CN1184725A - 制备金属粉末的方法 - Google Patents
制备金属粉末的方法 Download PDFInfo
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- CN1184725A CN1184725A CN97121399A CN97121399A CN1184725A CN 1184725 A CN1184725 A CN 1184725A CN 97121399 A CN97121399 A CN 97121399A CN 97121399 A CN97121399 A CN 97121399A CN 1184725 A CN1184725 A CN 1184725A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 101
- 239000002184 metal Substances 0.000 title claims abstract description 101
- 239000000843 powder Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 7
- 239000000428 dust Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000010948 rhodium Substances 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000011572 manganese Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 15
- 238000002360 preparation method Methods 0.000 abstract description 13
- 150000003839 salts Chemical class 0.000 abstract description 10
- 238000004220 aggregation Methods 0.000 abstract description 2
- 230000002776 aggregation Effects 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000008187 granular material Substances 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 239000010944 silver (metal) Substances 0.000 description 9
- 238000005118 spray pyrolysis Methods 0.000 description 9
- SXTLQDJHRPXDSB-UHFFFAOYSA-N copper;dinitrate;trihydrate Chemical compound O.O.O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O SXTLQDJHRPXDSB-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 229910001252 Pd alloy Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000003868 ammonium compounds Chemical class 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- AOPCKOPZYFFEDA-UHFFFAOYSA-N nickel(2+);dinitrate;hexahydrate Chemical compound O.O.O.O.O.O.[Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O AOPCKOPZYFFEDA-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GPNDARIEYHPYAY-UHFFFAOYSA-N palladium(ii) nitrate Chemical compound [Pd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O GPNDARIEYHPYAY-UHFFFAOYSA-N 0.000 description 1
- -1 powder metallurgy Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002560 therapeutic procedure Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
- H01G4/0085—Fried electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/16—Metallic particles coated with a non-metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23D—ENAMELLING OF, OR APPLYING A VITREOUS LAYER TO, METALS
- C23D5/00—Coating with enamels or vitreous layers
- C23D5/02—Coating with enamels or vitreous layers by wet methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
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- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
Abstract
一种制备金属粉末的方法,包括以下步骤:将含有至少一种金属盐的溶液制成细小液滴,加热此液滴至高于金属盐分解温度的温度,其中将至少一种能热分解的化合物加到该溶液中,该化合物热分解后产生随着加热在加热温度下保持不熔化的金属、半金属或者金属或半金属氧化物,并且金属、半金属和氧化物中的至少一种热偏聚在金属粉末表面附近。所形成的金属粉末具有均匀的粒径与良好的分散性,且不会熔化或附聚,适用于制备用于电路或电子元件的厚膜浆料。
Description
本发明涉及一种制备金属粉末的方法,特别涉及制备用于厚膜浆料的金属粉末的方法。
在电子学领域,诸如导体浆料和电阻浆料等厚膜浆料已经被用于电子线路和电子元件如电阻、电容和集成电路组件的生产。厚膜浆料是通过将诸如金属、合金或金属氧化物等导电性粉末视具体情况而定与玻质粘结剂或其他添加剂一同均匀混合并分散到有机载体中制成浆料而制备成的。在将厚膜浆料涂到基片上以后,在高温下烘烤或在较低的温度下加热固化,以形成导体膜或电阻膜。
用于上述厚膜浆料的金属粉末或合金粉末须具备以下特性:
(1)在浆料中良好的分散性,足以形成致密的均匀的膜。
(2)对电学性质造成不利影响的杂质含量较低。
(3)良好的结晶性足以提供合适的可烧结性。
(4)粒径为约0.1~10μm且形状一致。
制备上述金属粉末的传统方法包括如日本专利公告号为31522/1988、日本专利公开号172802/1994和279816/1994等所描述的喷雾热解法。根据此方法,至少含有一种金属盐的溶液被雾化形成小液滴,这些小液滴然后在高于金属盐分解温度的温度,优选金属熔点左右或更高的温度下被加热,以热分解金属盐,由此沉积出金属或合金粉末。
根据喷雾热解法,金属或合金粉末能够被很容易地制备,与通过温法还原或其类似方法制备的金属或合金粉末相比,通过喷雾热解法制备的金属或合金粉末具备良好的结晶性,较高的密度和高纯度并且具有适合厚膜浆料的性质。金属粉末的粒径能够通过正确确定金属盐溶液浓度、溶剂、雾化和加热条件等加以控制,此外,由于所得颗粒的金属组成与初始溶液的初始金属盐相一致,这使得易于控制组成,反过来,这也使得喷雾热解法适合制备多组分粉末。
总而言之,喷雾热解法可以提供具有良好分散性的粉末,因为金属颗粒是在气相状态下制备的,在这种条件下颗粒浓度较低。但是在形成金属粉末的过程中,依据诸如颗粒浓度显著增加或形成呈湍急气流形式的颗粒之类不同的条件,即使当温度达不到熔点时也会由于暴露于很高温度而引起颗粒的熔化,烧结和聚集。同样,在冷却所形成的粉末中,在一些操作方法下,颗粒之间也会产生强烈的聚集。在许多情况下很难将团粒打碎成颗粒,而导致在浆料中的分散性不佳。而且粉末的熔化或聚集引起在生产设备中的粘滞或沉积,或需要筛分团粒,这造成产品产量的减少,也使连续操作较为困难。这一现象十分显著。因此,特别是给具有较低熔点的金属如银粉末或银含量较高的合金粉末提出了一个问题。
本发明的目的在于不使该方法和操作复杂化的情况下有效地防止上述聚集现象发生。
根据本发明,在通过喷雾热解法形成金属粉末的步骤中,在金属粉末形成的同时,主要在金属粉末表面聚集高熔点金属或金属氧化物或其类似物,以防止所得颗粒熔化和聚集。
因此,本发明提供制备金属粉末的方法,包括以下步骤:将含有至少一种金属盐的溶液制成细小的液滴,并加热液滴到高于金属盐分解温度的温度,其中将至少一种能热分解的化合物加到该溶液中,该化合物热分解后产生随着加热在加热温度下保持不熔化的金属、半金属或者金属或半金属氧化物(下面称作“金属或其类似物),并且,至少一种“金属或其类似物”热偏聚在金属粉末表面附近。
在本发明中,有待被“金属或其类似物”覆盖的金属(主要金属)包括贵金属如银、金、铂、和钯,以及贱金属如铜、镍、钴、铁、铝、钼和钨,这些金属可以是纯金属,合金或其混合物中的任一种形态。本发明对于银粉末和银合金粉末(如银-钯合金)尤为适用。
作为原料的金属粉末盐可以是至少下列可热分解盐中的一种:硝酸盐、硫酸盐、氯化物、铵合物、磷酸盐、羧酸盐、金属醇化物,金属树脂酸盐,或配盐或复盐,使用至少两种金属盐的混合物可以提供一种合金或混合粉末。
根据本发明,在金属粉末表面偏聚的“金属或其类似物”在形成本发明金属粉末的条件下不熔化,并且难以以固溶体形式溶解在金属粉末中。例如,当设想制备银或银合金粉末时“金属或类似物”的例子包括金属如铑、锇、铱、铂、铁、钴、镍、铬和钼,以及钌,铁、钴、镍、铜、锌、镉、碱土金属,硼、铝、硅、锗、铅、铋、稀土金属,钛、锆、钒、铌、钽、铬、钼、钨和锰的氧化物。
依据要化合的金属粉,在用热分解法制备金属粉时,通过合适的选择和设定反应条件甚至也可使用以稳定态固溶体形式溶解的金属或半金属之类,设定的反应条件几乎不能导致在颗粒内部以固溶体形式溶解,这些条件有如热分解温度,反应时间,气氛和元素添加量。例如对于以金属形式的固溶体溶解而以氧化物形式的固溶体不溶解的元素,可以在只有添加元素被氧化的条件下进行热分解。
通过喷雾热解法制备的金属粉末具有良好的结晶性,颗粒内部无缺陷,实质上没有晶界。因此,从加入的化合物中分解和沉积(同时伴随着金属颗粒的生成)的“金属或其类似物”从颗粒内部排出,结果以高浓度在颗粒表面周围偏聚。尽管一小部分从添加的化合物中分解和沉积出的“金属或其类似物”作为主要组成以金属固溶体形式溶解并保留在颗粒内部,但只要绝大部分“金属或其类似物”在颗粒表面偏聚,就不会破坏本发明的效果。
待添加的化合物可热分解,并可使用上述“金属或其类似物”的前体。它可以从诸如包含硼酸盐、硅酸盐、硝酸盐、硫酸盐、氯化物、铵合物、磷酸盐、羧酸盐、金属醇化物、金属树脂酸盐,配盐或复盐的物组中进行合适的选择。
不要求从化合物中分解和沉积出来的“金属或其类似物”将金属粉末完全包覆。非常少量的“金属或其类似物”在金属粉末表面沉积,即足以起到防止溶化的作用。基于作为粉末主要成份的金属,加入金属或半金属元素的总量可不少于50ppm。对加入量的上限没有特别限制。但是,由于包含于颗粒内部的金属或半金属元素的数量随着加入的金属或半金属的数量的增加而增加,因此,加入量上限优选为约5%。
在浆料燃烧过程中阻止其烧结的效果也可依据加入的金属或半金属元素的沉积物的种类或数量来预料。但是产生过量的沉积物会造成烧结度和导电性的恶化或杂质数量的增加。这通常有害于电性质。鉴于此原因,必要时可在粉末形成后,用冲洗、浸蚀或其他方法,将沉积在金属粉末表面上的部分或几乎全部“金属或其类似物”去除,以减少杂质含量。基于金属粉末的重量(不包括粉末上沉积“金属或其类似物”),当存留在金属粉末表面的“金属或其类似物”的数量在50-2000ppm范围内,特别是在100-1000ppm范围内时,一般不会产生任何问题。如无其他说明,本文中所表明的“金属或其类似物”的数量均以粉末中作为主要组成的金属(不包括“金属或其类似物”)的数量为基淮计。
作为主要组成的金属盐和作为添加剂的化合物溶于水或诸如醇、丙酮或醚的有机溶剂或其混合溶剂中以制备例如金属盐混合溶液,通过诸如超声雾化器或双液雾化器的雾化器,使之形成细小液滴,然后以高于金属盐分解温度的温度加热,以进行热分解,加热处理最好在作为主要组成的金属或合金的熔点或更高的温度下进行。然而,当不要求高密度,形状一致或类似条件时,加热温度可以低于熔点。加热时的气氛可视金属种类和加入的金属或半金属种类、加热温度等条件而定从氧化、还原和惰性气氛中适当选择。
以下实施例将更详细地解释本发明,但本发明并不仅限于此。实施例1-4
将硝酸银和三水合硝酸铜溶于水中以制备银浓度为50-100g/l或铜浓度为10-500ppm(基于银量为100-1000ppm)的水溶液,如表1所示。此溶液通过超声雾化器形成小液滴,以空气为载气将液滴喷射至电炉中的加热到1000-1100℃的陶瓷管中,小液滴在通过加热区域时热分解以制备银粉末,收集形成的粉末,粉末的平均粒径通过激光色散粒径分布分析仪测定,结果列于表1,此外将粉末溶于硝酸,粉末中铜的浓度由ICP(电感耦合等离子体发射分光镜)测定,结果表明,铜的浓度与初始组成相一致。经认定铜是以氧化铜的形式沉积的。
将实施例2中制备的粉末(铜的加入量为200ppm,基于银)分散于3%的硫酸中并用其冲洗。其结果为,按粉末重量计算,溶解的银仅为560ppm,而溶解的铜则为125ppm,表明加入的大部分铜被洗脱。上述结果表明,加入的铜以高浓度偏聚在银粉表面。对比例1
纯银粉按与实施例1相同的方法制备,只是不添加三水合硝酸铜。如此制备的粉末处于显著的团粒状态,且平均粒径不能通过激光色散粒径分布分析仪测定。实施例5
重复实施例1的过程,只是用六水合硝酸镍替代三水合硝酸铜,按表1所示的量加入。于是制备出在其表面偏聚氧化镍的银粉。平均粒径在表1中列出。实施例6
重复实施例1的过程,只是用二水合硝酸铑代替三水合硝酸铜,按表1所示的量加入,且加热温度改为900℃。于是制备出在其表面偏聚金属铑的银粉,平均粒径在表1中列出。实施例7
将硝酸银水溶液与硝酸钯水溶液混合,银与钯重量比为9∶1。然后将三水合硝酸铜加入混合物以制备银和钯总浓度为50g/l且铜浓度为10ppm(对银钯总量而言为200ppm)的溶液。重复实施例1的过程,只是加热温度改为1200℃。于是制备出在其表面偏聚氧化铜的银钯合金粉末。平均粒径在表1中列出。对比例2
按实施例7的相同方法制备银-钯合金粉末,只是不加入三水合硝酸铜。平均粒径在表1中列出。
从表1可明显看出,根据本发明的方法所制备的金属粉末没有大量的团粒,因此作为用于厚膜浆料的粉末具有非常好的适用性。
表1
金属浓度 加入元素 以金属为基准 加热温度 粒径(μm)
金属粉末 (g/l) 计元素加入量 (℃) D50 D90
(ppm)实施例1 Ag 100 Cu 100 1000 1.78 3.38实施例2 Ag 100 Cu 200 1000 1.11 1.68实施例3 Ag 50 Cu 200 1100 0.99 1.58实施例4 Ag 50 Cu 1000 1100 0.79 1.28对比例1 Ag 100 无 - 1000 因聚集显著
而无法测量实施例5 Ag 100 Ni 20000 1000 1.49 2.16实施例6 Ag 100 Rh 500 900 0.83 1.80实施例7 Ag-Pd合金 50 Cu 200 1200 1.12 1.62
(Ag∶Pd=9∶1)对比例2 Ag-Pd合金 50 无 - 1200 1.32 1.93
(Ag∶Pd=9∶1)
根据本发明,在通过喷雾热解法制备金属粉末的过程中,形成的颗粒间的熔化能被有效地防止,并且可以制备出具有均匀粒径和良好分散性的金属粉末。
加入很少量的“金属或其类似物”就足以获得预定效果。并且不需要的“金属或其类似物”部分可以在粉末制备后通过洗涤被去除,使之含有极少量杂质,避免在将粉末用于厚膜浆料时对导电性,可焊性及类似性质产生不良影响。此外,在喷雾热解法中,起始溶液中的金属和半金属元素组成基本上与形成的颗粒的组成一致。这使得控制“金属或其类似物”的加入量较为容易。
除用于厚膜浆料外,根据本发明的方法制备的金属粉末亦可被用于装饰、催化剂、粉末冶金,磁性材料及其他用途。
Claims (5)
1、一种制备金属粉末的方法,包括以下步骤:将含有至少一种金属盐的溶液制成细小液滴,加热此液滴至高于金属盐分解温度的温度,其中将至少一种能热分解的化合物加到该溶液中,该化合物热分解后产生随着加热在加热温度下保持不熔化的金属、半金属或者金属或半金属氧化物,并且金属、半金属和氧化物中的至少一种热偏聚在金属粉末表面附近。
2、根据权利要求1的方法,该方法还包括消除至少部分偏聚的金属、半金属或其氧化物的步骤。
3、根据权利要求1的方法,其中的金属粉末为银粉或银合金粉末。
4、根据权利要求3的方法,其中的金属、半金属或其氧化物选自钌、铑、锇、铱、铂、铁、钴、镍、铜、锌、镉、碱土金属、硼、铝、硅、锗、铅、铋、稀土金属、钛、锆、钒、铌、钽、铬、钼、钨、锰及其氧化物。
5、根据权利要求1的方法,其中加入的化合物中的金属或半金属的总量以金属盐中金属的重量为基准计不少于50ppm。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102458727A (zh) * | 2009-04-24 | 2012-05-16 | 独立行政法人科学技术振兴机构 | 固溶体型合金微粒及其制造方法 |
CN102625862A (zh) * | 2009-05-12 | 2012-08-01 | 金属电解有限公司 | 用于还原固体原料的设备和方法 |
US9725815B2 (en) | 2010-11-18 | 2017-08-08 | Metalysis Limited | Electrolysis apparatus |
CN108526490A (zh) * | 2018-05-14 | 2018-09-14 | 六盘水中联工贸实业有限公司 | 一种用氯化铜或氯化亚铜生产金属铜粉的方法 |
CN109982798A (zh) * | 2016-11-16 | 2019-07-05 | 昭荣化学工业株式会社 | 金属粉末的在制造方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6679937B1 (en) * | 1997-02-24 | 2004-01-20 | Cabot Corporation | Copper powders methods for producing powders and devices fabricated from same |
US6268014B1 (en) * | 1997-10-02 | 2001-07-31 | Chris Eberspacher | Method for forming solar cell materials from particulars |
JP3928309B2 (ja) * | 1998-10-06 | 2007-06-13 | 昭栄化学工業株式会社 | ニッケル複合粒子、導体ペースト及びセラミック積層電子部品 |
SG94805A1 (en) * | 2000-05-02 | 2003-03-18 | Shoei Chemical Ind Co | Method for preparing metal powder |
KR100522783B1 (ko) * | 2001-05-14 | 2005-10-19 | 백한기 | 게르마늄 추출방법 및 그 장치 |
JP3772967B2 (ja) | 2001-05-30 | 2006-05-10 | Tdk株式会社 | 磁性金属粉末の製造方法 |
KR20030069000A (ko) * | 2002-02-19 | 2003-08-25 | 김고정 | 광천수로부터의 게르마늄 농축분말 추출방법 및 그 장치 |
KR100483169B1 (ko) * | 2002-05-24 | 2005-04-14 | 삼성코닝 주식회사 | 다성분계 금속산화물 분말의 제조방법 |
US7485390B2 (en) * | 2003-02-12 | 2009-02-03 | Symyx Technologies, Inc. | Combinatorial methods for preparing electrocatalysts |
CN1621182A (zh) * | 2003-11-25 | 2005-06-01 | 三星电子株式会社 | 含碳的镍粒子粉末及其制造方法 |
JP4978237B2 (ja) * | 2006-04-27 | 2012-07-18 | 昭栄化学工業株式会社 | ニッケル粉末の製造方法 |
JP5688895B2 (ja) | 2008-12-26 | 2015-03-25 | Dowaエレクトロニクス株式会社 | 微小銀粒子粉末と該粉末を使用した銀ペースト |
IN2013CH04500A (zh) | 2013-10-04 | 2015-04-10 | Kennametal India Ltd | |
JP7090511B2 (ja) * | 2017-09-29 | 2022-06-24 | Dowaエレクトロニクス株式会社 | 銀粉およびその製造方法 |
JP7447804B2 (ja) * | 2018-12-26 | 2024-03-12 | 昭栄化学工業株式会社 | 積層インダクタの内部電極形成用銀ペースト |
CN113226595B (zh) * | 2018-12-26 | 2023-07-28 | 昭荣化学工业株式会社 | 银浆 |
KR102144078B1 (ko) * | 2018-12-28 | 2020-08-12 | 충북대학교 산학협력단 | 재활용 초경소재 제조 방법 및 이를 이용하여 제조된 초경소재 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT967833B (it) * | 1972-09-25 | 1974-03-11 | Montedison Spa | Procedimento per preparare polveri di nichel submicroniche aventi for ma sferoidale |
GB1456369A (en) * | 1972-11-30 | 1976-11-24 | Stamicarbon | Catalyst preparation |
JPS58171502A (ja) * | 1982-04-02 | 1983-10-08 | Toyota Motor Corp | セラミック―金属複合微粉末体の製造方法 |
JPS6024301A (ja) * | 1983-07-18 | 1985-02-07 | Okuno Seiyaku Kogyo Kk | 金属被覆法 |
US4600604A (en) * | 1984-09-17 | 1986-07-15 | E. I. Du Pont De Nemours And Company | Metal oxide-coated copper powder |
US4748737A (en) * | 1985-11-27 | 1988-06-07 | Westinghouse Electric Corp. | Method of removing surface oxidation from particulates |
JPS6331522A (ja) * | 1986-07-25 | 1988-02-10 | Kao Corp | 吸湿剤 |
US4960647A (en) * | 1989-05-22 | 1990-10-02 | Johnson Matthey Inc. | Process for the reactive treating of palladium to form a protective coating and article |
JPH04202602A (ja) * | 1990-11-30 | 1992-07-23 | Mitsubishi Petrochem Co Ltd | 金属磁性粉の製造法 |
TW261554B (zh) * | 1992-10-05 | 1995-11-01 | Du Pont | |
TW256798B (zh) * | 1992-10-05 | 1995-09-11 | Du Pont | |
JP3064713B2 (ja) * | 1992-11-30 | 2000-07-12 | 昭栄化学工業株式会社 | 耐酸化性パラジウム粉末と耐酸化性パラジウム粉末の製造方法とこれを用いた厚膜導電性ペーストおよび積層セラミックコンデンサ |
US5429657A (en) * | 1994-01-05 | 1995-07-04 | E. I. Du Pont De Nemours And Company | Method for making silver-palladium alloy powders by aerosol decomposition |
-
1996
- 1996-09-25 JP JP27292496A patent/JP3277823B2/ja not_active Expired - Lifetime
-
1997
- 1997-09-23 TW TW086113815A patent/TW458829B/zh not_active IP Right Cessation
- 1997-09-23 SG SG1997003514A patent/SG55381A1/en unknown
- 1997-09-23 US US08/933,908 patent/US5964918A/en not_active Expired - Lifetime
- 1997-09-24 CA CA002216339A patent/CA2216339C/en not_active Expired - Lifetime
- 1997-09-24 MY MYPI97004439A patent/MY116977A/en unknown
- 1997-09-25 CN CN97121399A patent/CN1119215C/zh not_active Expired - Lifetime
- 1997-09-25 KR KR1019970048651A patent/KR100258007B1/ko not_active IP Right Cessation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102458727A (zh) * | 2009-04-24 | 2012-05-16 | 独立行政法人科学技术振兴机构 | 固溶体型合金微粒及其制造方法 |
CN102625862A (zh) * | 2009-05-12 | 2012-08-01 | 金属电解有限公司 | 用于还原固体原料的设备和方法 |
US9725815B2 (en) | 2010-11-18 | 2017-08-08 | Metalysis Limited | Electrolysis apparatus |
CN109982798A (zh) * | 2016-11-16 | 2019-07-05 | 昭荣化学工业株式会社 | 金属粉末的在制造方法 |
US11426791B2 (en) | 2016-11-16 | 2022-08-30 | Shoei Chemical Inc. | Method for producing metal powder |
US11458536B2 (en) | 2016-11-16 | 2022-10-04 | Shoei Chemical Inc. | Method for producing metal powder |
CN108526490A (zh) * | 2018-05-14 | 2018-09-14 | 六盘水中联工贸实业有限公司 | 一种用氯化铜或氯化亚铜生产金属铜粉的方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100258007B1 (ko) | 2000-06-01 |
KR19990037964A (ko) | 1999-06-05 |
SG55381A1 (en) | 1998-12-21 |
US5964918A (en) | 1999-10-12 |
MY116977A (en) | 2004-04-30 |
TW458829B (en) | 2001-10-11 |
CA2216339A1 (en) | 1998-03-25 |
JP3277823B2 (ja) | 2002-04-22 |
CN1119215C (zh) | 2003-08-27 |
JPH10102108A (ja) | 1998-04-21 |
CA2216339C (en) | 2001-11-13 |
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