CN118044349A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
- Publication number
- CN118044349A CN118044349A CN202280065644.1A CN202280065644A CN118044349A CN 118044349 A CN118044349 A CN 118044349A CN 202280065644 A CN202280065644 A CN 202280065644A CN 118044349 A CN118044349 A CN 118044349A
- Authority
- CN
- China
- Prior art keywords
- power supply
- supply line
- line
- power
- power line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/18—Peripheral circuit regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163261847P | 2021-09-30 | 2021-09-30 | |
| US63/261,847 | 2021-09-30 | ||
| PCT/JP2022/036488 WO2023054602A1 (ja) | 2021-09-30 | 2022-09-29 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118044349A true CN118044349A (zh) | 2024-05-14 |
Family
ID=85782921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202280065644.1A Pending CN118044349A (zh) | 2021-09-30 | 2022-09-29 | 半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240224492A1 (https=) |
| JP (1) | JPWO2023054602A1 (https=) |
| CN (1) | CN118044349A (https=) |
| WO (1) | WO2023054602A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN121312281A (zh) * | 2023-06-09 | 2026-01-09 | 株式会社索思未来 | 半导体装置 |
| JPWO2024252660A1 (https=) * | 2023-06-09 | 2024-12-12 | ||
| US20250118632A1 (en) * | 2023-10-10 | 2025-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices with switchable power delivery paths |
| WO2025169464A1 (ja) * | 2024-02-09 | 2025-08-14 | 株式会社ソシオネクスト | 半導体装置 |
| WO2025169463A1 (ja) * | 2024-02-09 | 2025-08-14 | 株式会社ソシオネクスト | 半導体装置 |
| WO2026074865A1 (ja) * | 2024-10-04 | 2026-04-09 | 株式会社ソシオネクスト | 半導体集積回路装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5198785B2 (ja) * | 2007-03-30 | 2013-05-15 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2016035966A (ja) * | 2014-08-01 | 2016-03-17 | 株式会社東芝 | 半導体集積回路装置 |
| JP6672626B2 (ja) * | 2015-07-22 | 2020-03-25 | 富士通株式会社 | 半導体装置および半導体装置の制御方法 |
| CN112753098B (zh) * | 2018-09-28 | 2024-10-18 | 株式会社索思未来 | 半导体装置 |
-
2022
- 2022-09-29 JP JP2023551859A patent/JPWO2023054602A1/ja active Pending
- 2022-09-29 CN CN202280065644.1A patent/CN118044349A/zh active Pending
- 2022-09-29 WO PCT/JP2022/036488 patent/WO2023054602A1/ja not_active Ceased
-
2024
- 2024-03-15 US US18/606,421 patent/US20240224492A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023054602A1 (ja) | 2023-04-06 |
| JPWO2023054602A1 (https=) | 2023-04-06 |
| US20240224492A1 (en) | 2024-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |