CN118202443A - p型杂质扩散组合物、使用其的太阳能电池的制造方法 - Google Patents
p型杂质扩散组合物、使用其的太阳能电池的制造方法 Download PDFInfo
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- CN118202443A CN118202443A CN202280070587.6A CN202280070587A CN118202443A CN 118202443 A CN118202443 A CN 118202443A CN 202280070587 A CN202280070587 A CN 202280070587A CN 118202443 A CN118202443 A CN 118202443A
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- 229910052905 tridymite Inorganic materials 0.000 description 1
- AJSTXXYNEIHPMD-UHFFFAOYSA-N triethyl borate Chemical compound CCOB(OCC)OCC AJSTXXYNEIHPMD-UHFFFAOYSA-N 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- DTBRTYHFHGNZFX-UHFFFAOYSA-N trioctyl borate Chemical compound CCCCCCCCOB(OCCCCCCCC)OCCCCCCCC DTBRTYHFHGNZFX-UHFFFAOYSA-N 0.000 description 1
- MDCWDBMBZLORER-UHFFFAOYSA-N triphenyl borate Chemical compound C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 MDCWDBMBZLORER-UHFFFAOYSA-N 0.000 description 1
- LTEHWCSSIHAVOQ-UHFFFAOYSA-N tripropyl borate Chemical compound CCCOB(OCCC)OCCC LTEHWCSSIHAVOQ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical class [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021180761 | 2021-11-05 | ||
| JP2021-180761 | 2021-11-05 | ||
| PCT/JP2022/038911 WO2023079957A1 (ja) | 2021-11-05 | 2022-10-19 | ｐ型不純物拡散組成物、それを用いた太陽電池の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118202443A true CN118202443A (zh) | 2024-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280070587.6A Pending CN118202443A (zh) | 2021-11-05 | 2022-10-19 | p型杂质扩散组合物、使用其的太阳能电池的制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPWO2023079957A1 (enrdf_load_stackoverflow) |
| CN (1) | CN118202443A (enrdf_load_stackoverflow) |
| WO (1) | WO2023079957A1 (enrdf_load_stackoverflow) |
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| NL99619C (enrdf_load_stackoverflow) * | 1955-06-28 | |||
| US8585936B2 (en) * | 2009-08-04 | 2013-11-19 | Precursor Energetics, Inc. | Methods for photovoltaic absorbers with controlled group 11 stoichiometry |
| JP2012234990A (ja) * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | ｐ型拡散層形成組成物、ｐ型拡散層の製造方法、及び太陽電池素子の製造方法 |
| TWI603386B (zh) * | 2012-02-23 | 2017-10-21 | 日立化成股份有限公司 | ｎ型擴散層形成組成物、具有ｎ型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法 |
| JP2018174276A (ja) * | 2017-03-31 | 2018-11-08 | 日立化成株式会社 | ｐ型拡散層付き半導体基板の製造方法、ｐ型拡散層付き半導体基板、太陽電池素子、及び太陽電池素子の製造方法 |
| WO2020116340A1 (ja) * | 2018-12-07 | 2020-06-11 | 東レ株式会社 | 半導体素子の製造方法、および、太陽電池の製造方法 |
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2022
- 2022-10-19 CN CN202280070587.6A patent/CN118202443A/zh active Pending
- 2022-10-19 WO PCT/JP2022/038911 patent/WO2023079957A1/ja active Application Filing
- 2022-10-19 JP JP2022564208A patent/JPWO2023079957A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2023079957A1 (enrdf_load_stackoverflow) | 2023-05-11 |
| WO2023079957A1 (ja) | 2023-05-11 |
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