CN1179404C - 基板在晶片上的封装方法 - Google Patents

基板在晶片上的封装方法 Download PDF

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CN1179404C
CN1179404C CNB011422440A CN01142244A CN1179404C CN 1179404 C CN1179404 C CN 1179404C CN B011422440 A CNB011422440 A CN B011422440A CN 01142244 A CN01142244 A CN 01142244A CN 1179404 C CN1179404 C CN 1179404C
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wafer
substrate
solvent
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dry film
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�������ֿ�
林俊宏
钟卓良
黄国樑
李耀荣
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Chipmos Technologies Inc
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Abstract

一种基板在晶片上的封装方法，是在基板的上表面披覆一层两阶段特性的具有溶剂的热固性混合物，然后，加热基板，以除去溶剂，使热固性混合物形成无溶剂的粘着干膜，避免在粘晶时覆盖晶片的焊垫，并有利于基板在晶片上封装的加工。

Description

基板在晶片上的封装方法
技术领域
本发明是有关于一种基板在晶片上(Substrate-On-Chip，SOC)的封装方法，特别是有关于一种基板在晶片上的封装方法中的粘晶步骤。
背景技术
众所周知，所谓的「基板在晶片上的封装」即为Substrate-On-Chip封装，简称为SOC封装，属于一种常用的半导体封装结构，其是以一具有窗口的电路基板粘贴于一晶片，并以多数个金属焊线穿过该窗口，连接电路基板与晶片，该电路基板并形成有多数个矩阵排列的焊球。
在美国专利案第6,190,943号「晶片尺寸封装方法」中，揭示一种SOC封装结构及其封装方法，如图1所示，该SOC封装结构20是包含有一基板22、一晶片24及多数个焊球44，该基板22是具有一粘固晶片24的上表面30、一用以焊接焊球44的下表面38以及贯穿上表面30与下表面38的通孔34，其中晶片24是以热塑性粘着层28粘固于基板22的上表面30，由于基板22的通孔34是裸露在晶片24的主动面26(active surface)中间的焊垫36，使得金属焊线32可穿过通孔34，以电性连接晶片24的焊垫36与基板22的导接垫41，该导接垫41是由在基板22下表面38的导电层40所构成，并在通孔34处以及晶片24的周边形成有封胶层42，其是为一种绝缘性及热固性的环氧树脂硅氧填充材料。
上述美国专利案的封装方法，如图2所示，包含以下步骤：
(a)提供一基板22，在该基板22的上表面30具有至少一粘晶区域302，其包含上述的通孔34；
(b)将液态的热塑性粘着层28网版印刷(stenciling)于粘晶区域302；
(c)粘贴晶片24至粘晶区域302，使得晶片24的主动面26接触热塑性粘着层28，且在主动面26的焊垫36的位置对应于通孔34；
(d)在预定的温度、压力及时间之下，施压加热基板22与晶片24；
(e)以打线(wire-bonding)将金属焊线32经由通孔34连接基板22的导接垫41与晶片24的焊垫36；
(f)提供一封胶层42于该通孔34及晶片24的周边；
(g)在基板22的下表面38接植多数个呈矩阵排列的焊球44。
通过上述的步骤以制备SOC封装结构20，其主要缺陷在于：
1、在(b)步骤中的热塑性粘着层28是为一种无溶剂、弹性且半透明的硅橡胶(silicone rubber)，由于未粘合前的热塑性粘着层28是呈液态，在(d)步骤中的施压加热容易使得液态热塑性粘着层28溢流，并覆盖晶片24的焊垫36，而导致封装失败，故这种基板在晶片上(SOC)的封装方法的优良率较低；
2、此外，另一不便之处为：在(b)步骤印刷上液态热塑性粘着层28之后，无法将多个基板22堆叠，以供搬运或储放，必须尽速粘固上晶片24，否则基板22会受到污染，以及基板22间会不当粘着，造成加工的困难。
发明内容
本发明的主要目的在于提供一种基板在晶片上的封装方法，利用一种两阶段特性(two stage)的具有溶剂的热固性混合物，以粘贴晶片，在印刷于基板及干燥后，在基板表面形成一不具粘性的热固性粘着干膜，使得在加热施压时，热固性粘着干膜不易覆盖晶片的焊垫，达到增加SOC封装的优良率的目的。
本发明的另一目的在于提供一种基板在晶片上的封装方法，利用一种两阶段特性(two stage)的具有溶剂的热固性混合物粘贴晶片，在印刷于基板及干燥后，在基板表面形成一不具粘性的热固性粘着干膜，使得具有热固性粘着干膜的基板可堆叠搬运或储放，达到有利于后续SOC封装的加工的目的。
本发明的目的是这样实现的：一种基板在晶片上的封装方法，其特征是：它依次包括如下步骤：
(a)提供一基板，该基板具有一上表面、一下表面及连通上下表面的通孔；
(b)在该基板的上表面形成一层两阶段特性的具有溶剂的热固性混合物；
(c)去除溶剂，使该热固性混合物形成无溶剂的粘着干膜；
(d)提供至少一晶片，该晶片具有一主动面及多数个在主动面的焊垫，其中该晶片的主动面是接触该基板的上表面的粘着干膜，该晶片的焊垫的位置对应于该基板的通孔；
(e)施压加热基板与晶片，使所述无溶剂的粘着干膜粘合晶片与基板；
(f)经由通孔打线电性连接晶片的焊垫至基板；
(g)形成一封胶层于该基板的通孔处。
该步骤(b)是以网版印刷方法形成一层热固性混合物。该步骤(b)是以印刷、喷涂、旋涂或浸染方法形成一层热固性混合物。该步骤(g)之后，另包含有接植多数个焊球于该基板的下表面。该步骤(g)是以压模方式形成该封胶层。该封胶层是密封晶片。该步骤(c)是以加热或真空干燥方式去除溶剂。该步骤(e)的施压加热的温度是高于该步骤(c)去除溶剂的温度。
另一种基板在晶片上的封装方法，其特征是：它依次包括如下步骤：
(a)提供一基板，该基板具有一上表面、一下表面及连通上下表面的通孔；
(b)在基板的上表面形成一层两阶段特性的具有溶剂的热固性混合物；
(c)去除溶剂，使热固性混合物形成无溶剂的粘着干膜；
(d)提供至少一晶片，该晶片具有一主动面及多数个在主动面的焊垫，该晶片的主动面是接触该基板的上表面的粘着干膜，该晶片的焊垫的位置对应于基板的通孔；
(e)施压加热基板与晶片，使所述无溶剂的粘着干膜粘合晶片与基板；
(f)经由通孔打线电性连接晶片的焊垫至基板；
(g)压模形成一封胶层于该基板的通孔处；
(h)加热固化该封胶层与无溶剂的粘着干膜。
下面结合较佳实施例和附图进一步说明。
附图说明
图1是传统基板在晶片上封装结构的剖面示意图；
图2是传统基板在晶片上封装结构的制造流程示意图；
图3是本发明的基板在晶片上封装方法的制造流程示意图。
具体实施方式
参阅图3所示，本发明的基板在晶片上(SOC)的封装方法依次包括如下步骤：
首先提供一基板110，该基板110具有一上表面111、一下表面112及连通上下表面111、112的通孔113，在本实施例中，基板110是一种印刷电路板，如玻璃纤维强化树脂，在基板110的下表面112形成有一电路图案层(circuit pattern)(图未示)，如导接垫、焊球垫以及连接导接垫与焊球垫的金属线路；
之后，在基板110的上表面111网版印刷上一层两阶段特性(two stage)的具有溶剂的热固性混合物130(thermosetting mixture)，该两阶段粘着的热固性混合物130是包含有热固性树脂，如聚亚酰胺(polyimide)、聚喹啉(polyquinolin)或苯环丁烯(benzocyclobutene)，以及能够溶解上述热固性树脂的溶剂，如丁内脂(butyrolactone)与环戊酮(cyclopentanone)的混合溶剂或是1，3，5-三甲基苯(mesitylene)，由于该两阶段的热固性混合物130在涂施时。是具有A阶段A的特性呈液态，使得易于涂施附着，故除了网版印刷方法之外，还可以印刷(painting)、喷涂(spraying)、旋涂(spinning)或浸染(dipping)等方式，形成于基板110的上表面111；然后，加热基板110至一适当温度，约90-150℃，以除去溶剂，使热固性混合物130形成无溶剂的粘着干膜131，较佳地，另执行一真空干燥加热，以完全去除溶剂，此时，在基板110的粘着干膜131是具有B阶段的特性，即在室温下成为不具有粘性(Tg为40℃)的胶膜，可供堆叠搬运或储放，有利于后续SOC封装的加工；
接着，提供至少一晶片120，该晶片120具有一主动面121(active surface)及多数个在主动面121的焊垫122，其中晶片120的主动面121是接触基板110的上表面111的粘着干膜131，且晶片120的焊垫122的位置对应于基板110的通孔113，在本实施例中，焊垫122是位于晶片120主动面121的中间部位；
再后，施压加热基板110与晶片120，约在180℃，并在适当压力下维持数秒钟之久，使得上述无溶剂的粘着干膜131能机械性粘合晶片120与基板110，但不需要完全固化，由于在热粘合晶片120与基板110的步骤时，粘着干膜131并不具有高流动性，不会有受挤压流至晶片120的焊垫122的现象；
尔后，经由通孔113以金属焊线140打线电性连接晶片120的焊垫122至基板110；
最后，形成一热固性封胶材150于该基板110的通孔113处，在本实施例中，其是以压模(molding)方式形成该封胶材150，该封胶材150并密封晶片120，较佳地，在压模过程后随同封胶材150的加热固化约要200℃维持数小时，而固化该粘着干膜131，由于压模压力可排除原本可能潜藏在未固化前粘着干膜131的空隙，以增进封装的优良率，如有需要，并接植多数个焊球160于基板110的下表面120，并在切割分离后，构成多数个SOC封装结构100。
因此，本发明是运用两阶段特性的具有溶剂的热固性混合物130，于基板在晶片上(SOC)的封装方法中，作为基板110对晶片120的粘合材料，避免了液态粘胶覆盖晶片120的焊垫122的缺点，以增加SOC封装的优良率，同时已形成热固性粘着干膜131的基板110，可供堆叠搬运或储放，有利于后续SOC封装的加工。
以上所述为较佳的实施例，任何熟知此项技艺者，在不脱离本发明的精神和范围内所作的任何变化与修改，均属于本发明的保护范围。

Claims (7)

1、一种基板在晶片上的封装方法，其特征是：它依次包括如下步骤：
(a)提供一基板，该基板具有一上表面、一下表面及连通上下表面的通孔；
(b)在基板的上表面形成一层两阶段特性的具有溶剂的热固性混合物；
(c)去除溶剂，使热固性混合物形成无溶剂的粘着干膜；
(d)提供至少一晶片，该晶片具有一主动面及多数个在主动面的焊垫，该晶片的主动面是接触该基板的上表面的粘着干膜，该晶片的焊垫的位置对应于基板的通孔；
(e)施压加热基板与晶片，使所述无溶剂的粘着干膜粘合晶片与基板；
(f)经由通孔打线电性连接晶片的焊垫至基板；
(g)压模形成一封胶层于该基板的通孔处，同时加热固化该封胶层与无溶剂的粘着干膜。
2、根据权利要求1所述的基板在晶片上的封装方法，其特征是：该步骤(b)是以网版印刷方法形成一层热固性混合物。
3、根据权利要求1所述的基板在晶片上的封装方法，其特征是：该步骤(b)是以印刷、喷涂、旋涂或浸染方法形成一层热固性混合物。
4、根据权利要求1所述的基板在晶片上的封装方法，其特征是：该步骤(h)之后，另包含有接植多数个焊球于基板的下表面。
5、根据权利要求1所述的基板在晶片上的封装方法，其特征是：该封胶层是密封晶片。
6、根据权利要求1所述的基板在晶片上的封装方法，其特征是：该步骤(c)是以加热或真空干燥方式去除溶剂。
7、根据权利要求1所述的基板在晶片上的封装方法，其特征是：该步骤(h)的加热固化的温度是高于步骤(c)去除溶剂的温度。
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CN101477956B (zh) * 2008-01-04 2012-05-16 南茂科技股份有限公司 小片重新配置的封装结构及封装方法
CN101609824B (zh) * 2008-06-18 2011-01-12 力成科技股份有限公司 半导体封装的通用型基板及半导体封装构造

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