CN118302839A - 制造包括具有改进的电性能的由碳化硅制成的工作层的半导体结构体的方法 - Google Patents

制造包括具有改进的电性能的由碳化硅制成的工作层的半导体结构体的方法 Download PDF

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Publication number
CN118302839A
CN118302839A CN202280039520.6A CN202280039520A CN118302839A CN 118302839 A CN118302839 A CN 118302839A CN 202280039520 A CN202280039520 A CN 202280039520A CN 118302839 A CN118302839 A CN 118302839A
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CN
China
Prior art keywords
donor substrate
front side
layer
working layer
semiconductor structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280039520.6A
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English (en)
Chinese (zh)
Inventor
亚历克西斯·德劳因
格维塔兹·戈丹
S·鲁契尔
W·施瓦岑贝格
J·维迪兹
E·罗兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of CN118302839A publication Critical patent/CN118302839A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN202280039520.6A 2021-06-03 2022-05-25 制造包括具有改进的电性能的由碳化硅制成的工作层的半导体结构体的方法 Pending CN118302839A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FRFR2105848 2021-06-03
FR2105848A FR3123759B1 (fr) 2021-06-03 2021-06-03 Procede de fabrication d’une structure semi-conductrice comprenant une couche utile en carbure de silicium aux proprietes electriques ameliorees
PCT/FR2022/051000 WO2022254131A1 (fr) 2021-06-03 2022-05-25 Procede de fabrication d'une structure semi-conductrice comprenant une couche utile en carbure de silicium aux proprietes electriques ameliorees

Publications (1)

Publication Number Publication Date
CN118302839A true CN118302839A (zh) 2024-07-05

Family

ID=77519224

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280039520.6A Pending CN118302839A (zh) 2021-06-03 2022-05-25 制造包括具有改进的电性能的由碳化硅制成的工作层的半导体结构体的方法

Country Status (9)

Country Link
US (1) US20240312831A1 (https=)
EP (1) EP4348701B1 (https=)
JP (1) JP2024521573A (https=)
KR (1) KR20240067221A (https=)
CN (1) CN118302839A (https=)
FR (1) FR3123759B1 (https=)
IL (1) IL309011A (https=)
TW (1) TW202303968A (https=)
WO (1) WO2022254131A1 (https=)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6387375B2 (ja) * 2016-07-19 2018-09-05 株式会社サイコックス 半導体基板
EP3584821B1 (en) * 2017-02-16 2025-03-12 Shin-Etsu Chemical Co., Ltd. Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element

Also Published As

Publication number Publication date
US20240312831A1 (en) 2024-09-19
WO2022254131A1 (fr) 2022-12-08
TW202303968A (zh) 2023-01-16
FR3123759A1 (fr) 2022-12-09
KR20240067221A (ko) 2024-05-16
EP4348701B1 (fr) 2025-06-25
JP2024521573A (ja) 2024-06-03
EP4348701C0 (fr) 2025-06-25
IL309011A (en) 2024-01-01
FR3123759B1 (fr) 2023-06-23
EP4348701A1 (fr) 2024-04-10

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