构件的外周面与上部容器的侧壁内周面之间的间隙调整为2.5mm≤d≤5mm,或将垂直部分的厚度设为3mm≤t≤8mm,或将突起构件的圆筒部的突出长度调整为能够覆盖侧壁内周面的垂直部分的长度。由此,提案一种控制电介质板的周边部的电场强度的方案。
专利文献1:日本特开2005-264177号公报
专利文献2:日本特开2016-15496号公报
专利文献3:国际公开第2009/099186号小册子
发明内容
发明要解决的问题
本公开提供一种能够防止异常放电的技术。
用于解决问题的方案
根据本公开的一技术方案,提供一种等离子体处理装置,其施加高频的电力,其中,该等离子体处理装置具有:腔室;载物台,其位于所述腔室内,在上部载置基板,并在内部具有加热器;以及环状构件,其在所述载物台的周围与所述载物台分开地设置,并由电介质形成,在所述环状构件的下表面在径向上形成有环状的槽。
发明的效果
根据一技术方案,能够防止异常放电。
附图说明
图1是表示一实施方式所涉及的等离子体处理装置的一个例子的剖面示意图。
图2是与比较例进行比较地表示一实施方式和变形例所涉及的载物台的周围的一个例子的图。
图3是表示比较例所涉及的载物台的周围的电场的一个例子的图。
图4是用于说明一实施方式所涉及的载物台的周围的位移电流的电路结构图。
图5是表示一实施方式所涉及的环状构件和比较例的一个例子的图。
具体实施方式
以下,参照附图说明用于实施本公开的方式。在各附图中,存在对相同结构部分标注相同的附图标记并省略重复的说明的情况。
[等离子体处理装置]
使用图1说明一实施方式所涉及的等离子体处理装置100。图1是表示一实施方式所涉及的等离子体处理装置100的一个例子的剖面示意图。等离子体处理装置100具有腔室1。腔室1具有容器12和盖体11。容器12和盖体11例如由铝形成,盖体11设于有底的容器12的开口。腔室1和盖体11利用O型密封圈13密封。由此,腔室1的内部能够以真空状态密闭。在容器12的内壁和盖体11的内壁也可以形成有针对等离子体具有耐腐蚀性的膜。该膜也可以为氧化铝、氧化钇等陶瓷。
在容器12设有四个载物台S,在图1中,示出四个载物台中的两个。载物台S形成为扁平的圆板状,用于载置晶圆W。载物台S例如由氧化铝(Al2O3)等电介质形成。在载物台S的内部埋设有用于加热晶圆W的加热器20。加热器20例如由陶瓷的片状或板状的电阻发热体构成,自电源部向该加热器20供给电力而该加热器20发热,并加热载物台S的载置面,由此将晶圆W升温至适于成膜的规定的工艺温度。例如,加热器20将载置于载物台S上的晶圆W加热至100℃~300℃。
载物台S具有支承部22,该支承部22自载物台S的下表面中心部朝向下方延伸并贯通容器12的底部,该支承部22的一端支承于升降机构35。通过升降机构35使支承部22升降,载物台S能够在进行晶圆W的处理的处理位置(图1所示的位置)与进行晶圆W的交接的交接位置之间升降。另外,利用升降机构35能够调整载物台S与上部电极14之间的距离(Gap)。
交接位置为图1的由双点划线表示的载物台S的位置。在该位置,经由送入送出口与外部的输送机构之间进行晶圆W的交接。载物台S形成有供升降销30的轴部贯穿的贯通孔。
在使载物台S自晶圆W的处理位置(参照图1)移动至晶圆W的交接位置的状态下,升降销30的头部自载物台S的载置面突出。由此,升降销30的头部自晶圆W的下表面进行支承,并将晶圆W自载物台S的载置面抬起,与外部的输送机构之间进行晶圆W的交接。
在各载物台S的上方且盖体11的下部,与各载物台S相对地设有还作为喷头发挥功能的四个上部电极14。上部电极14由铝等的导体形成,具有大致圆盘形状。上部电极14支承于盖体11。在载物台S与加热器20平行地埋设有网格状的金属的电极板21。由此,载物台S还作为与上部电极14相对的下部电极发挥功能。
在上部电极14设有许多气体供给孔16。在阀V和流量控制器MFC的控制下,自气体供给部15输出的规定的流量的成膜用的气体(反应性气体)在规定的时刻经由气体线路17向气体导入口18导入。导入的气体经过形成于盖体11的贯通孔19和形成于上部电极14的上表面与盖体11之间的流路24自许多气体供给孔16向容器12内导入。
另外,在每个上部电极14经由匹配器37连接有RF电源36,自RF电源36向上部电极14施加例如0.4MHz~2450MHz的频率的高频的电力。导入到容器12内的气体利用高频的电力等离子体化。利用在上部电极14与载物台S之间的空间生成的等离子体,对载物台S上的晶圆W施加成膜处理等等离子体处理。
在载物台S的周围与载物台S分开地(参照图1的间隙44)设有由石英等电介质形成的环状构件40。另外,在环状构件40之上且上部电极14的外周配置有排气歧管41。环状构件40和排气歧管41一体地形成,并固定于容器12的侧壁和上部电极14的外周。
排气歧管41由陶瓷形成,并在周向上具有排气通路42。经过了排气通路42的气体经过设于排气歧管41与环状构件40之间的多个排气口43,并在载物台S下经过而向容器12的底部的排气口6侧流动,利用真空泵45自排气口6向腔室1外排出。排气口43也可以不是分成多个,而是在载物台S侧在周向上开口的一个排气口。
此外,列举在腔室1的底部设有一个排气口6的例子进行了说明,但并不限定于此。例如,既可以在腔室1的顶部设有一个或多个排气口6,也可以在腔室1的底部和顶部设有一个或多个排气口6。
等离子体处理装置100还能够包括控制部50。控制部50可以是具备处理器、存储器等存储部、输入装置、显示装置、信号的输入输出接口等的计算机。控制部50控制等离子体处理装置100的各部分。对于控制部50,操作员能够使用输入装置进行命令的输入操作等,以管理等离子体处理装置100。另外,在控制部50中,利用显示装置,能够可视化地显示等离子体处理装置100的运行状况。而且,在存储部储存有控制程序和制程数据。利用处理器执行控制程序,以在等离子体处理装置100中执行各种处理。处理器执行控制程序,并依据制程数据控制等离子体处理装置100的各部分。
[异常放电与对策]
接着,参照图2说明在载物台S的周围容易发生的异常放电与其对策。图2是表示一实施方式和变形例所涉及的载物台S的周围的一个例子和比较例的图。图2的(a)表示比较例所涉及的载物台S及其周围的结构的一个例子。图2的(b)表示本实施方式所涉及的载物台S及其周围的结构的一个例子。图2的(c)表示本实施方式的变形例所涉及的载物台S及其周围的结构的一个例子。
向上部电极14施加自图1所示的RF电源36输出的高频的电力。由此,如图2的(a)所示,在上部电极14与作为下部电极发挥功能的载物台S之间流动位移电流(以下称作“位移电流3”。)。此外,位移电流由电场的流动即电场的时间微分表示。
与此同时,自RF电源36输出的高频在上部电极14的外侧的金属的盖体11和容器12的表面流动,并在排气歧管41中传输。由此,在由陶瓷形成的排气歧管41内产生电场。
根据安培麦克斯韦定律,在交变电场中,即使是陶瓷等电介质,也会流动作为电场的时间微分的位移电流。因而,在排气歧管41流动图2的(a)所示的两个方向的位移电流(以下,将图2的(a)所示的内侧(上部电极14侧)的位移电流称作“位移电流1”,将外侧的位移电流称作“位移电流2”。)。
而且,如图2的(a)所示,在载物台S,自载物台S的中央朝向外侧流动位移电流(以下称作“位移电流4”。),自载物台S的中央朝向下侧流动位移电流(以下称作“位移电流1”。)。
位移电流3在上部电极14与载物台S的电极板21之间流动,而有助于生成等离子体。因此,优选位移电流3较大。相对于此,若位移电流4较大,则如图3所示,在载物台S与环状构件40之间的间隙44产生较强的电场。由Eslit表示在间隙44产生的电场。特别是,载物台S的周围成为电介质的载物台S→真空空间的间隙44→电介质的环状构件40这样介电常数改变从而阻碍位移电流的构造,因此,在该间隙44的结构部分,电场Eslit变强。
例如,若氧化铝的介电常数设为εAl2O3、真空的介电常数设为ε0,产生于由氧化铝形成的载物台S的电场设为EAl2O3,则在间隙44产生的电场Eslit由以下的式(1)表示。
Eslit=(εAl2O3/ε0)×EAl2O3···(1)
根据式(1),载物台S的电介质的介电常数越大于真空的介电常数ε0,则在间隙44产生的电场Eslit越大,而在载物台S的周围越容易发生异常放电。例如,由于载物台S的电介质的介电常数εAl2O3相对于真空的介电常数ε0为大约10,因此,在由氧化铝形成载物台S的情况下,在载物台S的周围的间隙44产生的电场Eslit成为在载物台S产生的电场EAl2O3的大约10倍。
特别是,在载物台S中沿着水平方向埋入有加热器20和电极板21这两个金属。该情况下,在载物台S中容易产生较强的位移电流4。于是,在本实施方式中,设为使载物台S的周围的载物台S→间隙44→环状构件40的位移电流的传输路径的阻抗变高的结构。
由此,能够抑制在载物台S的周围产生异常放电。另外,由此,通过尽可能地减小真空部分的除了在上部电极14与载物台S之间流动的位移电流3以外的位移电流,能够增大位移电流3,提高等离子体生成效率。
图2的(b)表示本实施方式所涉及的载物台S的周围的结构的一个例子。图2的(b)的上图是放大表示图1的虚线框E内的图。如图2的(b)的下图中进一步放大所示,在本实施方式所涉及的环状构件40的下表面140,在间隙44的附近在径向上设有多个环状的槽40a。多个槽40a形成为狭缝状。在图2的(b)的例子中,在径向上形成有三个环状的槽40a,但并不限定于此,环状的槽40a的个数既可以是一个或两个,也可以是四个以上。槽40a具有相同的宽度和相同的深度,并形成为同心圆状。
在图2的(a)的比较例中,在环状构件40不具有槽。此时,在作为真空空间的间隙44流动的位移电流Id1由下述的数学式表示,如图4的左侧的电路所示,与向载物台S流动的位移电流I大致相等。
数学式1
另一方面,在图2的(b)的本实施方式中,通过形成在环状构件40的下表面140开口的三个环状的槽40a,如图4所示,能够阻碍向载物台S流动的位移电流I'(图2的(a)所示的位移电流4)的流动。也就是说,如图4的右侧的串联电路所示,能够设为通过利用槽40a分配环状构件40内的电场来提高载物台S→间隙44→环状构件40的位移电流的传输路径的阻抗的结构。也就是说,在槽40a附近,阻抗增大,在间隙44流动的位移电流Id1减小。因而,此时在间隙44流动的位移电流Id1与向载物台S流动的位移电流I'(位移电流4)大致相等,且远小于在图2的(a)所示的比较例的结构中在间隙44流动的位移电流I。如上所述,根据本实施方式所涉及的环状构件40,能够减小在间隙44流动的位移电流Id1。
而且,如图2的(b)的下图所示,环状构件40在形成有槽40a的部分向下方延伸,在环状构件的下表面形成台阶40b。由此,在台阶40b的部分使环状构件40的下表面140低于载物台S的下表面141。利用该结构和槽40a,分配由穿过环状构件40的高频发生的电场,并且在环状构件40的端部提高阻抗。由此,能够设为位移电流I'(位移电流4)难以自载物台S向环状构件40流动的构造。
如上所述,本实施方式所涉及的环状构件40作为使高频反射的绝缘构件发挥功能。由此,减弱载物台S与环状构件40之间的间隙44的电场强度,能够抑制在载物台S的周围产生异常放电。
[变形例]
接着,说明图2的(c)所示的变形例。例如,如图2的(c)所示,也可以是,载物台S具有自端部向下方延伸的陶瓷的连结构件Sb,在连结构件Sb的周围与连结构件Sb分开地设置环状构件40。如图2的(c)所示,环状构件40可以具有台阶。
间隙44的周围的载物台S和环状构件40越厚且越粗,则阻抗越低,位移电流越容易通过而间隙44的电场越强。因而,在本变形例中,自载物台S的端部向下方设置较薄的陶瓷的连结构件Sb。由此,能够使连结构件Sb作为电容器发挥功能,提高阻抗,使位移电流难以通过。另外,通过使环状构件40较薄并设置台阶而进一步提高阻抗,由此,能够作为使高频反射的绝缘构件进一步提高环状构件40的功能。由此,减弱载物台S与环状构件40之间的间隙44的电场强度,能够抑制在载物台S的周围产生异常放电。
此外,还可以组合应用本实施方式所涉及的结构和变形例所涉及的结构。而且,还可以组合应用图5的(a)和图5的(b)所示的环状构件40和变形例所涉及的结构。
图5的(a)和图5的(b)所示的环状构件40具有两个环状的槽40a。图5的(b)所示的槽40a比图5的(a)所示的槽40a深。另外,相邻的槽40a均具有相同的宽度和相同的深度。
另外,图5的(a)和图5的(b)所示的两个环状的槽40a的宽度优选与载物台S和环状构件40之间的间隔(间隙44)大致相同或为相同程度。而且,槽40a的间隔优选与间隙44大致相同或为相同程度。
如图5的(c)所示,在设于环状构件200的槽200a的宽度明显比间隙44宽的情况下,电场在槽200a集中,容易在槽200a和间隙44的周边产生异常放电。因而,设于环状构件40的槽40a也可以为一个,但其宽度优选与载物台S和环状构件40之间的间隔(间隙44)大致相同或为相同程度。
如以上说明那样,根据本实施方式和变形例所涉及的等离子体处理装置100,通过在载物台S的周围与载物台S分开设置的环状构件40的下表面形成槽40a,从而分配由穿过环状构件40的高频产生的电场。由此,能够使载物台S与环状构件40之间的间隙44的电场强度降低,减小向载物台S流动的位移电流,能够防止异常放电。
应该认为,此次公开的一实施方式所涉及的等离子体处理装置在所有方面为例示,并不是限制性的。上述的实施方式只要不偏离权利要求书及其主旨,就能够以各种各样的形态进行变形和改良。上述多个实施方式中记载的事项在不矛盾的范围内还能够采取其他的结构,另外,能够在不矛盾的范围内进行组合。
本公开的等离子体处理装置能够应用ALD(Atomic Layer Deposition,原子层沉积)装置、电容耦合等离子体(Capacitively Coupled Plasma,CCP)、电感耦合等离子体(Inductively Coupled Plasma,ICP)、径向线缝隙天线(Radial Line Slot Antenna)、电子回旋共振等离子体(Electron Cyclotron Resonance Plasma,ECR)、螺旋波等离子体(Helicon Wave Plasma,HWP)中的任意类型。
另外,本公开的等离子体处理装置并不限定于图1所示的能够同时处理载置于四个载物台的四张晶圆W的装置。例如,本公开的等离子体处理装置还可以是能够同时处理在与上部电极14相对配置的两个以上的载物台S载置的两张以上的晶圆W的装置。另外,本公开的等离子体处理装置也可以是能够依次处理在与上部电极14相对配置的一个载物台S载置的一张晶圆W的装置。
Claims (9)
1.一种等离子体处理装置,其施加高频的电力,其中,
该等离子体处理装置具有:
载物台,其设于腔室内,该载物台在上部载置基板,并在内部具有加热器;以及
环状构件,其在所述载物台的周围与所述载物台分开地设置,并由电介质形成,
在所述环状构件的下表面在径向上形成有环状的槽,所述环状构件在形成有所述环状的槽的部分向下方延伸,从而形成所述环状的槽从所述环状构件的下表面突出的台阶。
2.根据权利要求1所述的等离子体处理装置,其中,
该等离子体处理装置具有多个所述环状的槽,
所述环状的槽分别具有相同的宽度和相同的深度。
3.根据权利要求2所述的等离子体处理装置,其中,
多个所述环状的槽的间隔与所述载物台和所述环状构件之间的间隔相同。
4.根据权利要求2所述的等离子体处理装置,其中,
多个所述环状的槽的宽度与所述载物台和所述环状构件之间的间隔相同。
5.根据权利要求1~4中任一项所述的等离子体处理装置,其中,
在所述环状构件之上设有排气歧管。
6.根据权利要求5所述的等离子体处理装置,其中,
所述排气歧管与所述环状构件一体形成,在周向上具有多个排气口。
7.根据权利要求1~4中任一项所述的等离子体处理装置,其中,
该等离子体处理装置具有自所述载物台的下表面端部向下方延伸的连结构件,
在所述连结构件的周围与所述连结构件分开地设有所述环状构件。
8.根据权利要求1~4中任一项所述的等离子体处理装置,其中,
该等离子体处理装置具有用于施加0.4MHz~2450MHz的频率的高频的电力的高频电源。
9.根据权利要求1~4中任一项所述的等离子体处理装置,其中,
该等离子体处理装置具有与所述载物台相对的上部电极,
向所述上部电极或所述载物台施加所述高频的电力。
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TW202037743A (zh) | 2020-10-16 |
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JP2020147795A (ja) | 2020-09-17 |
US20200294842A1 (en) | 2020-09-17 |
KR20200110198A (ko) | 2020-09-23 |
US11784085B2 (en) | 2023-10-10 |
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