JPWO2023079957A1 - - Google Patents

Info

Publication number
JPWO2023079957A1
JPWO2023079957A1 JP2022564208A JP2022564208A JPWO2023079957A1 JP WO2023079957 A1 JPWO2023079957 A1 JP WO2023079957A1 JP 2022564208 A JP2022564208 A JP 2022564208A JP 2022564208 A JP2022564208 A JP 2022564208A JP WO2023079957 A1 JPWO2023079957 A1 JP WO2023079957A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022564208A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023079957A1 publication Critical patent/JPWO2023079957A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
JP2022564208A 2021-11-05 2022-10-19 Pending JPWO2023079957A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021180761 2021-11-05
PCT/JP2022/038911 WO2023079957A1 (ja) 2021-11-05 2022-10-19 p型不純物拡散組成物、それを用いた太陽電池の製造方法

Publications (1)

Publication Number Publication Date
JPWO2023079957A1 true JPWO2023079957A1 (enrdf_load_stackoverflow) 2023-05-11

Family

ID=86240949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022564208A Pending JPWO2023079957A1 (enrdf_load_stackoverflow) 2021-11-05 2022-10-19

Country Status (3)

Country Link
JP (1) JPWO2023079957A1 (enrdf_load_stackoverflow)
CN (1) CN118202443A (enrdf_load_stackoverflow)
WO (1) WO2023079957A1 (enrdf_load_stackoverflow)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99619C (enrdf_load_stackoverflow) * 1955-06-28
US8585936B2 (en) * 2009-08-04 2013-11-19 Precursor Energetics, Inc. Methods for photovoltaic absorbers with controlled group 11 stoichiometry
JP2012234990A (ja) * 2011-05-02 2012-11-29 Hitachi Chem Co Ltd p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法
TWI603386B (zh) * 2012-02-23 2017-10-21 日立化成股份有限公司 n型擴散層形成組成物、具有n型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法
JP2018174276A (ja) * 2017-03-31 2018-11-08 日立化成株式会社 p型拡散層付き半導体基板の製造方法、p型拡散層付き半導体基板、太陽電池素子、及び太陽電池素子の製造方法
WO2020116340A1 (ja) * 2018-12-07 2020-06-11 東レ株式会社 半導体素子の製造方法、および、太陽電池の製造方法

Also Published As

Publication number Publication date
WO2023079957A1 (ja) 2023-05-11
CN118202443A (zh) 2024-06-14

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