CN118202443A - p型杂质扩散组合物、使用其的太阳能电池的制造方法 - Google Patents

p型杂质扩散组合物、使用其的太阳能电池的制造方法 Download PDF

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Publication number
CN118202443A
CN118202443A CN202280070587.6A CN202280070587A CN118202443A CN 118202443 A CN118202443 A CN 118202443A CN 202280070587 A CN202280070587 A CN 202280070587A CN 118202443 A CN118202443 A CN 118202443A
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CN
China
Prior art keywords
impurity diffusion
diffusion composition
type impurity
film
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280070587.6A
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English (en)
Chinese (zh)
Inventor
田边修平
北田刚
弓场智之
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Toray Industries Inc
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Toray Industries Inc
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Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Publication of CN118202443A publication Critical patent/CN118202443A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN202280070587.6A 2021-11-05 2022-10-19 p型杂质扩散组合物、使用其的太阳能电池的制造方法 Pending CN118202443A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-180761 2021-11-05
JP2021180761 2021-11-05
PCT/JP2022/038911 WO2023079957A1 (ja) 2021-11-05 2022-10-19 p型不純物拡散組成物、それを用いた太陽電池の製造方法

Publications (1)

Publication Number Publication Date
CN118202443A true CN118202443A (zh) 2024-06-14

Family

ID=86240949

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280070587.6A Pending CN118202443A (zh) 2021-11-05 2022-10-19 p型杂质扩散组合物、使用其的太阳能电池的制造方法

Country Status (3)

Country Link
JP (1) JPWO2023079957A1 (https=)
CN (1) CN118202443A (https=)
WO (1) WO2023079957A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL207969A (https=) * 1955-06-28
US8545734B2 (en) * 2009-08-04 2013-10-01 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled group 13 stoichiometry
JP2012234990A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
EP2819149A4 (en) * 2012-02-23 2015-11-25 Hitachi Chemical Co Ltd COMPOSITION FOR FORMING AN N-LEADING DIFFUSION LAYER, METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE WITH AN N-LEADING DIFFUSION LAYER, AND METHOD FOR PRODUCING A SOLAR CELL ELEMENT
JP2018174276A (ja) * 2017-03-31 2018-11-08 日立化成株式会社 p型拡散層付き半導体基板の製造方法、p型拡散層付き半導体基板、太陽電池素子、及び太陽電池素子の製造方法
JP7459511B2 (ja) * 2018-12-07 2024-04-02 東レ株式会社 半導体素子の製造方法、および、太陽電池の製造方法

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JPWO2023079957A1 (https=) 2023-05-11
WO2023079957A1 (ja) 2023-05-11

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