CN118434250A - 热电元件及其制造方法 - Google Patents

热电元件及其制造方法 Download PDF

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Publication number
CN118434250A
CN118434250A CN202410510951.7A CN202410510951A CN118434250A CN 118434250 A CN118434250 A CN 118434250A CN 202410510951 A CN202410510951 A CN 202410510951A CN 118434250 A CN118434250 A CN 118434250A
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CN
China
Prior art keywords
resin layer
metal substrate
disposed
region
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202410510951.7A
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English (en)
Chinese (zh)
Inventor
卢名来
李钟旼
赵容祥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN118434250A publication Critical patent/CN118434250A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
CN202410510951.7A 2018-01-23 2019-01-22 热电元件及其制造方法 Pending CN118434250A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2018-0008423 2018-01-23
KR1020180008423A KR101981629B1 (ko) 2018-01-23 2018-01-23 열전소자 및 그의 제조 방법
CN201980009569.5A CN111630671B (zh) 2018-01-23 2019-01-22 热电元件及其制造方法
PCT/KR2019/000893 WO2019146990A1 (ko) 2018-01-23 2019-01-22 열전소자 및 그의 제조 방법

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980009569.5A Division CN111630671B (zh) 2018-01-23 2019-01-22 热电元件及其制造方法

Publications (1)

Publication Number Publication Date
CN118434250A true CN118434250A (zh) 2024-08-02

Family

ID=66680337

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202410510951.7A Pending CN118434250A (zh) 2018-01-23 2019-01-22 热电元件及其制造方法
CN201980009569.5A Active CN111630671B (zh) 2018-01-23 2019-01-22 热电元件及其制造方法

Family Applications After (1)

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CN201980009569.5A Active CN111630671B (zh) 2018-01-23 2019-01-22 热电元件及其制造方法

Country Status (6)

Country Link
US (1) US11417816B2 (https=)
EP (1) EP3745479B1 (https=)
JP (1) JP7344882B2 (https=)
KR (1) KR101981629B1 (https=)
CN (2) CN118434250A (https=)
WO (1) WO2019146990A1 (https=)

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KR102693403B1 (ko) * 2019-11-22 2024-08-09 엘지이노텍 주식회사 열전소자
RU2752307C1 (ru) * 2020-01-29 2021-07-26 Общество с ограниченной ответственностью "Термоэлектрические инновационные технологии" Термоэлектрический модуль
KR102765860B1 (ko) * 2020-04-01 2025-02-11 엘지이노텍 주식회사 열전소자
CN115605993A (zh) * 2020-05-14 2023-01-13 昭和电工材料株式会社（Jp） 底漆、带底漆层的基板、带底漆层的基板的制造方法、半导体装置及半导体装置的制造方法
CN113150599A (zh) * 2021-03-26 2021-07-23 杭州安誉科技有限公司 一种高导热性pcr反应管及其制备工艺

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KR102281065B1 (ko) * 2014-01-23 2021-07-23 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 냉각장치
JP2015196823A (ja) 2014-04-03 2015-11-09 三菱電機株式会社 熱硬化性樹脂組成物、熱伝導性樹脂シート及びその製造方法、並びにパワーモジュール
KR20160118747A (ko) * 2015-04-03 2016-10-12 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
KR20160129637A (ko) * 2015-04-30 2016-11-09 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 열전환장치
JP6607394B2 (ja) 2016-02-15 2019-11-20 株式会社タイセー ペルチェモジュール及びペルチェモジュール装置
KR101875902B1 (ko) * 2016-05-13 2018-07-06 티엠에스테크 주식회사 열전소자 및 열전소자 제조 방법

Also Published As

Publication number Publication date
JP2021511668A (ja) 2021-05-06
US20210091293A1 (en) 2021-03-25
CN111630671A (zh) 2020-09-04
US11417816B2 (en) 2022-08-16
JP7344882B2 (ja) 2023-09-14
EP3745479A4 (en) 2021-11-17
WO2019146990A1 (ko) 2019-08-01
EP3745479A1 (en) 2020-12-02
KR101981629B1 (ko) 2019-05-24
CN111630671B (zh) 2024-05-24
EP3745479B1 (en) 2025-09-24

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