JPWO2023027077A1 - - Google Patents
Info
- Publication number
- JPWO2023027077A1 JPWO2023027077A1 JP2023543934A JP2023543934A JPWO2023027077A1 JP WO2023027077 A1 JPWO2023027077 A1 JP WO2023027077A1 JP 2023543934 A JP2023543934 A JP 2023543934A JP 2023543934 A JP2023543934 A JP 2023543934A JP WO2023027077 A1 JPWO2023027077 A1 JP WO2023027077A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021137526 | 2021-08-25 | ||
| PCT/JP2022/031744 WO2023027077A1 (ja) | 2021-08-25 | 2022-08-23 | 窒化ガリウム結晶、窒化ガリウム基板及び窒化ガリウム結晶の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023027077A1 true JPWO2023027077A1 (https=) | 2023-03-02 |
Family
ID=85322855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023543934A Pending JPWO2023027077A1 (https=) | 2021-08-25 | 2022-08-23 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240191395A1 (https=) |
| EP (1) | EP4394094A4 (https=) |
| JP (1) | JPWO2023027077A1 (https=) |
| KR (1) | KR20240051191A (https=) |
| CN (1) | CN117897521A (https=) |
| TW (1) | TW202314971A (https=) |
| WO (1) | WO2023027077A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7195431B2 (ja) * | 2019-06-27 | 2022-12-23 | 三菱電機株式会社 | 光半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4229624B2 (ja) | 2002-03-19 | 2009-02-25 | 三菱化学株式会社 | 窒化物単結晶の製造方法 |
| JP4433696B2 (ja) | 2003-06-17 | 2010-03-17 | 三菱化学株式会社 | 窒化物結晶の製造方法 |
| WO2009149299A1 (en) * | 2008-06-04 | 2009-12-10 | Sixpoint Materials | Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth |
| US9589792B2 (en) * | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
| WO2010079814A1 (ja) | 2009-01-08 | 2010-07-15 | 三菱化学株式会社 | 窒化物結晶の製造方法、窒化物結晶およびその製造装置 |
| EP2660365B1 (en) * | 2010-12-27 | 2023-03-22 | Mitsubishi Chemical Corporation | Method for producing gan semiconductor crystal, and apparatus for crystal production |
| JP2013038116A (ja) * | 2011-08-04 | 2013-02-21 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物結晶基板の製造方法 |
| JP5733120B2 (ja) * | 2011-09-09 | 2015-06-10 | 住友電気工業株式会社 | ソーワイヤおよびそれを用いたｉｉｉ族窒化物結晶基板の製造方法 |
| JP6024335B2 (ja) * | 2012-09-21 | 2016-11-16 | 三菱化学株式会社 | 周期表第１３属金属窒化物半導体基板の製造方法 |
| WO2014129544A1 (ja) * | 2013-02-22 | 2014-08-28 | 三菱化学株式会社 | 周期表第１３族金属窒化物結晶およびその製造方法 |
| WO2015107813A1 (ja) * | 2014-01-17 | 2015-07-23 | 三菱化学株式会社 | ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法 |
| JP2015178438A (ja) * | 2014-02-28 | 2015-10-08 | 三菱化学株式会社 | 窒化ガリウム自立基板、窒化ガリウム結晶及び窒化ガリウム自立基板の生産方法 |
| KR102426231B1 (ko) * | 2016-08-08 | 2022-07-29 | 미쯔비시 케미컬 주식회사 | 도전성 C면 GaN 기판 |
-
2022
- 2022-08-23 EP EP22861365.9A patent/EP4394094A4/en active Pending
- 2022-08-23 KR KR1020247009295A patent/KR20240051191A/ko active Pending
- 2022-08-23 JP JP2023543934A patent/JPWO2023027077A1/ja active Pending
- 2022-08-23 CN CN202280057716.8A patent/CN117897521A/zh active Pending
- 2022-08-23 WO PCT/JP2022/031744 patent/WO2023027077A1/ja not_active Ceased
- 2022-08-23 TW TW111131668A patent/TW202314971A/zh unknown
-
2024
- 2024-02-23 US US18/585,407 patent/US20240191395A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW202314971A (zh) | 2023-04-01 |
| EP4394094A4 (en) | 2025-08-20 |
| CN117897521A (zh) | 2024-04-16 |
| US20240191395A1 (en) | 2024-06-13 |
| EP4394094A1 (en) | 2024-07-03 |
| KR20240051191A (ko) | 2024-04-19 |
| WO2023027077A1 (ja) | 2023-03-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20240213 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250807 |