JPWO2023079957A1 - - Google Patents
Info
- Publication number
- JPWO2023079957A1 JPWO2023079957A1 JP2022564208A JP2022564208A JPWO2023079957A1 JP WO2023079957 A1 JPWO2023079957 A1 JP WO2023079957A1 JP 2022564208 A JP2022564208 A JP 2022564208A JP 2022564208 A JP2022564208 A JP 2022564208A JP WO2023079957 A1 JPWO2023079957 A1 JP WO2023079957A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021180761 | 2021-11-05 | ||
PCT/JP2022/038911 WO2023079957A1 (ja) | 2021-11-05 | 2022-10-19 | p型不純物拡散組成物、それを用いた太陽電池の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2023079957A1 true JPWO2023079957A1 (enrdf_load_stackoverflow) | 2023-05-11 |
Family
ID=86240949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022564208A Pending JPWO2023079957A1 (enrdf_load_stackoverflow) | 2021-11-05 | 2022-10-19 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2023079957A1 (enrdf_load_stackoverflow) |
CN (1) | CN118202443A (enrdf_load_stackoverflow) |
WO (1) | WO2023079957A1 (enrdf_load_stackoverflow) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL99619C (enrdf_load_stackoverflow) * | 1955-06-28 | |||
US8585936B2 (en) * | 2009-08-04 | 2013-11-19 | Precursor Energetics, Inc. | Methods for photovoltaic absorbers with controlled group 11 stoichiometry |
JP2012234990A (ja) * | 2011-05-02 | 2012-11-29 | Hitachi Chem Co Ltd | p型拡散層形成組成物、p型拡散層の製造方法、及び太陽電池素子の製造方法 |
TWI603386B (zh) * | 2012-02-23 | 2017-10-21 | 日立化成股份有限公司 | n型擴散層形成組成物、具有n型擴散層的半導體基板的製造方法以及太陽電池元件的製造方法 |
JP2018174276A (ja) * | 2017-03-31 | 2018-11-08 | 日立化成株式会社 | p型拡散層付き半導体基板の製造方法、p型拡散層付き半導体基板、太陽電池素子、及び太陽電池素子の製造方法 |
WO2020116340A1 (ja) * | 2018-12-07 | 2020-06-11 | 東レ株式会社 | 半導体素子の製造方法、および、太陽電池の製造方法 |
-
2022
- 2022-10-19 CN CN202280070587.6A patent/CN118202443A/zh active Pending
- 2022-10-19 WO PCT/JP2022/038911 patent/WO2023079957A1/ja active Application Filing
- 2022-10-19 JP JP2022564208A patent/JPWO2023079957A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2023079957A1 (ja) | 2023-05-11 |
CN118202443A (zh) | 2024-06-14 |