TW202326807A - 接合型半導體晶圓的製造方法 - Google Patents

接合型半導體晶圓的製造方法 Download PDF

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Publication number
TW202326807A
TW202326807A TW111139587A TW111139587A TW202326807A TW 202326807 A TW202326807 A TW 202326807A TW 111139587 A TW111139587 A TW 111139587A TW 111139587 A TW111139587 A TW 111139587A TW 202326807 A TW202326807 A TW 202326807A
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TW
Taiwan
Prior art keywords
layer
semiconductor wafer
manufacturing
substrate
bonded
Prior art date
Application number
TW111139587A
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English (en)
Chinese (zh)
Inventor
石崎順也
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日商信越半導體股份有限公司
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Application filed by 日商信越半導體股份有限公司 filed Critical 日商信越半導體股份有限公司
Publication of TW202326807A publication Critical patent/TW202326807A/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11Separation of active layers from substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019Removal of at least a part of a substrate on which semiconductor layers have been formed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/032Manufacture or treatment of electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/034Manufacture or treatment of coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings

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  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
TW111139587A 2021-10-28 2022-10-19 接合型半導體晶圓的製造方法 TW202326807A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021176922A JP7556342B2 (ja) 2021-10-28 2021-10-28 接合型半導体ウェーハの製造方法
JP2021-176922 2021-10-28

Publications (1)

Publication Number Publication Date
TW202326807A true TW202326807A (zh) 2023-07-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW111139587A TW202326807A (zh) 2021-10-28 2022-10-19 接合型半導體晶圓的製造方法

Country Status (5)

Country Link
EP (1) EP4425531A4 (https=)
JP (1) JP7556342B2 (https=)
CN (1) CN118160065A (https=)
TW (1) TW202326807A (https=)
WO (1) WO2023074423A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7235153B2 (ja) * 2017-12-29 2023-03-08 株式会社三洋物産 遊技機
JP7235154B2 (ja) * 2018-02-15 2023-03-08 株式会社三洋物産 遊技機
JP7231076B2 (ja) * 2018-03-08 2023-03-01 株式会社三洋物産 遊技機
JP2020130466A (ja) * 2019-02-15 2020-08-31 株式会社三洋物産 遊技機
JP7234741B2 (ja) * 2019-03-28 2023-03-08 株式会社三洋物産 遊技機
JP7234740B2 (ja) * 2019-03-28 2023-03-08 株式会社三洋物産 遊技機
JP7234760B2 (ja) * 2019-04-11 2023-03-08 株式会社三洋物産 遊技機
JP7234761B2 (ja) * 2019-04-11 2023-03-08 株式会社三洋物産 遊技機
JP2023063369A (ja) * 2022-01-07 2023-05-09 株式会社三洋物産 遊技機
JP2023053387A (ja) * 2022-02-04 2023-04-12 株式会社三洋物産 遊技機
JP2023060270A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
JP2023060269A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
CN119421580B (zh) * 2024-12-27 2025-05-20 西湖烟山科技(杭州)有限公司 重构晶圆、晶圆重构方法和显示面板的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5770542B2 (ja) * 2011-06-14 2015-08-26 キヤノン・コンポーネンツ株式会社 半導体装置の製造方法
KR20150038335A (ko) * 2012-07-30 2015-04-08 스미또모 가가꾸 가부시키가이샤 복합 기판의 제조 방법 및 반도체 결정층 형성 기판의 제조 방법
US9035279B2 (en) * 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
JP2021027301A (ja) 2019-08-08 2021-02-22 信越半導体株式会社 半導体基板の仮接合方法

Also Published As

Publication number Publication date
EP4425531A4 (en) 2025-11-05
WO2023074423A1 (ja) 2023-05-04
JP7556342B2 (ja) 2024-09-26
CN118160065A (zh) 2024-06-07
JP2023066285A (ja) 2023-05-15
EP4425531A1 (en) 2024-09-04

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