CN118160065A - 接合型半导体晶圆的制造方法 - Google Patents

接合型半导体晶圆的制造方法 Download PDF

Info

Publication number
CN118160065A
CN118160065A CN202280072026.XA CN202280072026A CN118160065A CN 118160065 A CN118160065 A CN 118160065A CN 202280072026 A CN202280072026 A CN 202280072026A CN 118160065 A CN118160065 A CN 118160065A
Authority
CN
China
Prior art keywords
layer
bonded
manufacturing
semiconductor wafer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280072026.XA
Other languages
English (en)
Chinese (zh)
Inventor
石崎顺也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN118160065A publication Critical patent/CN118160065A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
CN202280072026.XA 2021-10-28 2022-10-14 接合型半导体晶圆的制造方法 Pending CN118160065A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021176922A JP7556342B2 (ja) 2021-10-28 2021-10-28 接合型半導体ウェーハの製造方法
JP2021-176922 2021-10-28
PCT/JP2022/038473 WO2023074423A1 (ja) 2021-10-28 2022-10-14 接合型半導体ウェーハの製造方法

Publications (1)

Publication Number Publication Date
CN118160065A true CN118160065A (zh) 2024-06-07

Family

ID=86157699

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280072026.XA Pending CN118160065A (zh) 2021-10-28 2022-10-14 接合型半导体晶圆的制造方法

Country Status (5)

Country Link
EP (1) EP4425531A4 (https=)
JP (1) JP7556342B2 (https=)
CN (1) CN118160065A (https=)
TW (1) TW202326807A (https=)
WO (1) WO2023074423A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119421580A (zh) * 2024-12-27 2025-02-11 西湖烟山科技(杭州)有限公司 重构晶圆、晶圆重构方法和显示面板的制备方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7235153B2 (ja) * 2017-12-29 2023-03-08 株式会社三洋物産 遊技機
JP7235154B2 (ja) * 2018-02-15 2023-03-08 株式会社三洋物産 遊技機
JP7231076B2 (ja) * 2018-03-08 2023-03-01 株式会社三洋物産 遊技機
JP2020130466A (ja) * 2019-02-15 2020-08-31 株式会社三洋物産 遊技機
JP7234741B2 (ja) * 2019-03-28 2023-03-08 株式会社三洋物産 遊技機
JP7234740B2 (ja) * 2019-03-28 2023-03-08 株式会社三洋物産 遊技機
JP7234760B2 (ja) * 2019-04-11 2023-03-08 株式会社三洋物産 遊技機
JP7234761B2 (ja) * 2019-04-11 2023-03-08 株式会社三洋物産 遊技機
JP2023063369A (ja) * 2022-01-07 2023-05-09 株式会社三洋物産 遊技機
JP2023053387A (ja) * 2022-02-04 2023-04-12 株式会社三洋物産 遊技機
JP2023060270A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
JP2023060269A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5770542B2 (ja) * 2011-06-14 2015-08-26 キヤノン・コンポーネンツ株式会社 半導体装置の製造方法
KR20150038335A (ko) * 2012-07-30 2015-04-08 스미또모 가가꾸 가부시키가이샤 복합 기판의 제조 방법 및 반도체 결정층 형성 기판의 제조 방법
US9035279B2 (en) * 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
JP2021027301A (ja) 2019-08-08 2021-02-22 信越半導体株式会社 半導体基板の仮接合方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119421580A (zh) * 2024-12-27 2025-02-11 西湖烟山科技(杭州)有限公司 重构晶圆、晶圆重构方法和显示面板的制备方法

Also Published As

Publication number Publication date
EP4425531A4 (en) 2025-11-05
WO2023074423A1 (ja) 2023-05-04
JP7556342B2 (ja) 2024-09-26
JP2023066285A (ja) 2023-05-15
EP4425531A1 (en) 2024-09-04
TW202326807A (zh) 2023-07-01

Similar Documents

Publication Publication Date Title
CN118160065A (zh) 接合型半导体晶圆的制造方法
KR101065990B1 (ko) 발광 소자의 제조 방법
KR102943720B1 (ko) 가공된 기판 상의 와이드 밴드 갭 디바이스 집적 회로 아키텍처
TWI894292B (zh) 接合型半導體元件及接合型半導體元件之製造方法
US20250015225A1 (en) Method for manufacturing bonded semiconductor wafer
CN107624197A (zh) 通过预图案化台面进行的减轻应变的外延剥离
JP7272412B1 (ja) 接合型半導体ウェーハの製造方法
CN102456775A (zh) 发光元件及其制法
CN103280425B (zh) 一种具有隔离层的复合衬底及其制造方法
TW202414515A (zh) 微型led用接合型晶圓的製造方法
CN111192820A (zh) 自对准竖直固态装置制造和集成方法
JP7367743B2 (ja) 接合型半導体ウェーハの製造方法
KR102152195B1 (ko) 반도체 소자 및 그 제조 방법
CN118476042A (zh) 具有微型led结构体的晶圆、具有微型led结构体的晶圆的制造方法及具有微型led结构体的接合型半导体晶圆的制造方法
CN104798182A (zh) 肖特基势垒二极管及其制造方法
KR102629307B1 (ko) 질화물 반도체 소자의 제조방법
TW202247263A (zh) 化合物半導體接合基板的製造方法、及化合物半導體接合基板

Legal Events

Date Code Title Description
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination