CN117897521A - 氮化镓晶体、氮化镓基板及氮化镓晶体的制造方法 - Google Patents

氮化镓晶体、氮化镓基板及氮化镓晶体的制造方法 Download PDF

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Publication number
CN117897521A
CN117897521A CN202280057716.8A CN202280057716A CN117897521A CN 117897521 A CN117897521 A CN 117897521A CN 202280057716 A CN202280057716 A CN 202280057716A CN 117897521 A CN117897521 A CN 117897521A
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CN
China
Prior art keywords
main surface
crystal
line segment
less
gallium nitride
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Pending
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CN202280057716.8A
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English (en)
Chinese (zh)
Inventor
三川丰
栗本浩平
包全喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Japan Steel Works Ltd
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Mitsubishi Chemical Corp
Japan Steel Works Ltd
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Application filed by Mitsubishi Chemical Corp, Japan Steel Works Ltd filed Critical Mitsubishi Chemical Corp
Publication of CN117897521A publication Critical patent/CN117897521A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202280057716.8A 2021-08-25 2022-08-23 氮化镓晶体、氮化镓基板及氮化镓晶体的制造方法 Pending CN117897521A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021137526 2021-08-25
JP2021-137526 2021-08-25
PCT/JP2022/031744 WO2023027077A1 (ja) 2021-08-25 2022-08-23 窒化ガリウム結晶、窒化ガリウム基板及び窒化ガリウム結晶の製造方法

Publications (1)

Publication Number Publication Date
CN117897521A true CN117897521A (zh) 2024-04-16

Family

ID=85322855

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280057716.8A Pending CN117897521A (zh) 2021-08-25 2022-08-23 氮化镓晶体、氮化镓基板及氮化镓晶体的制造方法

Country Status (7)

Country Link
US (1) US20240191395A1 (https=)
EP (1) EP4394094A4 (https=)
JP (1) JPWO2023027077A1 (https=)
KR (1) KR20240051191A (https=)
CN (1) CN117897521A (https=)
TW (1) TW202314971A (https=)
WO (1) WO2023027077A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7195431B2 (ja) * 2019-06-27 2022-12-23 三菱電機株式会社 光半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4229624B2 (ja) 2002-03-19 2009-02-25 三菱化学株式会社 窒化物単結晶の製造方法
JP4433696B2 (ja) 2003-06-17 2010-03-17 三菱化学株式会社 窒化物結晶の製造方法
WO2009149299A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
US9589792B2 (en) * 2012-11-26 2017-03-07 Soraa, Inc. High quality group-III metal nitride crystals, methods of making, and methods of use
WO2010079814A1 (ja) 2009-01-08 2010-07-15 三菱化学株式会社 窒化物結晶の製造方法、窒化物結晶およびその製造装置
EP2660365B1 (en) * 2010-12-27 2023-03-22 Mitsubishi Chemical Corporation Method for producing gan semiconductor crystal, and apparatus for crystal production
JP2013038116A (ja) * 2011-08-04 2013-02-21 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板の製造方法
JP5733120B2 (ja) * 2011-09-09 2015-06-10 住友電気工業株式会社 ソーワイヤおよびそれを用いたｉｉｉ族窒化物結晶基板の製造方法
JP6024335B2 (ja) * 2012-09-21 2016-11-16 三菱化学株式会社 周期表第１３属金属窒化物半導体基板の製造方法
WO2014129544A1 (ja) * 2013-02-22 2014-08-28 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
WO2015107813A1 (ja) * 2014-01-17 2015-07-23 三菱化学株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
JP2015178438A (ja) * 2014-02-28 2015-10-08 三菱化学株式会社 窒化ガリウム自立基板、窒化ガリウム結晶及び窒化ガリウム自立基板の生産方法
KR102426231B1 (ko) * 2016-08-08 2022-07-29 미쯔비시 케미컬 주식회사 도전성 C면 GaN 기판

Also Published As

Publication number Publication date
JPWO2023027077A1 (https=) 2023-03-02
TW202314971A (zh) 2023-04-01
EP4394094A4 (en) 2025-08-20
US20240191395A1 (en) 2024-06-13
EP4394094A1 (en) 2024-07-03
KR20240051191A (ko) 2024-04-19
WO2023027077A1 (ja) 2023-03-02

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