CN117794883B - 高导热性氮化硅烧结体、氮化硅基板、氮化硅电路基板及半导体装置 - Google Patents

高导热性氮化硅烧结体、氮化硅基板、氮化硅电路基板及半导体装置

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Publication number
CN117794883B
CN117794883B CN202280053227.5A CN202280053227A CN117794883B CN 117794883 B CN117794883 B CN 117794883B CN 202280053227 A CN202280053227 A CN 202280053227A CN 117794883 B CN117794883 B CN 117794883B
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silicon nitride
thermal conductivity
sintered body
high thermal
crystal grains
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CN202280053227.5A
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Chinese (zh)
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CN117794883A (zh
Inventor
青木克之
五户康广
岩井健太郎
深泽孝幸
山形荣人
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Special Ceramic Materials Co ltd
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Toshiba Corp
Toshiba Materials Co Ltd
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